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1. 发明申请

WO1998014415A1 SELECTIVE PARA-XYLENE PRODUCTION BY TOLUENE METHYLATION 审中-公开
标题翻译：通过甲苯甲基选择性对二甲苯生产
公开(公告)号：WO1998014415A1
公开(公告)日：1998-04-09
申请号：PCT/US1997018079
申请日：1997-10-02
申请人： MOBIL OIL CORPORATION , BROWN, Stephen, Harold , MATHIAS, Mark, Fischer , OLSON, David, Harold , WARE, Robert, Adams
发明人： MOBIL OIL CORPORATION
IPC分类号： C07C01/20
CPC分类号： C07C1/20 , B01J29/005 , B01J29/061 , B01J29/40 , B01J29/82 , B01J2229/36 , B01J2229/40 , B01J2229/42 , C07C2/864 , C07C2527/16 , C07C2529/40 , Y02P20/52 , C07C11/02 , C07C15/08
摘要： There is provided a process for the selective production of para-xylene which comprises reacting toluene with methanol in the presence of a catalyst comprising a porous crystalline material having a Diffusion Parameter for 2,2 dimethylbutane of about 0.1-15 sec when measured at a temperature of 120 DEG C and a 2,2 dimethylbutane pressure of 60 torr (8kPa). The porous crystalline material is preferably a medium-pore zeolite, particularly ZSM-5, which has been severely steamed at a temperature of at least 950 DEG C. The porous crystalline material is preferably combined with at least one oxide modifier, preferably including phosphorus, to control reduction of the micropore volume of the material during the steaming step.
摘要翻译：提供了选择性生产对二甲苯的方法，其包括在催化剂存在下使甲苯与甲醇反应，所述催化剂包含具有约0.1-15秒-1的2,2-二甲基丁烷的扩散参数的多孔结晶材料，其为约0.1-15秒-1 在120℃的温度和60托（8kPa）的2,2二甲基丁烷压力下测量。多孔结晶材料优选是中孔沸石，特别是ZSM-5，其在至少950℃的温度下被严格蒸发。多孔结晶材料优选与至少一种氧化物改性剂，优选包括磷，以控制蒸汽步骤期间材料的微孔体积的减少。

2. 发明申请

US20160350091A1 Mechanisms For Declarative Expression Of Data Types For Data Storage 有权
标题翻译：用于数据存储的数据类型的声明式表达的机制
公开(公告)号：US20160350091A1
公开(公告)日：2016-12-01
申请号：US14722351
申请日：2015-05-27
申请人： Prakash Khot , Mark Fischer , Daniel Philip Arcari
发明人： Prakash Khot , Mark Fischer , Daniel Philip Arcari
IPC分类号： G06F9/45 , G06F9/44
CPC分类号： G06F8/51 , G06F3/06 , G06F8/315 , G06F8/35 , G06F8/36 , G06F9/44505
摘要： Computer implemented techniques for storage management include transforming file instances using a modeling language platform that includes a language grammar and a set of language processing rules to transform instances of an entity written in the language grammar into a platform independent code and artifact files and auto-generating by the modeling language platform code to recognize and process input in a given language to deconstruct file instances into pieces that allow further discrete operations to be performed on the file instances.
摘要翻译：用于存储管理的计算机实现技术包括使用包括语言语法和一组语言处理规则的建模语言平台来转换文件实例，以将以语言语法编写的实体的实例转换为独立于平台的代码和工件文件和自动生成通过建模语言平台代码来识别和处理给定语言中的输入，以将文件实例解构为允许对文件实例执行进一步离散操作的部分。

