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1. 发明授权

US06821448B2 Methods for producing thin film magnetic devices having increased orientation ratio 失效
标题翻译：具有提高取向比的薄膜磁性装置的制造方法
公开(公告)号：US06821448B2
公开(公告)日：2004-11-23
申请号：US09745182
申请日：2000-12-22
申请人： Jian Ping Wang , Lei Huang , Tow Chong Chong
发明人： Jian Ping Wang , Lei Huang , Tow Chong Chong
IPC分类号： B44C122
CPC分类号： G11B5/84 , G11B5/732 , G11B5/7325
摘要： A method of producing a thin film magnetic device comprising forming a thin film of magnetic material over a surface of a substrate having a controlled surface topography, wherein the surface of the substrate is first subject to isotropic etching so as to increase the capacity of the substrate surface to induce a high orientation ratio in a thin film of magnetic material formed over the substrate surface without a reduction in the smoothness of the substrate; and a method of modifying a thin film magnetic device comprising a thin film of a magnetic material, the method comprising the step of subjecting a surface of the thin film magnetic device having a controlled surface topology to isotropic etching so as to increase the orientation ratio of the thin film magnetic device without reducing the smoothness of the surface of the thin film magnetic device.
摘要翻译：一种制造薄膜磁性器件的方法，包括在具有受控表面形貌的衬底的表面上形成磁性材料薄膜，其中首先对衬底的表面进行各向同性蚀刻，以增加衬底的容量表面以在衬底表面上形成的磁性材料的薄膜中引起高取向比，而不降低衬底的平滑度; 以及修改包括磁性材料薄膜的薄膜磁性装置的方法，所述方法包括以下步骤：对具有受控表面拓扑结构的薄膜磁性装置的表面进行各向同性蚀刻，以增加取向比薄膜磁性装置，而不会降低薄膜磁性装置表面的平滑度。

2. 发明授权

US06500497B1 Method of magnetically patterning a thin film by mask-controlled local phase transition 失效
标题翻译：通过掩模控制的局部相变磁化图案化薄膜的方法
公开(公告)号：US06500497B1
公开(公告)日：2002-12-31
申请号：US10126007
申请日：2002-04-19
申请人： Jian-Ping Wang , Tie Jun Zhou , Tow Chong Chong
发明人： Jian-Ping Wang , Tie Jun Zhou , Tow Chong Chong
IPC分类号： B05D128
CPC分类号： B82Y25/00 , B82Y40/00 , G11B5/7325 , G11B5/855 , H01F41/302 , Y10S977/701 , Y10S977/778 , Y10S977/838 , Y10S977/888 , Y10S977/95
摘要： A method of producing a patterned magnetic nanostructure is disclosed. The method includes providing a substrate having a non-magnetic single layer or multi layer film that can be converted into a magnetic state by annealing and/or mixing. The method further includes positioning a mask having a desired pattern and resolution associated with the patterned magnetic nanostructure on or over the film. The method additionally includes subjecting the mask-covered substrate to a beam of radiation (focussed or unfocussed) having sufficient energy to locally anneal and/or mix the non-magnetic or weak-magnetic single-layer or multi layer film. Because of the mask effect, only the desired portions of the non-magnetic film are exposed to the beam of radiation. As such, the desired portions of the non-magnetic film are changed from a non-magnetic to a magnetic state to produce an array of magnetic elements in a non-magnetic matrix. The size of each magnetic element is dependent on the resolution of mask.
摘要翻译：公开了一种制造图案化磁性纳米结构的方法。该方法包括提供具有非磁性单层或多层膜的基板，其可以通过退火和/或混合而转换成磁状态。该方法还包括将具有与图案化的磁性纳米结构相关联的期望图案和分辨率的掩模定位在膜上或上方。该方法另外包括使掩模覆盖的基板经受具有足够能量以局部退火和/或混合非磁性或弱磁性单层或多层膜的辐射束（聚焦或未聚焦）。由于掩模效应，只有非磁性膜的期望部分暴露于辐射束。因此，非磁性膜的期望部分从非磁性变化到磁状态，以产生非磁性矩阵中的磁性元件阵列。每个磁性元件的尺寸取决于掩模的分辨率。

