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1. 发明申请

US20090191320A1 PURIFIED PYRROLOQUINOLINE QUINONE FORTIFIED FOOD 有权
标题翻译：纯化的吡咯烷醇喹诺酮衍生的食品
公开(公告)号：US20090191320A1
公开(公告)日：2009-07-30
申请号：US12037074
申请日：2008-02-25
申请人： JIANXIN GU , Xiaojing Yun , Xiaoning Chen , Si Zhang , Junwu Yang , Yihong Wu
发明人： JIANXIN GU , Xiaojing Yun , Xiaoning Chen , Si Zhang , Junwu Yang , Yihong Wu
IPC分类号： A23L3/3544 , A23L3/3454 , A23B4/18 , A23B5/08 , A23B9/16 , A23L2/44 , C12P17/18 , A23C3/08 , A23L3/37
CPC分类号： A23L3/3526 , A23C3/08 , A23L2/44 , A23L3/3508 , A23L3/3544
摘要： Food products fortified by purified PQQ and methods of application and production are disclosed. A method of preserving a food product comprising admixing an effective amount of purified PQQ or a compound containing purified PQQ derivatives with a foodstuff to provide an inhibiting means to microorganism growth in the food product.
摘要翻译：公开了通过纯化的PQQ和应用和生产方法强化的食品。一种保存食品的方法，包括将有效量的纯化的PQQ或含有纯化的PQQ衍生物的化合物与食品混合，以提供食品中微生物生长的抑制手段。

2. 发明申请

US20120070866A1 PURIFIED PYRROLOQUINOLINE QUINONE FORTIFIED FOOD 审中-公开
标题翻译：纯化的吡咯烷醇喹诺酮衍生的食品
公开(公告)号：US20120070866A1
公开(公告)日：2012-03-22
申请号：US13308279
申请日：2011-11-30
申请人： Jianxin Gu , Xiaojing Yun , Xiaoning Chen , Si Zhang , Junwu Yang , Yihong Wu
发明人： Jianxin Gu , Xiaojing Yun , Xiaoning Chen , Si Zhang , Junwu Yang , Yihong Wu
IPC分类号： C12P17/18 , A23C3/08 , A23D7/06 , A23G4/00 , A23B9/26 , A23D9/06 , A23B5/14 , A23L2/44 , A23L2/02 , A23L2/00 , C12H1/00 , A23L3/3481 , A23B4/20
CPC分类号： A23L3/3526 , A23C3/08 , A23L2/44 , A23L3/3508 , A23L3/3544
摘要： Food products fortified by purified PQQ and methods of application and production are disclosed. A method of preserving a food product comprising admixing an effective amount of purified PQQ or a compound containing purified PQQ derivatives with a foodstuff to provide an inhibiting means to microorganism growth in the food product.
摘要翻译：公开了通过纯化的PQQ和应用和生产方法强化的食品。一种保存食品的方法，包括将有效量的纯化的PQQ或含有纯化的PQQ衍生物的化合物与食品混合，以提供食品中微生物生长的抑制手段。

3. 发明授权

US08088422B2 Purified pyrroloquinoline quinone fortified food 有权
标题翻译：纯化吡咯喹啉醌强化食品
公开(公告)号：US08088422B2
公开(公告)日：2012-01-03
申请号：US12037074
申请日：2008-02-25
申请人： Jianxin Gu , Xiaojing Yun , Xiaoning Chen , Si Zhang , Junwu Yang , Yihong Wu
发明人： Jianxin Gu , Xiaojing Yun , Xiaoning Chen , Si Zhang , Junwu Yang , Yihong Wu
IPC分类号： A23C3/00
CPC分类号： A23L3/3526 , A23C3/08 , A23L2/44 , A23L3/3508 , A23L3/3544
摘要： Food products fortified by purified PQQ and methods of application and production are disclosed. A method of preserving a food product comprising admixing an effective amount of purified PQQ or a compound containing purified PQQ derivatives with a foodstuff to provide an inhibiting means to microorganism growth in the food product.
摘要翻译：公开了通过纯化的PQQ和应用和生产方法强化的食品。一种保存食品的方法，包括将有效量的纯化的PQQ或含有纯化的PQQ衍生物的化合物与食品混合，以提供食品中微生物生长的抑制手段。

