专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07674642B2 Method of fabricating linear cascade high-speed green light emitting diode 有权
标题翻译：制造线性级联高速绿色发光二极管的方法
公开(公告)号：US07674642B2
公开(公告)日：2010-03-09
申请号：US11984335
申请日：2007-11-16
申请人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , Cheng-Hiong Chen , Jen-Inn Chyi
发明人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , Cheng-Hiong Chen , Jen-Inn Chyi
IPC分类号： H01L21/00
CPC分类号： H01L27/153 , H01L33/025 , H01L33/32
摘要： Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.
摘要翻译：砷化镓（GaAs）的绿色发光二极管（LED）串联连接。串联连接具有较小的传输衰减和宽带宽。 GaAs LED具有很大的正向偏压，因此不需要额外的驱动电流和复杂的谐振腔外延层。因此，本发明具有高速度，高效率和高功率，同时避免了不均匀的电流分布。

2. 发明申请

US20080274573A1 Method of fabricating linear cascade high-speed green light emitting diode 有权
标题翻译：制造线性级联高速绿色发光二极管的方法
公开(公告)号：US20080274573A1
公开(公告)日：2008-11-06
申请号：US11984335
申请日：2007-11-16
申请人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , C.-H. Chen , Jen-Inn Chyi
发明人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , C.-H. Chen , Jen-Inn Chyi
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/025 , H01L33/32
摘要： Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.
摘要翻译：砷化镓（GaAs）的绿色发光二极管（LED）串联连接。串联连接具有较小的传输衰减和宽带宽。 GaAs LED具有很大的正向偏压，因此不需要额外的驱动电流和复杂的谐振腔外延层。因此，本发明具有高速度，高效率和高功率，同时避免了不均匀的电流分布。

3. 发明授权

US07271418B2 Semiconductor apparatus for white light generation and amplification 有权
标题翻译：用于白光发生和放大的半导体装置
公开(公告)号：US07271418B2
公开(公告)日：2007-09-18
申请号：US10948215
申请日：2004-09-24
申请人： Jin-Wei Shi , Jinn-Kong Sheu
发明人： Jin-Wei Shi , Jinn-Kong Sheu
IPC分类号： H01L27/15 , H01L31/12 , H01L31/153 , H01L33/00
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0424 , H01S5/2206 , H01S5/3095 , H01S5/34333
摘要： The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.
摘要翻译：本发明是一种用于白光发生和放大的半导体装置，其中在不同的电流偏压下，通过折叠多波长量子阱并通过侧注射电流可以稳定和均匀地产生白光。而且，白光可以以电子方式激发而不与荧光粉混合，从而降低了密封成本。由于光被电力直接激发以防止在荧光变换期间的能量损失，所以本发明的发光效率远远大于与白光发光二极管混合的传统磷的发光效率。此外，关于白光的特性，白光的光谱可以通过调整量子阱的结构和/或数量同时防止受到荧光粉的原子发射线的限制而实现。

4. 发明申请

US20060065886A1 Semiconductor apparatus for white light generation and amplification 有权
标题翻译：用于白光发生和放大的半导体装置
公开(公告)号：US20060065886A1
公开(公告)日：2006-03-30
申请号：US10948215
申请日：2004-09-24
申请人： Jin-Wei Shi , Jinn-Kong Sheu
发明人： Jin-Wei Shi , Jinn-Kong Sheu
IPC分类号： H01L29/06
CPC分类号： H01S5/227 , B82Y20/00 , H01L33/08 , H01L33/32 , H01S5/0424 , H01S5/2206 , H01S5/3095 , H01S5/34333
摘要： The present invention is a semiconductor apparatus for white light generation and amplification, where, under different current bias, white light can be generated steadily and evenly by folding up multi-wavelength quantum wells and by side-injecting a current. And, the white light can be excited out electronically without mingling with a fluorescent powder so that the cost for sealing is reduced. Because the light is directly excited out by electricity to prevent from energy loss during fluorescence transformation, the light generation efficiency of the present invention is far greater than that of the traditional phosphorus mingled with light-emitting diode of white light. Besides, concerning the characteristics of the white light, the spectrum of the white light can be achieved by adjusting the structure and/or the number of the quantum wells while preventing from being limited by the atomic emission lines of the fluorescent powder.
摘要翻译：本发明是一种用于白光发生和放大的半导体装置，其中在不同的电流偏压下，通过折叠多波长量子阱并通过侧注射电流可以稳定和均匀地产生白光。而且，白光可以以电子方式激发而不与荧光粉混合，从而降低了密封成本。由于光被电力直接激发以防止在荧光变换期间的能量损失，所以本发明的发光效率远远大于与白光发光二极管混合的传统磷的发光效率。此外，关于白光的特性，白光的光谱可以通过调整量子阱的结构和/或数量同时防止受到荧光粉的原子发射线的限制而实现。

