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1. 发明授权

US5208648A Apparatus and a method for high numerical aperture microscopic examination of materials 失效
标题翻译：装置和材料高数值孔径微观检验方法
公开(公告)号：US5208648A
公开(公告)日：1993-05-04
申请号：US667773
申请日：1991-03-11
申请人： John S. Batchelder , Philip C. D. Hobbs , Marc A. Taubenblatt , Douglas W. Cooper
发明人： John S. Batchelder , Philip C. D. Hobbs , Marc A. Taubenblatt , Douglas W. Cooper
IPC分类号： G01N21/88 , G01J3/42 , G01J3/44 , G01J9/02 , G01N21/35 , G01N21/95 , G01N21/956 , G01Q30/02 , G02B3/00 , G02B21/00 , G02B27/00 , H01L21/66
CPC分类号： G01N21/9505 , G02B21/0016 , G02B3/00 , G01J2003/421 , G01J2009/0207 , G01J3/44 , G01N2021/1725 , G01N2021/1782 , G01N2021/8822 , G01N21/3563 , G01N21/359 , G01N2201/0638 , G01N2201/1087
摘要： Apparatus and a method for performing high resolution optical imaging in the near infrared of internal features of semiconductor wafers uses an optical device made from a material having a high index of refraction and held in very close proximity to the wafer. The optical device may either be a prism or a plano-convex lens. The plano-convex lens may be held in contact with the wafer or separated from the wafer via an air bearing or an optical coupling fluid to allow the sample to be navigated beneath the lens. The lens may be used in a number of optical instruments such as a bright field microscope, a Schlieren microscope, a dark field microscope, a Linnik interferometer, a Raman spectroscope and an absorption spectroscope.

2. 发明授权

US5343290A Surface particle detection using heterodyne interferometer 失效
标题翻译：使用外差干涉仪进行表面粒子检测
公开(公告)号：US5343290A
公开(公告)日：1994-08-30
申请号：US897198
申请日：1992-06-11
申请人： John S. Batchelder , Donald M. DeCain , Philip C. D. Hobbs , Marc A. Taubenblatt
发明人： John S. Batchelder , Donald M. DeCain , Philip C. D. Hobbs , Marc A. Taubenblatt
IPC分类号： G01B9/02 , G01B11/30 , G01J9/04 , G01N21/47 , G01N21/88 , G01N21/93 , G01N21/94 , G01N21/95 , G01N21/956 , H01L21/66
CPC分类号： G01N21/94 , G01J9/04 , G01N2021/8822 , G01N21/47 , G01N21/9501
摘要： A heterodyne interferometer is combined with darkfield surface particle detection for improved surface particle detection sensitivity. The probe beam and the reference beam have different wavelengths. The reference beam may either be a real reference beam or a virtual reference beam. The probe beam may be incident at the surface at either a grazing angle or at an angle substantially normal to the surface. The real reference beam is incident at the surface at a grazing angle. The detection may either be conventional heterodyne detection or a combination of heterodyne and Lloyd's mirror detection.
摘要翻译：外差干涉仪与暗场表面颗粒检测相结合，提高表面颗粒检测灵敏度。探测光束和参考光束具有不同的波长。参考光束可以是真实参考光束或虚拟参考光束。探针光束可以以掠射角度或基本上垂直于表面的角度入射在表面处。实际参考光束以掠射角入射在表面。检测可以是常规外差检测或外差和劳合镜检测的组合。

