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1. 发明授权

US06693345B2 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 有权
公开(公告)号：US06693345B2
公开(公告)日：2004-02-17
申请号：US09995372
申请日：2001-11-26
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2358
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

2. 发明授权

US07057263B2 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 失效
公开(公告)号：US07057263B2
公开(公告)日：2006-06-06
申请号：US10734419
申请日：2003-12-11
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L23/58
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

3. 发明授权

US06323139B1 Semiconductor processing methods of forming photoresist over silicon nitride materials 失效
标题翻译：在氮化硅材料上形成光致抗蚀剂的半导体加工方法
公开(公告)号：US06323139B1
公开(公告)日：2001-11-27
申请号：US09457093
申请日：1999-12-07
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2131
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.
摘要翻译：一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上形成光致抗蚀剂。另一方面，本发明包括半导体处理方法，包括：a）提供具有表面的氮化硅材料; b）在所述材料的表面上形成阻挡层，所述阻挡层包含硅和氮; c）在阻挡层上形成光致抗蚀剂; d）将所述光致抗蚀剂暴露于图案化的光束以使所述光致抗蚀剂的至少一部分在溶剂中比其它部分更易溶，所述阻挡层是吸收通过所述光致抗蚀剂的光的抗反射表面; 以及e）将所述光致抗蚀剂暴露于所述溶剂以除去所述至少一个部分，同时将所述另一部分留在所述阻挡层上。在另一方面，本发明包括半导体晶片组件，包括：a）氮化硅材料，该材料具有表面; b）在所述材料的表面上的阻挡层，所述阻挡层包含硅和氮; 以及c）在所述阻挡层上并抵靠所述阻挡层的光致抗蚀剂。

4. 发明授权

US06417559B1 Semiconductor wafer assemblies comprising photoresist over silicon nitride materials 有权
公开(公告)号：US06417559B1
公开(公告)日：2002-07-09
申请号：US09724749
申请日：2000-11-27
申请人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： John T. Moore , Scott Jeffrey DeBoer , Mark Fischer , J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2358
CPC分类号： H01L21/0217 , G03F7/091 , H01L21/022 , H01L21/02271 , H01L21/02304 , H01L21/02362 , H01L21/0274 , H01L21/0332 , H01L21/31144 , H01L21/312 , H01L21/3185
摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

5. 发明授权

US06451504B2 Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride 失效
标题翻译：促进光致抗蚀剂附着于外基层的半导体加工方法主要包括氮化硅
公开(公告)号：US06451504B2
公开(公告)日：2002-09-17
申请号：US09773462
申请日：2001-01-31
申请人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： G03F700
CPC分类号： H01L21/312 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3185 , Y10S438/948
摘要： A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; ii) transforming the outer Si3N4 surface into a material effective to promote adhesion of photoresist to the Si3N4 layer; and iii) depositing a layer of photoresist over the transformed outer Si3N4 surface, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the outer Si3N4 surface were not transformed.
摘要翻译：促进光致抗蚀剂对主要包含氮化硅的外基材层的粘附的半导体加工方法包括：a）提供基材; b）在衬底外部提供Si 3 N 4外层，外部Si 3 N 4层具有外表面; c）用分立的光致抗蚀剂粘合层覆盖外部Si 3 N 4表面; 以及d）在其外部具有中间离散粘合层的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比不存在中间离散粘合层的情况下更大程度地粘附于Si 3 N 4层。此外，根据本发明的方法包括：i）在衬底外部提供Si 3 N 4的外层，外部Si 3 N 4层具有外表面; ii）将外部Si 3 N 4表面转化为有效促进光致抗蚀剂粘附到Si 3 N 4层的材料; 以及iii）在转化的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比未转变外部Si 3 N 4表面的情况下更大程度地粘附到Si 3 N 4层。

6. 发明授权

US06297171B1 Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride 失效
标题翻译：促进光致抗蚀剂附着于外基层的半导体加工方法主要包括氮化硅
公开(公告)号：US06297171B1
公开(公告)日：2001-10-02
申请号：US09295642
申请日：1999-04-20
申请人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L2131
CPC分类号： H01L21/312 , H01L21/0217 , H01L21/02211 , H01L21/02271 , H01L21/02304 , H01L21/3185 , Y10S438/948
摘要： A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; c) covering the outer Si3N4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si3N4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si3N4 outwardly of the substrate, the outer Si3N4 layer having an outer surface; ii) transforming the outer Si3N4 surface into a material effective to promote adhesion of photoresist to the Si3N4 layer; and iii) depositing a layer of photoresist over the transformed outer Si3N4 surface, the photoresist adhering to the Si3N4 layer with a greater degree of adhesion than would otherwise occur if the outer Si3N4 surface were not transformed.
摘要翻译：促进光致抗蚀剂对主要包含氮化硅的外基材层的粘附的半导体加工方法包括：a）提供基材; b）在衬底外部提供Si 3 N 4外层，外部Si 3 N 4层具有外表面; c）用分立的光致抗蚀剂粘合层覆盖外部Si 3 N 4表面; 以及d）在其外部具有中间离散粘合层的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比不存在中间离散粘合层的情况下更大程度地粘附于Si 3 N 4层。此外，根据本发明的方法包括：i）在衬底外部提供Si 3 N 4的外层，外部Si 3 N 4层具有外表面; ii）将外部Si 3 N 4表面转化为有效促进光致抗蚀剂粘附到Si 3 N 4层的材料; 以及iii）在转化的外部Si 3 N 4表面上沉积光致抗蚀剂层，光致抗蚀剂以比未转变外部Si 3 N 4表面的情况下更大程度地粘附到Si 3 N 4层。