3. 发明授权

US07960757B2 Magneto-electric field effect transistor for spintronic applications 失效
标题翻译：用于自旋电子应用的磁电效应晶体管
公开(公告)号：US07960757B2
公开(公告)日：2011-06-14
申请号：US11587445
申请日：2004-04-27
申请人： Mansoor B A Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
发明人： Mansoor B A Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , H01F10/16
摘要： The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
摘要翻译：本发明涉及一种磁电场效应晶体管，其包括沟道区，源极连接到沟道区的一侧并适于将电子注入沟道区，漏极连接到沟道区的相对侧，以及适用于检测自旋极化电子; 以及包括至少一个包含四个磁性元件的磁双对元件的门，每个磁性元件适于将磁场引入沟道区，其中磁双对元件的总感应磁场可控制为基本为零，以及其中所述栅极还适于将电场引入所述沟道区域。

4. 发明授权

US08599607B2 Diode and memory device having a diode 失效
标题翻译：具有二极管的二极管和存储器件
公开(公告)号：US08599607B2
公开(公告)日：2013-12-03
申请号：US13324242
申请日：2011-12-13
申请人： Wendong Song , Luping Shi , Yun Fook Thomas Liew , Tow Chong Chong
发明人： Wendong Song , Luping Shi , Yun Fook Thomas Liew , Tow Chong Chong
IPC分类号： G11C17/06
CPC分类号： H01L45/1233 , G11C13/0004 , G11C13/003 , G11C2213/15 , G11C2213/72 , H01L27/1021 , H01L45/06 , H01L45/144
摘要： A diode and a memory device having a diode are provided. The diode includes a semiconductor layer and phase change material layer. The semiconductor layer and the phase change material layer have different energy bandgaps and different carrier concentrations such that an isotype heterojunction is formed at a boundary interface between the semiconductor layer and the phase change material layer.
摘要翻译：提供二极管和具有二极管的存储器件。二极管包括半导体层和相变材料层。半导体层和相变材料层具有不同的能带隙和不同的载流子浓度，使得在半导体层和相变材料层之间的边界界面处形成同种异质结。

5. 发明申请

US20120147668A1 Diode and Memory Device Having a Diode 失效
标题翻译：具有二极管的二极管和存储器件
公开(公告)号：US20120147668A1
公开(公告)日：2012-06-14
申请号：US13324242
申请日：2011-12-13
申请人： Wendong SONG , Luping Shi , Yun Fook Thomas Liew , Tow Chong Chong
发明人： Wendong SONG , Luping Shi , Yun Fook Thomas Liew , Tow Chong Chong
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： H01L45/1233 , G11C13/0004 , G11C13/003 , G11C2213/15 , G11C2213/72 , H01L27/1021 , H01L45/06 , H01L45/144
摘要： A diode and a memory device having a diode are provided. The diode includes a semiconductor layer and phase change material layer. The semiconductor layer and the phase change material layer have different energy bandgaps and different carrier concentrations such that an isotype heterojunction is formed at a boundary interface between the semiconductor layer and the phase change material layer.
摘要翻译：提供二极管和具有二极管的存储器件。二极管包括半导体层和相变材料层。半导体层和相变材料层具有不同的能带隙和不同的载流子浓度，使得在半导体层和相变材料层之间的边界界面处形成同种异质结。

6. 发明申请

US20110042720A1 Magneto-Electric Field Effect Transistor for Spintronic Applications 失效
标题翻译：用于自旋电子应用的磁电场效应晶体管
公开(公告)号：US20110042720A1
公开(公告)日：2011-02-24
申请号：US11587445
申请日：2004-04-27
申请人： Mansoor B. A. Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
发明人： Mansoor B. A. Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , H01F10/16
摘要： The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
摘要翻译：本发明涉及一种磁电场效应晶体管，其包括沟道区，源极连接到沟道区的一侧并适于将电子注入沟道区，漏极连接到沟道区的相对侧，以及适用于检测自旋极化电子; 以及包括至少一个包含四个磁性元件的磁双对元件的门，每个磁性元件适于将磁场引入沟道区，其中磁双对元件的总感应磁场可控制为基本为零，以及其中所述栅极还适于将电场引入所述沟道区域。

