专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07291222B2 Systems and methods for measuring and reducing dust in granular material 有权
标题翻译：用于测量和减少颗粒材料中灰尘的系统和方法
公开(公告)号：US07291222B2
公开(公告)日：2007-11-06
申请号：US10930654
申请日：2004-08-31
申请人： John D. Holder , Hariprasad Sreedharamurthy , John D. Hilker
发明人： John D. Holder , Hariprasad Sreedharamurthy , John D. Hilker
IPC分类号： C30B15/02
CPC分类号： B07B4/04 , C01B33/027 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.
摘要翻译：本发明涉及用于测量和减少颗粒状多晶硅中的粉尘的装置和方法。一方面，系统包括具有用于从多晶硅拉出灰尘的真空端口的处理容器。本发明的另一个系统包括用于接收多晶硅流的挡板管。测量系统包括用于分离和测量多晶硅流中的灰尘的歧管和过滤器。本发明还涉及使用该系统，制造和包装颗粒状多晶硅的方法以及颗粒状多晶硅供应的方法。

2. 发明授权

US06284040B1 Process of stacking and melting polycrystalline silicon for high quality single crystal production 失效
标题翻译：多晶硅堆垛和熔化工艺为高品质单晶生产
公开(公告)号：US06284040B1
公开(公告)日：2001-09-04
申请号：US09229540
申请日：1999-01-13
申请人： John D. Holder , Hariprasad Sreedharamurthy
发明人： John D. Holder , Hariprasad Sreedharamurthy
IPC分类号： C30B1500
CPC分类号： C30B15/02
摘要： An improved process for forming a single crystal silicon ingot from solid, varying sized chunks of polycrystalline silicon source material according to the Czochralski method. The process includes classifying each chunk of source material by size, placing chunks of source material into a crucible to form a stack in the crucible. The chunks are generally placed within at least three regions of the crucible that are pre-selected according to the size classifications of the chunks. The stack within the crucible is melted in an inert environment at an elevated temperature to form a source melt, and the temperature of the crucible and the source melt is stabilized to an equilibrium level suitable for crystal growth. The single crystal silicon ingot is pulled from the source melt according to the Czochralski method. In another aspect, the step of melting the stack is taken while the crucible has an ambient pressure that is greater than an ambient pressure when the step of stabilizing the temperature is taken.
摘要翻译：根据Czochralski方法从固体不同大小的多晶硅源材料块形成单晶硅锭的改进方法。该过程包括按照大小对每个源材料块进行分类，将源材料块放入坩埚中以在坩埚中形成堆叠。这些块通常放置在坩埚的至少三个区域中，这些区域根据块的尺寸分类被预先选择。坩埚内的叠层在高温下在惰性环境中熔融，形成源熔体，坩埚和源熔体的温度稳定在适合于晶体生长的平衡水平。根据Czochralski法将单晶硅锭从源熔体中拉出。另一方面，当采用稳定温度的步骤时，在坩埚具有大于环境压力的环境压力的同时，采取熔化堆叠的步骤。

3. 发明授权

US06589332B1 Method and system for measuring polycrystalline chunk size and distribution in the charge of a Czochralski process 失效
标题翻译：测量多晶块尺寸和分布在Czochralski工艺中的方法和系统
公开(公告)号：US06589332B1
公开(公告)日：2003-07-08
申请号：US09419151
申请日：1999-10-15
申请人： John D. Holder , Steven Joslin , Hariprasad Sreedharamurthy , John Lhamon
发明人： John D. Holder , Steven Joslin , Hariprasad Sreedharamurthy , John Lhamon
IPC分类号： C30B1500
CPC分类号： C30B15/02 , G01N15/0227
摘要： A method and system for determining polycrystalline silicon chunk size for use with a Czochralski silicon growing process. Polycrystalline silicon chunks are arranged on a measuring background. A camera captures an image of the chunks. An image processor processes the image and determines the dimensions of the chunks based on the captured image. A size parameter associated with the chunks is determined.
摘要翻译：用于确定与切克劳斯基硅生长工艺一起使用的多晶硅块尺寸的方法和系统。多晶硅块布置在测量背景上。相机拍摄大块图像。图像处理器处理图像并基于捕获的图像确定块的尺寸。确定与块相关联的尺寸参数。

