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1. 发明授权

US08403727B1 Pre-planarization system and method 有权
标题翻译：预平面化系统和方法
公开(公告)号：US08403727B1
公开(公告)日：2013-03-26
申请号：US10816417
申请日：2004-03-31
申请人： Fred C. Redeker , John M. Boyd , Yezdi Dordi , Sabir A. Majumder , Simon McClatchie
发明人： Fred C. Redeker , John M. Boyd , Yezdi Dordi , Sabir A. Majumder , Simon McClatchie
IPC分类号： B24B1/00 , B24B7/19 , B24B7/30
CPC分类号： H01L21/32115 , B24B37/042 , B24B37/107 , B24B37/11 , B24D7/06 , H01L21/68785
摘要： A method for producing a normalized surface on a substrate for a chemical mechanical planarization process is provided. The method initiates with grinding a surface of the substrate with a first surface associated with a first planarization length. The method includes planarizing the surface of the substrate with a second surface associated with a second planarization length. Here, the second planarization length being less than the first planarization length. A system for processing a semiconductor substrate is also provided.
摘要翻译：提供了一种用于在化学机械平面化处理用基板上制造标准化表面的方法。该方法通过用与第一平坦化长度相关联的第一表面研磨衬底的表面来启动。该方法包括用与第二平坦化长度相关联的第二表面平坦化衬底的表面。这里，第二平坦化长度小于第一平坦化长度。还提供了一种用于处理半导体衬底的系统。

2. 发明授权

US07108591B1 Compliant wafer chuck 失效
标题翻译：符合晶圆卡盘
公开(公告)号：US07108591B1
公开(公告)日：2006-09-19
申请号：US10816418
申请日：2004-03-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24B5/02 , B24B7/04 , B24B1/00
CPC分类号： B24B37/30
摘要： A semiconductor substrate support is provided. The semiconductor substrate support includes a chuck configured to change between a compliant state and a rigid state. An electromagnetic field source configured to apply an electromagnetic field to the chuck is included. The electromagnetic field causes the chuck to change from the compliant state to the rigid state. A method for supporting a semiconductor substrate and a system for cleaning a substrate and an apparatus are also provided.
摘要翻译：提供半导体衬底支撑。半导体衬底支撑件包括构造成在柔顺状态和刚性状态之间变化的卡盘。包括被配置为向卡盘施加电磁场的电磁场源。电磁场使卡盘从顺从状态转变为刚性状态。还提供了一种用于支撑半导体衬底的方法和用于清洁衬底和装置的系统。

3. 发明授权

US07252736B1 Compliant grinding wheel 有权
标题翻译：合格砂轮
公开(公告)号：US07252736B1
公开(公告)日：2007-08-07
申请号：US10816504
申请日：2004-03-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24B1/00 , B24B5/02
CPC分类号： B24B7/228 , B24D13/142
摘要： A pre-planarization module configured to perform a long range planarization operation is provided. The pre-planarization module includes a semiconductor substrate support configured to rotate about a first axis. The pre-planarization module also includes an annular ring having a first side with a compliant layer affixed thereto. The second side of the compliant layer is affixed to a planarizing surface. The annular ring is configured to move perpendicular and parallel to a plane associated with the substrate support. Additionally, the annular ring is configured to rotate about a second axis, where the second axis is offset from the first axis. The substrate support and the annular ring rotate in the same direction. A method for performing a planarization process and a substrate grinding device are also provided.
摘要翻译：提供了一种配置成执行长距离平面化操作的预平面化模块。预平坦化模块包括构造成围绕第一轴线旋转的半导体衬底支撑件。预平坦化模块还包括环形环，其具有固定到其上的柔性层的第一侧。柔性层的第二面固定在平坦化表面上。环形环被配置为垂直并平行于与衬底支撑件相关联的平面移动。另外，环形环被构造成围绕第二轴线旋转，其中第二轴线从第一轴线偏移。基板支撑件和环形圈沿相同的方向旋转。还提供了一种用于执行平面化处理的方法和基板研磨装置。

4. 发明授权

US07090562B1 Methods of and apparatus for pre-planarizing a substrate 有权
标题翻译：预处理基板的方法和装置
公开(公告)号：US07090562B1
公开(公告)日：2006-08-15
申请号：US11217910
申请日：2005-08-31
申请人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
发明人： John M. Boyd , Fred C. Redeker , Yezdi Dordi
IPC分类号： B24D17/00
CPC分类号： B24B7/228
摘要： Methods and apparatus are provided to provide a substantially uniform layer thickness above a wafer contour as the wafer rotates and is traversed past a pre-planarization tool. The tool has a shank defining an axis of rotation, and a planarization member coupled to the shank has a hook-shaped section supporting a pre-planarization surface spaced by an at-rest-distance from the axis of during an at-rest condition of the shank. The hook-shaped section has a modulus of elasticity selected so that upon rotation, the hook-shaped section flexes and moves the pre-planarization surface to rotation-distances spaced from the axis in response to a velocity of rotation of the hook-shaped section around the axis in a range of velocities. As the tool rotates, metrology intermittently directly senses the layer thickness and controls the velocity of rotation so the rotation-distances have values in excess of a value of the at-rest-distance.
摘要翻译：提供了方法和装置，以便当晶片旋转并且穿过预平面化工具时，在晶片轮廓上方提供基本上均匀的层厚度。该工具具有限定旋转轴线的柄，并且联接到柄的平坦化构件具有钩形部分，该钩状部分支撑预平坦化表面，该预平面化表面与在静止状态期间与轴的静止距离间隔开小腿钩形部分具有选择的弹性模量，使得在旋转时，响应于钩形部分的旋转速度，钩形部分将预平坦化表面弯曲并移动到与轴线间隔开的旋转距离围绕轴线在一定范围的速度。当工具旋转时，计量学间歇地直接感知层厚度并控制旋转速度，因此旋转距离具有超过静止距离值的值。

