专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06952022B2 Image sensor comprising thin film transistor optical sensor having offset region 有权
标题翻译：图像传感器包括具有偏移区域的薄膜晶体管光学传感器
公开(公告)号：US06952022B2
公开(公告)日：2005-10-04
申请号：US10732320
申请日：2003-12-09
申请人： Jin Jang , Ji Ho Hur , Hyun Chul Nam
发明人： Jin Jang , Ji Ho Hur , Hyun Chul Nam
IPC分类号： H01L29/786 , H01L27/146 , H01L31/0376 , H01L31/10 , H01L29/04
CPC分类号： H01L31/0376 , H01L27/14643 , H01L27/14658 , H01L27/14692 , Y02E10/50
摘要： The present invention relates to an image sensor comprising an amorphous silicon thin-film transistor optical sensor which functions as an image sensor used for an X-ray photography device, a fingerprint recognition apparatus, a scanner, etc., and a method of manufacturing the image sensor. Since the thin-film transistor optical sensor according to the present invention has a high-resistance silicon region by disposing an offset region in a channel region, a dark leakage current of the optical sensor remains in a low level even under a high voltage. Therefore, it is possible to apply a high voltage to the thin-film transistor optical sensor according to the present invention so that the image senor can be sensitive to a weak light. In addition, since the storage capacitance in the image sensor is formed in a double structure, the image sensor has a high value of capacitance. Furthermore, since a lower common electrode is electrically connected to an upper common electrode, the image sensor has a stable structure.
摘要翻译：本发明涉及一种图像传感器，包括用作用于X射线摄影装置的图像传感器，指纹识别装置，扫描仪等的非晶硅薄膜晶体管光学传感器及其制造方法图像传感器。由于根据本发明的薄膜晶体管光学传感器通过在沟道区域中设置偏移区域而具有高电阻硅区域，所以即使在高电压下，光学传感器的暗漏电流也保持在低电平。因此，可以对根据本发明的薄膜晶体管光学传感器施加高电压，使得图像传感器可以对弱光敏感。此外，由于图像传感器中的存储电容形成为双重结构，所以图像传感器具有高的电容值。此外，由于下部公共电极与上部公共电极电连接，所以图像传感器具有稳定的结构。

2. 发明授权

US07688370B2 Active pixel sensor array 有权
标题翻译：有源像素传感器阵列
公开(公告)号：US07688370B2
公开(公告)日：2010-03-30
申请号：US11295373
申请日：2005-12-06
申请人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
发明人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
IPC分类号： H04N3/14
CPC分类号： H04N5/37452 , H04N5/3559
摘要： Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.
摘要翻译：公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

3. 发明授权

US07944415B2 Organic light emitting diode display device and a driving method thereof 有权
标题翻译：有机发光二极管显示装置及其驱动方法
公开(公告)号：US07944415B2
公开(公告)日：2011-05-17
申请号：US11396925
申请日：2006-04-03
申请人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Youn-Duck Nam
发明人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Youn-Duck Nam
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2310/0262 , G09G2320/043 , G09G2320/045 , G09G2360/145 , G09G2360/148
摘要： Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.
摘要翻译：公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

4. 发明申请

US20070024547A1 Organic light emitting diode display device and a driving method thereof 有权
标题翻译：有机发光二极管显示装置及其驱动方法
公开(公告)号：US20070024547A1
公开(公告)日：2007-02-01
申请号：US11396925
申请日：2006-04-03
申请人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Youn-Duck Nam
发明人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Youn-Duck Nam
IPC分类号： G09G3/30
CPC分类号： G09G3/3233 , G09G2300/0819 , G09G2300/0842 , G09G2310/0262 , G09G2320/043 , G09G2320/045 , G09G2360/145 , G09G2360/148
摘要： Disclosed are an Organic Light Emitting Diode (OLED) display device having a pixel circuit which use a thin film transistor (TFT) as an active device and a driving method thereof. The OLED display device can constantly obtain luminance of the light emitting elements by elapsed time, because the brightness of the pixel for the signal voltage is not varied by a characteristic variance of the transistor (e.g., a driving element) and the OLED. Accordingly, the OLED display device according to the present invention can minimizes the variance of the pixel brightness due to deterioration of the transistor and the OLED caused by usage for a long time and increase life span of the display device. Further, the OLED display device can display high quality of the image even in case of the high precision display, because it is controlled to flow the current to OLED included in each pixel.
摘要翻译：公开了具有使用薄膜晶体管（TFT）作为有源器件的像素电路的有机发光二极管（OLED）显示装置及其驱动方法。由于用于信号电压的像素的亮度不被晶体管（例如，驱动元件）和OLED的特征方差改变，所以OLED显示装置可以经常地获得发光元件的亮度。因此，根据本发明的OLED显示装置可以最小化由于长时间使用引起的晶体管和OLED的劣化导致的像素亮度的变化，并且增加显示装置的使用寿命。此外，即使在高精度显示的情况下，OLED显示装置也可以显示高质量的图像，因为它被控制以将电流流动到包括在每个像素中的OLED。

