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1. 发明授权

US4642143A Method of making a double heterostructure laser 失效
标题翻译：制造双异质结激光的方法
公开(公告)号：US4642143A
公开(公告)日：1987-02-10
申请号：US771357
申请日：1985-08-30
申请人： John C. Connolly , Dan Botez
发明人： John C. Connolly , Dan Botez
IPC分类号： H01S5/223 , H01L21/208
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237 , Y10S438/978
摘要： A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction. The invention also includes a method of fabricating this laser which includes the steps of forming a plurality of corrugations in the surface of the substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the corrugations and forming mesas therebetween. Growth over the corrugations is delayed thereby providing a planar surface of the first layer over a central portion of the channelled region which is non-planar with respect to the surface of the layer over the remainder of the substrate. The trough thus formed by the delayed growth over the channelled region provides a curved surface upon which the remaining layers of the laser are then sequentially deposited.
摘要翻译：一种半导体激光器，包括在其表面上具有多个紧密间隔的通道的基板，其中台面分隔通道以在基板的表面中形成通道区域。第一包覆层覆盖衬底的表面和通道，并且在通道区域上具有与该层的表面在周围衬底上不共面的表面层。包括引导层和有源层的空腔区域覆盖在第一覆层上，第二覆层覆盖有源层。有源层和导向层在横向方向上的厚度逐渐变细。本发明还包括一种制造该激光器的方法，该方法包括以下步骤：在衬底的表面形成多个波纹，形成具有用于平面和凹面的超饱和生长条件的溶液和用于凸面，使波纹表面与溶液接触，从而部分地熔化波纹的凸部并在其间形成台面。波纹上的生长被延迟，从而在通道区域的中心部分上提供第一层的平坦表面，该平坦表面在衬底的其余部分上相对于层的表面是非平面的。通过在通道区域上的延迟生长形成的槽提供弯曲表面，然后依次沉积激光器的剩余层。

2. 发明授权

US4569054A Double heterostructure laser 失效
标题翻译：双异质结激光
公开(公告)号：US4569054A
公开(公告)日：1986-02-04
申请号：US505485
申请日：1983-06-17
申请人： John C. Connolly , Dan Botez
发明人： John C. Connolly , Dan Botez
IPC分类号： H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237
摘要： A semiconductor laser comprising a substrate having a plurality of closely spaced channels in the surface thereof with mesas separating the channels to form a channelled region in the surface of the substrate. A first cladding layer overlies the surface of the substrate and the channels and has a surface layer over the channelled region which is not coplanar with the surface of this layer over the surrounding substrate. A cavity region comprising a guide layer and an active layer overlies the first cladding layer and a second cladding layer overlies the active layer. The active layer and guide layer taper in thickness in the lateral direction. The invention also includes a method of fabricating this laser which includes the steps of forming a plurality of corrugations in the surface of the substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the corrugations and forming mesas therebetween. Growth over the corrugations is delayed thereby providing a planar surface of the first layer over a central portion of the channelled region which is non-planar with respect to the surface of the layer over the remainder of the substrate. The trough thus formed by the delayed growth over the channelled region provides a curved surface upon which the remaining layers of the laser are then sequentially deposited.
摘要翻译：一种半导体激光器，包括在其表面上具有多个紧密间隔的通道的基板，其中台面分隔通道以在基板的表面中形成通道区域。第一包覆层覆盖衬底的表面和通道，并且在通道区域上具有与该层的表面在周围衬底上不共面的表面层。包括引导层和有源层的空腔区域覆盖在第一覆层上，第二覆层覆盖有源层。有源层和导向层在横向方向上的厚度逐渐变细。本发明还包括一种制造该激光器的方法，该方法包括以下步骤：在衬底的表面形成多个波纹，形成具有用于平面和凹面的超饱和生长条件的溶液和用于凸面，使波纹表面与溶液接触，从而部分地熔化波纹的凸部并在其间形成台面。波纹上的生长被延迟，从而在通道区域的中心部分上提供第一层的平坦表面，该平坦表面在衬底的其余部分上相对于层的表面是非平面的。通过在通道区域上的延迟生长形成的槽提供弯曲表面，然后依次沉积激光器的剩余层。