5. 发明授权

US06759694B1 Semiconductor phototransistor 失效
标题翻译：半导体光电晶体管
公开(公告)号：US06759694B1
公开(公告)日：2004-07-06
申请号：US10718621
申请日：2003-11-24
申请人： Yu-Min Hsu , Jin-Wei Shi , Zing-Way Pei , Fon Yuan , Chee-Wee Liu
发明人： Yu-Min Hsu , Jin-Wei Shi , Zing-Way Pei , Fon Yuan , Chee-Wee Liu
IPC分类号： H01L3111
CPC分类号： H01L31/1105 , H01L31/0352
摘要： A phototransistor structure is disclosed. A sidewall is grown on the collector side and under the base. The surface of the sidewall is formed with a sidewall contact. When the contact is connected to an external voltage, the holes accumulated at the junction of the base and emitter can be quickly removed. This solves the problem in the prior art that using a bias between the base and the emitter to remove holes usually results in a large dark current (bias current), power consumption, and diminishing optoelectronic conversion gain.
摘要翻译：公开了一种光电晶体管结构。侧壁在集电器侧和底部下生长。侧壁的表面形成有侧壁接触。当触点连接到外部电压时，可以快速去除在基极和发射极的结点处积累的空穴。这解决了现有技术中使用基极和发射极之间的偏置来去除空穴的问题通常导致大的暗电流（偏置电流），功耗和光电转换增益的减小。

6. 发明授权

US08541813B1 Homojunction type high-speed photodiode 有权
标题翻译：同功型高速光电二极管
公开(公告)号：US08541813B1
公开(公告)日：2013-09-24
申请号：US13549425
申请日：2012-07-14
申请人： Jin-Wei Shi , Kai-Lun Chi
发明人： Jin-Wei Shi , Kai-Lun Chi
IPC分类号： H01L21/02
CPC分类号： H01L31/103 , H01L31/065 , H01L31/105 , Y02E10/50
摘要： A homojunction type high-speed photodiode has an active area of greater than at least 50 microns (μm) or preferably greater than 60 microns (μm) in diameter, which has an p-i-n junction epitaxial layer formed on a semiconductor substrate and includes a first ohmic contact layer, an absorption layer, a collector layer and a second ohmic contact layer. No more absorbance occurs in the collector layer of InGaAs, by means of completely absorbing the photon energy in advance by the absorption layer in which the absorption layer has powerful optical absorption constant. Not only can the prior art problems be solved, such as surface absorbance, but also improved electron transport can be achieved by using InGaAs as the constructing material, compared to other materials. The resistance capacitance (RC) for the entire structure can be significantly reduced, and the limitations to the bandwidth resulted from the carrier transport time can be improved.
摘要翻译：同质结型高速光电二极管具有直径大于至少50微米（mum）或优选大于60微米（mum）的有效面积，其具有形成在半导体衬底上的pin结外延层，并且包括第一欧姆接触层，吸收层，集电极层和第二欧姆接触层。通过吸收层具有强大的光吸收常数的吸收层预先完全吸收光子能量，在InGaAs的集电极层中不再发生吸光度。与其他材料相比，不仅可以解决现有技术问题，例如表面吸光度，而且可以通过使用InGaAs作为构造材料来实现改进的电子传输。可以显着降低整个结构的电阻电容（RC），并且可以提高载波传输时间带宽的限制。

7. 发明授权

US08368162B2 Laser power converter for data detection and optical-to-electrical power generation 有权
标题翻译：用于数据检测和光 - 电发电的激光功率转换器
公开(公告)号：US08368162B2
公开(公告)日：2013-02-05
申请号：US13035015
申请日：2011-02-25
申请人： Jin-Wei Shi , Feng-Ming Kuo
发明人： Jin-Wei Shi , Feng-Ming Kuo
IPC分类号： H01L31/075
CPC分类号： H01L31/105 , H01L31/02327
摘要： The present disclosure provides a high-speed laser power converter (LPC). The LPC is able to be cascaded. The LPC has a high-speed photodiode (PD) performance even operated under a forward bias operational voltage. Thus, the present disclosure can generate power (instead of consume power) during high-speed data transmission in an optical interconnect (OI) system using 850 nano-meters (nm) wavelength vertical cavity surface-emitting laser (VCSEL).
摘要翻译：本公开提供了一种高速激光功率转换器（LPC）。 LPC能够级联。 LPC具有甚至在正向偏置工作电压下工作的高速光电二极管（PD）性能。因此，本公开可以在使用850纳米（nm）波长的垂直腔表面发射激光器（VCSEL）的光学互连（OI）系统中在高速数据传输期间产生功率（而不是消耗功率）。