4. 发明授权

US06597618B2 Magnetic tunnel junction magnetic random access memory 有权
标题翻译：磁隧道结磁随机存取存储器
公开(公告)号：US06597618B2
公开(公告)日：2003-07-22
申请号：US10185667
申请日：2002-06-27
申请人： Yuankai Zheng , Yihong Wu , Xiaoyan Wang , Dan You
发明人： Yuankai Zheng , Yihong Wu , Xiaoyan Wang , Dan You
IPC分类号： G11C700
CPC分类号： G11C11/16
摘要： A circuit for controlling a read operation for a magnetic random access memory (MRAM) comprising an array of magnetic tunnel junctions (MTJ) having conducting row and column lines attached thereto. The circuitry comprises a current supply for providing a read current, and a row selector for selecting a row containing a junction to be read and applying the read current to that row with the respective row line. An unselected row switch switches to at least some of the row lines not connected to the MTJ to be read, and a voltage source applies, via the unselected row switch, a voltage to each of the unselected row lines that is substantially identical in level to the voltage on the selected row line. A column selector selects the column line connected to the array containing the MTJ to be read, and a voltage detector for detecting the voltage across the MTJ to be read via the selected column and row lines.
摘要翻译：一种用于控制用于磁性随机存取存储器（MRAM）的读取操作的电路，包括具有连接到其上的导电行和列线的磁性隧道结（MTJ）阵列。电路包括用于提供读取电流的电流源，以及用于选择包含要读取的结的行的行选择器，并且将读取的电流施加到具有相应行行的该行。未选择的行开关切换到未连接到要读取的MTJ的至少一些行线，并且电压源通过未选择的行开关向每个未选择的行线施加电压，该电压基本上等于所选行线上的电压。列选择器选择连接到包含要读取的MTJ的阵列的列线，以及电压检测器，用于检测要通过所选列和行线读取的MTJ上的电压。

5. 发明授权

US07408802B2 Nano-contacted magnetic memory device 失效
标题翻译：纳米磁记忆装置
公开(公告)号：US07408802B2
公开(公告)日：2008-08-05
申请号：US10577216
申请日：2004-10-26
申请人： Yuankai Zheng , Yihong Wu
发明人： Yuankai Zheng , Yihong Wu
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , H01L27/228 , H01L43/08
摘要： A magnetic memory device includes a plurality of transistors (316, 317) formed on a substrate and a common magnetic memory block (312) including a multiple effective magnetoresistive elements (318, 319), a ferromagnetic recording (312), a non-magnetic space (232), and a free magnetic reading (322) layer formed above the transistors (316, 317). An extended common digital line (315) is located above a common magnetic memory block (312) which is electrically connected with a respective source/drain electrode of the transistors (316, 317) through each a contact at a respective active area. The specific magnetization state of the ferromagnetic recording layer at the active areas can be changed by a heating process and applying an external field induced from the common digital line (315), the bit (309, 311) or word (307) lines. The change in resistance of the effective magnetoresistive element (318, 319) can be detected by means of changing the magnetization state of the free magnetic reacting layer during reading, thus a smaller switching field is required.
摘要翻译：一种磁存储器件包括形成在衬底上的多个晶体管（316,317）和包括多个有效磁阻元件（318,319），铁磁记录（312），非磁性的共用磁存储块（312）空间（232）和形成在晶体管（316,317）上方的自由磁读取（322）层。扩展的公共数字线路（315）位于公共磁存储器块（312）的上方，该公共磁存储器块通过每个相应有源区域上的触点与晶体管（316,317）的相应源极/漏极电连接。可以通过加热处理并施加从公共数字线（315），位（309,311）或字（307）线引起的外部场来改变有源区上的铁磁记录层的特定磁化状态。可以通过在读取期间改变自由磁反应层的磁化状态来检测有效磁阻元件（318,319）的电阻变化，因此需要较小的开关场。

6. 发明授权

US07313780B2 System and method for designing semiconductor photomasks 有权
标题翻译：设计半导体光掩模的系统和方法
公开(公告)号：US07313780B2
公开(公告)日：2007-12-25
申请号：US11078820
申请日：2005-03-10
申请人： Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
发明人： Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A trial semiconductor photomask design having discontinuity points is provided, and each of the discontinuity points is treated as simulated light sources. Simulated light from each of the simulated light sources is focused, and a composite image intensity of the focused simulated light is calculated to verify the trial semiconductor photomask design. The trial semiconductor photomask design is sharpened. A photomask design specification is generated for use in fabricating such a photomask.
摘要翻译：提供具有不连续点的试验半导体光掩模设计，将每个不连续点视为模拟光源。聚焦每个模拟光源的模拟光，并计算聚焦模拟光的合成图像强度，以验证试验半导体光掩模设计。试制半导体光掩模设计锐化。生成光掩模设计规范用于制造这种光掩模。