3. 发明授权

US5220403A Apparatus and a method for high numerical aperture microscopic examination of materials 失效
标题翻译：高数值孔径显微镜检查材料的仪器和方法
公开(公告)号：US5220403A
公开(公告)日：1993-06-15
申请号：US954282
申请日：1992-09-30
申请人： John S. Batchelder , Philip C. D. Hobbs , Marc A. Taubenblatt
发明人： John S. Batchelder , Philip C. D. Hobbs , Marc A. Taubenblatt
IPC分类号： G01J3/42 , G01J3/44 , G01J9/02 , G01N21/35 , G01N21/95 , G02B3/00 , G02B21/00
CPC分类号： G01N21/9505 , G02B21/0016 , G02B3/00 , G01J2003/421 , G01J2009/0207 , G01J3/44 , G01N2021/1725 , G01N2021/1782 , G01N2021/8822 , G01N21/3563 , G01N21/359 , G01N2201/0638 , G01N2201/1087
摘要： Apparatus and a method for performing high resolution optical imaging in the near infrared of internal features of semiconductor wafers uses an optical device made from a material having a high index of refraction and held in very close proximity to the wafer. The optical device may either be a prism or a plano-convex lens. The plano-convex lens may be held in contact with the wafer or separated from the wafer via an air bearing or an optical coupling fluid to allow the sample to be navigated beneath the lens. The lens may be used in a number of optical instruments such as a bright field microscope, a Schlieren microscope, a dark field microscope, a Linnik interferometer, a Raman spectroscope and an absorption spectroscope.
摘要翻译：在半导体晶片的内部特征的近红外线中执行高分辨率光学成像的装置和方法使用由具有高折射率的材料制成的光学装置，并且保持非常靠近晶片。光学器件可以是棱镜或平凸透镜。平凸透镜可以保持与晶片接触或通过空气轴承或光耦合流体与晶片分离，以允许样品在透镜下面导航。透镜可以用于许多光学仪器，例如明视野显微镜，Schlieren显微镜，暗视野显微镜，Linnik干涉仪，拉曼光谱仪和吸收光谱仪。

4. 发明授权

US5133602A Particle path determination system 失效
标题翻译：粒径测定系统
公开(公告)号：US5133602A
公开(公告)日：1992-07-28
申请号：US682752
申请日：1991-04-08
申请人： John S. Batchelder , Donald M. DeCain , Philip C. D. Hobbs , Marc A. Taubenblatt
发明人： John S. Batchelder , Donald M. DeCain , Philip C. D. Hobbs , Marc A. Taubenblatt
IPC分类号： G01N15/14 , G01N15/02 , G01N21/21 , G01P11/00
CPC分类号： G01N15/0205 , G01N2015/0238 , G01N2021/1759 , G01N2021/4792
摘要： A bright-field, particle position determining optical system is disclosed that uses both phase shift and extinction signals to determine particle trajectories. In a first embodiment, a pair of orthogonally polarized beams are positioned along an axis that intersects a particle's flow path at an acute angle. An optical system recombines the beams after they exit the flow path, the combined beams manifesting an elliptical polarization if a particle intersects one of the beams. Bright field detectors detect polarization components of the combined beam, provide a phase shift signal between the beam's orthogonal components and provide corresponding signals to a processor. The processor determines a signal asymmetry from the phase shift signal that is indicative of a particle's position in the flow path. Another embodiment of the invention examines a signal resulting from the beam's phase shift and determines a correction factor that is dependent upon the distance of the particle from the focal plane of the beams. Another embodiment employs a dithering system for cyclically moving one or more optical beams across a particle to further enable its trajectory or position to be determined.
摘要翻译：公开了使用相移和消光信号来确定粒子轨迹的明场，粒子位置确定光学系统。在第一实施例中，一对正交偏振光束沿着与颗粒的流动通道以锐角相交的轴线定位。光束在离开流路之后将光束重新组合，如果粒子与光束之一相交，那么组合光束表现出椭圆极化。光场检测器检测组合光束的偏振分量，在光束的正交分量之间提供相移信号，并向处理器提供相应的信号。处理器确定来自指示颗粒在流动路径中的位置的相移信号的信号不对称性。本发明的另一个实施例检查由光束的相移产生的信号，并确定取决于粒子与光束的焦平面的距离的校正因子。另一个实施例采用抖动系统来循环移动一个或多个光束穿过颗粒，以进一步确定其轨迹或位置。

5. 发明授权

US5177559A Dark field imaging defect inspection system for repetitive pattern integrated circuits 失效
标题翻译：用于重复图案集成电路的暗场成像缺陷检查系统
公开(公告)号：US5177559A
公开(公告)日：1993-01-05
申请号：US701936
申请日：1991-05-17
申请人： John S. Batchelder , Marc A. Taubenblatt
发明人： John S. Batchelder , Marc A. Taubenblatt
IPC分类号： G01B11/24 , G01N21/88 , G01N21/94 , G01N21/956 , H01L21/66
CPC分类号： G02B21/10 , G01N21/95623 , G01N2021/8822
摘要： An optical inspection system for patterned semiconductor wafers generates a dark field image of the wafer by applying a collimated beam of monochrome light at an incident angle with respect to the surface of the wafer of between 8.degree. and a maximum angle defined by the numerical aperture of the imaging system and collecting the light which is scattered at angles approximately normal to the surface of the wafer and within the numerical aperture of the imaging system. In addition, the incident light is at an angle of 45.degree. in the surface plane of the wafer with respect to the rectangular lines which predominate in the pattern. Before forming the dark field image, the collected light is passed through a Fourier transform filter which substantially attenuates spatial frequency components corresponding to the pattern. In the resultant dark field image, defects in the pattern and contaminating particles are accentuated relative to the pattern features.
摘要翻译：用于图案化半导体晶片的光学检查系统通过以相对于晶片表面的入射角施加8°的准直光束和由数字孔径的数值孔径限定的最大角度来施加晶片的暗视场图像成像系统并收集以大致垂直于晶片表面并且在成像系统的数值孔径内散射的光。此外，入射光在晶片的表面平面上相对于以图案为主的矩形线成45度的角度。在形成暗场图像之前，所收集的光通过傅里叶变换滤波器，该滤波器基本上衰减对应于图案的空间频率分量。在所得到的暗场图像中，图案和污染颗粒中的缺陷相对于图案特征被加强。

