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1. 发明授权

US06812072B2 Method for crystallizing amorphous film and method for fabricating LCD by using the same 有权
标题翻译：使非晶质膜结晶的方法及其制造方法
公开(公告)号：US06812072B2
公开(公告)日：2004-11-02
申请号：US10189510
申请日：2002-07-08
申请人： Jin Jang , Kyung Ho Kim , Ah Young Kim
发明人： Jin Jang , Kyung Ho Kim , Ah Young Kim
IPC分类号： H01L2100
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , H01L21/02532 , H01L21/2022 , H01L29/66757 , H01L29/78609 , H01L29/78675
摘要： A method for crystallizing an amorphous film for enhancing a crystallinity and minimizing an amount of remaining metal in a polycrystalline silicon thin film, and a method for fabricating a liquid crystal display device (LCD) by using the same. The method for crystallizing an amorphous film including forming an amorphous film on a substrate; forming a thin first metal layer; forming a second metal layer on the amorphous film at predetermined parts; and heat treating the amorphous film, for crystallizing the amorphous film.
摘要翻译：用于结晶非晶膜以提高结晶度并使多晶硅薄膜中剩余金属量最小化的方法，以及通过使用该方法制造液晶显示装置（LCD）的方法。一种非晶膜结晶方法，包括在基板上形成非晶膜; 形成薄的第一金属层; 在预定部分的非晶膜上形成第二金属层; 并对非晶膜进行热处理，以使非晶膜结晶。

2. 发明授权

US07074728B2 Method for crystallizing amorphous film and method for fabricating LCD by using the same 有权
公开(公告)号：US07074728B2
公开(公告)日：2006-07-11
申请号：US10189454
申请日：2002-07-08
申请人： Jin Jang , Kyung Ho Kim
发明人： Jin Jang , Kyung Ho Kim
IPC分类号： H01L21/26 , H01L21/326
CPC分类号： H01L21/02672 , C30B1/023 , C30B29/06 , G02F1/1368 , G02F2202/104 , H01L21/02532 , H01L21/2022 , H01L21/268
摘要： A method for crystallizing an amorphous film by using an electric field and an ultraviolet (UV) ray, and method for fabricating an LCD by using the same. The method for crystallizing an amorphous film includes forming an amorphous film having a catalytic metal deposited thereon on a substrate, irradiating a UV ray on the amorphous film, and applying an electric field to the amorphous film.

3. 发明授权

US06835608B2 Method for crystallizing amorphous film and method for fabricating LCD by using the same 有权
标题翻译：使非晶质膜结晶的方法及其制造方法
公开(公告)号：US06835608B2
公开(公告)日：2004-12-28
申请号：US10189511
申请日：2002-07-08
申请人： Jin Jang , Kyung Ho Kim
发明人： Jin Jang , Kyung Ho Kim
IPC分类号： H01L2100
CPC分类号： H01L21/02488 , H01L21/02381 , H01L21/02532 , H01L21/02672 , H01L27/1277 , H01L27/1285 , H01L29/66757 , H01L29/78675
摘要： A method for crystallizing an amorphous film by doping phosphorus and using FE-MIC, and method for fabrication an LCD by using the same. The method for crystallizing an amorphous film includes forming an amorphous film containing an impurity on a substrate, forming a metal layer on the amorphous film, heat treating the amorphous film, and applying an electric field to the amorphous film.
摘要翻译：通过掺杂磷和使用FE-MICC来结晶非晶膜的方法以及使用它们制造LCD的方法。用于结晶非晶膜的方法包括在衬底上形成含有杂质的非晶膜，在非晶膜上形成金属层，对非晶膜进行热处理，并向非晶膜施加电场。