7. 发明申请

US20070109838A1 Magnetic memory device 有权
公开(公告)号：US20070109838A1
公开(公告)日：2007-05-17
申请号：US10575970
申请日：2004-10-12
申请人： Yuankai Zheng , Yihong Wu
发明人： Yuankai Zheng , Yihong Wu
IPC分类号： G11C11/00
CPC分类号： G11C11/16 , G11C11/15
摘要： A memory cell (310) for a magnetic memory device (300) includes a free layer (311), a cap layer, an antiferromagnetic layer, and a synthetic antiferromagnetic layer which comprises two or more than two ferromagnetic layers that are antiferromagnetically coupled through non-magnetic space layers. The synthetic antiferromagnetic layer is pinned by antiferromagnetic layer. The antiferromagnetic layer and the synthetic antiferromagnetic layer form a synthetic antiferromagnetic pinned (SAFP) recording layer. The magnetization of the SAFP recording layer can be changed by combining a heating process and an external field induced from currents flowing along the bit line (320) and the word line (330). Therefore, a MRAM with high density, high thermal stability, low power dissipation and high heat tolerance can be achieved after introducing the SAFP recording layer due to the high volume and anisotropy energy of the SAFP recording layer.

8. 发明申请

US20050135004A1 Epitaxial oxide cap layers for enhancing GMR performance 失效
标题翻译：用于增强GMR性能的外延氧化物盖层
公开(公告)号：US20050135004A1
公开(公告)日：2005-06-23
申请号：US10741436
申请日：2003-12-19
申请人： Wen-yaung Lee , Jinshan Li , Kebin Li , Yihong Wu
发明人： Wen-yaung Lee , Jinshan Li , Kebin Li , Yihong Wu
IPC分类号： G11B5/187 , G11B5/39
CPC分类号： G11B5/39 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171 , Y10T428/1193 , Y10T428/265
摘要： A magnetic head and magnetic storage system containing such a head, the head including a free layer and a layer of metal oxide substantially epitaxially formed relative to the free layer. Preferably, the layer of metal oxide is a crystalline structure, and is of ZnO.
摘要翻译：包含这种头部的磁头和磁存储系统，头部包括自由层和相对于自由层基本上外延形成的金属氧化物层。优选地，金属氧化物层是结晶结构，并且是ZnO。

9. 发明授权

US07486548B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US07486548B2
公开(公告)日：2009-02-03
申请号：US10553223
申请日：2003-04-16
申请人： Yuankai Zheng , Yihong Wu
发明人： Yuankai Zheng , Yihong Wu
IPC分类号： G11C11/14
CPC分类号： G11C11/16
摘要： A memory cell for a magnetic memory device comprising a first hard magnetic later having a first fixed magnetization vector; a second hard magnetic later having a second fixed magnetization vector; a first soft magnetic layer having a first alterable magnetization vector and disposed adjacent to the first hard magnetic layer and a second soft magnetic layer having a second alterable magnetization vector and disposed adjacent to the second hard magnetic layer, the first and the second soft magnetic layers are magnetostatically coupled antiparallel to each other to form a flux-closed structure. An electrically conductive layer is disposed between the two soft magnetic layers for passing an electric current therethrough to perform the read and write operations. A magnetic memory device made thereof possesses a higher thermal stability against external thermal fluctuations and in the meantime has a lower power dissipation in writing operations.
摘要翻译：一种用于磁存储器件的存储单元，包括具有第一固定磁化矢量的第一硬磁体; 稍后具有第二固定磁化矢量的第二硬磁体; 具有第一可变磁化矢量并且邻近第一硬磁层设置的第一软磁层和具有第二可变磁化矢量并且邻近第二硬磁层设置的第二软磁层，第一软磁层和第二软磁层相互平行地并联地形成磁通闭合结构。在两个软磁性层之间设置导电层，用于使电流通过其中以执行读取和写入操作。由其制成的磁存储器具具有较高的热稳定性以抵抗外部热波动，并且同时在写入操作中具有较低的功耗。

10. 发明申请

US20060206852A1 System and method for designing semiconductor photomasks 有权
标题翻译：设计半导体光掩模的系统和方法
公开(公告)号：US20060206852A1
公开(公告)日：2006-09-14
申请号：US11078820
申请日：2005-03-10
申请人： Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
发明人： Andrew Khoh , Byong-Il Choi , Lap Chan , Ganesh Samudra , Yihong Wu
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A trial semiconductor photomask design having discontinuity points is provided, and each of the discontinuity points is treated as simulated light sources. Simulated light from each of the simulated light sources is focused, and a composite image intensity of the focused simulated light is calculated to verify the trial semiconductor photomask design. The trial semiconductor photomask design is sharpened. A photomask design specification is generated for use in fabricating such a photomask.
摘要翻译：提供具有不连续点的试验半导体光掩模设计，将每个不连续点视为模拟光源。聚焦每个模拟光源的模拟光，并计算聚焦模拟光的合成图像强度，以验证试验半导体光掩模设计。试制半导体光掩模设计锐化。生成光掩模设计规范用于制造这种光掩模。

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