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1. 发明申请

US20100244108A1 CMOS IMAGE SENSOR ON A SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME 审中-公开
标题翻译：半导体绝缘体基板上的CMOS图像传感器及其制造方法
公开(公告)号：US20100244108A1
公开(公告)日：2010-09-30
申请号：US12414884
申请日：2009-03-31
申请人： Glenn Eric Kohnke , Carlo Anthony Kosik Williams
发明人： Glenn Eric Kohnke , Carlo Anthony Kosik Williams
IPC分类号： H01L31/101 , H01L31/0232
CPC分类号： H01L27/14645 , H01L27/14632 , H01L27/14634 , H01L27/14687 , H01L27/14689 , H01L27/1469
摘要： Methods and apparatus for producing a CMOS image sensor result in: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including: at least first, second, and third semiconductor islands, each island operating as a color sensitive photo-detector and each being of a different thickness such that each is sensitive to a respective range of light wavelengths, and a fourth semiconductor island on which at least one transistor is disposed, the at least one transistor operating to at least one of buffer, select, and reset one or more of the photo-detectors.
摘要翻译：用于制造CMOS图像传感器的方法和装置导致：具有第一和第二间隔开的表面的玻璃或玻璃陶瓷基片; 设置在玻璃或玻璃陶瓷基板的第一表面上的半导体层; 以及形成在所述半导体层中的多个像素结构，每个像素结构包括：至少第一，第二和第三半导体岛，每个岛作为色敏光检测器操作，并且各自具有不同的厚度，使得每个都是敏感的至少一个晶体管的第四半导体岛，所述至少一个晶体管工作于缓冲器，选择和复位一个或多个光电检测器中的至少一个。

2. 发明申请

US20090195511A1 Touch sensitive display employing an SOI substrate and integrated sensing circuitry 审中-公开
标题翻译：使用SOI衬底和集成感测电路的触敏显示器
公开(公告)号：US20090195511A1
公开(公告)日：2009-08-06
申请号：US12012564
申请日：2008-02-04
申请人： Jeffrey Scott Cites , David Francis Dawson-Elli , Eric John Mozdy , Carlo Anthony Kosik Williams
发明人： Jeffrey Scott Cites , David Francis Dawson-Elli , Eric John Mozdy , Carlo Anthony Kosik Williams
IPC分类号： G06F3/041
CPC分类号： G06F3/0412 , G06F3/044
摘要： Methods and apparatus for producing a touch sensitive LCD employing a semiconductor on glass (SiOG) structure provide for: a glass or glass-ceramic substrate; a single crystal semiconductor layer bonded to the glass or glass-ceramic substrate; display circuitry including a plurality of thin-film transistors disposed on the single crystal semiconductor layer and forming a matrix of display pixels; display control circuitry operable to drive the display circuitry to produce viewable images; and sensing circuitry operable to detect electrical characteristic changes in one or more of the single crystal semiconductor layer and the display circuitry, the electrical characteristic changes resulting from user touch events.
摘要翻译：使用玻璃上的半导体（SiOG）结构的触敏LCD的制造方法和装置提供：玻璃或玻璃陶瓷基片; 结合到玻璃或玻璃陶瓷基板的单晶半导体层; 显示电路，包括设置在单晶半导体层上并形成显示像素矩阵的多个薄膜晶体管; 显示控制电路，其可操作以驱动所述显示电路以产生可视图像; 以及可操作以检测单晶半导体层和显示电路中的一个或多个中的电特性变化的感测电路，由用户触摸事件导致的电特性变化。

