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1. 发明申请

US20140145142A1 MEMRISTOR STRUCTURE WITH A DOPANT SOURCE 有权
标题翻译：具有铒源的电容结构
公开(公告)号：US20140145142A1
公开(公告)日：2014-05-29
申请号：US14233075
申请日：2011-07-20
申请人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/1658 , G11C13/0007 , H01L45/04 , H01L45/08 , H01L45/085 , H01L45/1266 , H01L45/142 , H01L45/145 , H01L45/146 , H01L45/147
摘要： A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed.
摘要翻译：公开了一种包括掺杂剂源的忆阻器。该结构包括电极，包括导电材料的导电合金，掺杂剂源材料和掺杂剂，以及位于电极和导电合金之间的开关层，其中开关层包括电子半导体或标称绝缘和弱离子开关材料。还公开了一种用于制造包括掺杂剂源的忆阻器的方法。

2. 发明申请

US20130175497A1 DEVICE STRUCTURE FOR LONG ENDURANCE MEMRISTORS 有权
标题翻译：长寿命仪器的器件结构
公开(公告)号：US20130175497A1
公开(公告)日：2013-07-11
申请号：US13822227
申请日：2010-09-27
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/24
CPC分类号： H01L45/14 , G11C13/0007 , G11C2213/15 , G11C2213/32 , G11C2213/52 , H01L27/2463 , H01L27/2472 , H01L45/08 , H01L45/1233 , H01L45/145 , H01L45/146 , H01L45/147 , H01L45/148 , H01L45/149 , H01L45/1608
摘要： A memristor includes a first electrode formed of a first metal, a second electrode formed of a second material, wherein the second material comprises a different material from the first metal, and a switching layer positioned between the first electrode and the second electrode. The switching layer is formed of a composition of a first material comprising the first metal and a second nonmetal material, in which the switching layer is in direct contact with the first electrode and in which at least one conduction channel is configured to be formed in the switching layer from an interaction between the first metal and the second nonmetal material.
摘要翻译：忆阻器包括由第一金属形成的第一电极，由第二材料形成的第二电极，其中第二材料包括与第一金属不同的材料，以及位于第一电极和第二电极之间的开关层。开关层由包括第一金属和第二非金属材料的第一材料的组合物形成，其中开关层与第一电极直接接触，并且其中至少一个导电沟道被构造成形成在第一金属开关层从第一金属和第二非金属材料之间的相互作用。

3. 发明授权

US09224949B2 Memristive elements that exhibit minimal sneak path current 有权
标题翻译：具有极小潜行路电流的忆阻元件
公开(公告)号：US09224949B2
公开(公告)日：2015-12-29
申请号：US14001835
申请日：2011-02-28
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H01L45/00 , H01L27/06 , H01L27/10 , H01L27/24
CPC分类号： H01L45/145 , H01L27/0688 , H01L27/101 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
摘要翻译：提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区，所述有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的两个开关层。还提供还包括设置在第一电极和第二电极之间的两个有源区，以及设置在两个有源区之间并与之电接触的第三电极的还忆元件。每个有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的开关层。还提供了包括忆阻元件在内的多层结构。

4. 发明授权

US08711594B2 Asymmetric switching rectifier 有权
标题翻译：非对称开关整流器
公开(公告)号：US08711594B2
公开(公告)日：2014-04-29
申请号：US13212428
申请日：2011-08-18
申请人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC分类号： H02M7/06
CPC分类号： H02M7/06
摘要： An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
摘要翻译：非对称开关整流器包括第一开关装置，以在第一状态下允许电流流动并且阻止处于第二状态的电流和以头对头形式连接到所述第一开关装置的第二开关装置，所述第二开关装置切换以允许电流在第一状态下流动并且在第二状态下抑制电流。将所述开关器件转换到所述第一状态的第一电流不同于将所述开关器件转换到所述第二状态的第二电流。整流器还包括旁路段，以从所述第一开关器件和所述第二开关器件之间的中心电极抽取旁路电流。