5. 发明申请

US20060119718A1 Active pixel sensor array 有权
标题翻译：有源像素传感器阵列
公开(公告)号：US20060119718A1
公开(公告)日：2006-06-08
申请号：US11295373
申请日：2005-12-06
申请人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
发明人： Ji-Ho Hur , Se-Hwan Kim , Jin Jang
IPC分类号： H04N5/335
CPC分类号： H04N5/37452 , H04N5/3559
摘要： Disclosed is an active pixel sensor array, which can reduce the number of elements and the size of capacitors by enabling a reset switching transistor to include a function of an optical sensor and to reset a pixel voltage with a power supply voltage VDD after a gate selection signal is outputted, and to reset a pixel voltage with a power supply voltage VDD by a coupling function in case that a gate selection signal is outputted. The active pixel image sensor having a gate driving circuit and a column driving circuit includes a pixel composed of a voltage supply unit for supplying a signal voltage to the column driving circuit; a gate selection unit for turning on according to a n+1-th gate selection signal and outputting a voltage based on a difference between a pixel voltage and a threshold voltage of the voltage supply unit; a reset switching unit for turning on according to a n+1-th gate selection signal and resetting the pixel voltage with a power supply voltage VDD; and a storage unit and a coupling unit for coupling so as to initialize the pixel voltage to be lower than the power supply voltage VDD just after the n+1-th gate selection signal is outputted.
摘要翻译：公开了一种有源像素传感器阵列，其可以通过使复位开关晶体管包括光学传感器的功能并且在栅极选择之后以电源电压VDD复位像素电压来减少元件的数量和电容器的尺寸在输出栅极选择信号的情况下，通过耦合功能输出信号，并且利用电源电压VDD复位像素电压。具有栅极驱动电路和列驱动电路的有源像素图像传感器包括由用于向列驱动电路提供信号电压的电压供给单元构成的像素; 栅极选择单元，用于根据第n + 1栅极选择信号导通，并且基于像素电压和电压提供单元的阈值电压之间的差输出电压; 复位开关单元，用于根据第n + 1个选通信号导通，并用电源电压VDD复位像素电压; 以及存储单元和耦合单元，用于耦合以将像素电压初始化为低于在输出第n + 1门选通信号之后的电源电压VDD。

6. 发明申请

US20070024546A1 Unevenness detecting apparatus for compensating for threshold voltage and method thereof 有权
标题翻译：用于补偿阈值电压的不均匀性检测装置及其方法
公开(公告)号：US20070024546A1
公开(公告)日：2007-02-01
申请号：US11396951
申请日：2006-04-03
申请人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Seung-Hyun Park
发明人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Seung-Hyun Park
IPC分类号： G09G3/30
CPC分类号： G06K9/0002
摘要： Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.
摘要翻译：用于补偿阈值电压的不均匀性检测装置及其方法具有多条扫描线和多条数据线以及排列在扫描线和数据线相交的各点的像素电路。用于补偿阈值电压的不均匀性检测装置及其方法可以通过使用有源元件（例如TFT）作为构成像素电路的元件来精确地感测诸如指纹的微小不均匀的状态。

7. 发明授权

US07884810B2 Unevenness detecting apparatus for compensating for threshold voltage and method thereof 有权
标题翻译：用于补偿阈值电压的不均匀性检测装置及其方法
公开(公告)号：US07884810B2
公开(公告)日：2011-02-08
申请号：US11396951
申请日：2006-04-03
申请人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Seung-Hyun Park
发明人： Jin Jang , Ji-Ho Hur , Se-Hwan Kim , Seung-Hyun Park
IPC分类号： G06F3/045
CPC分类号： G06K9/0002
摘要： Unevenness detecting apparatus for compensating for threshold voltage and method thereof is provided with a plurality of scan lines and a plurality of data lines and a pixel circuit arranged in each point which the scan lines and the data lines are intersected. The unevenness detecting apparatus for compensating for the threshold voltage and method thereof may accurately sense a state of minute unevenness such as fingerprints by using an active element (e.g., TFT) as an element of which pixel circuit is composed.
摘要翻译：用于补偿阈值电压的不均匀性检测装置及其方法具有多条扫描线和多条数据线以及排列在扫描线和数据线相交的各点的像素电路。用于补偿阈值电压的不均匀性检测装置及其方法可以通过使用有源元件（例如TFT）作为构成像素电路的元件来精确地感测诸如指纹的微小不均匀的状态。

