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1. 发明授权

US5545289A Passivating, stripping and corrosion inhibition of semiconductor substrates 失效
标题翻译：半导体衬底的钝化，剥离和腐蚀抑制
公开(公告)号：US5545289A
公开(公告)日：1996-08-13
申请号：US268377
申请日：1994-06-29
申请人： Jian Chen , James S. Papanu , Steve S. Y. Mak , Carmel Ish-Shalom , Peter Hsieh , Wesley G. Lau , Charles S. Rhoades , Brian Shieh , Ian S. Latchford , Karen A. Williams , Victoria Yu-Wang
发明人： Jian Chen , James S. Papanu , Steve S. Y. Mak , Carmel Ish-Shalom , Peter Hsieh , Wesley G. Lau , Charles S. Rhoades , Brian Shieh , Ian S. Latchford , Karen A. Williams , Victoria Yu-Wang
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/00
CPC分类号： H01L21/02071 , H01L21/31138 , Y10S438/958
摘要： A process for passivating, and optionally stripping and inhibiting corrosion of an etched substrate (20), is described. In the process, a substrate (20) having etchant byproducts (24) thereon, is placed into a vacuum chamber (52), and passivated in a multicycle passivation process comprising at least two passivating steps. In each passivating step, passivating gas is introduced into the vacuum chamber (52) and a plasma is generated from the passivating gas. When the substrate also has remnant resist (26) thereon, the resist (26) is stripped in a multicycle passivation and stripping process, each cycle including a passivating step and a stripping step. The stripping step is performed by introducing a stripping gas into the vacuum chamber (52) and generating a plasma from the stripping gas. In the multicycle process, the passivating and optional stripping steps, are repeated at least once in the same order that the steps were done. Alternatively, the substrate (20) can also be passivated in a single cycle process using a passivating gas comprising water vapor, oxygen, and nitrogen. Optionally, corrosion of the substrate is further inhibited by introducing an amine vapor into the vacuum chamber (52) so that amine adsorps onto the substrate (20), forming a corrosion inhibition amine layer on the surface of the substrate (20).
摘要翻译：描述了钝化和任选地剥离和抑制腐蚀的衬底（20）的腐蚀的方法。在该方法中，将具有蚀刻剂副产物（24）的衬底（20）放置在真空室（52）中，并且在包括至少两个钝化步骤的多圈钝化工艺中钝化。在每个钝化步骤中，将钝化气体引入真空室（52）中，并从钝化气体产生等离子体。当衬底上还具有残余抗蚀剂（26）时，抗蚀剂（26）在多周期钝化和剥离过程中被剥离，每个循环包括钝化步骤和剥离步骤。通过将汽提气体引入真空室（52）并从汽提气体产生等离子体来进行汽提步骤。在多周期过程中，钝化和可选的剥离步骤以与步骤相同的顺序重复至少一次。或者，也可以使用包括水蒸气，氧气和氮气的钝化气体在单周期过程中钝化基板（20）。任选地，通过将胺蒸气引入真空室（52）进一步抑制基板的腐蚀，使得胺吸附到基板（20）上，在基板（20）的表面上形成腐蚀抑制胺层。

2. 发明授权

US5643394A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5643394A
公开(公告)日：1997-07-01
申请号：US307888
申请日：1994-09-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , Brian Shieh , James S. Papanu
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, means for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas feed line from the supply to the opening in the chamber housing, and gas distribution apparatus near the opening in the chamber housing, the gas feed apparatus having at least one slit nozzle facing the interior of the chamber. In a preferred embodiment, the gas distribution apparatus includes a disk member surrounded by at least one annular member with a gap therebetween comprising the slit nozzle, the disk member and annular member blocking gas flow through the opening in the chamber housing. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of ceramic, quartz, sapphire, polyimide or anodized aluminum and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有含有气体中的蚀刻剂物质，腔室壳体中的开口，从供体到腔室中的开口的气体供给管线以及靠近腔室壳体中的开口的气体分配装置，气体供给装置具有至少一个狭缝喷嘴面向腔室的内部。在优选实施例中，气体分配装置包括由至少一个环形构件包围的盘构件，其间具有间隙，包括狭缝喷嘴，盘构件和环形构件阻挡气体流过腔室中的开口。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，石英，蓝宝石，聚酰亚胺或阳极氧化铝之一，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

