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1. 发明授权

US06693345B2 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 有权
公开(公告)号：US06693345B2
公开(公告)日：2004-02-17
申请号：US09995372
申请日：2001-11-26
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2358
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

2. 发明授权

US07057263B2 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 失效
公开(公告)号：US07057263B2
公开(公告)日：2006-06-06
申请号：US10734419
申请日：2003-12-11
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

3. 发明授权

US06323139B1 Semiconductor processing methods of forming photoresist over silicon nitride materials 失效
标题翻译：在氮化硅材料上形成光致抗蚀剂的半导体加工方法
公开(公告)号：US06323139B1
公开(公告)日：2001-11-27
申请号：US09457093
申请日：1999-12-07
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2131
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.
摘要翻译：一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上形成光致抗蚀剂。另一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; c）在阻挡层上形成光致抗蚀剂; d）将所述光致抗蚀剂暴露于图案化的光束以使所述光致抗蚀剂的至少一部分在溶剂中比其它部分更易溶，所述阻挡层是吸收通过所述光致抗蚀剂的光的抗反射表面; 以及e）将所述光致抗蚀剂暴露于所述溶剂以除去所述至少一个部分，同时将所述另一部分留在所述阻挡层上。在另一方面，本发明包括半导体晶片组件，包括：a）氮化硅材料，该材料具有表面; b）在所述材料的表面上的阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上并抵靠所述阻挡层的光致抗蚀剂。

4. 发明授权

US06417559B1 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 有权
公开(公告)号：US06417559B1
公开(公告)日：2002-07-09
申请号：US09724749
申请日：2000-11-27
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2358
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

5. 发明授权

US06451504B2 Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride 失效
标题翻译：促进光致抗蚀剂附着于外基层的半导体加工方法主要包括氮化硅
公开(公告)号：US06451504B2
公开(公告)日：2002-09-17
申请号：US09773462
申请日：2001-01-31
申请人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： G03F700
CPC分类号： H01L21/312 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3185 , Y10S438/948
摘要： A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; ii) transforming the outer Si3N4 surface into a material effective to promote adhesion of photoresist to the Si3N4 layer; and iii) depositing a layer of photoresist over the transformed outer Si3N4 surface, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the outer Si3N4 surface were not transformed.
摘要翻译：促进光致抗蚀剂对主要包含氮化硅的外基材层的粘附的半导体加工方法包括：a）提供基材; b）在衬底外部提供Si 3 N 4外层，外部Si 3 N 4层具有外表面; c）用分立的光致抗蚀剂粘合层覆盖外部Si 3 N 4表面; 以及d）在其外部具有中间离散粘合层的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比不存在中间离散粘合层的情况下更大程度地粘附于Si 3 N 4层。此外，根据本发明的方法包括：i）在衬底外部提供Si 3 N 4的外层，外部Si 3 N 4层具有外表面; ii）将外部Si 3 N 4表面转化为有效促进光致抗蚀剂粘附到Si 3 N 4层的材料; 以及iii）在转化的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比未转变外部Si 3 N 4表面的情况下更大程度地粘附到Si 3 N 4层。

6. 发明授权

US06297171B1 Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride 失效
标题翻译：促进光致抗蚀剂附着于外基层的半导体加工方法主要包括氮化硅
公开(公告)号：US06297171B1
公开(公告)日：2001-10-02
申请号：US09295642
申请日：1999-04-20
申请人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2131
CPC分类号： H01L21/312 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3185 , Y10S438/948
摘要： A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; ii) transforming the outer Si3N4 surface into a material effective to promote adhesion of photoresist to the Si3N4 layer; and iii) depositing a layer of photoresist over the transformed outer Si3N4 surface, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the outer Si3N4 surface were not transformed.
摘要翻译：促进光致抗蚀剂对主要包含氮化硅的外基材层的粘附的半导体加工方法包括：a）提供基材; b）在衬底外部提供Si 3 N 4外层，外部Si 3 N 4层具有外表面; c）用分立的光致抗蚀剂粘合层覆盖外部Si 3 N 4表面; 以及d）在其外部具有中间离散粘合层的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比不存在中间离散粘合层的情况下更大程度地粘附于Si 3 N 4层。此外，根据本发明的方法包括：i）在衬底外部提供Si 3 N 4的外层，外部Si 3 N 4层具有外表面; ii）将外部Si 3 N 4表面转化为有效促进光致抗蚀剂粘附到Si 3 N 4层的材料; 以及iii）在转化的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比未转变外部Si 3 N 4表面的情况下更大程度地粘附到Si 3 N 4层。

7. 发明授权

US5926739A Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride 失效
公开(公告)号：US5926739A
公开(公告)日：1999-07-20
申请号：US567090
申请日：1995-12-04
申请人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L21/312 , H01L21/314 , H01L21/318
CPC分类号： H01L21/312 , H01L21/3185 , Y10S438/948
摘要： A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; c) covering the outer Si.sub.3 N.sub.4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si.sub.3 N.sub.4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; ii) transforming the outer Si.sub.3 N.sub.4 surface into a material effective to promote adhesion of photoresist to the Si.sub.3 N.sub.4 layer; and iii) depositing a layer of photoresist over the transformed outer Si.sub.3 N.sub.4 surface, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the outer Si.sub.3 N.sub.4 surface were not transformed.

