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1. 发明授权

US06589332B1 Method and system for measuring polycrystalline chunk size and distribution in the charge of a Czochralski process 失效
标题翻译：测量多晶块尺寸和分布在Czochralski工艺中的方法和系统
公开(公告)号：US06589332B1
公开(公告)日：2003-07-08
申请号：US09419151
申请日：1999-10-15
申请人： John D. Holder , Steven Joslin , Hariprasad Sreedharamurthy , John Lhamon
发明人： John D. Holder , Steven Joslin , Hariprasad Sreedharamurthy , John Lhamon
IPC分类号： C30B1500
CPC分类号： C30B15/02 , G01N15/0227
摘要： A method and system for determining polycrystalline silicon chunk size for use with a Czochralski silicon growing process. Polycrystalline silicon chunks are arranged on a measuring background. A camera captures an image of the chunks. An image processor processes the image and determines the dimensions of the chunks based on the captured image. A size parameter associated with the chunks is determined.
摘要翻译：用于确定与切克劳斯基硅生长工艺一起使用的多晶硅块尺寸的方法和系统。多晶硅块布置在测量背景上。相机拍摄大块图像。图像处理器处理图像并基于捕获的图像确定块的尺寸。确定与块相关联的尺寸参数。

2. 发明授权

US06284040B1 Process of stacking and melting polycrystalline silicon for high quality single crystal production 失效
标题翻译：多晶硅堆垛和熔化工艺为高品质单晶生产
公开(公告)号：US06284040B1
公开(公告)日：2001-09-04
申请号：US09229540
申请日：1999-01-13
申请人： John D. Holder , Hariprasad Sreedharamurthy
发明人： John D. Holder , Hariprasad Sreedharamurthy
IPC分类号： C30B1500
CPC分类号： C30B15/02
摘要： An improved process for forming a single crystal silicon ingot from solid, varying sized chunks of polycrystalline silicon source material according to the Czochralski method. The process includes classifying each chunk of source material by size, placing chunks of source material into a crucible to form a stack in the crucible. The chunks are generally placed within at least three regions of the crucible that are pre-selected according to the size classifications of the chunks. The stack within the crucible is melted in an inert environment at an elevated temperature to form a source melt, and the temperature of the crucible and the source melt is stabilized to an equilibrium level suitable for crystal growth. The single crystal silicon ingot is pulled from the source melt according to the Czochralski method. In another aspect, the step of melting the stack is taken while the crucible has an ambient pressure that is greater than an ambient pressure when the step of stabilizing the temperature is taken.
摘要翻译：根据Czochralski方法从固体不同大小的多晶硅源材料块形成单晶硅锭的改进方法。该过程包括按照大小对每个源材料块进行分类，将源材料块放入坩埚中以在坩埚中形成堆叠。这些块通常放置在坩埚的至少三个区域中，这些区域根据块的尺寸分类被预先选择。坩埚内的叠层在高温下在惰性环境中熔融，形成源熔体，坩埚和源熔体的温度稳定在适合于晶体生长的平衡水平。根据Czochralski法将单晶硅锭从源熔体中拉出。另一方面，当采用稳定温度的步骤时，在坩埚具有大于环境压力的环境压力的同时，采取熔化堆叠的步骤。

3. 发明授权

US07291222B2 Systems and methods for measuring and reducing dust in granular material 有权
标题翻译：用于测量和减少颗粒材料中灰尘的系统和方法
公开(公告)号：US07291222B2
公开(公告)日：2007-11-06
申请号：US10930654
申请日：2004-08-31
申请人： John D. Holder , Hariprasad Sreedharamurthy , John D. Hilker
发明人： John D. Holder , Hariprasad Sreedharamurthy , John D. Hilker
IPC分类号： C30B15/02
CPC分类号： B07B4/04 , C01B33/027 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.
摘要翻译：本发明涉及用于测量和减少颗粒状多晶硅中的粉尘的装置和方法。一方面，系统包括具有用于从多晶硅拉出灰尘的真空端口的处理容器。本发明的另一个系统包括用于接收多晶硅流的挡板管。测量系统包括用于分离和测量多晶硅流中的灰尘的歧管和过滤器。本发明还涉及使用该系统，制造和包装颗粒状多晶硅的方法以及颗粒状多晶硅供应的方法。