3. 发明授权

US4523318A Semiconductor laser having high manufacturing yield 失效
标题翻译：具有制造成品率高的半导体激光器
公开(公告)号：US4523318A
公开(公告)日：1985-06-11
申请号：US437840
申请日：1982-10-29
申请人： John C. Connolly , Dan Botez
发明人： John C. Connolly , Dan Botez
IPC分类号： H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234
摘要： A semiconductor laser wherein the major surface of a substrate having a pair of channels therein is misoriented from a member of the {100} family of crystallographic planes by a tilt angle between about 0.2.degree. and 1.5.degree.. The misorientation angle of the substrate surface with respect to the axis of the channels is between about 5.degree. and 45.degree..
摘要翻译：半导体激光器，其中具有一对通道的基板的主表面在{100}晶面平面的构件中以约0.2°至1.5°之间的倾斜角偏离。基体表面相对于通道轴线的取向角为约5°至45°。

4. 发明授权

US4461008A Terraced heterostructure semiconductor laser 失效
标题翻译：梯形异质结构半导体激光器
公开(公告)号：US4461008A
公开(公告)日：1984-07-17
申请号：US367212
申请日：1982-04-09
申请人： John C. Connolly , Dan Botez
发明人： John C. Connolly , Dan Botez
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S3/19
CPC分类号： H01S5/2232 , H01S5/2234 , H01S5/2237 , H01S5/2238
摘要： A semiconductor laser comprising a substrate with a pair of grooves in the surface thereof and a first confinement layer which overlies the surface of the substrate and has a terrace in its surface. An active layer overlies the surface of the first confinement layer and has a portion of maximum thickness and its recombination region over the concave portion of the terrace in the first confinement layer. A weak asymmetric positive index optical guide is thus formed which supports only the fundamental lateral optical mode.
摘要翻译：一种半导体激光器，包括在其表面上具有一对凹槽的基底和位于基底表面上并在其表面上具有露台的第一限制层。活性层覆盖在第一限制层的表面上并且具有最大厚度的一部分，并且其复合区域位于第一限制层中的露台的凹部上。因此形成了仅支持基本横向光学模式的弱不对称正折射率光导。

5. 发明授权

US4547396A Method of making a laser array 失效
标题翻译：制作激光阵列的方法
公开(公告)号：US4547396A
公开(公告)日：1985-10-15
申请号：US665538
申请日：1984-10-26
申请人： Dan Botez , John C. Connolly
发明人： Dan Botez , John C. Connolly
IPC分类号： H01L33/00 , H01L33/08 , H01L33/24 , H01S5/223 , H01S5/24 , H01S5/40 , H01L21/208
CPC分类号： H01L33/24 , H01L33/0062 , H01L33/08 , H01S5/4031 , H01S5/2234 , H01S5/2237 , H01S5/24
摘要： A phase-locked laser array including a plurality of closely spaced channels in the surface of the substrate with lands therebetween with the laser oscillation occurring in a cavity region over each of the channels. A broad-area electrical contact provides uniform electrical current flow to each of the lasing regions. The individual oscillators are coupled by the overlap of their evanescent optical fields. The invention also includes a method of fabricating this array which includes the steps of forming a plurality of corrugations in the surface of a substrate, forming a solution having a super-saturated growth condition for planar and concave surfaces and an under-saturated growth condition for convex surfaces, contacting the corrugated surface to the solution thereby partially melting the convex portions of the surface and forming planar lands between the concave portions of the corrugations. Growth over the lands is delayed thereby providing a planar surface of the first layer upon which the remaining layers are then sequentially deposited.
摘要翻译：一种锁相激光器阵列，其在衬底的表面中包括多个紧密间隔的通道，其间具有激光振荡，其中激光振荡发生在每个通道上的空腔区域中。广泛的电接触提供均匀的电流流向每个激光区域。各个振荡器通过其消逝的光场的重叠耦合。本发明还包括一种制造该阵列的方法，其包括在衬底的表面中形成多个波纹的步骤，形成具有用于平面和凹面的超饱和生长条件的溶液和用于凸面，使波纹表面与溶液接触，从而部分地熔化表面的凸起部分，并在波纹的凹部之间形成平坦的平坦区域。延长了土地上的生长，从而提供第一层的平坦表面，然后依次沉积剩余的层。

