专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120280196A1 ELECTROFORMING FREE MEMRISTOR 有权
标题翻译：电动自由仪器
公开(公告)号：US20120280196A1
公开(公告)日：2012-11-08
申请号：US13383994
申请日：2010-01-29
申请人： Jianhua Yang , Gilberto Medelros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Medelros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/146 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/1608 , H01L45/1641
摘要： An electroforming free memristor (100) includes a first electrode (102), a second electrode (104) spaced from the first electrode, and a switching layer (110) positioned between the first electrode and the second electrode. The switching layer is formed of a matrix of a switching material (112) and reactive particles (114) configured to react with the switching material during a fabrication process of the memristor to form one or more conductance channels 120 in the switching layer.
摘要翻译：无电存储器（100）包括第一电极（102），与第一电极间隔开的第二电极（104）和位于第一电极和第二电极之间的开关层（110）。开关层由开关材料（112）和反应性颗粒（114）的矩阵形成，反应性颗粒（114）构造成在忆阻器的制造过程期间与开关材料反应，以在开关层中形成一个或多个导电通道120。

2. 发明授权

US09224821B2 Customizable nonlinear electrical devices 有权
标题翻译：可定制的非线性电气设备
公开(公告)号：US09224821B2
公开(公告)日：2015-12-29
申请号：US14385544
申请日：2012-04-26
申请人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L29/24 , H01L29/47 , H01L29/861 , H01L29/872 , B82Y10/00 , H01L27/102 , G11C13/00 , H01L27/24 , H01L21/02 , H01L29/8605 , H01L29/92 , H01L29/06
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译：在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。金属氧化物层包括共存的金属和金属氧化物的导电混合物。还提供了形成非线性电气装置的方法。

3. 发明授权

US09178153B2 Memristor structure with a dopant source 有权
标题翻译：具有掺杂剂源的忆阻器结构
公开(公告)号：US09178153B2
公开(公告)日：2015-11-03
申请号：US14233075
申请日：2011-07-20
申请人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC分类号： H01L45/00 , G11C13/00
CPC分类号： H01L45/1658 , G11C13/0007 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要翻译：公开了一种包括掺杂剂源的忆阻器。该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子开关材料。还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

4. 发明申请

US20140346426A1 Memristor with Channel Region in Thermal Equilibrium with Containing Region 有权
标题翻译：带通道区的忆阻器与包含区域的热平衡
公开(公告)号：US20140346426A1
公开(公告)日：2014-11-27
申请号：US14371492
申请日：2012-02-29
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/085 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/1246 , H01L45/146 , H01L45/1641 , H01L45/165
摘要： A memristor with a channel region in thermal equilibrium with a containing region. The channel region has a variable concentration of mobile ions. The containing region, formed of stoichiometric crystalline material, contains and is in thermal equilibrium with the channel region.
摘要翻译：具有与含有区域的热平衡的通道区域的忆阻器。通道区域具有可变浓度的移动离子。由化学计量结晶材料形成的含有区域含有和与通道区域处于热平衡状态。

5. 发明授权

US08891284B2 Memristors based on mixed-metal-valence compounds 有权
标题翻译：基于混合金属化合物的忆阻器
公开(公告)号：US08891284B2
公开(公告)日：2014-11-18
申请号：US13383572
申请日：2009-09-04
申请人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
发明人： R. Stanley Williams , Jianhua Yang , Matthew Pickett , Gilberto Ribeiro , John Paul Strachan
IPC分类号： G11C11/00 , H01L21/8239 , H01L45/00 , G11C13/00 , H01L29/861
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/003 , G11C2213/55 , G11C2213/56 , G11C2213/72 , G11C2213/73 , H01L29/8615 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： A memristor based on mixed-metal-valence compounds comprises: a first electrode; a second electrode; a layer of a mixed-metal-valence phase in physical contact with at least one layer of a fully oxidized phase. The mixed-metal-valence phase is essentially a condensed phase of dopants for the fully oxidized phase that drift into and out of the fully oxidized phase in response to an applied electric field. One of the first and second electrodes is in electrical contact with either the layer of the mixed-metal-valence phase or a layer of a fully oxidized phase and the other is in electrical contact with the layer (or other layer) of the fully oxidized phase. The memristor is prepared by forming in either order the layer of the mixed-metal-valence phase and the layer of the fully oxidized phase, one on the other. A reversible diode and an ON-switched diode are also provided. A method of operating the memristor is further provided.
摘要翻译：基于混合金属价化合物的忆阻器包括：第一电极; 第二电极; 与至少一层完全氧化相物理接触的混合金属价态相的一层。混合金属价相基本上是完全氧化相的掺杂剂的凝聚相，其响应于施加的电场漂移进入和离开完全氧化相。第一和第二电极之一与混合金属化合物相的层或完全氧化相的层电接触，另一个与完全氧化的层（或其它层）电接触相。忆阻器通过以任何顺序形成混合金属价态相和完全氧化相的层来制备，另一方面。还提供了可逆二极管和ON开关二极管。还提供了一种操作忆阻器的方法。