5. 发明授权

US08623456B2 Methods for atomic layer deposition 有权
标题翻译：原子层沉积方法
公开(公告)号：US08623456B2
公开(公告)日：2014-01-07
申请号：US13605926
申请日：2012-09-06
申请人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
发明人： Hyungsuk Alexander Yoon , Mikhail Korolik , Fritz C. Redeker , John M. Boyd , Yezdi Dordi
IPC分类号： C23C16/22 , C23C16/44
CPC分类号： C23C16/45551 , C23C16/45517 , C23C16/54 , H01L21/28562 , H01L21/76843
摘要： A method of depositing a thin film by atomic layer deposition (ALD) on a substrate surface is disclosed. The disclosed method includes placing an ALD deposition proximity head above the substrate with at least one gas channel configured to dispense a gas to an active process region of the substrate surface. The ALD deposition proximity head extends over and is being spaced apart from the active process region of the substrate surface when present. After a pulse of a first reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head, a pulse of a second reactant gas is dispensed on the active process region of the substrate surface underneath the proximity head to react with the first reactant gas to form a portion of the thin layer of ALD film on the surface of substrate underneath the proximity head.
摘要翻译：公开了一种通过原子层沉积（ALD）在衬底表面上沉积薄膜的方法。所公开的方法包括将ALD沉积接近头放置在衬底上方，其中至少一个气体通道被配置为将气体分配到衬底表面的活性过程区域。 ALD沉积接近头在存在时延伸超过衬底表面的有效工艺区域并且与其间隔开。在将第一反应气体的脉冲分配在邻近头部下方的衬底表面的有源工艺区域上之后，第二反应气体的脉冲被分配在邻近头部下方的衬底表面的有源工艺区域上以与第一反应气体，以在邻近头部下方的基底表面上形成一部分ALD薄膜。

6. 发明申请

US20110306203A1 INTERCONNECT STRUCTURE AND METHOD OF MANUFACTURING A DAMASCENE STRUCTURE 审中-公开
标题翻译：互连结构和制造大分子结构的方法
公开(公告)号：US20110306203A1
公开(公告)日：2011-12-15
申请号：US13218035
申请日：2011-08-25
申请人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
发明人： Yezdi Dordi , John M. Boyd , Fritz C. Redeker , William Thie , Tiruchirapalli Arunagiri , Hyungsuk Alexander Yoon
IPC分类号： H01L21/768
CPC分类号： H01L23/53238 , H01L21/28562 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76873 , H01L21/76874 , H01L2221/1089 , H01L2924/0002 , H01L2924/00
摘要： An interconnect structure is provided, including a layer of dielectric material having at least one opening and a first barrier layer on sidewalls defining the opening. A ruthenium-containing second barrier layer overlays the first barrier layer, the second barrier layer having a ruthenium zone, a ruthenium oxide zone, and a ruthenium-rich zone. The ruthenium zone is interposed between the first barrier layer and the ruthenium oxide zone. The ruthenium oxide zone is interposed between the ruthenium zone and the ruthenium-rich zone.
摘要翻译：提供互连结构，包括具有至少一个开口的介电材料层和在限定开口的侧壁上的第一阻挡层。含钌的第二阻挡层覆盖第一阻挡层，第二阻挡层具有钌区，氧化钌区和富钌区。钌区介于第一阻挡层和氧化钌区之间。钌氧化物区位于钌区和富钌区之间。