3. 发明申请

US20120328369A1 SEALING ARRANGEMENT FOR SHAFT AND TUNNEL CONSTRUCTIONS 有权
标题翻译：密封装置和隧道结构
公开(公告)号：US20120328369A1
公开(公告)日：2012-12-27
申请号：US13516329
申请日：2010-11-29
申请人： Heiko Hoeft , Holger Gutschmidt , Andreas Diener , Andreas Artus , Mark Fischer , Matthias Klug
发明人： Heiko Hoeft , Holger Gutschmidt , Andreas Diener , Andreas Artus , Mark Fischer , Matthias Klug
IPC分类号： E21D11/38 , F16J15/06
CPC分类号： E21D11/385
摘要： A sealing arrangement for shaft and tunnel constructions. The sealing of gaps between components of shaft and tunnel constructions is improved, in particular if the components are misaligned. For this purpose a) the sealing arrangement (1) comprises at least two components (2), which lie against each other at butt sides (3) so as to form a gap (4), b) the components (2) have an elastic sealing profile (5) on each butt side (3), and c) the sealing profiles (5) of the butt sides (3) that lie against each other lie against each other on a contact plane (6) and bridge the gap (4) in a sealing manner. The sealing profiles (5) have areas (7, 8) of different hardness arranged in alternation in the transverse direction (9) perpendicular to the respective profile longitudinal plane (10), the sealing profiles (5) of butt sides (3) that lie against each other differing from each other in the arrangement of the areas (7, 8) of different hardness in the transverse direction (9).
摘要翻译：轴和隧道结构的密封装置。改进了轴和组件之间的间隙的密封，特别是如果部件不对准。为此目的a）密封装置（1）包括至少两个部件（2），它们在对接面（3）处彼此相对以形成间隙（4），b）部件（2）具有每个对接侧（3）上的弹性密封型材（5），以及c）彼此相对的对接面（3）的密封型材（5）在接触平面（6）上彼此抵靠并桥接间隙（4）。密封型材（5）具有垂直于相应轮廓纵向平面（10）的横向（9）交替地布置的具有不同硬度的区域（7,8），对接侧面（3）的密封型材（5）在横向（9）上具有不同硬度的区域（7,8）的布置彼此不同。

4. 发明申请

US20120238061A1 Methods Of Forming Transistors, And Methods Of Forming Memory Arrays 有权
标题翻译：形成晶体管的方法，以及形成记忆阵列的方法
公开(公告)号：US20120238061A1
公开(公告)日：2012-09-20
申请号：US13485892
申请日：2012-05-31
申请人： Mark Fischer , Sanh D. Tang
发明人： Mark Fischer , Sanh D. Tang
IPC分类号： H01L21/336
CPC分类号： H01L27/10876 , H01L21/823425 , H01L21/823487 , H01L27/2454 , H01L29/0653 , H01L29/42368 , H01L29/456 , H01L29/66666 , H01L29/7827 , H01L45/06 , H01L45/1233
摘要： Some embodiments include methods of forming vertical transistors. A construction may have a plurality of spaced apart fins extending upwardly from a semiconductor substrate. Each of the fins may have vertical transistor pillars, and each of the vertical transistor pillars may have a bottom source/drain region location, a channel region location over the bottom source/drain region location, and a top source/drain region location over the channel region location. Electrically conductive gate material may be formed along the fins while using oxide within spaces along the bottoms of the fins to offset the electrically conductive gate material to be above the bottom source/drain region locations of the vertical transistor pillars. The oxide may be an oxide which etches at a rate of at least about 100 Å/minute with dilute HF at room temperature. In some embodiments the oxide may be removed after the electrically conductive gate material is formed.
摘要翻译：一些实施例包括形成垂直晶体管的方法。结构可以具有从半导体衬底向上延伸的多个间隔开的翅片。每个鳍片可以具有垂直的晶体管柱，并且每个垂直晶体管柱可以具有底部源极/漏极区域位置，在底部源极/漏极区域位置上方的沟道区域位置，以及顶部源极/漏极区域渠道区域位置。导电栅极材料可以沿着鳍片形成，同时沿着鳍状物的底部在空间内使用氧化物以将导电栅极材料偏移到垂直晶体管柱的底部源极/漏极区域的上方。氧化物可以是在室温下用稀释HF以至少约100埃/分钟的速率蚀刻的氧化物。在一些实施例中，可以在形成导电栅极材料之后去除氧化物。

5. 发明授权

US08154081B2 Processes and apparatus having a semiconductor fin 有权
标题翻译：具有半导体散热片的方法和装置
公开(公告)号：US08154081B2
公开(公告)日：2012-04-10
申请号：US13017854
申请日：2011-01-31
申请人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
发明人： Mark Fischer , T. Earl Allen , H. Montgomery Manning
IPC分类号： H01L27/12
CPC分类号： H01L29/785 , H01L29/66818 , H01L29/7853 , Y10S438/947
摘要： A process may include first etching a trench isolation dielectric through a dielectric hard mask that abuts the sidewall of a fin semiconductor. The first etch can be carried out to expose at least a portion of the sidewall, causing the dielectric hard mask to recede to a greater degree in the lateral direction than the vertical direction. The process may include second etching the fin semiconductor to achieve a thinned semiconductor fin, which has receded beneath the shadow of the laterally receded hard mask. The thinned semiconductor fin may have a characteristic dimension that can exceed photolithography limits. Electronic devices may include the thinned semiconductor fin as part of a field effect transistor.
摘要翻译：工艺可以包括首先通过与散热片半导体的侧壁邻接的电介质硬掩模蚀刻沟槽隔离电介质。可以执行第一蚀刻以暴露侧壁的至少一部分，使得电介质硬掩模在横向方向上比垂直方向更大程度地退回。该方法可以包括第二蚀刻鳍式半导体以实现减薄的半导体鳍片，其已经在横向后退的硬掩模的阴影之下退化。减薄的半导体鳍片可以具有可超过光刻极限的特征尺寸。电子器件可以包括作为场效应晶体管的一部分的变薄的半导体鳍片。