3. 发明授权

US5746875A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5746875A
公开(公告)日：1998-05-05
申请号：US551881
申请日：1995-10-16
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： H05H1/46 , C23C16/44 , C23C16/455 , C23F4/00 , H01J37/32 , H01L21/302 , H01L21/3065 , H05H1/42 , H05H1/00
CPC分类号： C23C16/45574 , C23C16/45576 , C23C16/45587 , H01J37/3244 , H01J37/32449
摘要： The invention is embodied in a gas injection apparatus for injecting gases into a plasma reactor vacuum chamber having a chamber housing, a pedestal holding a workpiece to be processed, a device for applying RF energy into the chamber, the gas injection apparatus having a gas supply containing an etchant species in a gas, an opening in the chamber housing, a gas distribution apparatus disposed within the opening in the chamber housing which has at least one slotted aperture facing the interior of the chamber and a device for controlling the flow rate of gas from the one or more slotted apertures, and a gas feed line from the supply to the gas distribution apparatus. In a preferred embodiment, the gas distribution apparatus includes a center member surrounded by at least one annular member with a gap therebetween comprising the slotted aperture. Preferably, each of the members of the gas distribution apparatus comprises a material at least nearly impervious to attack from the etchant species. In one example, each of the members of the gas distribution apparatus comprises one of a ceramic, fused quartz, polymeric or anodized aluminum material and the gas feed line comprises stainless steel. Preferably, each of the members has its surface polished prior to assembly of the gas distribution apparatus.
摘要翻译：本发明体现在一种用于将气体注入等离子体反应器真空室中的气体注入装置，其具有腔室壳体，保持要加工的工件的基座，用于将RF能量施加到腔室中的装置，该气体注入装置具有气体供应在气体中含有蚀刻剂物质，在腔室中的开口，设置在腔室中的开口内的气体分配装置，其具有面向腔室内部的至少一个开口孔，以及用于控制气体流速的装置从一个或多个开槽孔，以及从供给到气体分配装置的气体供给管线。在优选实施例中，气体分配装置包括由至少一个环形构件包围的中心构件，其间具有间隙，包括开槽孔。优选地，气体分配装置的每个构件包括至少几乎不受蚀刻剂物质侵蚀的材料。在一个示例中，气体分配装置的每个构件包括陶瓷，熔融石英，聚合物或阳极氧化铝材料中的一种，气体供给管线包括不锈钢。优选地，每个构件在气体分配装置的组装之前具有其表面抛光。

4. 发明授权

US5885358A Gas injection slit nozzle for a plasma process reactor 失效
标题翻译：用于等离子体处理反应器的气体注入狭缝喷嘴
公开(公告)号：US5885358A
公开(公告)日：1999-03-23
申请号：US682803
申请日：1996-07-09
申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
发明人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
IPC分类号： C23C16/44 , C23C16/455 , C23C16/50 , H01J37/32 , H01L21/02 , H01L21/205 , H01L21/302 , H01L21/3065 , C23C16/00
CPC分类号： H01J37/321 , C23C16/455 , H01J37/3244
摘要： A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
摘要翻译：一种用于将气体注入等离子体反应器的气体注入系统，所述等离子体反应器具有具有侧壁的真空室，用于保持要处理的半导体晶片的基座和用于将RF功率施加到所述室中的RF功率施加器。气体注入系统包括至少一个含气体的气体供给装置，具有面向腔室内部的至少一个开口孔的气体分配装置以及将气体供给或供给部连接到气体分配装置的一个或多个气体供给管线。根据本发明的径向气体分配装置的优选实施例设置在室侧壁中，并且包括多个气体分配喷嘴，每个气体分配喷嘴均具有面向腔室内部的开口孔。采用气体供给管线分别连接每个气体分配喷嘴以分离气体供应源。