4. 发明授权

US4231796A Internal zone growth method for producing metal oxide metal eutectic composites 失效
标题翻译：用于生产金属氧化物金属共晶复合材料的内部区域生长方法
公开(公告)号：US4231796A
公开(公告)日：1980-11-04
申请号：US964406
申请日：1978-11-28
申请人： Grady W. Clark , John D. Holder , Arvid E. Pasto
发明人： Grady W. Clark , John D. Holder , Arvid E. Pasto
IPC分类号： C22C47/00 , B22F3/105 , C22C1/10 , C22C29/12 , C30B21/04 , B22F3/00
CPC分类号： C22C29/12 , B22F3/105 , C22C1/1036 , C30B21/04
摘要： An improved method for preparing a cermet comprises preparing a compact having about 85 to 95 percent theoretical density from a mixture of metal and metal oxide powders from a system containing a eutectic composition, and inductively heating the compact in a radiofrequency field to cause the formation of an internal molten zone. The metal oxide particles in the powder mixture are effectively sized relative to the metal particles to permit direct inductive heating of the compact by radiofrequency from room temperature. Surface melting is prevented by external cooling or by effectively sizing the particles in the powder mixture.
摘要翻译：制备金属陶瓷的改进方法包括从含有共晶组合物的体系的金属和金属氧化物粉末的混合物制备具有约85至95％理论密度的压块，并且在射频场中感应加热压块以引起形成内部熔融区。粉末混合物中的金属氧化物颗粒相对于金属颗粒有效地定尺寸，以允许通过射频从室温直接感应加热压块。通过外部冷却或通过有效地调整粉末混合物中的颗粒来防止表面熔融。

5. 发明授权

US07497907B2 Partially devitrified crucible 有权
标题翻译：部分失透坩埚
公开(公告)号：US07497907B2
公开(公告)日：2009-03-03
申请号：US10898148
申请日：2004-07-23
申请人： John D. Holder , Richard J. Phillips
发明人： John D. Holder , Richard J. Phillips
IPC分类号： C30B35/00
CPC分类号： C30B15/10 , Y10T117/10 , Y10T117/1024 , Y10T117/1052
摘要： A vitreous crucible for holding semiconductor material during a moncrystalline ingot growing process has a sidewall. Part of the sidewall is coated with a devitrification promoter and part of the sidewall is substantially free from devitrification promoter coating. When the crucible is heated as it would be during an ingot growing process, the devitrification promoter induces crystallization of portions of the sidewall, thereby forming enhanced stiffness sidewall portions. Areas that are substantially free from devitrification promoters remain vitreous and are softened by the heat. These become stress accommodating sidewall portions. Flow of the vitreous material in the stress accommodating sidewall portions relieves stresses that would otherwise build up in the sidewall.
摘要翻译：在单晶锭生长过程中用于保持半导体材料的玻璃坩埚具有侧壁。侧壁的一部分涂覆有失透促进剂，侧壁的一部分基本上不含失透促进剂涂层。当坩埚在锭生长过程中被加热时，失透促进剂引起侧壁部分的结晶，由此形成增强的刚度侧壁部分。基本上没有失透促进剂的区域保持玻璃状并被热量软化。这些变为应力容纳侧壁部分。应力容纳侧壁部分中的玻璃质材料的流动减轻否则会在侧壁中积聚的应力。

6. 发明申请

US20130086491A1 AUTOMATICALLY GENERATING A BUSINESS PROCESS FLOW GUI USING A SYMBOLIC ANNOTATION LANGUAGE 有权
标题翻译：使用符号语音语言自动生成业务流程图
公开(公告)号：US20130086491A1
公开(公告)日：2013-04-04
申请号：US13460374
申请日：2012-04-30
申请人： Michael P. RODGERS , John D. Holder
发明人： Michael P. RODGERS , John D. Holder
IPC分类号： G06F3/01
CPC分类号： G06F17/241
摘要： A method, system, and computer program product for displaying an automatically generated graphical display of a business process flow to facilitate user interaction with enterprise software applications. A compact symbolic annotation language is used in conjunction with a flow generator to automatically generate a computer renderable description of the business process flow. The method commences by defining symbols to form an alphabet to be used in the symbolic annotation language. The compact symbolic language is capable of representing rich semantics including process operations, fork operations, and join operations. Once an agent (e.g., a person, a computer agent) has captured a particular business process flow using symbols of the compact symbolic annotation language, then a computer process performs a mapping of the symbols to a markup language. The markup language can be rendered in a graphical display. The markup language can be HTML/CSS, SVG, UML, or another markup language.
摘要翻译：一种方法，系统和计算机程序产品，用于显示业务流程流的自动生成的图形显示，以便于用户与企业软件应用程序的交互。紧凑的符号注释语言与流发生器结合使用，以自动生成计算机可视化业务流程描述。该方法通过定义符号以形成要在符号注释语言中使用的字母表开始。紧凑的符号语言能够表示丰富的语义，包括进程操作，分支操作和连接操作。一旦代理（例如，个人，计算机代理）使用紧凑符号注释语言的符号捕获了特定业务流程流，则计算机进程执行符号到标记语言的映射。标记语言可以在图形显示中呈现。标记语言可以是HTML / CSS，SVG，UML或另一种标记语言。