4. 发明申请

US20080095975A1 POLYCRYSTALLINE SILICON THIN FILM AND METHOD FOR FORMING THE SAME 审中-公开
标题翻译：多晶硅薄膜及其形成方法
公开(公告)号：US20080095975A1
公开(公告)日：2008-04-24
申请号：US11875145
申请日：2007-10-19
申请人： Jin Jang , Jun-Hyuk Cheon , Kyung-Ho Kim
发明人： Jin Jang , Jun-Hyuk Cheon , Kyung-Ho Kim
IPC分类号： B05D5/12 , B32B5/12
CPC分类号： C23C14/18 , C23C14/5806 , C23C16/24 , C23C28/321 , C23C28/322 , C23C28/323 , C23C28/325 , C23C28/34 , C23C28/345 , Y10T428/24058
摘要： A polycrystalline silicon thin film having grains defined by grain boundaries is provided. The polycrystalline silicon thin film is formed by interposing a cover layer between an amorphous silicon layer and a metal layer to diffuse the metal into the amorphous silicon layer through the cover layer, removing the cover layer, crystallizing the amorphous silicon layer to be changed to a polycrystalline silicon layer, depositing a metal on the polycrystalline silicon layer, and annealing the polycrystalline silicon layer. Specifically, the polycrystalline silicon thin film is formed by sequentially forming an amorphous silicon layer, a cover layer and a metal layer on an insulating substrate, annealing the amorphous silicon layer to be changed to a polycrystalline silicon layer, removing the cover layer, depositing a metal on the polycrystalline silicon layer, followed by annealing so that the average density per unit volume of the metal particles present at the grain boundaries is greater than that of the metal particles present within the grains.
摘要翻译：提供具有由晶界限定的晶粒的多晶硅薄膜。通过在非晶硅层和金属层之间插入覆盖层来形成多晶硅薄膜，以通过覆盖层将金属扩散到非晶硅层中，去除覆盖层，使非晶硅层结晶化，使其变为多晶硅层，在多晶硅层上沉积金属，退火多晶硅层。具体地，通过在绝缘基板上依次形成非晶硅层，覆盖层和金属层来形成多晶硅薄膜，将非晶硅层退火为多晶硅层，去除覆盖层，沉积金属在多晶硅层上，然后退火，使得存在于晶界处的金属颗粒的每单位体积的平均密度大于存在于晶粒内的金属颗粒的平均密度。

5. 发明授权

US07688370B2 Active pixel sensor array 有权
标题翻译：有源像素传感器阵列
公开(公告)号：US07688370B2
公开(公告)日：2010-03-30
申请号：US11295373
申请日：2005-12-06
申请人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
发明人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
IPC分类号： H04N3/14
CPC分类号： H04N5/37452 , H04N5/3559
摘要： Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.
摘要翻译：公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

6. 发明授权

US07662681B2 Method for fabricating reverse-staggered thin film transistor 失效
标题翻译：逆交错薄膜晶体管的制造方法
公开(公告)号：US07662681B2
公开(公告)日：2010-02-16
申请号：US11609374
申请日：2006-12-12
申请人： Jin Jang , Jun-Hyuk Cheon
发明人： Jin Jang , Jun-Hyuk Cheon
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78678 , H01L27/1296 , H01L29/04 , H01L29/66765
摘要： Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.
摘要翻译：本文公开了一种用于制造反向交错多晶硅薄膜晶体管的方法，更具体地说，一种用于制造反向交错多晶硅薄膜晶体管的方法，其中磷硅酸盐旋涂玻璃（P-SOG）用于栅极绝缘膜。该方法包括以下步骤：在绝缘基板上形成缓冲层; 在缓冲层上形成栅极金属图案; 在栅极金属图案上形成平坦化的栅极绝缘膜; 在栅极绝缘膜上沉积非晶硅层; 将所述非晶硅层结晶成多晶硅层; 在多晶硅层上形成n +或p +层; 在n +或p +层上形成源极/漏极金属层; 以及在源极/漏极金属层上形成钝化层。

7. 发明申请

US20090032873A1 Ultra thin single crystalline semiconductor TFT and process for making same 审中-公开
标题翻译：超薄单晶半导体TFT及其制造方法
公开(公告)号：US20090032873A1
公开(公告)日：2009-02-05
申请号：US11895125
申请日：2007-08-23
申请人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
发明人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78603 , H01L21/2007 , H01L29/78654
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