5. 发明申请

US20150041751A1 CUSTOMIZABLE NONLINEAR ELECTRICAL DEVICES 有权
标题翻译：可定制非线性电气设备
公开(公告)号：US20150041751A1
公开(公告)日：2015-02-12
申请号：US14385544
申请日：2012-04-26
申请人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L29/24 , H01L21/02 , H01L29/861 , H01L45/00 , H01L29/8605 , H01L29/92
CPC分类号： H01L29/24 , B82Y10/00 , G11C13/0007 , G11C13/003 , G11C2213/15 , G11C2213/72 , G11C2213/73 , G11C2213/74 , H01L21/02425 , H01L21/02565 , H01L21/02631 , H01L27/1021 , H01L27/2418 , H01L27/2463 , H01L29/0676 , H01L29/247 , H01L29/47 , H01L29/8605 , H01L29/861 , H01L29/8616 , H01L29/872 , H01L29/92 , H01L45/00 , H01L45/08 , H01L45/1233 , H01L45/146 , H01L45/1625
摘要： In one example, a customizable nonlinear electrical device includes a first conductive layer, a second conductive layer, and a thin film metal-oxide layer sandwiched between the first conductive layer and the second conductive layer to form a first rectifying interface between the metal-oxide layer and the first conductive layer and a second rectifying interface between the metal-oxide layer and the second conductive layer. The metal-oxide layer includes an electrically conductive mixture of co-existing metal and metal oxides. A method forming a nonlinear electrical device is also provided.
摘要翻译：在一个示例中，可定制的非线性电气装置包括第一导电层，第二导电层和夹在第一导电层和第二导电层之间的薄膜金属氧化物层，以在金属氧化物之间形成第一整流界面层和第一导电层以及金属氧化物层和第二导电层之间的第二整流界面。金属氧化物层包括共存的金属和金属氧化物的导电混合物。还提供了形成非线性电气装置的方法。

6. 发明申请

US20140027705A1 MEMRISTOR CELL STRUCTURES FOR HIGH DENSITY ARRAYS 有权
标题翻译：高密度阵列的电容器结构
公开(公告)号：US20140027705A1
公开(公告)日：2014-01-30
申请号：US13560935
申请日：2012-07-27
申请人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L47/00 , H01L21/02
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1293 , H01L45/1675
摘要： A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
摘要翻译：忆阻器阵列包括下层交叉梁，与下部交叉梁交叉的上层交叉杆，夹在相交的横梁之间的忆阻单元以及分隔相邻的忆阻单元的孔。还提供了一种形成忆阻器阵列的方法。

7. 发明申请

US20130334485A1 MEMRISTIVE ELEMENTS THAT EXHIBIT MINIMAL SNEAK PATH CURRENT 有权
标题翻译：显示最小的路径流动的电磁元件
公开(公告)号：US20130334485A1
公开(公告)日：2013-12-19
申请号：US14001835
申请日：2011-02-28
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H01L45/00
CPC分类号： H01L45/145 , H01L27/0688 , H01L27/101 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode, the active region including two switching layers formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Memristive elements also are provided that include two active regions disposed between a first electrode and a second electrode, and a third electrode being disposed between and in electrical contact with both of the active regions. Each of the active regions include a switching layer formed of a switching material capable of carrying a species of dopants and a conductive layer formed of a dopant source material. Multilayer structures including the memristive elements also are provided.
摘要翻译：提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区，所述有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的两个开关层。还提供还包括设置在第一电极和第二电极之间的两个有源区，以及设置在两个有源区之间并与之电接触的第三电极的还忆元件。每个有源区包括由能够承载一种掺杂剂的开关材料和由掺杂剂源材料形成的导电层形成的开关层。还提供了包括忆阻元件在内的多层结构。