3. 发明申请

US20100108890A1 METHODS OF CHARACTERIZING AND MEASURING PARTICULATE FILTER ACCUMULATION 有权
标题翻译：表征和测量颗粒过滤器累积的方法
公开(公告)号：US20100108890A1
公开(公告)日：2010-05-06
申请号：US12582981
申请日：2009-10-21
申请人： Natarajan Gunasekaran , Vitor Marino Schneider , Charlene Marie Smith , Carlo Anthony Kosik Williams
发明人： Natarajan Gunasekaran , Vitor Marino Schneider , Charlene Marie Smith , Carlo Anthony Kosik Williams
IPC分类号： G01J5/02
CPC分类号： G01N21/94 , G01N21/3504 , G01N21/3577 , G01N21/3581 , G01N2201/129
摘要： Methods of characterizing and measuring particulate accumulation in a family of particulate filters (10) are disclosed. The disclosure can be applied to diesel, gasoline and natural gas fueled engines, fluid streams bearing dust, and chemical and biological substances such as may be found in laboratory fluids, for example, air. In one embodiment, the disclosure is directed to measuring diesel particulate accumulation in a family of diesel particulate filters. The methods include measuring calibration complex terahertz transmission spectra (PC(f)) of at least a portion (17) of at least one particulate or diesel particulate filter in the family for different known particulate or diesel particulate amounts (ADP). The method also involves performing a partial least squares (PLS) analysis on the calibration complex terahertz transmission spectra to establish a calibration relationship between the complex terahertz transmission spectra and the particulate or diesel particulate amounts. The complex transmission spectrum of a subject particulate filter or diesel particulate filter having an unknown amount of particulate or diesel particulate accumulation is then determined and compared to the linear calibration relationship to establish a measured amount of particulates or diesel particulates. The methods include using a terahertz (THz) system (100) to obtain the complex terahertz transmission spectra for the calibration and subject particulate or diesel particulate filters.
摘要翻译：公开了在微粒过滤器（10）系列中表征和测量颗粒积聚的方法。本公开可以应用于柴油，汽油和天然气燃料发动机，带有灰尘的流体流，以及诸如可以在实验室流体例如空气中发现的化学和生物物质。在一个实施方案中，本公开涉及测量柴油颗粒过滤器系列中的柴油颗粒物积聚。所述方法包括测量家族中至少一种颗粒或柴油颗粒过滤器的至少一部分（17）的校准复数太赫兹透射光谱（PC（f）），用于不同的已知颗粒或柴油颗粒量（ADP）。该方法还涉及对校准复数太赫兹透射光谱进行偏最小二乘法（PLS）分析，以建立复数太赫兹透射光谱与颗粒或柴油颗粒量之间的校准关系。然后确定具有未知量的颗粒或柴油颗粒物积聚的目标颗粒过滤器或柴油颗粒过滤器的复杂透射光谱，并将其与线性校准关系进行比较，以建立测量量的颗粒物或柴油颗粒物。这些方法包括使用太赫兹（THz）系统（100）来获得用于校准和主体颗粒或柴油颗粒过滤器的复数太赫兹透射光谱。

4. 发明申请

US20090032873A1 Ultra thin single crystalline semiconductor TFT and process for making same 审中-公开
标题翻译：超薄单晶半导体TFT及其制造方法
公开(公告)号：US20090032873A1
公开(公告)日：2009-02-05
申请号：US11895125
申请日：2007-08-23
申请人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
发明人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78603 , H01L21/2007 , H01L29/78654
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

5. 发明申请

US20100201671A1 METHODS AND APPARATUS FOR PRODUCING PRECISION CURRENT OVER A WIDE DYNAMIC RANGE 审中-公开
标题翻译：在宽动态范围内生产精密电流的方法和装置
公开(公告)号：US20100201671A1
公开(公告)日：2010-08-12
申请号：US12677662
申请日：2008-09-09
申请人： Robert J. Bowman , Chris J. Nassar , Carlo Anthony Kosik Williams
发明人： Robert J. Bowman , Chris J. Nassar , Carlo Anthony Kosik Williams
IPC分类号： G06F3/038 , H03K3/00
CPC分类号： G05F3/262 , G09G3/2011 , G09G3/3216 , G09G3/3241 , G09G3/3283 , G09G2310/0259 , G09G2310/0272 , G09G2310/0297 , G09G2320/0223 , G09G2320/0233 , G09G2320/0252
摘要： Methods and apparatus provide for producing a remote current for driving a load, comprising: producing a local current, Iref; amplifying the local current Iref by a value of K to produce a local current K Iref; mirroring the local current K Iref to another location; producing a remote current K Iref in response to the mirroring of the local current K Iref; and dividing the remote current K Iref by a matched value of K to produce a remote current Iref for driving the load.
摘要翻译：方法和装置提供用于产生用于驱动负载的远程电流，包括：产生局部电流Iref; 将局部电流Iref放大一个K值以产生局部电流K Iref; 将本地当前的K Iref镜像到另一个位置; 响应于局部电流K Iref的镜像产生远程电流K Iref; 并且将远程电流K Iref除以K的匹配值，以产生用于驱动负载的远程电流Iref。