6. 发明申请

US20140112059A1 HIGH-RELIABILITY HIGH-SPEED MEMRISTOR 有权
标题翻译：高可靠性高速电容器
公开(公告)号：US20140112059A1
公开(公告)日：2014-04-24
申请号：US14127873
申请日：2011-06-24
申请人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Feng Miao , Jianhua Yang , John Paul Strachan , Wei Yi , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： G11C13/00 , H01L45/00
CPC分类号： H01L45/08 , G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L45/1233 , H01L45/141 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149
摘要： A memristor has a first electrode, a second electrode parallel to the first electrode, and a switching layer disposing between the first and second electrodes. The switching layer contains a conduction channel and a reservoir zone. The conduction channel has a Fermi glass material with a variable concentration of mobile ions. The reservoir zone is laterally disposed relative to the conduction channel, and functions as a source/sink of mobile ions for the conduction channel In the switching operation, under the cooperative driving force of both electric field and thermal effects, the mobile ions are moved into or out of the laterally disposed reservoir zone to vary the concentration of the mobile ions in the conduction channel to change the conductivity of the Fermi glass material.
摘要翻译：忆阻器具有第一电极，平行于第一电极的第二电极和设置在第一和第二电极之间的开关层。开关层包含导电通道和储存区。导电通道具有可变浓度的移动离子的费米玻璃材料。储存区域相对于导电通道横向设置，并且用作导电通道的移动离子的源/汇。在开关操作中，在电场和热效应的协同驱动力下，将移动离子移入或离开横向设置的储存区，以改变导电通道中的可移动离子的浓度，以改变费米玻璃材料的导电性。

7. 发明申请

US20130242637A1 Memelectronic Device 有权
标题翻译：电子设备
公开(公告)号：US20130242637A1
公开(公告)日：2013-09-19
申请号：US13424034
申请日：2012-03-19
申请人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Byungjoon Choi , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： G11C11/00 , H01L47/00
CPC分类号： G11C13/0002 , G11C13/0004 , G11C13/0007 , G11C13/003 , G11C13/0069 , G11C2013/0073 , G11C2213/15 , H01L27/2463 , H01L45/08 , H01L45/12 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/148 , H01L45/149
摘要： A memelectronic device may have a first and a second electrode spaced apart by a plurality of materials. A first material may have a memory characteristic exhibited by the first material maintaining a magnitude of an electrically controlled physical property after discontinuing an electrical stimulus on the first material. A second material may have an auxiliary characteristic.
摘要翻译：电子器件可以具有由多个材料隔开的第一和第二电极。第一材料可以具有在第一材料上停止电刺激之后第一材料表现出的存储特性，其维持电控物理性质的大小。第二种材料可能具有辅助特性。

