专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20110309269A1 Photonic Generator of Ultra-Wide Band Millimeter Wave 有权
标题翻译：超宽带毫米波光子发生器
公开(公告)号：US20110309269A1
公开(公告)日：2011-12-22
申请号：US12949012
申请日：2010-11-18
申请人： Jin-Wei Shi , Tzi-hong Chiueh , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai , Hsiao-Feng Teng
发明人： Jin-Wei Shi , Tzi-hong Chiueh , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai , Hsiao-Feng Teng
IPC分类号： H01S3/10
CPC分类号： G02F2/002
摘要： A photonic generator is provided. The photonic generator uses ultra-wide band millimeter wave (MMW) for generating a high-power ultra-broad band white noise. Thus, the present disclosure can be used for failure detection of instantaneous all-band device, noise detection of instantaneous all-band amplifier and mixer, wide-band cipher transmission, pseudo-random bit generation, ADC dithering of analog-digital converter, saturation power test of wide-band optical communicator, system noise detection of MMW receiver, and gain and phase detection of MMW interferometer.
摘要翻译：提供光子发生器。光子发生器使用超宽带毫米波（MMW）产生大功率超宽带白噪声。因此，本公开可以用于瞬时全频带设备的故障检测，瞬时全频带放大器和混频器的噪声检测，宽带密码传输，伪随机位产生，模数转换器的ADC抖动，饱和度宽带光通信器的功率测试，MMW接收机的系统噪声检测，以及MMW干涉仪的增益和相位检测。

2. 发明授权

US08483578B2 Photonic generator of ultra-wide band millimeter wave 有权
标题翻译：超宽带毫米波光子发生器
公开(公告)号：US08483578B2
公开(公告)日：2013-07-09
申请号：US12949012
申请日：2010-11-18
申请人： Jin-Wei Shi , Tzi-hong Chiueh , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai , Hsiao-Feng Teng
发明人： Jin-Wei Shi , Tzi-hong Chiueh , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai , Hsiao-Feng Teng
IPC分类号： H04B10/04 , H04B10/00
CPC分类号： G02F2/002
摘要： A photonic generator is provided. The photonic generator uses ultra-wide band millimeter wave (MMW) for generating a high-power ultra-broad band white noise. Thus, the present disclosure can be used for failure detection of instantaneous all-band device, noise detection of instantaneous all-band amplifier and mixer, wide-band cipher transmission, pseudo-random bit generation, ADC dithering of analog-digital converter, saturation power test of wide-band optical communicator, system noise detection of MMW receiver, and gain and phase detection of MMW interferometer.
摘要翻译：提供光子发生器。光子发生器使用超宽带毫米波（MMW）产生大功率超宽带白噪声。因此，本公开可以用于瞬时全频带设备的故障检测，瞬时全频带放大器和混频器的噪声检测，宽带密码传输，伪随机位产生，模数转换器的ADC抖动，饱和度宽带光通信器的功率测试，MMW接收机的系统噪声检测，以及MMW干涉仪的增益和相位检测。

3. 发明授权

US08306428B2 Optoelectronic switch transmitter using millimeter wavelength 有权
标题翻译：光电开关发射机采用毫米波长
公开(公告)号：US08306428B2
公开(公告)日：2012-11-06
申请号：US12833197
申请日：2010-07-09
申请人： Jin-Wei Shi , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai
发明人： Jin-Wei Shi , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai
IPC分类号： H04B10/00
CPC分类号： H04B1/40 , H04B2210/006
摘要： An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.
摘要翻译：提供了使用毫米波长（MMW）的光电开关。对被测器件（DUT）施加r电压脉冲，用于切换光电产生的MMW功率DUT以反向偏置运行。将具有调制MMW包络的光学光源注入到用于MMW发电的DUT上。因此，基于反向偏压的变化，速度剧烈变化，从而获得MMW光电开关。