6. 发明申请

US20120061740A1 SUBRESOLUTION SILICON FEATURES AND METHODS FOR FORMING THE SAME 有权
标题翻译： SUBRASOLUTION SILICON特征及其形成方法
公开(公告)号：US20120061740A1
公开(公告)日：2012-03-15
申请号：US13302090
申请日：2011-11-22
申请人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
发明人： Kevin J. Torek , Mark Fischer , Robert J. Hanson
IPC分类号： H01L27/06 , H01L29/78
CPC分类号： H01L29/7851 , H01L27/10808 , H01L27/10826 , H01L27/10879 , H01L29/66795 , H01L29/7853 , H01L29/7854
摘要： Novel etch techniques are provided for shaping silicon features below the photolithographic resolution limits. FinFET devices are defined by recessing oxide and exposing a silicon protrusion to an isotropic etch, at least in the channel region. In one implementation, the protrusion is contoured by a dry isotropic etch having excellent selectivity, using a downstream microwave plasma etch.
摘要翻译：提供了新颖的蚀刻技术，用于在低于光刻分辨率极限的条件下成形硅特征。 FinFET器件通过凹陷氧化物和至少在沟道区域中将硅突起暴露于各向同性蚀刻来限定。在一个实施方案中，使用下游微波等离子体蚀刻，通过具有优异选择性的干各向同性蚀刻来形成突起。

7. 发明申请

US20120052640A1 Methods Of Forming Pluralities Of Vertical Transistors, And Methods Of Forming Memory Arrays 有权
标题翻译：形成多个垂直晶体管的方法，以及形成记忆阵列的方法
公开(公告)号：US20120052640A1
公开(公告)日：2012-03-01
申请号：US12872705
申请日：2010-08-31
申请人： Mark Fischer , Sanh D. Tang
发明人： Mark Fischer , Sanh D. Tang
IPC分类号： H01L21/336
CPC分类号： H01L27/10876 , H01L21/823425 , H01L21/823487 , H01L27/2454 , H01L29/0653 , H01L29/42368 , H01L29/456 , H01L29/66666 , H01L29/7827 , H01L45/06 , H01L45/1233
摘要： Some embodiments include methods of forming vertical transistors. A construction may have a plurality of spaced apart fins extending upwardly from a semiconductor substrate. Each of the fins may have vertical transistor pillars, and each of the vertical transistor pillars may have a bottom source/drain region location, a channel region location over the bottom source/drain region location, and a top source/drain region location over the channel region location. Electrically conductive gate material may be formed along the fins while using oxide within spaces along the bottoms of the fins to offset the electrically conductive gate material to be above the bottom source/drain region locations of the vertical transistor pillars. The oxide may be an oxide which etches at a rate of at least about 100 Å/minute with dilute HF at room temperature. In some embodiments the oxide may be removed after the electrically conductive gate material is formed.
摘要翻译：一些实施例包括形成垂直晶体管的方法。结构可以具有从半导体衬底向上延伸的多个间隔开的翅片。每个鳍片可以具有垂直的晶体管柱，并且每个垂直晶体管柱可以具有底部源极/漏极区域位置，在底部源极/漏极区域位置上方的沟道区域位置，以及顶部源极/漏极区域渠道区域位置。导电栅极材料可以沿着鳍片形成，同时沿着鳍状物的底部在空间内使用氧化物以将导电栅极材料偏移到垂直晶体管柱的底部源极/漏极区域的上方。氧化物可以是在室温下用稀释HF以至少约100埃/分钟的速率蚀刻的氧化物。在一些实施例中，可以在形成导电栅极材料之后去除氧化物。