7. 发明授权

US6039801A Continuous oxidation process for crystal pulling apparatus 有权
标题翻译：晶体拉伸装置的连续氧化工艺
公开(公告)号：US6039801A
公开(公告)日：2000-03-21
申请号：US167747
申请日：1998-10-07
申请人： John D. Holder , Bayard K. Johnson
发明人： John D. Holder , Bayard K. Johnson
IPC分类号： C30B29/06 , C30B15/00 , C30B15/14
CPC分类号： C30B29/06 , C30B15/14 , Y10T117/1032
摘要： A continuous oxidation process and apparatus for using the same are disclosed. During growth of a semiconductor crystal an oxygen-containing gas is continuously injected into the crystal pulling apparatus in an exhaust tunnel downstream from the hot zone to continuously oxidize hypostoichiometric silicon dioxide, silicon vapor, and silicon monoxide produced in the hot zone during the crystal growth so as to minimize or eliminate the possibility of rapid over-pressurization of the apparatus upon exposure to the atmosphere.
摘要翻译：公开了一种连续氧化工艺及其使用方法。在半导体晶体生长期间，在热区下游的排气隧道中将含氧气体连续地注入到拉制装置中，以在晶体生长期间连续氧化在热区产生的化学计量的二氧化硅，硅蒸气和一氧化硅以便最小化或消除在暴露于大气中时装置的快速过压的可能性。

8. 发明授权

US5976247A Surface-treated crucibles for improved zero dislocation performance 失效
标题翻译：经表面处理的坩埚可提高零位错性能
公开(公告)号：US5976247A
公开(公告)日：1999-11-02
申请号：US490465
申请日：1995-06-14
申请人： Richard L. Hansen , Larry E. Drafall , Robert M. McCutchan , John D. Holder , Leon A. Allen , Robert D. Shelley
发明人： Richard L. Hansen , Larry E. Drafall , Robert M. McCutchan , John D. Holder , Leon A. Allen , Robert D. Shelley
IPC分类号： C30B29/06 , C03C17/02 , C03C17/34 , C30B15/10 , C30B35/00
CPC分类号： C03C17/3417 , C03C17/02 , C30B15/10 , C30B35/002 , C03C2217/213 , Y10S65/08 , Y10T117/10 , Y10T117/1052
摘要： A crucible in which a semiconductor material is melted and held during a crystal growing process. The crucible includes a body of vitreous silica having a bottom wall and a sidewall formation extending up from the bottom wall and defining a cavity for holding the molten semiconductor material. The sidewall formation has an inner and an outer surface. A first devitrification promoter on the inner surface of the sidewall formation is distributed such that a first layer of substantially devitrified silica is formed on the inner surface of the crucible which is in contact with the molten semiconductor material when the semiconductor material is melted in the crucible during the crystal growing process. A second devitrification promoter on the outer surface of the sidewall formation is distributed such that a second layer of substantially devitrified silica is formed on the outer surface of the crucible when the semiconductor material is melted in the crucible during the crystal growing process. The first substantially devitrified silica layer is such that it promotes uniform dissolution of the inner surface and in so doing significantly reduces the release of crystalline silica particulates into the molten semiconductor material as a crystal is pulled from the molten semiconductor material. The second substantially devitrified silica layer is such that it reinforces the vitreous silica body.
摘要翻译：坩埚，其中半导体材料在晶体生长过程中被熔化和保持。坩埚包括具有底壁和从底壁向上延伸并限定用于保持熔融半导体材料的空腔的玻璃体二氧化硅体。侧壁形成具有内表面和外表面。分布在侧壁结构的内表面上的第一失透促进剂，使得当半导体材料在坩埚中熔化时，在与熔融半导体材料接触的坩埚的内表面上形成基本上失透的二氧化硅的第一层在晶体生长过程中。分布在侧壁形状的外表面上的第二失透促进剂，使得当晶体生长过程中半导体材料在坩埚中熔化时，在坩埚的外表面上形成第二层基本上失透的二氧化硅。第一基本上反玻璃化的二氧化硅层是促进内表面的均匀溶解，并且在这样做时，晶体从熔融半导体材料中拉出时，显着地减少了结晶二氧化硅微粒释放到熔融半导体材料中。第二基本上反玻璃化的二氧化硅层使得它增强了二氧化硅玻璃体。

