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    • 3. 发明授权
    • Methods for producing thin film magnetic devices having increased orientation ratio
    • 具有提高取向比的薄膜磁性装置的制造方法
    • US06821448B2
    • 2004-11-23
    • US09745182
    • 2000-12-22
    • Jian Ping WangLei HuangTow Chong Chong
    • Jian Ping WangLei HuangTow Chong Chong
    • B44C122
    • G11B5/84G11B5/732G11B5/7325
    • A method of producing a thin film magnetic device comprising forming a thin film of magnetic material over a surface of a substrate having a controlled surface topography, wherein the surface of the substrate is first subject to isotropic etching so as to increase the capacity of the substrate surface to induce a high orientation ratio in a thin film of magnetic material formed over the substrate surface without a reduction in the smoothness of the substrate; and a method of modifying a thin film magnetic device comprising a thin film of a magnetic material, the method comprising the step of subjecting a surface of the thin film magnetic device having a controlled surface topology to isotropic etching so as to increase the orientation ratio of the thin film magnetic device without reducing the smoothness of the surface of the thin film magnetic device.
    • 一种制造薄膜磁性器件的方法,包括在具有受控表面形貌的衬底的表面上形成磁性材料薄膜,其中首先对衬底的表面进行各向同性蚀刻,以增加衬底的容量 表面以在衬底表面上形成的磁性材料的薄膜中引起高取向比,而不降低衬底的平滑度; 以及修改包括磁性材料薄膜的薄膜磁性装置的方法,所述方法包括以下步骤:对具有受控表面拓扑结构的薄膜磁性装置的表面进行各向同性蚀刻,以增加取向比 薄膜磁性装置,而不会降低薄膜磁性装置表面的平滑度。
    • 8. 发明申请
    • GMR SENSOR
    • GMR传感器
    • US20140099663A1
    • 2014-04-10
    • US13885359
    • 2011-11-15
    • Jian-Ping WangYuanpeng Li
    • Jian-Ping WangYuanpeng Li
    • G01N27/72
    • G01N27/72G01R33/12G01R33/1269G01R33/1276
    • A system includes a first sensor, a field source, and a processor. The first sensor includes a surface and has an electrical resistance determined by a magnetic field at the surface. The field source is configured to provide a biasing magnetic field to the surface. The biasing magnetic field is aligned parallel to the surface and aligned perpendicular relative to the surface. The magnetic field has a frequency. The processor is coupled to the sensor and is configured to determine a parameter based on a measure of a change in the resistance. The change in the resistance corresponds to the resistance at a time before onset of a magnetic field perturbance at the surface and a time after the onset of the magnetic field perturbance at the surface.
    • 系统包括第一传感器,场源和处理器。 第一传感器包括表面并且具有由表面处的磁场确定的电阻。 场源被配置为向表面提供偏置磁场。 偏置磁场平行于表面排列并相对于表面垂直排列。 磁场有一个频率。 处理器耦合到传感器并且被配置为基于电阻变化的测量来确定参数。 电阻的变化对应于在表面处的磁场扰动开始之前的时间和表面上的磁场扰动开始之后的时间的电阻。
    • 9. 发明授权
    • Magnetic tunnel junction device
    • 磁隧道连接装置
    • US08604572B2
    • 2013-12-10
    • US13160306
    • 2011-06-14
    • Jian-Ping WangMd. Tofizur Rahman
    • Jian-Ping WangMd. Tofizur Rahman
    • H01L29/82H01L21/00
    • H01L43/08B82Y25/00B82Y40/00G11C11/16H01F10/123H01F10/3236H01F10/3254H01F10/3286H01F41/307H01L29/66984H01L29/82H01L43/12
    • A magnetic tunnel junction device comprises a fixed magnetic layer having a first side and a second side, the fixed magnetic layer having a magnetic anisotropy that is out of the film plane of the fixed magnetic layer; a stack of a plurality of bilayers adjacent to the first side of the fixed magnetic layer, each bilayer comprising a first layer comprising at least one of cobalt, iron, a CoFeB alloy, or a CoB alloy and a second layer in contact with the first layer, the second layer comprising palladium or platinum, wherein the plurality of bilayers has a magnetic anisotropy that is out of the film plane of each of the bilayers, wherein the fixed magnetic layer is exchange coupled to the stack of the plurality of bilayers, and a tunnel barrier layer in contact with the second side of the fixed magnetic layer.
    • 磁性隧道结装置包括具有第一侧和第二侧的固定磁性层,该固定磁性层具有超出固定磁性层的膜平面的磁各向异性; 与固定磁性层的第一侧相邻的多个双层的堆叠,每个双层包括包含钴,铁,CoFeB合金或CoB合金中的至少一种的第一层和与第一层接触的第二层 层,所述第二层包括钯或铂,其中所述多个双层具有超出每个双层的膜平面的磁各向异性,其中所述固定磁性层交换耦合到所述多个双层的堆叠,以及 与固定磁性层的第二面接触的隧道势垒层。