6. 发明授权

US08848754B2 Multiquantum well structures for suppression of electron leakage and reduction of threshold-current density in quantum cascade lasers 有权
标题翻译：用于抑制电子泄漏的多量子阱结构和量子级联激光器中阈值电流密度的降低
公开(公告)号：US08848754B2
公开(公告)日：2014-09-30
申请号：US13591645
申请日：2012-08-22
申请人： Dan Botez , Jae Cheol Shin
发明人： Dan Botez , Jae Cheol Shin
IPC分类号： H01S5/00 , H01S5/34 , H01S5/20 , H01S5/32
CPC分类号： H01S5/2009 , B82Y20/00 , H01S5/00 , H01S5/20 , H01S5/2013 , H01S5/3216 , H01S5/34 , H01S5/3402 , H01S5/3407 , H01S5/3412 , H01S5/3413 , H01S5/3418 , H01S5/3425
摘要： Semiconductor structures for laser devices are provided. The semiconductor structures have a quantum cascade laser structure comprising an electron injector, an active region, and an electron extractor. The active region comprises an injection barrier, a multiquantum well structure, and an exit barrier. The multiquantum well structure can comprise a first barrier, a first quantum well, a second barrier, a second quantum well, and a third barrier. The energies of the first and second barrier are less than the energy of the third barrier. The energy difference between the energy of the second barrier and the energy of the third barrier can be greater than 150 meV and the ratio of the energy of the third barrier to the energy of the second barrier can be greater than 1.26.
摘要翻译：提供了激光器件的半导体结构。半导体结构具有包括电子注入器，有源区和电子提取器的量子级联激光器结构。活性区域包括注入阻挡层，多量子阱结构和出口屏障。多量子阱结构可以包括第一势垒，第一量子阱，第二势垒，第二量子阱和第三势垒。第一和第二屏障的能量小于第三屏障的能量。第二阻挡层的能量与第三阻挡层的能量之间的能量差可以大于150meV，并且第三阻挡层的能量与第二阻挡层的能量的比率可以大于1.26。

7. 发明申请

US20140037258A1 FABRICATION OF LOW-LOSS, LIGHT-WAVEGUIDING, ORIENTATION-PATTERNED SEMICONDUCTOR STRUCTURES 有权
标题翻译：低损耗，轻微波动，方位图形半导体结构的制造
公开(公告)号：US20140037258A1
公开(公告)日：2014-02-06
申请号：US13562560
申请日：2012-07-31
申请人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
发明人： Dan Botez , Thomas F. Kuech , Luke J. Mawst , Steven Christopher Ruder
IPC分类号： C30B25/04 , G02B6/10
CPC分类号： G02B6/122 , C30B25/04 , C30B29/403 , C30B29/42 , C30B29/44 , G02B2006/12035 , G02B2006/12097
摘要： Methods for the fabrication of orientation-patterned semiconductor structures are provided. The structures are light-waveguiding structures for nonlinear frequency conversion. The structures are periodically poled semiconductor heterostructures comprising a series of material domains disposed in a periodically alternating arrangement along the optical propagation axis of the waveguide. The methods of fabricating the orientation-patterned structures utilize a series of surface planarization steps at intermediate stages of the heterostructure growth process to provide interlayer interfaces having extremely low roughnesses.
摘要翻译：提供了制造取向图案化半导体结构的方法。该结构是用于非线性频率转换的光波导结构。这些结构是周期性极化的半导体异质结构，其包括沿波导的光传播轴定期交替布置的一系列材料畴。制造取向图案化结构的方法利用在异质结构生长过程的中间阶段的一系列表面平面化步骤，以提供具有极低粗糙度的层间界面。