8. 发明授权

US07442588B2 Method for fabricating thin film transistor using local oxidation and transparent thin film transistor 有权
标题翻译：使用局部氧化和透明薄膜晶体管制造薄膜晶体管的方法
公开(公告)号：US07442588B2
公开(公告)日：2008-10-28
申请号：US11830010
申请日：2007-07-30
申请人： Jin Jang , Se-Hwan Kim , Youn-Duck Nam , Eung-Bum Kim , Ji-Ho Hur
发明人： Jin Jang , Se-Hwan Kim , Youn-Duck Nam , Eung-Bum Kim , Ji-Ho Hur
IPC分类号： H01L21/00
CPC分类号： H01L29/7869
摘要： Disclosed is a method for fabricating a thin film transistor. Specifically, the method uses local oxidation wherein a portion of a transparent metal oxide layer is locally oxidized to be converted into a semiconductor layer so that the oxidized portion of the transparent metal oxide layer can be used as a channel region and the unoxidized portions of the transparent metal oxide layer can be used as source and drain electrodes.The method comprises the steps of forming a gate electrode on a substrate and forming a gate insulating layer thereon, forming a transparent metal oxide layer on the gate insulating layer, forming an oxidation barrier layer on the transparent metal oxide layer in such a manner that a portion of the transparent metal oxide layer positioned over the gate electrode is exposed, and locally oxidizing only the exposed portion of the transparent metal oxide layer to convert the exposed portion into a semiconductor layer.
摘要翻译：公开了一种制造薄膜晶体管的方法。具体地，该方法使用局部氧化，其中透明金属氧化物层的一部分被局部氧化以转化为半导体层，使得透明金属氧化物层的氧化部分可以用作沟道区域，并且所述非氧化部分透明金属氧化物层可以用作源极和漏极。该方法包括以下步骤：在衬底上形成栅电极并在其上形成栅极绝缘层，在栅绝缘层上形成透明金属氧化物层，在透明金属氧化物层上形成氧化阻挡层，露出位于栅电极上方的透明金属氧化物层的部分，仅局部氧化透明金属氧化物层的露出部分，将露出部分转换为半导体层。

9. 发明授权

US07662681B2 Method for fabricating reverse-staggered thin film transistor 失效
标题翻译：逆交错薄膜晶体管的制造方法
公开(公告)号：US07662681B2
公开(公告)日：2010-02-16
申请号：US11609374
申请日：2006-12-12
申请人： Jin Jang , Jun-Hyuk Cheon
发明人： Jin Jang , Jun-Hyuk Cheon
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L29/78678 , H01L27/1296 , H01L29/04 , H01L29/66765
摘要： Disclosed herein is a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor, and more specifically a method for fabricating a reverse-staggered polycrystalline silicon thin film transistor wherein a phosphosilicate-spin-on-glass (P-SOG) is used for a gate insulating film. The method comprises the steps of: forming a buffer layer on an insulating substrate; forming a gate metal pattern on the buffer layer; forming a planarized gate insulating film on the gate metal pattern; depositing an amorphous silicon layer on the gate insulating film; crystallizing the amorphous silicon layer into a polycrystalline silicon layer; forming a n+ or p+ layer on the polycrystalline silicon layer; forming a source/drain metal layer on the n+ or p+ layer; and forming a passivation layer on the source/drain metal layer.
摘要翻译：本文公开了一种用于制造反向交错多晶硅薄膜晶体管的方法，更具体地说，一种用于制造反向交错多晶硅薄膜晶体管的方法，其中磷硅酸盐旋涂玻璃（P-SOG）用于栅极绝缘膜。该方法包括以下步骤：在绝缘基板上形成缓冲层; 在缓冲层上形成栅极金属图案; 在栅极金属图案上形成平坦化的栅极绝缘膜; 在栅极绝缘膜上沉积非晶硅层; 将所述非晶硅层结晶成多晶硅层; 在多晶硅层上形成n +或p +层; 在n +或p +层上形成源极/漏极金属层; 以及在源极/漏极金属层上形成钝化层。

10. 发明申请

US20090032873A1 Ultra thin single crystalline semiconductor TFT and process for making same 审中-公开
标题翻译：超薄单晶半导体TFT及其制造方法
公开(公告)号：US20090032873A1
公开(公告)日：2009-02-05
申请号：US11895125
申请日：2007-08-23
申请人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
发明人： Jeffrey Scott Cites , Jin Jang , ChuanChe Wang , Carlo Anthony Kosik Williams , Sung Eun Ahn
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78603 , H01L21/2007 , H01L29/78654
摘要： Methods and apparatus for producing a semiconductor on glass (SiOG) structure include: subjecting an implantation surface of a donor single crystal semiconductor wafer to an ion implantation process to create an exfoliation layer of the donor semiconductor wafer; bonding the implantation surface of the exfoliation layer to a glass substrate using electrolysis; separating the exfoliation layer from the donor semiconductor wafer, thereby exposing a cleaved surface of the exfoliation layer; subjecting the cleaved surface of the exfoliation layer to a dry etching process to produce a single crystal semiconductor layer of about 5-20 nm thickness; and forming a thin film transistor in the thin semiconductor layer.
摘要翻译：用于制造玻璃（SiOG）结构的半导体的方法和装置包括：使施主单晶半导体晶片的注入表面进行离子注入工艺以产生施主半导体晶片的剥离层; 使用电解将剥离层的注入表面粘合到玻璃基板上; 将剥离层与施主半导体晶片分离，从而暴露剥离层的切割表面; 使剥离层的切割表面进行干蚀刻工艺以产生约5-20nm厚度的单晶半导体层; 以及在所述薄半导体层中形成薄膜晶体管。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式