5. 发明授权

US5756400A Method and apparatus for cleaning by-products from plasma chamber surfaces 失效
标题翻译：从等离子体室表面清洗副产品的方法和设备
公开(公告)号：US5756400A
公开(公告)日：1998-05-26
申请号：US568064
申请日：1995-12-08
申请人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
发明人： Yan Ye , Diana Xiaobing Ma , Gerald Zheyao Yin , Keshav Prasad , Mark Siegel , Steve S. Y. Mak , Paul Martinez , James S. Papanu , Danny Chien Lu
IPC分类号： C23F4/00 , B08B7/00 , H01L21/205 , H01L21/302 , H01L21/304 , H01L21/3065 , H01L21/00
CPC分类号： B08B7/0042 , Y10S438/905
摘要： The present invention provides an apparatus and process for plasma cleaning the interior surfaces of semiconductor processing chambers. The method is directed to the dry etching of accumulated contaminant residues attached to the inner surfaces of the plasma processing chamber and includes introducing a cleaning gas mixture of a halogen-containing gas; activating a plasma in an environment substantially free of oxygen species; contacting the contaminant residues with the activated cleaning gas to volatilize the residues; and removing the gaseous by-products from the chamber. The etchant gaseous mixture comprises an even or greater amount of at least one fluorine-containing gas and an even or lesser amount of at least one chlorine-containing gas. The instant invention enables the intermittent use of the cleaning steps in an ongoing plasma processing of semiconductor wafers without chamber downtime and significant loss of wafer production.
摘要翻译：本发明提供了一种用于等离子体清洁半导体处理室内表面的装置和方法。该方法涉及连接到等离子体处理室的内表面上的累积污染物残留物的干蚀刻，并且包括引入含卤素气体的清洁气体混合物; 在基本上不含氧物质的环境中激活等离子体; 使污染物残留物与活化的清洁气体接触以挥发残余物; 并从室中除去气态副产物。蚀刻剂气体混合物包含甚至或更多量的至少一种含氟气体和甚至或更少量的至少一种含氯气体。本发明能够在半导体晶片的持续等离子体处理中间歇地使用清洁步骤，而无需室停机和晶片生产的显着损失。

6. 发明授权

US06265318B1 Iridium etchant methods for anisotropic profile 失效
标题翻译：各向异性铱刻蚀方法
公开(公告)号：US06265318B1
公开(公告)日：2001-07-24
申请号：US09251633
申请日：1999-02-17
申请人： Jeng H. Hwang , Chentsau Ying , Guang Xiang Jin , Steve S. Y. Mak
发明人： Jeng H. Hwang , Chentsau Ying , Guang Xiang Jin , Steve S. Y. Mak
IPC分类号： H01L2100
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching an electrode layer (e.g., a platinum electrode layer or an iridium electrode layer) disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.3 &mgr;m and having a profile equal to or greater than about 85°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising oxygen and/or chlorine, argon and a gas selected from the group consisting of BCl3, HBr, HCl and mixtures thereof. A semiconductor device having a substrate and a plurality of electrodes supported by the substrate. The electrodes have a dimension (e.g., a width) which include a value equal to or less than about 0.3 &mgr;m and a profile equal to or greater than about 85°.
摘要翻译：一种蚀刻设置在基板上的电极层（例如，铂电极层或铱电极层）的方法，以制造半导体器件，该半导体器件包括间隔等于或小于约0.3μm的多个电极，并具有轮廓等于或大于约85°。该方法包括将衬底加热到大于约150℃的温度，并且通过采用包含氧和/或氯，氩和选自以下的气体的气体的高密度电感耦合等离子体来蚀刻电极层：的BCl 3，HBr，HCl及其混合物。一种半导体器件，具有基板和由基板支撑的多个电极。电极具有包括等于或小于约0.3μm的值和等于或大于约85°的轮廓的尺寸（例如，宽度）。

7. 发明授权

US07270761B2 Fluorine free integrated process for etching aluminum including chamber dry clean 失效
标题翻译：无氟一体化蚀刻铝工艺，包括干燥室
公开(公告)号：US07270761B2
公开(公告)日：2007-09-18
申请号：US10273580
申请日：2002-10-18
申请人： Xikun Wang , Hui Chen , Anbei Jiang , Hong Shih , Steve S. Y. Mak
发明人： Xikun Wang , Hui Chen , Anbei Jiang , Hong Shih , Steve S. Y. Mak
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01J2237/334 , H01J2237/335 , H01L21/31138 , H01L21/32136 , H01L21/32139 , Y10S438/905
摘要： A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.
摘要翻译：一种用于等离子体蚀刻铝线的无氟集成方法，其集成电路结构包括上覆抗反射涂层（ARC）和铝下方的介电层，该方法优选在单个等离子体反应器中进行。 ARC打开使用BCl 3 / Cl 2 2或Cl 2 2和可能的烃钝化气体，优选C 2 H 2 > H 4。铝主蚀刻优选包括用He稀释的BCl 3 / Cl 2 N 2蚀刻和C 2 H 2 H 4。稀释度对于C 2 H 4 H 4的小流量特别有效。对Ti / TiN阻挡层进行过度蚀刻并且部分地进入下面的电介质可以使用类似于主蚀刻的化学。优选地，可以从晶片上取出晶片并在每个晶片周期之后进行C1 / 2 / O 2/2室清洁。