8. 发明授权

US08306428B2 Optoelectronic switch transmitter using millimeter wavelength 有权
标题翻译：光电开关发射机采用毫米波长
公开(公告)号：US08306428B2
公开(公告)日：2012-11-06
申请号：US12833197
申请日：2010-07-09
申请人： Jin-Wei Shi , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai
发明人： Jin-Wei Shi , Nan-Wei Chen , Feng-Ming Kuo , Hsuan-Ju Tsai
IPC分类号： H04B10/00
CPC分类号： H04B1/40 , H04B2210/006
摘要： An optoelectronic switch using millimeter wavelength (MMW) is provided. An r voltage pulse is applied to a device under test (DUT) for switching the photo-generated MMW power The DUT is operated under reverse bias. An optical light source with modulated MMW envelop is injected on to DUT for MMW power generation. Thus, based on change of the reverse bias, speed is violently changed and the MMW optoelectronic switch is thus obtained.
摘要翻译：提供了使用毫米波长（MMW）的光电开关。对被测器件（DUT）施加r电压脉冲，用于切换光电产生的MMW功率DUT以反向偏置运行。将具有调制MMW包络的光学光源注入到用于MMW发电的DUT上。因此，基于反向偏压的变化，速度剧烈变化，从而获得MMW光电开关。

9. 发明授权

US08130809B2 Optoelectronic device having light source emitter and receiver integrated 有权
标题翻译：具有光源发射器和接收器的光电器件集成
公开(公告)号：US08130809B2
公开(公告)日：2012-03-06
申请号：US12703607
申请日：2010-02-10
申请人： Jin-Wei Shi , Fong-Ming Kuo
发明人： Jin-Wei Shi , Fong-Ming Kuo
IPC分类号： H01S5/00
CPC分类号： H01S5/0261 , H01S5/042 , H01S5/183 , H01S5/18308 , H01S5/18311
摘要： An optoelectronic device is provided. A light source emitter and a light source receiver are integrated in the device. The light source emitter is a Zn-diffused vertical cavity surface-emitting laser (VCSEL). The light source receiver is a uni-traveling-carrier photodiode (UTC-PD). With the VCSEL, a 10 Gb/s eye is opened under a small voltage and a small signal amplitude. With the UTC-PD, the 10 Gb/s eye is passed even under zero-bias. Thus, the optoelectronic device has a high speed and power consumption is saved.
摘要翻译：提供了一种光电器件。光源发射器和光源接收器集成在器件中。光源发射器是Zn扩散垂直腔表面发射激光器（VCSEL）。光源接收机是单行载波光电二极管（UTC-PD）。使用VCSEL，在小电压和小信号幅度下打开10 Gb / s眼睛。使用UTC-PD，10Gb / s眼睛即使在零偏压下也通过。因此，光电器件具有高速度并节省功耗。

10. 发明申请

US20050051861A1 Avalanche photo-detector with high saturation power and high gain-bandwidth product 失效
公开(公告)号：US20050051861A1
公开(公告)日：2005-03-10
申请号：US10720117
申请日：2003-11-25
申请人： Jin-Wei Shi , Chee-Wee Liu
发明人： Jin-Wei Shi , Chee-Wee Liu
IPC分类号： H01L31/08 , H01L31/107
CPC分类号： B82Y10/00 , H01L31/107
摘要： An avalanche photo-detector (APD) is disclosed, which can reduce device capacitance, operating voltage, carrier transport time and dark current as well as increasing response speed and output power. Thus, an avalanche photo-detector (APD) with high saturation power, high gain-bandwidth product, low noise, fast response, low dark current is achieved. The APD includes an absorption layer with graded doping for converting an incident light into carriers, an undoped multiplication layer for multiplying current by means of receiving carriers, a doped field buffer layer sandwiched between the absorption layer and the multiplication layer for concentrating an electric field in the multiplication layer when a bias voltage is applied, and an undoped drift layer sandwiched between the absorption layer and the field buffer layer for capacitance reduction.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式