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1. 发明申请

US20120280196A1 ELECTROFORMING FREE MEMRISTOR 有权
标题翻译：电动自由仪器
公开(公告)号：US20120280196A1
公开(公告)日：2012-11-08
申请号：US13383994
申请日：2010-01-29
申请人： Jianhua Yang , Gilberto Medelros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Medelros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1608 , H01L45/1641
摘要： An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material (112) and reactive particles (114) configured to react with the switching material during a fabrication process of the memristor to form one or more conductance channels 120 in the switching layer.
摘要翻译：无电存储器（100）包括第一电极（102），与第一电极间隔开的第二电极（104）和位于第一电极和第二电极之间的开关层（110）。开关层由开关材料（112）和反应性颗粒（114）的矩阵形成，反应性颗粒（114）构造成在忆阻器的制造过程期间与开关材料反应，以在开关层中形成一个或多个导电通道120。

2. 发明申请

US20120249252A1 OSCILLATOR CIRCUITRY HAVING NEGATIVE DIFFERENTIAL RESISTANCE 有权
标题翻译：具有负面差分电阻的振荡器电路
公开(公告)号：US20120249252A1
公开(公告)日：2012-10-04
申请号：US13078595
申请日：2011-04-01
申请人： Julien Borghetti , Matthew D. Pickett , Gilberto Medelros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
发明人： Julien Borghetti , Matthew D. Pickett , Gilberto Medelros Ribeiro , Wei Yi , Jianhua Yang , Minxian Max Zhang
IPC分类号： H03B7/00
CPC分类号： H03B7/00
摘要： Circuitry is provided that closely emulates biological neural responses. Two astable multivibrator circuits (AMCs), each including a negative differential resistance device, are coupled in series-circuit relationship. Each AMC is characterized by a distinct voltage-dependant time constant. The circuitry exhibits oscillations in electrical current when subjected to a voltage equal to or greater than a threshold value. Various oscillating waveforms can be produced in accordance with voltages applied to the circuitry.
摘要翻译：提供了密切仿效生物神经反应的电路。两个不连续的多谐振荡器电路（AMC），每个包括一个负差分电阻器件，以串联电路的关系耦合。每个AMC的特征在于不同的电压相关时间常数。当经受等于或大于阈值的电压时，该电路表现出电流的振荡。可以根据施加到电路的电压来产生各种振荡波形。

3. 发明申请

US20140145142A1 MEMRISTOR STRUCTURE WITH A DOPANT SOURCE 有权
标题翻译：具有铒源的电容结构
公开(公告)号：US20140145142A1
公开(公告)日：2014-05-29
申请号：US14233075
申请日：2011-07-20
申请人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/1658 , G11C13/0007 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要翻译：公开了一种包括掺杂剂源的忆阻器。该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子开关材料。还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

4. 发明授权

US08546785B2 Memristive device 有权
标题翻译：忆阻器
公开(公告)号：US08546785B2
公开(公告)日：2013-10-01
申请号：US12751977
申请日：2010-03-31
申请人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
发明人： Jianhua Yang , Feng Miao , Wei Wu , Shih-Yuan Wang , R. Stanley Williams
IPC分类号： H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/16
摘要： A memristive device includes a first electrode and a second electrode crossing the first electrode at a non-zero angle. An active region is disposed between the first and second electrodes. The active region has defects therein. Graphene or graphite is disposed between the active region and the first electrode and/or between the active region and the second electrode.
摘要翻译：忆阻器包括第一电极和第二电极，其以非零角度与第一电极交叉。有源区设置在第一和第二电极之间。活性区域有缺陷。石墨烯或石墨设置在有源区和第一电极之间和/或有源区和第二电极之间。

5. 发明申请

US20130175497A1 DEVICE STRUCTURE FOR LONG ENDURANCE MEMRISTORS 有权
标题翻译：长寿命仪器的器件结构
公开(公告)号：US20130175497A1
公开(公告)日：2013-07-11
申请号：US13822227
申请日：2010-09-27
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/14 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/1608
摘要： A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.
摘要翻译：忆阻器包括由第一金属形成的第一电极，由第二材料形成的第二电极，其中第二材料包括与第一金属不同的材料，以及位于第一电极和第二电极之间的开关层。开关层由包括第一金属和第二非金属材料的第一材料的组合物形成，其中开关层与第一电极直接接触，并且其中至少一个导电沟道被构造成形成在第一金属开关层从第一金属和第二非金属材料之间的相互作用。