7. 发明授权

US07200096B2 Method and apparatus for the modulation of multilevel data arrays 失效
标题翻译：用于调制多级数据阵列的方法和装置
公开(公告)号：US07200096B2
公开(公告)日：2007-04-03
申请号：US09932491
申请日：2001-08-17
申请人： Cheng Chiang Phua , JingFeng Liu , Tow Chong Chong , Yi Hong Wu , Jun Li
发明人： Cheng Chiang Phua , JingFeng Liu , Tow Chong Chong , Yi Hong Wu , Jun Li
IPC分类号： G11B7/00
CPC分类号： G11B7/0065 , G03H1/0486 , G03H2210/22 , G06E1/045 , G11B20/10 , G11C13/04 , G11C13/042
摘要： A method and apparatus for modulating multilevel data arrays to make them suitable for storage in multidimensional storage media, such as in holographic storage. In order to get a uniform signal of constant energy at the recording plane, first the multilevel data array, Vout, displayed on a spatial light modulator, has frequent transitions between symbols of different levels, and second it has constant energy. The energy is defined as the summation of the values of the symbols in the data array. The first constraint is achieved using V′in=Vin⊕qM(q, ZO), where ⊕q stands for the modulo-q addition operation; M(q, Zo) is a data array with randomly distributed symbols of q levels, where q is the number of levels and ZO is the seed used to generate the random multilevel data array. In order to equalize the energy of the modulated data array V′in, a q-ary balanced complementary method is used to complement the symbols of the input multilevel data array, V′in, in a horizontal row-by-row readout order terminating after the first ii symbols. The final modulated output data array, Vout=|Ci,j−V′in|, simultaneously satisfies both the constraints, where the elements of Ci,j are (q−l)'s for the first ii elements in a horizontal row-by-row readout order, the others are O′s.
摘要翻译：一种用于调制多级数据阵列以使其适合于存储在多维存储介质（例如全息存储器）中的方法和装置。为了在记录平面上得到恒定能量的均匀信号，首先在空间光调制器上显示的多电平数据阵列V OUT输出在不同电平的符号之间频繁地转换，其次有恒定的能量。能量定义为数据数组中符号值的总和。第一约束是使用在/或者M（q，Z O O）中的 = V中的V'来实现的，其中⊕代表模q加法运算; M（q，Zo）是具有q级随机分布的符号的数据阵列，其中q是级别的数目，并且Z 是用于生成随机多级数据阵列的种子。为了均衡中的调制数据阵列V'的能量，使用q-平衡互补方法来补充输入多电平数据阵列的符号， SUB>，以在第一ii个符号之后终止的水平行逐行读出顺序。在最终调制输出数据阵列中，最大调制输出数据阵列同时满足两个约束条件，其中 C i，j的元素在水平行逐行读出顺序中为（第一）元素为（ql），其余为O。

8. 发明授权

US06906835B1 Doped stoichiometric lithium niobate crystals and method for high-speed holographic data storage 失效
标题翻译：掺杂的化学计量的铌酸锂晶体和用于高速全息数据存储的方法
公开(公告)号：US06906835B1
公开(公告)日：2005-06-14
申请号：US10841681
申请日：2004-05-10
申请人： Xuewu Xu , Sanjeev Solanki , Tow Chong Chong
发明人： Xuewu Xu , Sanjeev Solanki , Tow Chong Chong
IPC分类号： G03H1/02 , G03H1/26 , G11B7/0065 , G11B7/243 , G11C13/04
CPC分类号： G11B7/2433 , G03H1/02 , G03H2260/54 , G11B7/0065 , G11B2007/24304 , G11B2007/24306 , G11C13/045
摘要： The present invention discloses a recording medium comprising an improved doped Stoichiometric Lithium Niobate (SLN) crystal for high-speed holographic data storage. The improved doped SLN has an extremely high optical damage resistance of more than 145 kW/cm2 for power density of an incident laser beam along the c axis. The Recording time using the present improved doped SLN is advantageously very short and is about 1 second for a single hologram with a saturated diffraction efficiency of 28.7% at a recording laser beam density of 70 W/cm2. Reliable retrieval of a signal-image written at as low as 1 milliseconds has been performed in the Z-cut doped SLN. The present recording medium is an improved doped SLN of a Z-cut SLN crystal doped with Iron (Fe) and Terbium (Tb). The Terbium (Tb) content within the fluxed melts for growing the improved doped SLN ranges from 10 ppm to 140 ppm.
摘要翻译：本发明公开了一种记录介质，包括用于高速全息数据存储的改进的掺杂的化学计量的铌酸锂（SLN）晶体。对于沿着c轴的入射激光束的功率密度，改进的掺杂SLN具有大于145kW / cm 2的极高的光学损伤电阻。使用本改进的掺杂SLN的记录时间有利地非常短，对于在70W / cm 2的记录激光束密度下具有28.7％的饱和衍射效率的单个全息图，为约1秒。在Z切割掺杂SLN中已经执行了在低至1毫秒写入的信号图像的可靠检索。本记录介质是掺杂有铁（Fe）和铽（Tb）的Z切割SLN晶体的改进的掺杂SLN。用于生长改进的掺杂SLN的助熔熔体中的铽（Tb）含量范围为10ppm至140ppm。