6. 发明授权

US5061070A Particulate inspection of fluids using interferometric light measurements 失效
标题翻译：使用干涉光测量对流体进行颗粒物检测
公开(公告)号：US5061070A
公开(公告)日：1991-10-29
申请号：US184639
申请日：1988-04-22
申请人： John S. Batchelder , Donald M. DeCain , Marc A. Taubenblatt , Hermantha K. Wickramasinghe , Clayton C. Williams
发明人： John S. Batchelder , Donald M. DeCain , Marc A. Taubenblatt , Hermantha K. Wickramasinghe , Clayton C. Williams
IPC分类号： G01N15/14 , G01J9/02 , G01N15/00 , G01N15/02 , G01N15/06 , G01N21/23 , G01N21/45 , G01N21/94
CPC分类号： G01N21/45 , G01J2009/0261 , G01N2015/0011 , G01N2015/0053 , G01N2015/0238 , G01N21/94
摘要： A method and apparatus for monitoring process fluids used in the manufacture of semiconductor components and other microelectronic devices relies upon detection of the phase shift of a pair of optical energy beams encountering a bubble or particle in the fluid. The system distinguishes between bubbles and particles having indices of refraction greater than the surrounding fluid and between different types and sizes of particles.

7. 发明授权

US5037202A Measurement of size and refractive index of particles using the complex forward-scattered electromagnetic field 失效
$Measurement of size and refractive index of particles using the complex forward-scattered electromagnetic field$
标题翻译：使用复合前向散射电磁场测量粒子的尺寸和折射率
公开(公告)号：US5037202A
公开(公告)日：1991-08-06
申请号：US547735
申请日：1990-07-02
申请人： John S. Batchelder , Marc A. Taubenblatt
发明人： John S. Batchelder , Marc A. Taubenblatt
IPC分类号： G01J9/02 , G01N15/02 , G01N15/14 , G01N21/21 , G01N21/45
CPC分类号： G01N15/0205 , G01J2009/0261 , G01N15/1434 , G01N2015/0238 , G01N21/45
摘要： An apparatus is described for classifying particles and includes an optical system for transmitting to a focal plane which includes at least one particle, two substantially parallel optical beams, the beams being initially mutually coherent but of different polarizations. The beams are displaced and focused in the focal plane. A further optical system is positioned in the path which the beam takes after depating from the focal plane and combines the beams so that a particle-induced phase shift in one beam is manifest by a change in elliptical polarization of the combined beams. A first detector is responsive to the beam's intensity along a first polarization axis to produce a first output and a second detector is responsive to the beams intensity along a second polarization axis to produce a second output. The first and second outputs are added to provide an extinction signal and, in a separate device, are subtracted to provide to phase shift signal. The extinction signal and phase shift signal are both fed to a processor which classifies a particle in accordance therewith.