7. 发明授权

US5926739A Semiconductor processing method of promoting photoresist adhesion to an outer substrate layer predominately comprising silicon nitride 失效
公开(公告)号：US5926739A
公开(公告)日：1999-07-20
申请号：US567090
申请日：1995-12-04
申请人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
发明人： J. Brett Rolfson , Annette L. Martin , Ardavan Niroomand
IPC分类号： H01L21/312 , H01L21/314 , H01L21/318
CPC分类号： H01L21/312 , H01L21/3185 , Y10S438/948
摘要： A semiconductor processing method of promoting adhesion of photoresist to an outer substrate layer predominately comprising silicon nitride includes, a) providing a substrate; b) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; c) covering the outer Si.sub.3 N.sub.4 surface with a discrete photoresist adhesion layer; and d) depositing a layer of photoresist over the outer Si.sub.3 N.sub.4 surface having the intermediate discrete adhesion layer thereover, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the intermediate discrete adhesion layer were not present. Further, a method in accordance with the invention includes, i) providing an outer layer of Si.sub.3 N.sub.4 outwardly of the substrate, the outer Si.sub.3 N.sub.4 layer having an outer surface; ii) transforming the outer Si.sub.3 N.sub.4 surface into a material effective to promote adhesion of photoresist to the Si.sub.3 N.sub.4 layer; and iii) depositing a layer of photoresist over the transformed outer Si.sub.3 N.sub.4 surface, the photoresist adhering to the Si.sub.3 N.sub.4 layer with a greater degree of adhesion than would otherwise occur if the outer Si.sub.3 N.sub.4 surface were not transformed.

8. 发明授权

US5364187A System for repeatable temperature measurement using surface reflectivity 失效
标题翻译：使用表面反射率进行可重复温度测量的系统
公开(公告)号：US5364187A
公开(公告)日：1994-11-15
申请号：US28040
申请日：1993-03-08
申请人： Randhir P. S. Thakur , Gurtej S. Sandhu , Annette L. Martin
发明人： Randhir P. S. Thakur , Gurtej S. Sandhu , Annette L. Martin
IPC分类号： G01K11/00
CPC分类号： G01K11/00
摘要： A system is disclosed for externally measuring the temperature of a substrate having a reflective surface within a chamber. The system comprises a first light source having sufficient intensity for bombarding the reflective surface with photons, thereby heating the surface. The first light source has an output level and a wavelength substantially in the absorption band of silicon. The system also comprises means for exposing the substrate to a gas in order to form a layer superjacent the reflective surface. A sensor, preferably a photo detector, for sensing changes in the reflectivity of the surface is included. In one embodiment of the present invention, the sensor comprises a second light source and a sensor, for sensing the reflectivity of the surface caused by the reflecting photons. Furthermore, the system comprises control circuitry for controlling the first light source in response to the sensor; the control circuitry being coupled to the sensor by a feedback loop.
摘要翻译：公开了用于外部测量在室内具有反射表面的基板的温度的系统。该系统包括具有足够强度的第一光源，用于用光子轰击反射表面，从而加热表面。第一光源具有基本上在硅的吸收带中的输出电平和波长。该系统还包括用于将衬底暴露于气体以便形成超过反射表面的层的装置。包括用于感测表面的反射率变化的传感器，优选光电检测器。在本发明的一个实施例中，传感器包括第二光源和传感器，用于感测由反射光子引起的表面的反射率。此外，该系统包括用于响应于传感器控制第一光源的控制电路; 控制电路通过反馈回路耦合到传感器。