4. 发明申请

US20110142451A1 Optoelectronic Switch Transmitter Using Millimeter Wavelength 有权
标题翻译：使用毫米波长的光电开关变送器
公开(公告)号：US20110142451A1
公开(公告)日：2011-06-16
申请号：US12833197
申请日：2010-07-09
申请人： Jin-Wei Shi , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai
发明人： Jin-Wei Shi , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai
IPC分类号： H04B10/00
CPC分类号： H04B1/40 , H04B2210/006
摘要： An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.
摘要翻译：提供了使用毫米波长（MMW）的光电开关。对被测器件（DUT）施加r电压脉冲，用于切换光电产生的MMW功率DUT以反向偏置运行。将具有调制MMW包络的光学光源注入到用于MMW发电的DUT上。因此，基于反向偏压的变化，速度剧烈变化，从而获得MMW光电开关。

5. 发明授权

US08368162B2 Laser power converter for data detection and optical-to-electrical power generation 有权
标题翻译：用于数据检测和光 - 电发电的激光功率转换器
公开(公告)号：US08368162B2
公开(公告)日：2013-02-05
申请号：US13035015
申请日：2011-02-25
申请人： Jin-Wei Shi , Feng-Ming Kuo
发明人： Jin-Wei Shi , Feng-Ming Kuo
IPC分类号： H01L31/075
CPC分类号： H01L31/105 , H01L31/02327
摘要： The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).
摘要翻译：本公开提供了一种高速激光功率转换器（LPC）。 LPC能够级联。 LPC具有甚至在正向偏置工作电压下工作的高速光电二极管（PD）性能。因此，本公开可以在使用850纳米（nm）波长的垂直腔表面发射激光器（VCSEL）的光学互连（OI）系统中在高速数据传输期间产生功率（而不是消耗功率）。

6. 发明申请

US20120153417A1 Laser Power Converter for Data Detection and Optical-to-Electrical Power Generation 有权
标题翻译：用于数据检测和光 - 电发电的激光功率转换器
公开(公告)号：US20120153417A1
公开(公告)日：2012-06-21
申请号：US13035015
申请日：2011-02-25
申请人： Jin-Wei Shi , Feng-Ming Kuo
发明人： Jin-Wei Shi , Feng-Ming Kuo
IPC分类号： H01L31/0232
CPC分类号： H01L31/105 , H01L31/02327
摘要： The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).
摘要翻译：本公开提供了一种高速激光功率转换器（LPC）。 LPC能够级联。 LPC具有甚至在正向偏置工作电压下工作的高速光电二极管（PD）性能。因此，本公开可以在使用850纳米（nm）波长的垂直腔表面发射激光器（VCSEL）的光学互连（OI）系统中在高速数据传输期间产生功率（而不是消耗功率）。

7. 发明申请

US20110309459A1 Multi-Cascaded Photodiode 有权
标题翻译：多级光电二极管
公开(公告)号：US20110309459A1
公开(公告)日：2011-12-22
申请号：US12957607
申请日：2010-12-01
申请人： Jin-Wei Shi , Feng-Ming Kuo
发明人： Jin-Wei Shi , Feng-Ming Kuo
IPC分类号： H01L27/144
CPC分类号： H01L27/1446 , G01J1/44 , H01L25/042 , H01L27/1443 , H01L31/02019 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure uses at least two cascaded photodetectors. Device area is increased to provide a bigger current than a single photodetector under the same bandwidth. Hence, bandwidth efficiency (BRP) and saturation current-bandwidth product (SCBP) are improved for a high speed, a high responsivity and a high bandwidth with simple structure and low cost.
摘要翻译：本公开使用至少两个级联的光电检测器。在相同带宽下，器件面积增加以提供比单个光电探测器更大的电流。因此，带宽效率（BRP）和饱和电流带宽乘积（SCBP）在高速度，高响应度和高带宽方面得到改进，结构简单，成本低。