8. 发明授权

US6072226A Field isolation structure formed using ozone oxidation and tapering 失效
标题翻译：采用臭氧氧化和锥形形成现场隔离结构
公开(公告)号：US6072226A
公开(公告)日：2000-06-06
申请号：US844169
申请日：1997-04-18
申请人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
发明人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/762 , H01L29/00
CPC分类号： H01L21/31053 , H01L21/02238 , H01L21/02255 , H01L21/31658 , H01L21/76216 , Y10S438/978
摘要： A method for forming a field isolation structure and an improved field isolation structure are provided. The method includes forming a field oxide on a silicon substrate using an ozone enhanced local oxidation of silicon (LOCOS) process. Following formation of the field oxide a surface topography of the field oxide is sloped or tapered by ion milling, dry etching, reactive ion etching or chemical mechanical planarization. With an ozone enhanced LOCOS process, oxidation rates are increased and stress between the field oxide and substrate are reduced. This permits the formation of field isolation structures with reduced lateral encroachment and a smaller bird's beak area. In addition, the sloped topography of the field oxide permits a subsequently deposited conductive layer (e.g., polysilicon) to be etched without the formation of conductive stringers. During the etch process the active areas on the substrate can be protected with a sacrificial oxide or by only partially removing the LOCOS mask.
摘要翻译：提供了一种用于形成场隔离结构和改进的场隔离结构的方法。该方法包括使用臭氧增强的局部氧化硅（LOCOS）工艺在硅衬底上形成场氧化物。在形成场氧化物之后，场氧化物的表面形貌通过离子研磨，干蚀刻，反应离子蚀刻或化学机械平面化而倾斜或渐缩。通过臭氧增强的LOCOS工艺，氧化速率增加，场氧化物和衬底之间的应力降低。这允许形成具有减小的横向侵入和较小鸟喙面积的场隔离结构。此外，场氧化物的倾斜形貌允许随后沉积的导电层（例如，多晶硅）被蚀刻而不形成导电桁条。在蚀刻过程中，可以用牺牲氧化物或仅部分去除LOCOS掩模来保护衬底上的有源区域。

9. 发明授权

US5672539A Method for forming an improved field isolation structure using ozone enhanced oxidation and tapering 失效
标题翻译：使用臭氧增强氧化和渐缩形成改进的场隔离结构的方法
公开(公告)号：US5672539A
公开(公告)日：1997-09-30
申请号：US538732
申请日：1995-10-03
申请人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
发明人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/762 , H01L21/76
CPC分类号： H01L21/31053 , H01L21/02238 , H01L21/02255 , H01L21/31658 , H01L21/76216 , Y10S438/978
摘要： A method for forming a field isolation structure and an improved field isolation structure are provided. The method includes forming a field oxide on a silicon substrate using an ozone enhanced local oxidation of silicon (LOCOS) process. Following formation of the field oxide a surface topography of the field oxide is sloped or tapered by ion milling, dry etching, reactive ion etching or chemical mechanical planarization. With an ozone enhanced LOCOS process, oxidation rates are increased and stress between the field oxide and substrate are reduced. This permits the formation of field isolation structures with reduced lateral encroachment and a smaller bird's beak area. In addition, the sloped topography of the field oxide permits a subsequently deposited conductive layer (e.g., polysilicon) to be etched without the formation of conductive stringers. During the etch process the active areas on the substrate can be protected with a sacrificial oxide or by only partially removing the LOCOS mask.
摘要翻译：提供了一种用于形成场隔离结构和改进的场隔离结构的方法。该方法包括使用臭氧增强的局部氧化硅（LOCOS）工艺在硅衬底上形成场氧化物。在形成场氧化物之后，场氧化物的表面形貌通过离子研磨，干蚀刻，反应离子蚀刻或化学机械平面化而倾斜或渐缩。通过臭氧增强的LOCOS工艺，氧化速率增加，场氧化物和衬底之间的应力降低。这允许形成具有减小的横向侵入和较小鸟喙面积的场隔离结构。此外，场氧化物的倾斜形貌允许随后沉积的导电层（例如，多晶硅）被蚀刻而不形成导电桁条。在蚀刻过程中，可以用牺牲氧化物或仅部分去除LOCOS掩模来保护衬底上的有源区域。

10. 发明授权

US07838183B2 Multi-layer, attenuated phase-shifting mask 失效
标题翻译：多层衰减相移掩模
公开(公告)号：US07838183B2
公开(公告)日：2010-11-23
申请号：US12581455
申请日：2009-10-19
申请人： J. Brett Rolfson
发明人： J. Brett Rolfson
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/29
摘要： The present invention provides an attenuated phase shift mask (“APSM”) that, in each embodiment, includes completely transmissive regions sized and shaped to define desired semiconductor device features, slightly attenuated regions at the edges of the completely transmissive regions corresponding to isolated device features, highly attenuated regions at the edges of completely transmissive regions corresponding to closely spaced or nested device features, and completely opaque areas where it is desirable to block transmission of all radiation through the APSM. The present invention further provides methods for fabricating the APSMs according to the present invention.
摘要翻译：本发明提供了衰减相移掩模（“APSM”），其在每个实施例中包括尺寸和形状以确定期望的半导体器件特征的完全透射区域，在完全透射区域的边缘处对应于隔离的器件特征的略微衰减的区域在完全透射区域的边缘处的高度衰减的区域对应于紧密间隔或嵌套的器件特征，以及完全不透明的区域，其中期望阻止通过APSM的所有辐射的透射。本发明还提供了制造根据本发明的APSM的方法。

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