4. 发明授权

US08398765B2 Controlling a melt-solid interface shape of a growing silicon crystal using an unbalanced magnetic field and iso-rotation 有权
标题翻译：使用不平衡磁场和等旋转控制生长中的硅晶体的熔体 - 固体界面形状
公开(公告)号：US08398765B2
公开(公告)日：2013-03-19
申请号：US12493766
申请日：2009-06-29
申请人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind Kulkarni , Richard G. Schrenker , Joseph C. Holzer , Harold W. Korb
IPC分类号： C30B15/02
CPC分类号： C30B15/305 , C30B29/06 , C30B30/04 , Y10T117/1032
摘要： A system for growing silicon crystals that facilitates controlling a shape of a melt-solid interface is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski process. The ingot is grown on a seed crystal pulled from the melt. The method includes applying an unbalanced cusped magnetic field to the melt, and rotating the ingot and the crucible in the same direction while the ingot is being pulled from the melt.
摘要翻译：描述了一种用于生长有利于控制熔体 - 固体界面的形状的硅晶体的系统。晶体生长系统包括加热的坩埚，其包括根据切克劳斯基（Czochralski）工艺生长单晶锭的半导体熔体。铸锭在从熔体拉出的晶种上生长。该方法包括向熔体施加不平衡的紧密磁场，并且在从熔体中拉出晶锭的同时使晶锭和坩埚旋转。

5. 发明授权

US06797062B2 Heat shield assembly for a crystal puller 失效
标题翻译：用于晶体拉拔器的隔热罩组件
公开(公告)号：US06797062B2
公开(公告)日：2004-09-28
申请号：US10252027
申请日：2002-09-20
申请人： Lee W. Ferry , Richard G. Schrenker , Hariprasad Sreedharamurthy
发明人： Lee W. Ferry , Richard G. Schrenker , Hariprasad Sreedharamurthy
IPC分类号： C30B3500
CPC分类号： C30B15/14 , Y10S117/90 , Y10T117/1068 , Y10T117/1072 , Y10T117/1088
摘要： A heat shield assembly is disclosed for use in a crystal puller for growing a monocrystalline ingot from molten semiconductor source material. The heat shield assembly has a central opening sized and shaped for surrounding the ingot as the ingot is pulled from the molten source material. In one aspect, the heat shield assembly includes a multi-sectioned outer shield and a multi-sectioned inner shield. The sections of at least one of the inner and outer shields may be releasably connected to one another so that, in the event a section is damaged, the sections may be separated to allow replacement with an undamaged section. In another aspect the heat shield assembly includes an upper section and a lower section extending generally downward from the upper section toward the molten material. The lower section has a height equal to at least about 33% of a height of the heat shield assembly.
摘要翻译：公开了一种用于晶体拉出器中用于从熔融半导体源材料生长单晶锭的隔热组件。隔热组件具有中心开口，该中心开口的大小和形状用于在铸锭从熔融源材料中拉出时包围锭块。一方面，隔热罩组件包括多段外护罩和多分段内护罩。内屏蔽件和外屏蔽件中的至少一个的部分可以可释放地彼此连接，使得在部件损坏的情况下，这些部件可以被分离以允许用未损坏的部分进行更换。在另一方面，隔热组件包括从上部向熔融材料大体向下延伸的上部和下部。下部的高度等于隔热组件的高度的至少约33％。