8. 发明申请

US20130044525A1 ASYMMETRIC SWITCHING RECTIFIER 有权
标题翻译：不对称开关整流器
公开(公告)号：US20130044525A1
公开(公告)日：2013-02-21
申请号：US13212428
申请日：2011-08-18
申请人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
发明人： Minxian Max Zhang , Jianhua Yang , R. Stanley Williams
IPC分类号： H02M7/04
CPC分类号： H02M7/06
摘要： An asymmetric switching rectifier includes a first switching device to allow electric current to flow while in a first state and inhibit electric current in a second state and a second switching device connected in a head-to-head formation to said first switching device, said second switching to allow electric current to flow while in a first state and inhibit electric current in a second state. A first electric current to turn said switching devices to said first state is different than a second electric current to turn said switching devices to said second state. The rectifier further includes a bypass segment to draw a bypass electric current from a center electrode between said first switching device and said second switching device.
摘要翻译：非对称开关整流器包括第一开关装置，以在第一状态下允许电流流动并且阻止处于第二状态的电流和以头对头形式连接到所述第一开关装置的第二开关装置，所述第二开关装置切换以允许电流在第一状态下流动并且在第二状态下抑制电流。将所述开关器件转换到所述第一状态的第一电流不同于将所述开关器件转换到所述第二状态的第二电流。整流器还包括旁路段，以从所述第一开关器件和所述第二开关器件之间的中心电极抽取旁路电流。

9. 发明授权

US09082533B2 Memristive element based on hetero-junction oxide 有权
标题翻译：基于异质结氧化物的忆阻元件
公开(公告)号：US09082533B2
公开(公告)日：2015-07-14
申请号：US14345293
申请日：2011-10-21
申请人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , R. Stanley Williams
IPC分类号： H05K1/16 , H05K7/00 , H01L47/00 , H01L29/06 , H01C10/00 , H01L45/00 , H01L27/24 , H01C10/16 , H05K1/18 , G11C13/00
CPC分类号： H01C10/00 , G11C13/003 , G11C2213/15 , G11C2213/55 , G11C2213/56 , G11C2213/71 , H01C10/16 , H01L27/2463 , H01L27/2481 , H01L45/08 , H01L45/1233 , H01L45/146 , H05K1/18
摘要： Memristive elements are provided that include an active region disposed between a first electrode and a second electrode. The active region includes an switching layer of a first metal oxide and a conductive layer of a second metal oxide, where a metal on of the first metal oxide differs from a metal ion of the second metal oxide. The memristive element exhibits a nonlinear current-voltage characteristic in the low resistance state based on the oxide hetero-junction between the first metal oxide and the second metal oxide. Multilayer structures that include the memristive elements also are provided.
摘要翻译：提供了忆阻元件，其包括设置在第一电极和第二电极之间的有源区。有源区包括第一金属氧化物的开关层和第二金属氧化物的导电层，其中第一金属氧化物上的金属与第二金属氧化物的金属离子不同。忆阻元件基于第一金属氧化物和第二金属氧化物之间的氧化物异质结，在低电阻状态下呈现非线性电流 - 电压特性。还提供了包括忆阻元件的多层结构。

10. 发明授权

US08921960B2 Memristor cell structures for high density arrays 有权
标题翻译：用于高密度阵列的忆阻单体结构
公开(公告)号：US08921960B2
公开(公告)日：2014-12-30
申请号：US13560935
申请日：2012-07-27
申请人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
发明人： Jianhua Yang , Minxian Max Zhang , Gilberto Medeiros Ribeiro , R. Stanley Williams
IPC分类号： H01L29/86
CPC分类号： H01L45/04 , H01L27/2463 , H01L45/1233 , H01L45/1293 , H01L45/1675
摘要： A memristor array includes a lower layer of crossbars, upper layer of crossbars intersecting the lower layer of crossbars, memristor cells interposed between intersecting crossbars, and pores separating adjacent memristor cells. A method forming a memristor array is also provided.
摘要翻译：忆阻器阵列包括下层交叉梁，与下部交叉梁交叉的上层交叉杆，夹在相交的横梁之间的忆阻单元以及分隔相邻的忆阻单元的孔。还提供了一种形成忆阻器阵列的方法。

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