9. 发明授权

US08329319B2 Phase change magnetic material 有权
标题翻译：相变磁性材料
公开(公告)号：US08329319B2
公开(公告)日：2012-12-11
申请号：US12090562
申请日：2005-10-17
申请人： Luping Shi , Wendong Song , Xiangshui Miao , Tow Chong Chong
发明人： Luping Shi , Wendong Song , Xiangshui Miao , Tow Chong Chong
IPC分类号： G11B5/65
CPC分类号： G11B7/00454 , G11B5/02 , G11B5/65 , G11B7/243 , G11B11/10586 , G11B2005/0002 , G11B2007/24308 , G11C11/14 , G11C13/0004 , H01F10/193 , H01F41/18 , H01F41/205 , H01F41/22 , H01F41/26 , H01F41/30 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1625 , Y10T428/115 , Y10T428/24942 , Y10T428/32
摘要： The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.
摘要翻译：本发明涉及用于信息记录介质的相变磁复合材料，所述材料包括相变材料组分和铁磁材料组分，其中所述材料表现出磁效应和相变效应，并且可用于光学媒体，相变随机存取存储器（PCRAM）器件，磁随机存取存储器（MRAM）器件，固态存储器件，传感器器件，逻辑器件，认知器件，人造神经网络，三电平器件，控制器件，SOC 芯片）器件和半导体。

10. 发明申请

US20090148649A1 NOVEL PHASE CHANGE MAGNETIC MATERIAL 有权
标题翻译：新型相变磁材料
公开(公告)号：US20090148649A1
公开(公告)日：2009-06-11
申请号：US12090562
申请日：2005-10-17
申请人： Luping Shi , Wendong Song , Xiangshui Miao , Tow Chong Chong
发明人： Luping Shi , Wendong Song , Xiangshui Miao , Tow Chong Chong
IPC分类号： H01F10/10 , G11B11/00 , G11B13/00 , G11B11/14 , H01F1/00 , H01F1/04
CPC分类号： G11B7/00454 , G11B5/02 , G11B5/65 , G11B7/243 , G11B11/10586 , G11B2005/0002 , G11B2007/24308 , G11C11/14 , G11C13/0004 , H01F10/193 , H01F41/18 , H01F41/205 , H01F41/22 , H01F41/26 , H01F41/30 , H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1625 , Y10T428/115 , Y10T428/24942 , Y10T428/32
摘要： The invention relates to a phase change magnetic composite material for use in an information recording medium, said material comprising a phase change material component, and a ferromagnetic material component, wherein said material exhibits both magnetic effects and phase change effects, and is usable for optical media, phase change random access memory (PCRAM) devices, magnetic random access memory (MRAM) devices, solid state memory devices, sensor devices, logical devices, cognitive devices, artificial neuron network, three level device, control device, SOC (system on chip) device, and semiconductors.
摘要翻译：本发明涉及用于信息记录介质的相变磁复合材料，所述材料包括相变材料组分和铁磁材料组分，其中所述材料表现出磁效应和相变效应，并且可用于光学媒体，相变随机存取存储器（PCRAM）器件，磁随机存取存储器（MRAM）器件，固态存储器件，传感器器件，逻辑器件，认知器件，人造神经网络，三电平器件，控制器件，SOC 芯片）器件和半导体。

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