6. 发明申请

US20120285373A1 Feed Tool For Shielding A Portion Of A Crystal Puller 有权
标题翻译：用于屏蔽一部分水晶拉拔器的进给工具
公开(公告)号：US20120285373A1
公开(公告)日：2012-11-15
申请号：US13103554
申请日：2011-05-09
申请人： Benjamin Michael Meyer , Hariprasad Sreedharamurthy , Steven Lawrence Kimbel
发明人： Benjamin Michael Meyer , Hariprasad Sreedharamurthy , Steven Lawrence Kimbel
IPC分类号： C30B15/30 , C30B15/10
CPC分类号： C30B15/00 , C30B15/02 , C30B15/14 , C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068
摘要： A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.
摘要翻译：本文公开了用于熔化硅并形成单晶锭的晶体拉出器和用于在晶体拉出器的充电期间屏蔽一部分晶体拉出器的馈电工具。晶体拉出器包括用于容纳熔融硅的坩埚。进给工具包括圆筒和板。气缸具有形成在内表面的一部分中的内表面和环形凸缘。圆柱体在环形凸缘处具有小于内表面处圆柱体的直径的直径。板被定位在环形凸缘上，并且包括与第二部分分开的第一部分。第一部分和第二部分可操作以相对于彼此横向移动。该板具有形成在第一部分和第二部分中的至少一个中的中心开口。

7. 发明申请

US20050279277A1 Systems and methods for measuring and reducing dust in granular material 有权
标题翻译：用于测量和减少颗粒材料中灰尘的系统和方法
公开(公告)号：US20050279277A1
公开(公告)日：2005-12-22
申请号：US10930654
申请日：2004-08-31
申请人： John Holder , Hariprasad Sreedharamurthy , John Hilker
发明人： John Holder , Hariprasad Sreedharamurthy , John Hilker
IPC分类号： C01B33/027 , C30B15/00 , C30B21/06 , C30B30/04
CPC分类号： B07B4/04 , C01B33/027 , Y10T117/1032 , Y10T117/1052 , Y10T117/1056 , Y10T117/1068
摘要： The invention is directed to apparatus and methods for measuring and for reducing dust in granular polysilicon. In one aspect, a system includes a process vessel having a vacuum port for pulling dust from the polysilicon. Another system of the invention includes a baffle tube for receiving a polysilicon flow. A measuring system includes a manifold and filter for separating and measuring the dust from a flow of polysilicon. The invention is also directed to methods of using the systems, to methods of manufacturing and packaging granular polysilicon, and to a supply of granular polysilicon.
摘要翻译：本发明涉及用于测量和减少颗粒状多晶硅中的粉尘的装置和方法。一方面，系统包括具有用于从多晶硅拉出灰尘的真空端口的处理容器。本发明的另一个系统包括用于接收多晶硅流的挡板管。测量系统包括用于分离和测量多晶硅流中的灰尘的歧管和过滤器。本发明还涉及使用该系统，制造和包装颗粒状多晶硅的方法以及颗粒状多晶硅供应的方法。

8. 发明授权

US08691013B2 Feed tool for shielding a portion of a crystal puller 有权
标题翻译：用于屏蔽一部分晶体拉出器的进给工具
公开(公告)号：US08691013B2
公开(公告)日：2014-04-08
申请号：US13103554
申请日：2011-05-09
申请人： Benjamin Michael Meyer , Hariprasad Sreedharamurthy , Steven Lawrence Kimbel
发明人： Benjamin Michael Meyer , Hariprasad Sreedharamurthy , Steven Lawrence Kimbel
IPC分类号： C30B15/14 , C30B15/00 , C30B15/20 , C30B15/02
CPC分类号： C30B15/00 , C30B15/02 , C30B15/14 , C30B15/20 , C30B29/06 , Y10T117/10 , Y10T117/1016 , Y10T117/1024 , Y10T117/1032 , Y10T117/1056 , Y10T117/1068
摘要： A crystal puller for melting silicon and forming a single crystal ingot and a feed tool for shielding a portion of the crystal puller during charging of the crystal puller are disclosed herein. The crystal puller includes a crucible for containing molten silicon. The feed tool includes a cylinder and a plate. The cylinder has an inner surface and an annular ledge formed in a portion of the inner surface. The cylinder has a diameter at the annular ledge that is less than a diameter of the cylinder at the inner surface. The plate is positioned on the annular ledge and includes a first section separate from a second section. The first section and the second section are operable to move laterally with respect to each other. The plate has a central opening formed in at least one of the first section and the second section.
摘要翻译：本文公开了用于熔化硅并形成单晶锭的晶体拉出器和用于在晶体拉出器的充电期间屏蔽一部分晶体拉出器的馈电工具。晶体拉出器包括用于容纳熔融硅的坩埚。进给工具包括圆筒和板。气缸具有形成在内表面的一部分中的内表面和环形凸缘。圆柱体在环形凸缘处具有小于内表面处圆柱体的直径的直径。板被定位在环形凸缘上，并且包括与第二部分分开的第一部分。第一部分和第二部分可操作以相对于彼此横向移动。该板具有形成在第一部分和第二部分中的至少一个中的中心开口。