6. 发明授权

US08319183B2 Methods of characterizing and measuring particulate filter accumulation 有权
标题翻译：表征和测量微粒过滤器积聚的方法
公开(公告)号：US08319183B2
公开(公告)日：2012-11-27
申请号：US12582981
申请日：2009-10-21
申请人： Natarajan Gunasekaran , Vitor Marino Schneider , Charlene Marie Smith , Carlo Anthony Kosik Williams
发明人： Natarajan Gunasekaran , Vitor Marino Schneider , Charlene Marie Smith , Carlo Anthony Kosik Williams
IPC分类号： G01J5/02
CPC分类号： G01N21/94 , G01N21/3504 , G01N21/3577 , G01N21/3581 , G01N2201/129
摘要： Methods of characterizing and measuring particulate accumulation in a family of particulate filters (10) are disclosed. The disclosure can be applied to diesel, gasoline and natural gas fueled engines, fluid streams bearing dust, and chemical and biological substances such as may be found in laboratory fluids, for example, air. In one embodiment, the disclosure is directed to measuring diesel particulate accumulation in a family of diesel particulate filters. The methods include measuring calibration complex terahertz transmission spectra (PC(f)) of at least a portion (17) of at least one particulate or diesel particulate filter in the family for different known particulate or diesel particulate amounts (ADP). The method also involves performing a partial least squares (PLS) analysis on the calibration complex terahertz transmission spectra to establish a calibration relationship between the complex terahertz transmission spectra and the particulate or diesel particulate amounts. The complex transmission spectrum of a subject particulate filter or diesel particulate filter having an unknown amount of particulate or diesel particulate accumulation is then determined and compared to the linear calibration relationship to establish a measured amount of particulates or diesel particulates. The methods include using a terahertz (THz) system (100) to obtain the complex terahertz transmission spectra for the calibration and subject particulate or diesel particulate filters.
摘要翻译：公开了在微粒过滤器（10）系列中表征和测量颗粒积聚的方法。本公开可以应用于柴油，汽油和天然气燃料发动机，带有灰尘的流体流，以及诸如可以在实验室流体例如空气中发现的化学和生物物质。在一个实施方案中，本公开涉及测量柴油颗粒过滤器系列中的柴油颗粒物积聚。所述方法包括测量家族中至少一种颗粒或柴油颗粒过滤器的至少一部分（17）的校准复数太赫兹透射光谱（PC（f）），用于不同的已知颗粒或柴油颗粒量（ADP）。该方法还涉及对校准复数太赫兹透射光谱进行偏最小二乘法（PLS）分析，以建立复数太赫兹透射光谱与颗粒或柴油颗粒量之间的校准关系。然后确定具有未知量的颗粒或柴油颗粒物积聚的目标颗粒过滤器或柴油颗粒过滤器的复杂透射光谱，并将其与线性校准关系进行比较，以建立测量量的颗粒物或柴油颗粒物。这些方法包括使用太赫兹（THz）系统（100）来获得用于校准和主体颗粒或柴油颗粒过滤器的复数太赫兹透射光谱。

7. 发明申请

US20100327354A1 THIN FILM TRANSISTOR HAVING LONG LIGHTLY DOPED DRAIN ON SOI SUBSTRATE AND PROCESS FOR MAKING SAME 审中-公开
标题翻译：在SOI衬底上具有长焦深漏极的薄膜晶体管及其制造方法
公开(公告)号：US20100327354A1
公开(公告)日：2010-12-30
申请号：US12865006
申请日：2009-01-27
申请人： Jin Jang , Carlo Anthony Kosik Williams , ChuanChe Wang
发明人： Jin Jang , Carlo Anthony Kosik Williams , ChuanChe Wang
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78621 , H01L27/3262
摘要： Methods and apparatus for producing a thin film transistor (TFT) result in: a glass or glass ceramic substrate; a single crystal semiconductor layer; a source structure disposed on the single crystal semiconductor layer; a drain structure disposed on the single crystal semiconductor layer; and a gate structure located with respect to the drain structure defining a lightly doped drain region therein, wherein a lateral length of the lightly doped drain region is such that the TFT exhibits a relatively low carrier mobility and moderate sub-threshold slope suitable for OLED display applications.
摘要翻译：用于制造薄膜晶体管（TFT）的方法和设备导致：玻璃或玻璃陶瓷衬底; 单晶半导体层; 设置在单晶半导体层上的源极结构; 设置在单晶半导体层上的漏极结构; 以及相对于在其中限定轻掺杂漏极区的漏极结构定位的栅结构，其中轻掺杂漏极区的横向长度使得TFT表现出相对较低的载流子迁移率和适合于OLED显示的适度亚阈值斜率应用程序。

8. 发明申请

US20100213466A1 PHOTOSENSORS INCLUDING SEMICONDUCTOR-ON-INSULATOR STRUCTURE 审中-公开
标题翻译：包括半导体绝缘体结构的光电传感器
公开(公告)号：US20100213466A1
公开(公告)日：2010-08-26
申请号：US12393292
申请日：2009-02-26
申请人： Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
发明人： Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
IPC分类号： H01L33/00 , H01L31/0352 , H01L29/786
CPC分类号： H01L31/105 , G02F1/13338 , G02F2001/13312 , G02F2001/13324 , G02F2202/09 , G02F2202/105 , H01L21/76254 , H01L27/1214 , H01L31/03921 , H01L31/1136 , Y02E10/50
摘要： Photosensor based on SOI technology and display devices comprising the same. The photosensor can be a photodiode or a phototransistor, or a combination thereof when incorporated in a device. The photosensor exhibits a higher photoresponse than a traditional photosensor based on amorphous silicon film or polysilicon thin film technology. The present invention is useful, e.g., in making multifunctional display devices having photosensing function integrated therein.
摘要翻译：基于SOI技术的光传感器和包括该技术的显示装置。光电传感器可以是光电二极管或光电晶体管，或其结合在装置中时的组合。光传感器比基于非晶硅膜或多晶硅薄膜技术的传统光电传感器具有更高的光响应。本发明例如在制造具有光敏功能的多功能显示装置中是有用的。