8. 发明授权

US08901576B2 Silicon photonics wafer using standard silicon-on-insulator processes through substrate removal or transfer 有权
标题翻译：硅光子晶片使用标准的绝缘体上硅工艺，通过衬底去除或转移
公开(公告)号：US08901576B2
公开(公告)日：2014-12-02
申请号：US13353162
申请日：2012-01-18
申请人： Fuad E. Doany , Benjamin G. Lee , Alexander V. Rylyakov , Clint L. Schow , Marc A. Taubenblatt
发明人： Fuad E. Doany , Benjamin G. Lee , Alexander V. Rylyakov , Clint L. Schow , Marc A. Taubenblatt
IPC分类号： H01L33/00 , H01L29/18 , H01L21/00
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译：提供了硅光子晶片的处理。接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。还接收包括有源电层的电CMOS晶片。硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。去除暴露出薄的掩埋氧化物层的背面的硅衬底。将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。

9. 发明申请

US20130181233A1 SILICON PHOTONICS WAFER USING STANDARD SILICON-ON-INSULATOR PROCESSES THROUGH SUBSTRATE REMOVAL OR TRANSFER 有权
标题翻译：使用通过基板去除或转移的标准硅绝缘体工艺的硅光电晶体
公开(公告)号：US20130181233A1
公开(公告)日：2013-07-18
申请号：US13353162
申请日：2012-01-18
申请人： Fuad E. Doany , Benjamin G. Lee , Alexander V. Rylyakov , Clint L. Schow , Marc A. Taubenblatt
发明人： Fuad E. Doany , Benjamin G. Lee , Alexander V. Rylyakov , Clint L. Schow , Marc A. Taubenblatt
IPC分类号： H01L33/60 , H01L33/08
CPC分类号： H01L21/76251
摘要： Processing for a silicon photonics wafer is provided. A silicon photonics wafer that includes an active silicon photonics layer, a thin buried oxide layer, and a silicon substrate is received. The thin buried oxide layer is located between the active silicon photonics layer and the silicon substrate. An electrical CMOS wafer that includes an active electrical layer is also received. The active silicon photonics layer of the silicon photonics wafer is flip chip bonded to the active electrical layer of the electrical CMOS wafer. The silicon substrate is removed exposing a backside surface of the thin buried oxide layer. A low-optical refractive index backing wafer is added to the exposed backside surface of the thin buried oxide layer. The low-optical refractive index backing wafer is a glass substrate or silicon substrate wafer. The silicon substrate wafer includes a thick oxide layer that is attached to the thin buried oxide layer.
摘要翻译：提供了硅光子晶片的处理。接收包括有源硅光子学层，薄掩埋氧化物层和硅衬底的硅光子晶片。薄的掩埋氧化物层位于有源硅光子层和硅衬底之间。还接收包括有源电层的电CMOS晶片。硅光子晶片的有源硅光子层被倒装芯片结合到电CMOS晶片的有源电层。去除暴露出薄的掩埋氧化物层的背面的硅衬底。将低光学折射率背衬晶片添加到薄的掩埋氧化物层的暴露的背面。低光学折射率背衬晶片是玻璃衬底或硅衬底晶片。硅衬底晶片包括附着到薄掩埋氧化物层的厚氧化物层。

10. 发明授权

US06678569B2 User configurable multivariate time series reduction tool control method 有权
标题翻译：用户可配置的多变量时间序列减少工具控制方法
公开(公告)号：US06678569B2
公开(公告)日：2004-01-13
申请号：US10013070
申请日：2001-11-06
申请人： Raymond J. Bunkofske , John Z. Colt, Jr. , James J McGill , Nancy T. Pascoe , Maheswaran Surendra , Marc A. Taubenblatt , Asif Ghias
发明人： Raymond J. Bunkofske , John Z. Colt, Jr. , James J McGill , Nancy T. Pascoe , Maheswaran Surendra , Marc A. Taubenblatt , Asif Ghias
IPC分类号： G06F1900
CPC分类号： G05B23/0221 , G05B2219/45031 , H01L22/20
摘要： A method and structure for controlling a manufacturing tool includes measuring different manufacturing parameters of the tool, transforming a plurality of time series of the manufacturing parameters into intermediate variables based on restrictions and historical reference statistics, generating a surrogate variable based on the intermediate variables, if the surrogate variable exceeds a predetermined limit, identifying a first intermediate variable, of the intermediate variables, that caused the surrogate variable to exceed the predetermined limit and identifying a first manufacturing parameter associated with the first intermediate variable, and inhibiting further operation of the tool until the first manufacturing parameter has been modified to bring the surrogate value within the predetermined limit.
摘要翻译：用于控制制造工具的方法和结构包括测量工具的不同制造参数，基于限制和历史参考统计将多个制造参数的时间序列变换为中间变量，基于中间变量生成替代变量，如果替代变量超过预定的限制，识别导致替代变量超过预定极限的中间变量的第一中间变量，并且识别与第一中间变量相关联的第一制造参数，并且禁止工具的进一步操作直到修改了第一制造参数以使代理值在预定限度内。

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