9. 发明授权

US08551247B2 Generating a pumping force in a silicon melt by applying a time-varying magnetic field 有权
标题翻译：通过施加时变磁场在硅熔体中产生泵送力
公开(公告)号：US08551247B2
公开(公告)日：2013-10-08
申请号：US12537066
申请日：2009-08-06
申请人： Hariprasad Sreedharamurthy , Milind Kulkarni , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind Kulkarni , Harold W. Korb
IPC分类号： C30B30/04
CPC分类号： C30B15/305 , C30B29/06
摘要： Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.
摘要翻译：描述了在晶体生长系统中控制晶体生长。晶体生长系统包括加热的坩埚，其包括半导体熔体，根据Czochralski从其中生长单晶锭，并且该晶锭在从熔体拉出的晶种上生长。该方法包括通过向上部线圈提供第一直流电流（IUDC）并向下部线圈提供第二直流电流（ILDC），向熔体施加一个定位的磁场。该方法还包括向上部线圈提供第一交流电流（IUAC）并且向下部线圈提供第二交流电流（ILAC）以产生时变磁场，其中时变磁场产生泵送力半导体熔化。

10. 发明申请

US20100031870A1 GENERATING A PUMPING FORCE IN A SILICON MELT BY APPLYING A TIME-VARYING MAGNETIC FIELD 有权
标题翻译：通过应用时变磁场在硅胶中产生泵送力
公开(公告)号：US20100031870A1
公开(公告)日：2010-02-11
申请号：US12537066
申请日：2009-08-06
申请人： Hariprasad Sreedharamurthy , Milind Kulkarni , Harold W. Korb
发明人： Hariprasad Sreedharamurthy , Milind Kulkarni , Harold W. Korb
IPC分类号： C30B15/20
CPC分类号： C30B15/305 , C30B29/06
摘要： Controlling crystal growth in a crystal growing system is described. The crystal growing system includes a heated crucible including a semiconductor melt from which a monocrystalline ingot is grown according to a Czochralski and the ingot is grown on a seed crystal pulled from the melt. The method includes applying a cusped magnetic field to the melt by supplying an upper coil with a first direct current (IUDC) and supplying a lower coil with a second direct current (ILDC). The method also includes supplying the upper coil with a first alternating current (IUAC) and supplying the lower coil with a second alternating current (ILAC) to generate a time-varying magnetic field, wherein the time-varying magnetic field generates a pumping force in the semiconductor melt.
摘要翻译：描述了在晶体生长系统中控制晶体生长。晶体生长系统包括加热的坩埚，其包括半导体熔体，根据Czochralski从其中生长单晶锭，并且该晶锭在从熔体拉出的晶种上生长。该方法包括通过向上部线圈提供第一直流电流（IUDC）并向下部线圈提供第二直流电流（ILDC），向熔体施加一个定位的磁场。该方法还包括向上部线圈提供第一交流电流（IUAC）并且向下部线圈提供第二交流电流（ILAC）以产生时变磁场，其中时变磁场产生泵送力半导体熔化。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式