9. 发明申请

US20090294853A1 THIN FILM TRANSISTOR HAVING A COMMON CHANNEL AND SELECTABLE DOPING CONFIGURATION 审中-公开
标题翻译：具有通用通道和可选择的配置的薄膜晶体管
公开(公告)号：US20090294853A1
公开(公告)日：2009-12-03
申请号：US12474731
申请日：2009-05-29
申请人： Germain L. Fenger , Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
发明人： Germain L. Fenger , Karl D. Hirschman , Robert Manley , Carlo Anthony Kosik Williams
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78696 , H01L27/0705 , H01L27/12
摘要： Methods and apparatus for producing a thin film transistor (TFT) result in: a semiconductor layer; a channel region formed on or in the semiconductor layer and having first and second opposing ends, and having third and fourth opposing ends transverse to the first and second ends; an n-type source structure disposed on or in the semiconductor layer adjacent to the first end of the channel; an n-type drain structure disposed on or in the semiconductor layer adjacent to the second end of the channel; a p-type source structure disposed on or in the semiconductor layer adjacent to the third end of the channel; a p-type drain structure disposed on or in the semiconductor layer adjacent to the fourth end of the channel; and a gate structure disposed over the channel region.
摘要翻译：用于制造薄膜晶体管（TFT）的方法和装置导致：半导体层; 形成在半导体层上或半导体层中并具有第一和第二相对端并且具有横向于第一和第二端的第三和第四相对端的沟道区; 设置在与沟道的第一端相邻的半导体层上或其中的n型源极结构; 设置在与沟道的第二端相邻的半导体层上或其中的n型漏极结构; 设置在与沟道的第三端相邻的半导体层中或其中的p型源极结构; 设置在与沟道的第四端相邻的半导体层上或其中的p型漏极结构; 以及设置在沟道区域上的栅极结构。

10. 发明申请

US20100276736A1 CMOS IMAGE SENSOR ON STACKED SEMICONDUCTOR-ON-INSULATOR SUBSTRATE AND PROCESS FOR MAKING SAME 审中-公开
标题翻译：堆叠半导体绝缘体基板上的CMOS图像传感器及其制造方法
公开(公告)号：US20100276736A1
公开(公告)日：2010-11-04
申请号：US12771544
申请日：2010-04-30
申请人： Mark Frederick Bocko , Zeljko Ignjatovic , Carlo Anthony Kosik Williams , Donnell Thaddeus Walton , ChuanChe Wang , James Matthew Zavislan
发明人： Mark Frederick Bocko , Zeljko Ignjatovic , Carlo Anthony Kosik Williams , Donnell Thaddeus Walton , ChuanChe Wang , James Matthew Zavislan
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14647 , H01L27/14632 , H01L27/14634 , H01L27/14687 , H01L27/1469
摘要： Methods and apparatus for producing a CMOS image sensor result in a plurality of photo sensitive layers, each layer including: a glass or glass ceramic substrate having first and second spaced-apart surfaces; a semiconductor layer disposed on the first surface of the glass or glass ceramic substrate; and a plurality of pixel structures formed in the semiconductor layer, each pixel structure including a plurality of semiconductor islands, at least one island operating as a color sensitive photo-detector sensitive to a respective range of light wavelengths, wherein the plurality of photo sensitive layers are stacked one on the other, such that incident light enters the CMOS image sensor through the first spaced-apart surface of the glass or glass ceramic substrate of one of the plurality of photo sensitive layers, and subsequently passes into further photo sensitive layers if one or more wavelengths of the incident light are sufficiently long.
摘要翻译：用于制造CMOS图像传感器的方法和装置产生多个感光层，每个层包括：具有第一和第二间隔表面的玻璃或玻璃陶瓷基片; 设置在玻璃或玻璃陶瓷基板的第一表面上的半导体层; 以及形成在所述半导体层中的多个像素结构，每个像素结构包括多个半导体岛，至少一个岛作为对各个光波长范围敏感的感光光敏检测器，其中所述多个光敏层彼此堆叠，使得入射光通过多个光敏层中的一个的玻璃或玻璃陶瓷基板的第一间隔开的表面进入CMOS图像传感器，并且随后进入另外的光敏层，如果一个或更多波长的入射光足够长。

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