9. 发明授权

US5795381A SIO probe for real-time monitoring and control of oxygen during czochralski growth of single crystal silicon 失效
标题翻译： SIO探针用于实时监测和控制单晶硅生长期间的氧气
公开(公告)号：US5795381A
公开(公告)日：1998-08-18
申请号：US711085
申请日：1996-09-09
申请人： John D. Holder
发明人： John D. Holder
IPC分类号： C30B15/20 , C30B29/06 , G01N33/00 , G01N33/20 , H01L21/208 , C30B15/00
CPC分类号： G01N33/0011 , G01N33/203 , G01N33/206
摘要： Methods for quantifying, in near real-time, the amount of silicon oxide (SiO) volatilized from a pool of molten silicon such as a Czochralski silicon melt and present in the atmosphere over the melt are disclosed. A preferred method includes reacting a gas sample containing SiO withdrawn from the atmosphere over the molten silicon with a reactant to form a detectable reaction product, determining the amount of reaction product formed, and correlating the determined amount of reaction product to the amount of SiO present in the atmosphere. The quantification of SiO is used for monitoring and/or controlling the amount of oxygen in the molten silicon or the oxygen content in single crystal silicon being drawn from the molten silicon. A SiO reaction probe and a system using the probe for monitoring and/or controlling oxygen are also disclosed.
摘要翻译：公开了几乎实时量化从熔融硅熔融硅（例如Czochralski硅熔体）和在熔融物中的大气中存在的氧化硅（SiO）的量的量。优选的方法包括将含有从熔融硅上取出的大气中的SiO的气体样品与反应物反应以形成可检测的反应产物，测定形成的反应产物的量，并将确定的反应产物量与SiO存在量相关联在大气中 SiO的定量用于监测和/或控制熔融硅中的氧的量或从熔融硅吸取的单晶硅中的氧含量。还公开了SiO反应探针和使用该探针监测和/或控制氧气的系统。

10. 发明授权

US06749683B2 Process for producing a silicon melt 失效
标题翻译：硅熔体的制造方法
公开(公告)号：US06749683B2
公开(公告)日：2004-06-15
申请号：US10036875
申请日：2001-10-23
申请人： John D. Holder
发明人： John D. Holder
IPC分类号： C30B1520
CPC分类号： C30B29/06 , C30B15/02
摘要： A process for controlling the amount of insoluble gas trapped by a silicon melt is disclosed. Polycrystalline silicon is charged to a crucible in a crystal pulling apparatus and the apparatus sealed and evacuated. After evacuation, the crystal pulling apparatus is backfilled at least once with a gas having a high solubility in silicon, such as nitrogen. The highly soluble gas fills in cavities between the polycrystalline silicon pieces and between the pieces and the crucible such that when the silicon is melted and bubbles form in the molten silicon the bubbles will solubilize into the melt instead of becoming entrapped in the growing crystal.
摘要翻译：公开了一种控制由硅熔体捕获的不溶性气体的量的方法。将多晶硅加入到拉晶装置中的坩埚中，并将该装置密封并抽真空。抽真空后，使用具有高溶解度的气体（例如氮气）将晶体牵引装置回填至少一次。高溶解性气体填充多晶硅片之间和片与坩埚之间的空腔，使得当硅熔化并在熔融硅中形成气泡时，气泡将溶解到熔体中，而不会被截留在生长晶体中。

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