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    • 2. 发明授权
    • Stressed liquid crystals materials for light modulation
    • 强调液晶材料进行光调制
    • US07595850B2
    • 2009-09-29
    • US11299993
    • 2005-12-12
    • John L. WestAnatoliy GlushchenkoGuoqiang Zhang
    • John L. WestAnatoliy GlushchenkoGuoqiang Zhang
    • G02F1/1333
    • G02F1/1334C09K19/542G02F2203/50Y10T29/49117
    • A new light modulating material using interconnected unidirectionally oriented microdomains of a liquid crystal, dispersed in a stressed polymer structure, is provided. The light modulating material is prepared by dissolving the liquid crystal in an uncured monomer and then curing the monomer so that the polymer forms a well-developed interpenetrating structure of polymer chains or sheets that is uniformly dispersed through the film. When the film is subjected to stress deformation the liquid crystal undergoes a change in its unidirectional orientation. The concentration of the polymer is high enough to hold the shear stress, but is as low as possible to provide the highest switch of the phase retardation when an electric field is applied. The new materials are optically transparent and provide phase modulation of the incident light opposed to the low driving voltage, linear electro-optical response, and absence of hysteresis. It has been shown that these new materials may be successfully used in display applications, optical modulator, and beam steering devices.
    • 提供了使用分散在应力聚合物结构中的液晶的相互连接的单向定向微区域的新的光调制材料。 光调制材料通过将液晶溶解在未固化的单体中然后固化单体来制备,使得聚合物形成均匀地分散在膜中的聚合物链或片材的良好发展的互穿结构。 当膜受到应力变形时,液晶经历其单向取向的变化。 聚合物的浓度足够高以保持剪切应力,但是当施加电场时,尽可能低地提供相位延迟的最高开关。 新材料是光学透明的,并且提供与低驱动电压相对的入射光的相位调制,线性电光响应和不存在滞后。 已经表明这些新材料可以成功地用于显示应用,光学调制器和光束转向装置中。
    • 3. 发明授权
    • Stressed liquid crystals materials for light modulation
    • 强调液晶材料进行光调制
    • US08054413B2
    • 2011-11-08
    • US12559872
    • 2009-09-15
    • John L. WestAnatoliy GlushchenkoGuoqiang Zhang
    • John L. WestAnatoliy GlushchenkoGuoqiang Zhang
    • G02F1/1333G02F1/13
    • G02F1/1334C09K19/542G02F2203/50Y10T29/49117
    • A new light modulating material using interconnected unidirectionally oriented microdomains of a liquid crystal, dispersed in a stressed polymer structure, is provided. The light modulating material is prepared by dissolving the liquid crystal in an uncured monomer and then curing the monomer so that the polymer forms a well-developed interpenetrating structure of polymer chains or sheets that is uniformly dispersed through the film. When the film is subjected to stress deformation the liquid crystal undergoes a change in its unidirectional orientation. The concentration of the polymer is high enough to hold the shear stress, but is as low as possible to provide the highest switch of the phase retardation when an electric field is applied. The new materials are optically transparent and provide phase modulation of the incident light opposed to the low driving voltage, linear electro-optical response, and absence of hysteresis. It has been shown that these new materials may be successfully used in display applications, optical modulator, and beam steering devices.
    • 提供了使用分散在应力聚合物结构中的液晶的相互连接的单向定向微区域的新的光调制材料。 光调制材料通过将液晶溶解在未固化的单体中然后固化单体来制备,使得聚合物形成均匀地分散在膜中的聚合物链或片材的良好发展的互穿结构。 当膜受到应力变形时,液晶经历其单向取向的变化。 聚合物的浓度足够高以保持剪切应力,但是当施加电场时,尽可能低地提供相位延迟的最高开关。 新材料是光学透明的,并且提供与低驱动电压相对的入射光的相位调制,线性电光响应和不存在滞后。 已经表明这些新材料可以成功地用于显示应用,光学调制器和光束转向装置中。
    • 4. 发明授权
    • Method of manufacturing silicon-on-insulator wafers
    • 绝缘体上硅晶片的制造方法
    • US08853054B2
    • 2014-10-07
    • US13413284
    • 2012-03-06
    • Guoqiang ZhangJeffrey L. Libbert
    • Guoqiang ZhangJeffrey L. Libbert
    • H01L21/46H01L21/30
    • H01L21/2007
    • A method is provided for preparing multilayer semiconductor structures, such as silicon-on-insulator wafers, having reduced warp and bow. Reduced warp multilayer semiconductor structures are prepared by forming a dielectric structure on the exterior surfaces of a bonded pair of a semiconductor device substrate and a semiconductor handle substrate having an intervening dielectric layer therein. Forming a dielectric layer on the exterior surfaces of the bonded pair offsets stresses that may occur within the bulk of the semiconductor handle substrate due to thermal mismatch between the semiconductor material and the intervening dielectric layer as the structure cools from process temperatures to room temperatures.
    • 提供了一种制备多层半导体结构的方法,例如绝缘体上硅晶片,具有减少的经线和弓形。 通过在半导体器件基板的接合对的外表面和其中具有中间介电层的半导体处理基板上形成介电结构来制备经折叠的多层半导体结构。 在结合对的外表面上形成电介质层,由于半导体材料和中间介电层之间的热失配,当结构从工艺温度冷却到室温时,偏移应力可能发生在半导体处理衬底本体内。
    • 9. 发明授权
    • Semiconductor wafer polishing apparatus and method of polishing
    • 半导体晶片抛光装置及抛光方法
    • US08192248B2
    • 2012-06-05
    • US12130190
    • 2008-05-30
    • Peter D. AlbrechtGuoqiang Zhang
    • Peter D. AlbrechtGuoqiang Zhang
    • B24B1/00
    • B24B37/30
    • A wafer polishing apparatus has a base and a turntable having a polishing pad thereon and mounted on the base for rotation of the turntable and polishing pad relative to the base about an axis perpendicular to the turntable and polishing pad. The polishing pad includes a work surface engageable with a front surface of a wafer for polishing the front surface of the wafer. A drive mechanism is mounted on the base for imparting rotational motion about an axis substantially parallel to the axis of the turntable. A polishing head is connected to the drive mechanism for driving rotation of the polishing head. The polishing head has a pressure plate adapted to hold the wafer for engaging the front surface of the wafer with the work surface of the polishing pad. The pressure plate has a generally planar position and is selectively movable from the planar position to a convex position and to a concave position.
    • 晶片抛光装置具有基座和转盘,其上具有抛光垫,并且安装在基座上,用于使旋转台和抛光垫相对于垂直于转盘和抛光垫的轴线相对于基座旋转。 抛光垫包括可与晶片的前表面接合的工作表面,用于抛光晶片的前表面。 驱动机构安装在基座上,用于绕基本上平行于转台的轴线的轴线进行旋转运动。 抛光头连接到用于驱动抛光头旋转的驱动机构。 抛光头具有适于保持晶片的压板,用于与晶片的前表面接合抛光垫的工作表面。 压板具有大致平面的位置,并且可以从平面位置选择性地移动到凸形位置和凹入位置。