8. 发明授权

US08259767B2 High-power quantum cascade lasers with active-photonic-crystal structure 有权
标题翻译：具有有源光子晶体结构的大功率量子级联激光器
公开(公告)号：US08259767B2
公开(公告)日：2012-09-04
申请号：US12639178
申请日：2009-12-16
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S3/04 , H01S5/00 , H01L21/00 , H01L21/76
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外（即4-12μm）辐射的半导体激光阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件由激光阵列器件中的元件区域分开的区域。

9. 发明申请

US20120201263A1 HIGH-POWER QUANTUM CASCADE LASERS WITH ACTIVE-PHOTONIC-CRYSTAL STRUCTURE 有权
标题翻译：具有活性光子晶体结构的大功率量子级激光器
公开(公告)号：US20120201263A1
公开(公告)日：2012-08-09
申请号：US12639178
申请日：2009-12-16
申请人： Dan Botez , Luke J. Mawst
发明人： Dan Botez , Luke J. Mawst
IPC分类号： H01S5/34 , H01L33/06
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/02461 , H01S5/2224 , H01S5/3213 , H01S5/4031 , H01S5/4081
摘要： Semiconductor laser array devices capable of emitting mid- to long-wavelength infrared (i.e., 4-12 μm) radiation are provided. The devices include a quantum cascade laser (QCL) structure comprising one or more active cores; an optical confinement structure; a cladding structure; and a plurality of laterally-spaced trench regions extending transversely through the optical confinement and cladding structures, and partially into the QCL structure. The trench regions, each of which comprises a lower trench layer comprising a semi-insulating material and an upper trench layer comprising a material having a refractive index that is higher than that of the semi-insulating material, define a plurality of laterally-spaced interelement regions separated by element regions in the laser array device.
摘要翻译：提供能够发射中长波长红外线（即4-12μm）辐射的半导体激光器阵列器件。这些装置包括包含一个或多个活性核心的量子级联激光器（QCL）结构; 光学限制结构; 包层结构; 以及横向间隔开的横向间隔的沟槽区域，横向延伸通过光学限制和包层结构，并且部分地延伸到QCL结构中。每个沟槽区域包括包含半绝缘材料的下沟槽层和包括折射率高于半绝缘材料的折射率的材料的上沟槽层限定了多个横向间隔开的元件由激光阵列器件中的元件区域分开的区域。

10. 发明申请

US20090022196A1 HIGH EFFICIENCY INTERSUBBAND SEMICONDUCTOR LASERS 有权
标题翻译：高效率的半导体激光器
公开(公告)号：US20090022196A1
公开(公告)日：2009-01-22
申请号：US12140414
申请日：2008-06-17
申请人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
发明人： Dan Botez , Dapeng P. Xu , Luke J. Mawst
IPC分类号： H01S5/343 , H01S5/34
CPC分类号： H01S5/3402 , B82Y20/00 , H01S5/3406 , H01S5/3407 , Y10S977/951
摘要： An intersubband quantum cascade laser structure includes multiple coupled laser stages, wherein each stage has a multilayer structure including an electron injector, an active region with at least one quantum well, and an electron reflector. Electrons injected from the injector into the active region at a high energy level relax to a lower energy level with the emission of a photon at, for example, mid-infrared wavelengths. The reflector reflects electrons at the higher energy level at which they were injected and transmits electrons from the lower energy level after emission of a photon. Multiple layers of semiconductor are formed on each side of the multistage structure to provide conduction across the device and to provide optical confinement of the photons emitted.
摘要翻译：子带间量子级联激光器结构包括多个耦合激光器级，其中每个级具有包括电子注入器，具有至少一个量子阱的有源区和电子反射器的多层结构。在高能量水平下从注射器注入有源区域的电子以例如中红外波长的光子发射而放松到较低的能级。反射器反射在它们被注入的较高能级的电子，并且在发射光子之后从较低的能级发射电子。在多级结构的每一侧上形成多层半导体以提供穿过该器件的导电并提供所发射的光子的光学限制。

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