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1. 发明授权

US06201390B1 Defect analysis in magnetic thin films 失效
标题翻译：磁性薄膜缺陷分析
公开(公告)号：US06201390B1
公开(公告)日：2001-03-13
申请号：US09377828
申请日：1999-08-20
申请人： Jian-Ping Wang , Lea Peng Tan , Thomas Yun Fook Liew
发明人： Jian-Ping Wang , Lea Peng Tan , Thomas Yun Fook Liew
IPC分类号： G01R3312
CPC分类号： G01R33/1207 , G01N27/82
摘要： A method of analyzing defects in a magnetic thin film is provided. A magnetic field is applied to the magnetic thin film. The magnetization of the magnetic thin film is measured over a range of different field strengths. A value representative of a magnetic hardness coefficient is calculated for the magnetic thin film from the magnetizations measured. The calculated value is compared with a reference value. Defect information is determined in dependence upon the comparison made. The defect information determined may relate to: (a) the relative levels of defects, if the reference value is representative of the magnetic hardness coefficient of a control specimen having a predetermined defect level; (b) the predominant type of defects, if the reference value is representative of the magnetic hardness coefficient obtained when the magnetic field is applied in a different direction; and (c) the distribution of defects, if the magnetizations are measured for a selected part of the magnetic thin film and compared with a reference value which is representative of a magnetic hardness coefficient calculated from magnetizations measured for a part other than the selected part of the magnetic thin film.
摘要翻译：提供了一种分析磁性薄膜中的缺陷的方法。对磁性薄膜施加磁场。在不同场强的范围内测量磁性薄膜的磁化。从测量的磁化计算磁性薄膜的磁性硬度系数的值。将计算值与参考值进行比较。缺陷信息取决于所做的比较。确定的缺陷信息可以涉及：（a）如果参考值代表具有预定缺陷水平的对照样本的磁性硬度系数，则缺陷的相对水平; （b）如果参考值代表当在不同方向施加磁场时获得的磁性硬度系数，则主要类型的缺陷; 和（c）缺陷的分布，如果对磁性薄膜的所选部分测量磁化，并与代表根据对所选择的部分以外的部分测量的磁化计算的磁性硬度系数的参考值进行比较磁性薄膜。

2. 发明授权

US06366081B1 Method and apparatus for high throughput media defect testing using true reference value 失效
标题翻译：用于使用真正参考值的高通量介质缺陷测试的方法和装置
公开(公告)号：US06366081B1
公开(公告)日：2002-04-02
申请号：US09512439
申请日：2000-02-25
申请人： Seng Ghee Tan , Thomas Yun Fook Liew , Teck Ee Loh , Udaya Ahangama W. Silva
发明人： Seng Ghee Tan , Thomas Yun Fook Liew , Teck Ee Loh , Udaya Ahangama W. Silva
IPC分类号： G01R3312
CPC分类号： G01R33/1207
摘要： A method and apparatus are provided for efficiently testing magnetic media in which a read level test is performed using an approximation for an average signal level in determining a test threshold and while reading data and testing against the approximate average read signal level, the data signal level is averaged to determine the real average read signal and this value is then used to adjust the results of the comparisons performed against the approximate average read level.
摘要翻译：提供了一种用于有效测试磁性介质的方法和装置，其中在确定测试阈值时使用平均信号电平的近似执行读取电平测试，并且在读取数据并根据近似平均读取信号电平进行测试时，数据信号电平被平均以确定实际平均读取信号，然后使用该值来调整对近似平均读取电平执行的比较的结果。

3. 发明授权

US07960757B2 Magneto-electric field effect transistor for spintronic applications 失效
标题翻译：用于自旋电子应用的磁电效应晶体管
公开(公告)号：US07960757B2
公开(公告)日：2011-06-14
申请号：US11587445
申请日：2004-04-27
申请人： Mansoor B A Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
发明人： Mansoor B A Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , H01F10/16
摘要： The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
摘要翻译：本发明涉及一种磁电场效应晶体管，其包括沟道区，源极连接到沟道区的一侧并适于将电子注入沟道区，漏极连接到沟道区的相对侧，以及适用于检测自旋极化电子; 以及包括至少一个包含四个磁性元件的磁双对元件的门，每个磁性元件适于将磁场引入沟道区，其中磁双对元件的总感应磁场可控制为基本为零，以及其中所述栅极还适于将电场引入所述沟道区域。

4. 发明申请

US20110042720A1 Magneto-Electric Field Effect Transistor for Spintronic Applications 失效
标题翻译：用于自旋电子应用的磁电场效应晶体管
公开(公告)号：US20110042720A1
公开(公告)日：2011-02-24
申请号：US11587445
申请日：2004-04-27
申请人： Mansoor B. A. Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
发明人： Mansoor B. A. Jalil , Seng Ghee Tan , Tow Chong Chong , Yun Fook Liew , Kie Leong Teo
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , H01F10/16
摘要： The present invention is directed to a magneto-electric field effect transistor comprising a channel region, a source connected to one side of the channel region and adapted to inject electrons into the channel region, a drain connected to the opposite side of the channel region and adapted to detect spin polarized electrons; and a gate comprising at least one magnetic double pair element comprising four magnetic elements each magnetic element being adapted to induce a magnetic field into the channel region, wherein the total induced magnetic field of the magnetic double pair element is controllable to be substantially zero, and wherein the gate is further adapted to induce an electrical field into the channel region.
摘要翻译：本发明涉及一种磁电场效应晶体管，其包括沟道区，源极连接到沟道区的一侧并适于将电子注入沟道区，漏极连接到沟道区的相对侧，以及适用于检测自旋极化电子; 以及包括至少一个包含四个磁性元件的磁双对元件的门，每个磁性元件适于将磁场引入沟道区，其中磁双对元件的总感应磁场可控制为基本为零，以及其中所述栅极还适于将电场引入所述沟道区域。

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