8. 发明申请

US20120040356A1 Methods for Detecting Oncofetal Fibronectin 有权
标题翻译：检测骨髓纤维连接蛋白的方法
公开(公告)号：US20120040356A1
公开(公告)日：2012-02-16
申请号：US13081826
申请日：2011-04-07
申请人： Robert O. Hussa , Mark Fischer-Colbrie , Jerome P. Lapointe , Simon Shorter , Andrew Senyei
发明人： Robert O. Hussa , Mark Fischer-Colbrie , Jerome P. Lapointe , Simon Shorter , Andrew Senyei
IPC分类号： C12Q1/68 , G01N33/566 , G01N33/577
CPC分类号： G01N33/689 , B01L3/5023 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C07K16/18 , C07K16/30 , C12Q1/6834 , C12Q1/6883 , C12Q1/6886 , C12Q2600/106 , C12Q2600/112 , G01N33/564 , G01N33/57476 , G01N33/6887 , G01N2333/471 , G01N2333/78 , G01N2500/00 , G01N2800/36 , G01N2800/368
摘要： Methods and products for the detection of oncofetal fibronectin indicating molecules in samples are provided. Methods for imaging of oncofetal fibronectin are provided. In some methods provided herein, the sample is treated with a reagent and/or contacted with a non-specific binder. Provided are methods for testing subjects to ascertain health and disease status and to assess the risk of developing a disease or condition. Methods for detecting the presence of oncofetal fibronectin indicating molecules by a variety of methods such as immunoassays and mass spectrometry also are provided. Methods and products for detection of oncofetal fibronection for selection of concepti are provided.
摘要翻译：提供了检测样品中表达分子的支原体纤连蛋白的方法和产品。提供了成骨纤维连接蛋白成像方法。在本文提供的一些方法中，用试剂处理样品和/或与非特异性粘合剂接触。提供了测试受试者以确定健康和疾病状态并评估发展疾病或病症的风险的方法。还提供了通过各种方法如免疫测定和质谱法检测指示分子的成纤维细胞蛋白的存在的方法。提供了用于检测骨髓纤维连接以选择概念的方法和产品。

9. 发明申请

US20110225119A1 SYSTEM, METHOD AND COMPUTER PROGRAM PRODUCT FOR VERSIONING CONTENT IN A DATABASE SYSTEM USING CONTENT TYPE SPECIFIC OBJECTS 有权
标题翻译：使用内容类型特定对象的数据库系统中的版本内容的系统，方法和计算机程序产品
公开(公告)号：US20110225119A1
公开(公告)日：2011-09-15
申请号：US13047697
申请日：2011-03-14
申请人： Simon Wong , Walter Macklem , Mark Fischer , Orjan Kjellberg , Olivier Pin , Sonali Agrawal , Ron Pragides , Etienne Giraudy
发明人： Simon Wong , Walter Macklem , Mark Fischer , Orjan Kjellberg , Olivier Pin , Sonali Agrawal , Ron Pragides , Etienne Giraudy
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F17/30309 , G06F17/30607
摘要： In accordance with embodiments, there are provided mechanisms and methods for versioning content in a database system using content type specific objects. These mechanisms and methods for versioning content in a database system using content type specific objects can enable embodiments to provide a database system which stores information associated with multiple versions of content. The ability of embodiments to provide a database system which supports content versioning can enable an efficient and comprehensive storage of content types having different features by the database system.
摘要翻译：根据实施例，提供了使用内容类型特定对象在数据库系统中对内容进行版本化的机制和方法。用于使用内容类型特定对象对数据库系统中的内容进行版本化的这些机制和方法可使实施例能够提供存储与多个内容版本相关联的信息的数据库系统。实施例提供支持内容版本化的数据库系统的能力可以实现数据库系统具有不同特征的内容类型的有效和全面的存储。

10. 发明授权

US07883959B2 Semiconductor processing methods 有权
标题翻译：半导体加工方法
公开(公告)号：US07883959B2
公开(公告)日：2011-02-08
申请号：US12855585
申请日：2010-08-12
申请人： Mark Fischer , Terrence B. McDaniel
发明人： Mark Fischer , Terrence B. McDaniel
IPC分类号： H01L21/8234 , H01L21/8244
CPC分类号： H01L23/5225 , H01L27/0207 , H01L27/105 , H01L27/10897 , H01L2924/0002 , H01L2924/00
摘要： The invention includes methods of forming electrically conductive material between line constructions associated with a peripheral region or a pitch region of a semiconductor substrate. The electrically conductive material can be incorporated into an electrically-grounded shield, and/or can be configured to create a magnetic field bias. Also, the conductive material can have electrically isolated segments that are utilized as electrical jumpers for connecting circuit elements. The invention also includes semiconductor constructions comprising the electrically conductive material between line constructions associated with one or both of the pitch region and the peripheral region.
摘要翻译：本发明包括在与半导体衬底的外围区域或间距区域相关联的线路构造之间形成导电材料的方法。导电材料可以结合到电接地屏蔽中，和/或可以被配置成产生磁场偏置。此外，导电材料可以具有用作连接电路元件的电跳线的电隔离段。本发明还包括在与线圈结构相关联的线路结构之间包括导电材料的半导体结构，其与音调区域和外围区域中的一个或两个相关联。

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