8. 发明授权

US08288808B2 Multi-cascaded photodiode 有权
标题翻译：多级光电二极管
公开(公告)号：US08288808B2
公开(公告)日：2012-10-16
申请号：US12957607
申请日：2010-12-01
申请人： Jin-Wei Shi , Feng-Ming Kuo
发明人： Jin-Wei Shi , Feng-Ming Kuo
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/1446 , G01J1/44 , H01L25/042 , H01L27/1443 , H01L31/02019 , H01L2924/0002 , H01L2924/00
摘要： The present disclosure uses at least two cascaded photodetectors. Device area is increased to provide a bigger current than a single photodetector under the same bandwidth. Hence, bandwidth efficiency (BRP) and saturation current-bandwidth product (SCBP) are improved for a high speed, a high responsivity and a high bandwidth with simple structure and low cost.
摘要翻译：本公开使用至少两个级联的光电检测器。在相同带宽下，器件面积增加以提供比单个光电探测器更大的电流。因此，带宽效率（BRP）和饱和电流带宽乘积（SCBP）在高速度，高响应度和高带宽方面得到改进，结构简单，成本低。

9. 发明授权

US06759694B1 Semiconductor phototransistor 失效
标题翻译：半导体光电晶体管
公开(公告)号：US06759694B1
公开(公告)日：2004-07-06
申请号：US10718621
申请日：2003-11-24
申请人： Yu-Min Hsu , Jin-Wei Shi , Zing-Way Pei , Fon Yuan , Chee-Wee Liu
发明人： Yu-Min Hsu , Jin-Wei Shi , Zing-Way Pei , Fon Yuan , Chee-Wee Liu
IPC分类号： H01L3111
CPC分类号： H01L31/1105 , H01L31/0352
摘要： A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected to an external voltage, the holes accumulated at the junction of the base and emitter can be quickly removed. This solves the problem in the prior art that using a bias between the base and the emitter to remove holes usually results in a large dark current (bias current), power consumption, and diminishing optoelectronic conversion gain.
摘要翻译：公开了一种光电晶体管结构。侧壁在集电器侧和底部下生长。侧壁的表面形成有侧壁接触。当触点连接到外部电压时，可以快速去除在基极和发射极的结点处积累的空穴。这解决了现有技术中使用基极和发射极之间的偏置来去除空穴的问题通常导致大的暗电流（偏置电流），功耗和光电转换增益的减小。

10. 发明授权

US08541813B1 Homojunction type high-speed photodiode 有权
标题翻译：同功型高速光电二极管
公开(公告)号：US08541813B1
公开(公告)日：2013-09-24
申请号：US13549425
申请日：2012-07-14
申请人： Jin-Wei Shi , Kai-Lun Chi
发明人： Jin-Wei Shi , Kai-Lun Chi
IPC分类号： H01L21/02
CPC分类号： H01L31/103 , H01L31/065 , H01L31/105 , Y02E10/50
摘要： A homojunction type high-speed photodiode has an active area of greater than at least 50 microns (μm) or preferably greater than 60 microns (μm) in diameter, which has an p-i-n junction epitaxial layer formed on a semiconductor substrate and includes a first ohmic contact layer, an absorption layer, a collector layer and a second ohmic contact layer. No more absorbance occurs in the collector layer of InGaAs, by means of completely absorbing the photon energy in advance by the absorption layer in which the absorption layer has powerful optical absorption constant. Not only can the prior art problems be solved, such as surface absorbance, but also improved electron transport can be achieved by using InGaAs as the constructing material, compared to other materials. The resistance capacitance (RC) for the entire structure can be significantly reduced, and the limitations to the bandwidth resulted from the carrier transport time can be improved.
摘要翻译：同质结型高速光电二极管具有直径大于至少50微米（mum）或优选大于60微米（mum）的有效面积，其具有形成在半导体衬底上的pin结外延层，并且包括第一欧姆接触层，吸收层，集电极层和第二欧姆接触层。通过吸收层具有强大的光吸收常数的吸收层预先完全吸收光子能量，在InGaAs的集电极层中不再发生吸光度。与其他材料相比，不仅可以解决现有技术问题，例如表面吸光度，而且可以通过使用InGaAs作为构造材料来实现改进的电子传输。可以显着降低整个结构的电阻电容（RC），并且可以提高载波传输时间带宽的限制。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式