6. 发明授权

US08450711B2 Semiconductor memristor devices 有权
标题翻译：半导体忆阻器
公开(公告)号：US08450711B2
公开(公告)日：2013-05-28
申请号：US13142582
申请日：2009-01-26
申请人： R. Stanley Williams , Jianhua Yang , Duncan Stewart
发明人： R. Stanley Williams , Jianhua Yang , Duncan Stewart
IPC分类号： H01L29/02
CPC分类号： G11C13/0007 , G11C13/003 , G11C2213/31 , G11C2213/51 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L27/2463 , H01L29/8615 , H01L45/08 , H01L45/1233 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/145 , H01L45/148
摘要： Various embodiments of the present invention are directed to electronic devices, which combine reconfigurable diode rectifying states with nonvolatile memristive switching. In one aspect, an electronic device (210,230,240) comprises an active region (212) sandwiched between a first electrode (104) and a second electrode (106). The active region includes two or more semiconductor layers and at least one dopant that is capable of being selectively positioned within the active region to control the flow of charge carriers through the device.
摘要翻译：本发明的各种实施例涉及将可重构二极管整流状态与非易失性忆阻转换组合的电子器件。一方面，电子设备（210,230,240）包括夹在第一电极（104）和第二电极（106）之间的有源区（212）。有源区域包括两个或更多个半导体层和至少一个能够选择性地定位在有源区域内以控制电荷载流子通过该器件的流动的掺杂剂。

7. 发明申请

US20130106462A1 Field-programmable analog array with memristors 有权
标题翻译：带忆阻器的现场可编程模拟阵列
公开(公告)号：US20130106462A1
公开(公告)日：2013-05-02
申请号：US13281438
申请日：2011-10-26
申请人： Jianhua Yang , Muhammad Shakeel Qureshi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Muhammad Shakeel Qureshi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H03K19/177
CPC分类号： H03K19/177
摘要： A field-programmable analog array (FPAA) includes a digital signal routing network, an analog signal routing network, switch elements to interconnect the digital signal routing network with the analog signal routing network, and a configurable analog block (CAB) connected to the analog signal routing network and having a programmable resistor array. The switch elements are implemented via digital memristors, the programmable resistor array is implemented via analog memristors, and/or antifuses within one or more of the digital signal routing network and the analog signal routing network are implemented via digital memristors.
摘要翻译：现场可编程模拟阵列（FPAA）包括数字信号路由网络，模拟信号路由网络，将数字信号路由网络与模拟信号路由网络互连的开关元件，以及连接到模拟信号的可配置模拟块（CAB）信号路由网络并具有可编程电阻器阵列。开关元件通过数字忆阻器实现，可编程电阻器阵列通过模拟忆阻器实现，并且/或数字信号路由网络和模拟信号路由网络内的反熔丝通过数字忆阻器来实现。

8. 发明授权

US09224949B2 Memristive elements that exhibit minimal sneak path current 有权
标题翻译：具有极小潜行路电流的忆阻元件
公开(公告)号：US09224949B2
公开(公告)日：2015-12-29
申请号：US14001835
申请日：2011-02-28
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/06 , H01L27/10 , H01L27/24
CPC分类号： H01L45/145 , H01L27/0688 , H01L27/101 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
摘要翻译：提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区，所述有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的两个开关层。还提供还包括设置在第一电极和第二电极之间的两个有源区，以及设置在两个有源区之间并与之电接触的第三电极的还忆元件。每个有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的开关层。还提供了包括忆阻元件在内的多层结构。

9. 发明授权

US09165645B2 High-reliability high-speed memristor 有权
标题翻译：高可靠性高速忆阻器
公开(公告)号：US09165645B2
公开(公告)日：2015-10-20
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R Stanley Williams
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel. In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区相对于传导通道横向设置，并且用作导电通道的移动离子的源/汇。在切换操作中，在电场和热效应的协同驱动力下，移动离子被移入或移出横向设置的储存区，以改变导电通道中的移动离子的浓度，以改变导电通道费米玻璃材料。

10. 发明授权

US09024285B2 Nanoscale switching devices with partially oxidized electrodes 有权
标题翻译：具有部分氧化电极的纳米开关器件
公开(公告)号：US09024285B2
公开(公告)日：2015-05-05
申请号：US13636814
申请日：2010-04-19
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L47/00 , H01L45/00 , H01L27/24
CPC分类号： H01L45/08 , H01L27/2463 , H01L45/1253 , H01L45/146 , Y10S438/90
摘要： A nanoscale switching device is provided. The device comprises: a first electrode of a nanoscale width; a second electrode of a nanoscale width; an active region disposed between the first and second electrodes, the active region having a non-conducting portion comprising an electronically semiconducting or nominally insulating and a weak ionic conductor switching material capable of carrying a species of dopants and transporting the dopants under an electric field and a source portion that acts as a source or sink for the dopants; and an oxide layer either formed on the first electrode, between the first electrode and the active region or formed on the second electrode, between the second electrode and the active region. A crossbar array comprising a plurality of the nanoscale switching devices is also provided. A process for making at least one nanoscale switching device is further provided.
摘要翻译：提供了纳米尺度的开关装置。该装置包括：纳米级宽度的第一电极; 纳米级宽度的第二电极; 有源区域设置在第一和第二电极之间，有源区域具有非导电部分，其包括电子半导体或名义绝缘以及能够承载一种掺杂剂并在电场下传输掺杂剂的弱离子导体开关材料，以及用作掺杂剂的源或汇的源部分; 以及形成在第一电极之间，第一电极和有源区之间或形成在第二电极上的第二电极和有源区之间的氧化物层。还提供了包括多个纳米级切换装置的交叉开关阵列。还提供了制造至少一个纳米级切换装置的方法。

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