9. 再颁专利

USRE36050E Method for repeatable temperature measurement using surface reflectivity 失效
标题翻译：使用表面反射率进行可重复温度测量的方法
公开(公告)号：USRE36050E
公开(公告)日：1999-01-19
申请号：US722360
申请日：1996-09-27
申请人： Randhir P. S. Thakur , Gurtej S. Sandhu , Annette L. Martin
发明人： Randhir P. S. Thakur , Gurtej S. Sandhu , Annette L. Martin
IPC分类号： G01J5/00 , G01J5/04 , G01K11/14 , G01J5/54
CPC分类号： G01J5/0003 , G01J5/0007 , G01J5/041 , G01K11/14 , G01J2005/0059
摘要： A method is disclosed for continuously measuring the temperature of a semiconductor substrate in a chamber is disclosed. The first step of the method involves providing a substantially clean semiconductor substrate having a layer a reflective surface thereon into a chamber. A film is formed superjacent the surface by introducing a gas comprising at least one of N.sub.2, NH.sub.3, O.sub.2, N.sub.2 O, Ar, Ar--H.sub.2, H.sub.2, GeH.sub.4, or any fluorine based gas and photon energy in situ. The photon energy, having a wavelength substantially in the absorption band of silicon, generates a temperature substantially within the range of 500.degree. C. to 1250.degree. C. Subsequently, the reflectivity of the surface is measured prior to introducing the gas, and continuously, while forming the film until the film is substantially formed. The substrate is exposed to photon energy having a power level responsive to the measured reflectivities of the film.
摘要翻译：公开了一种连续测量室内半导体衬底的温度的方法。该方法的第一步包括提供基本上干净的半导体衬底，其具有在其上的反射表面的层到腔室中。通过引入包含N 2，NH 3，O 2，N 2 O，Ar，Ar-H 2，H 2，GeH 4或任何基于氟的气体中的至少一种的气体和原位的光子能量，在该表面之上形成膜。具有基本上在硅的吸收带中的波长的光子能量产生基本上在500℃至1250℃范围内的温度。随后，在引入气体之前测量表面的反射率，并且连续地，同时形成膜直到膜基本形成。将基板暴露于具有响应于所测量的膜的反射率的功率电平的光子能量。

10. 发明授权

US5416045A Method for chemical vapor depositing a titanium nitride layer on a semiconductor wafer and method of annealing tin films 失效
标题翻译：在半导体晶片上化学气相沉积氮化钛层的方法和退火锡膜的方法
公开(公告)号：US5416045A
公开(公告)日：1995-05-16
申请号：US19084
申请日：1993-02-18
申请人： Ralph E. Kauffman , Michael J. Prucha , James Beck , Randhir P. S. Thakur , Annette L. Martin
发明人： Ralph E. Kauffman , Michael J. Prucha , James Beck , Randhir P. S. Thakur , Annette L. Martin
IPC分类号： C30B33/00 , H01L21/768 , H01L21/324
CPC分类号： H01L21/76856 , C30B29/38 , C30B33/00 , H01L21/76843 , Y10S438/909
摘要： A method of chemical vapor depositing a titanium nitride layer on a semiconductor wafer within a chemical vapor deposition reactor includes: a) positioning a wafer within a chemical vapor deposition reactor; b) injecting gaseous TiCl.sub.4, NH.sub.3 and N.sub.2 to within the reactor; and c) maintaining the reactor at a selected pressure and a selected temperature which are effective for reacting the TiCl.sub.4 and NH.sub.3 to deposit a uniform film comprising titanium nitride on the wafer, the selected temperature being less than or equal to about 500.degree. C. With a TiN film outwardly exposed, a wafer is annealed by the sequential steps of, a) rapid thermal processing the wafer having the outwardly exposed TiN film to a temperature from about 580.degree. C. to about 700.degree. C.; b) exposing the wafer to NH.sub.3 gas at a temperature from about 580.degree. C. to about 700.degree. C. for at least about 5 seconds to drive chlorine from the TiN film; c) rapid thermal processing the wafer to a temperature of at least about 780.degree. C.; and d) exposing the wafer to N.sub.2 gas at a temperature of at least about 780.degree. C. for at least about 10 seconds.
摘要翻译：在化学气相沉积反应器内的半导体晶片上化学气相沉积氮化钛层的方法包括：a）将晶片定位在化学气相沉积反应器内; b）将气态TiCl4，NH3和N2注入反应器内; 和c）将反应器保持在选择的压力和选定的温度下，这对于使TiCl 4和NH 3反应在晶片上沉积包含氮化钛的均匀的膜是有效的，所选择的温度小于或等于约500℃。向外暴露的TiN膜，通过以下顺序的步骤对晶片进行退火：a）将具有向外暴露的TiN膜的晶片快速热处理至约580℃至约700℃的温度; b）在约580℃至约700℃的温度下将晶片暴露于NH 3气体至少约5秒以从TiN膜驱动氯; c）将晶片快速热处理至至少约780℃的温度; 和d）在至少约780℃的温度下将晶片暴露于N 2气体至少约10秒。

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