8. 发明授权

US08437072B2 Individually addressable nano-scale mechanical actuators 有权
标题翻译：可单独寻址的纳米级机械执行器
公开(公告)号：US08437072B2
公开(公告)日：2013-05-07
申请号：US13256256
申请日：2009-06-30
申请人： Jianhua Yang , R. Stanley Williams , William Tong
发明人： Jianhua Yang , R. Stanley Williams , William Tong
IPC分类号： G02B26/00
CPC分类号： F03G7/005
摘要： An addressable nano-scale mechanical actuator is formed at the intersection of two nanowires. The actuator has an active region disposed between the two nanowires, which form the electrodes of the actuator. The active region contains an electrolytically decomposable material. When an activation voltage is applied to the electrodes, the material releases a gas that forms a bubble at one electrode, causing a bulging of a top surface of the actuator. The bulging may be used, via mechanical coupling, to provide mechanical actuation on a nanometer scale. The nanowires may be arranged in a two-dimensional array to provide an array of individually addressable actuators.
摘要翻译：在两个纳米线的交叉处形成可寻址的纳米级机械致动器。致动器具有设置在两个纳米线之间的有源区域，其形成致动器的电极。活性区域含有电解质的材料。当激活电压施加到电极时，材料释放在一个电极处形成气泡的气体，导致致动器的顶表面膨胀。可以通过机械耦合使用凸起来提供纳米尺度的机械致动。纳米线可以被布置成二维阵列以提供单独可寻址致动器的阵列。

9. 发明授权

US08415652B2 Memristors with a switching layer comprising a composite of multiple phases 有权
标题翻译：具有包括多相复合材料的开关层的忆阻器
公开(公告)号：US08415652B2
公开(公告)日：2013-04-09
申请号：US12819763
申请日：2010-06-21
申请人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Gilberto Ribeiro , R. Stanley Williams
IPC分类号： H01L29/02
CPC分类号： H01L27/24 , G11C13/0007 , G11C2213/52 , H01L45/04 , H01L45/145
摘要： A memristor with a switching layer that includes a composite of multiple phases is disclosed. The memristor comprises: a first electrode; a second electrode spaced from the first electrode; and a switching layer positioned between the first electrode and the second electrode, the switching layer comprising the multi-phase composite system that comprises a first majority phase comprising a relatively insulating matrix of a switching material and a second minority phase comprising a relatively conducting material for forming at least one conducting channel in the switching layer during a fabrication process of the memristor. A method of making the memristor and a crossbar employing the memristor are also disclosed.
摘要翻译：公开了具有包括多相复合的开关层的忆阻器。忆阻器包括：第一电极; 与所述第一电极间隔开的第二电极; 以及位于所述第一电极和所述第二电极之间的开关层，所述开关层包括所述多相复合系统，所述多相复合系统包括第一多数相，所述第一多数相包括开关材料的相对绝缘的矩阵，以及包括相对导电材料的第二少数相，在忆阻器的制造过程中，在开关层中形成至少一个导电沟道。还公开了制造忆阻器和使用忆阻器的横杆的方法。

10. 发明申请

US20120223286A1 ELECTROFORMING-FREE NANOSCALE SWITCHING DEVICE 有权
标题翻译：无电极纳米开关器件
公开(公告)号：US20120223286A1
公开(公告)日：2012-09-06
申请号：US13259173
申请日：2009-07-30
申请人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
发明人： Jianhua Yang , Shih-Yuan Wang , R. Stanley Williams , Alexandre Bratkovski , Gilberto Ribeiro
IPC分类号： H01L45/00
CPC分类号： H01L29/417 , B82Y10/00 , H01L27/101 , H01L27/2463 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146
摘要： A nanoscale switching device is constructed such that an electroforming process is not needed to condition the device for normal switching operations. The switching device has an active region disposed between two electrodes. The active region has at least one switching layer formed of a switching material capable of transporting dopants under an electric field, and at least one conductive layer formed of a dopant source material containing dopants that can drift into the switching layer under an electric field. The switching layer has a thickness about 6 nm or less.
摘要翻译：构造纳米级开关器件，使得不需要电铸工艺来调节器件以进行正常的开关操作。开关装置具有设置在两个电极之间的有源区域。有源区具有由能够在电场下输送掺杂剂的开关材料形成的至少一个开关层，以及由掺杂剂源材料形成的至少一个导电层，所述掺杂剂源材料含有可在电场下漂移到开关层中的掺杂剂。开关层的厚度为6nm以下。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式