8. 发明申请

US20090021287A1 Circuit and method for driving organic light emitting diode 有权
标题翻译：用于驱动有机发光二极管的电路和方法
公开(公告)号：US20090021287A1
公开(公告)日：2009-01-22
申请号：US11662605
申请日：2004-09-15
申请人： Jin Jang , Joon-Chul Goh
发明人： Jin Jang , Joon-Chul Goh
IPC分类号： H03K3/00
CPC分类号： G09G3/3233 , G09G3/3291 , G09G2300/0819 , G09G2300/0842 , G09G2300/0861 , G09G2310/0262 , G09G2320/043
摘要： A drive circuit for organic light emitting diodes (OLEDs), and a method for driving OLEDs, using the drive circuit. The drive circuit includes pixel circuits, each of which includes a first transistor for receiving a data voltage, and outputting a drive current to an OLED, a second transistor for transmitting the data voltage to the first transistor, a third transistor for connecting the gate and drain of the first transistor, a capacitor for storing a gate voltage of the first transistor, and a fourth transistor connected to the drain of the first transistor. The OLED is connected to the source of the first transistor by a fifth transistor, or is directly connected to the source of the first transistor without using the fifth transistor. The drive circuit generates drive current, based on a non-uniformity-compensated threshold voltage of the first transistor, thereby obtaining a uniform luminance of the OLED.
摘要翻译：用于有机发光二极管（OLED）的驱动电路，以及使用驱动电路驱动OLED的方法。驱动电路包括像素电路，每个像素电路包括用于接收数据电压的第一晶体管和向OLED输出驱动电流，用于将数据电压传输到第一晶体管的第二晶体管，用于连接栅极和第一晶体管的漏极，用于存储第一晶体管的栅极电压的电容器和连接到第一晶体管的漏极的第四晶体管。 OLED通过第五晶体管连接到第一晶体管的源极，或者直接连接到第一晶体管的源极而不使用第五晶体管。驱动电路基于第一晶体管的不均匀补偿阈值电压产生驱动电流，从而获得OLED的均匀亮度。

9. 发明申请

US20070069637A1 Polymer light emitting diode having interinsulation layer and method for fabricating the same 审中-公开
标题翻译：具有隔离层的聚合物发光二极管及其制造方法
公开(公告)号：US20070069637A1
公开(公告)日：2007-03-29
申请号：US11321703
申请日：2005-12-29
申请人： Jin Jang , Yong-Kyun Lee
发明人： Jin Jang , Yong-Kyun Lee
IPC分类号： H05B33/00 , H01J1/62
CPC分类号： H01L51/50 , B82Y30/00 , H01L51/5088
摘要： A polymer light emitting diode having an interinsulation layer between a hole injecting layer (or a hole transporting layer) and a light emitting polymer layer, and a method for fabricating the polymer light emitting diode. The polymer light emitting diode having the interinsulation layer includes a hole injecting layer formed on an anode layer, formed on a glass substrate, by coating or printing; the interinsulation layer having a designated thickness formed on the hole injecting layer; a light emitting polymer layer formed on the interinsulation layer by coating or printing; and an electron injecting layer formed on the light emitting polymer layer, and a cathode layer formed on the electron injecting layer.
摘要翻译：具有空穴注入层（或空穴传输层）和发光聚合物层之间的绝缘层的聚合物发光二极管及其制造方法。具有绝缘层的聚合物发光二极管包括通过涂布或印刷形成在玻璃基板上的阳极层上形成的空穴注入层; 所述绝缘层具有形成在所述空穴注入层上的指定厚度; 通过涂布或印刷在绝缘层上形成的发光聚合物层; 以及形成在发光聚合物层上的电子注入层和形成在电子注入层上的阴极层。

10. 发明申请

US20060286780A1 Method for forming silicon thin-film on flexible metal substrate 失效
标题翻译：在柔性金属基板上形成硅薄膜的方法
公开(公告)号：US20060286780A1
公开(公告)日：2006-12-21
申请号：US10570285
申请日：2004-09-02
申请人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
发明人： Jin Jang , Jong-Hyun Choi , Seung-Soo Kim , Jae-Hwan Oh , Jun-Hyuk Chon
IPC分类号： H01L21/20
CPC分类号： H01L21/02532 , H01L21/02425 , H01L21/02488 , H01L21/02672 , H01L27/1277 , H01L29/78603
摘要： Disclosed are a method for forming a silicon thin-film on a substrate, and more particularly a method for forming a polycrystalline silicon thin-film of good quality on a flexible metal substrate. A metal substrate (110) is prepared and a surface of the metal substrate (110) is flattened. An insulation film (120) formed on the metal substrate (110). An amorphous silicon layer (130) is formed on the insulation film (120). A metal layer (140) is formed on the amorphous silicon layer (130). A sample on the metal substrate (110) is heated and crystallized.
摘要翻译：公开了一种在基板上形成硅薄膜的方法，更具体地说，涉及一种在柔性金属基板上形成质量好的多晶硅薄膜的方法。准备金属基板（110），使金属基板（110）的表面变平。形成在金属基板（110）上的绝缘膜（120）。在绝缘膜（120）上形成非晶硅层（130）。金属层（140）形成在非晶硅层（130）上。将金属基板（110）上的样品加热并结晶。

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