7. 发明申请

US20100239767A1 Apparatus for Applying a Plating Solution for Electroless Deposition 审中-公开
标题翻译：用于电镀沉积的电镀溶液的设备
公开(公告)号：US20100239767A1
公开(公告)日：2010-09-23
申请号：US12790558
申请日：2010-05-28
申请人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
发明人： Yezdi Dordi , William Thie , John M. Boyd , Fritz C. Redeker , Aleksander Owczarz
IPC分类号： B05D3/00
CPC分类号： H01L21/02074 , C23C18/1628 , C23C18/38 , C23C18/50 , H01L21/288 , H01L21/76849 , H01L21/76883 , Y10S134/902
摘要： An electroless plating chamber is provided. The electroless plating chamber includes a chuck configured to support a substrate and a bowl surrounding a base and a sidewall of the chuck. The base has an annular channel defined along an inner diameter of the base. The chamber includes a drain connected to the annular channel. The drain is capable of removing fluid collected from the chuck. A proximity head capable of cleaning and substantially drying the substrate is included in the chamber. A method for performing an electroless plating operation is also provided.
摘要翻译：提供无电镀室。化学镀室包括配置成支撑基板的卡盘和围绕卡盘的基部和侧壁的碗。底座具有沿着底座的内径限定的环形通道。该腔室包括连接到环形通道的排水口。排水口能够去除从卡盘收集的流体。能够清洁和基本上干燥基板的接近头包括在腔室中。还提供了一种执行化学镀操作的方法。

8. 发明申请

US20080254621A1 Wafer Electroless Plating System and Associated Methods 有权
标题翻译：晶圆化学镀系统及相关方法
公开(公告)号：US20080254621A1
公开(公告)日：2008-10-16
申请号：US11735984
申请日：2007-04-16
申请人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
IPC分类号： H01L21/44 , B05C11/11 , B05C13/00
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1632 , H01L21/76873
摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
摘要翻译：公开了一种用于晶片无电镀的干/干输出系统。该系统包括用于晶片入口/出口和干燥操作的上部区域。靠近头部设置在上部区域以执行干燥操作。该系统还包括用于无电镀操作的下部区域。下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。系统是环境控制的。此外，系统与环境受控的托管传输模块（MTM）接口。

9. 发明申请

US20080227369A1 Apparatus and Method for Confined Area Planarization 有权
标题翻译：密闭面平面化装置与方法
公开(公告)号：US20080227369A1
公开(公告)日：2008-09-18
申请号：US12129612
申请日：2008-05-29
申请人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
发明人： John M. Boyd , Fritz C. Redeker , Yezdi Dordi , Michael Ravkin , John de Larios
IPC分类号： B24B57/02 , H05K3/07 , C25F3/00
CPC分类号： H01L21/32115 , C25F7/00
摘要： A proximity head and associated method of use is provided for performing confined area planarization of a semiconductor wafer. The proximity head includes a chamber defined to maintain an electrolyte solution. A cathode is disposed within the chamber in exposure to the electrolyte solution. A cation exchange membrane is disposed over a lower opening of the chamber. A top surface of the cation exchange membrane is in direct exposure to the electrolyte solution to be maintained within the chamber. A fluid supply channel is defined to expel fluid at a location adjacent to a lower surface of the cation exchange membrane. A vacuum channel is defined to provide suction at a location adjacent to the lower surface of the cation exchange membrane, such that the fluid to be expelled from the fluid supply channel is made to flow over the lower surface of the cation exchange membrane.
摘要翻译：提供接近头和相关联的使用方法用于执行半导体晶片的限定区域平坦化。邻近头包括限定为维持电解质溶液的室。在室内暴露于电解质溶液中设置阴极。阳离子交换膜设置在室的下部开口的上方。阳离子交换膜的顶表面直接暴露于电解质溶液中以保持在室内。流体供应通道被定义为在邻近阳离子交换膜的下表面的位置排出流体。定义真空通道以在邻近阳离子交换膜的下表面的位置处提供吸力，使得要从流体供应通道排出的流体流过阳离子交换膜的下表面。

10. 发明申请

US20080085370A1 ELECTROLESS PLATING METHOD AND APPARATUS 有权
标题翻译：电镀方法和装置
公开(公告)号：US20080085370A1
公开(公告)日：2008-04-10
申请号：US11539155
申请日：2006-10-05
申请人： William Thie , John M. Boyd , Yezdi Dordi , Fritz C. Redeker
发明人： William Thie , John M. Boyd , Yezdi Dordi , Fritz C. Redeker
IPC分类号： B05D1/18 , B05C3/00
CPC分类号： C23C18/1617 , C23C18/163 , C23C18/1678 , H01L21/67092
摘要： An electroless plating system is provided. The system includes a first vacuum chuck supporting a first wafer and a second vacuum chuck supporting a second wafer such that a top surface of the second wafer is opposing a top surface of the first wafer. The system also includes a fluid delivery system configured to deliver a plating solution to the top surface of the first wafer, wherein in response to delivery of the plating solution, the top surface of the second wafer is brought proximate to the top surface of the first wafer so that the plating solution contacts both top surfaces. A method for applying an electroless plating solution to a substrate is also provided.
摘要翻译：提供无电镀系统。该系统包括支撑第一晶片的第一真空卡盘和支撑第二晶片的第二真空卡盘，使得第二晶片的顶表面与第一晶片的顶表面相对。该系统还包括配置成将电镀溶液输送到第一晶片的顶表面的流体输送系统，其中响应于电镀溶液的输送，第二晶片的顶表面靠近第一晶片的顶表面使得电镀溶液接触两个顶表面。还提供了一种将无电镀液施加到基底上的方法。

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