8. 发明授权

US06749770B2 Method of etching an anisotropic profile in platinum 失效
标题翻译：在铂中蚀刻各向异性轮廓的方法
公开(公告)号：US06749770B2
公开(公告)日：2004-06-15
申请号：US09948028
申请日：2001-09-05
申请人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
发明人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
IPC分类号： C09K1300
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.
摘要翻译：一种蚀刻设置在基板上的铂电极层的方法，以制造包括多个铂电极的半导体器件。该方法包括将衬底加热到大于约150℃的温度，并且通过使用包含氮和卤素（例如氯）的蚀刻剂气体的等离子体和选自以下的气体来蚀刻铂电极层：惰性气体（例如氩气），BCl 3，HBr，SiCl 4及其混合物。衬底可以在具有介电窗口的反应器室中加热，所述电介质窗口包括具有表面光洁度的沉积物接收表面，所述沉积物接收表面包括具有大于约的平均高度值的峰 - 谷粗糙度高度。

9. 发明授权

US06919168B2 Masking methods and etching sequences for patterning electrodes of high density RAM capacitors 失效
标题翻译：用于高密度RAM电容器的图形化电极的掩模方法和蚀刻顺序
公开(公告)号：US06919168B2
公开(公告)日：2005-07-19
申请号：US10057674
申请日：2002-01-24
申请人： Jeng H. Hwang , Steve S. Y. Mak , True-Lon Lin , Chentsau Ying , John W. Schaller
发明人： Jeng H. Hwang , Steve S. Y. Mak , True-Lon Lin , Chentsau Ying , John W. Schaller
IPC分类号： C23F4/00 , H01L21/02 , H01L21/3213 , G03F7/00 , G03F7/36
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching a noble metal electrode layer disposed on a substrate to produce a semiconductor device including a plurality of electrodes separated by a distance equal to or less than about 0.35 μm and having a noble metal profile equal to or greater than about 80°. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the noble metal electrode layer by employing a high density inductively coupled plasma of an etchant gas comprising a gas selected from the group consisting of nitrogen, oxygen, a halogen (e.g., chlorine), argon, and a gas selected from the group consisting of BCl3, HBr, and SiCl4 mixtures thereof. Masking methods and etching sequences for patterning high density RAM capacitors are also provided.
摘要翻译：一种蚀刻设置在基板上的贵金属电极层的方法，以制造半导体器件，该半导体器件包括间隔等于或小于约0.35μm并且具有等于或大于约80°的贵金属形状的多个电极。该方法包括将衬底加热到大于约150℃的温度，并且通过采用蚀刻剂气体的高密度电感耦合等离子体蚀刻贵金属电极层，所述等离子体包括选自氮，氧，卤素（例如氯），氩气和选自BCl 3，HBr和SiCl 4+混合物的气体。还提供了用于图案化高密度RAM电容器的掩模方法和蚀刻顺序。

10. 发明授权

US06323132B1 Etching methods for anisotropic platinum profile 失效
标题翻译：各向异性铂型材蚀刻方法
公开(公告)号：US06323132B1
公开(公告)日：2001-11-27
申请号：US09251826
申请日：1999-02-17
申请人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
发明人： Jeng H. Hwang , Chentsau Ying , Kang-Lie Chiang , Steve S. Y. Mak
IPC分类号： H01L21302
CPC分类号： H01L28/60 , C23F4/00 , H01L21/32136 , H01L21/32139
摘要： A method of etching a platinum electrode layer disposed on a substrate to produce a semiconductor device including a plurality of platinum electrodes. The method comprises heating the substrate to a temperature greater than about 150° C., and etching the platinum electrode layer by employing a plasma of an etchant gas comprising nitrogen and a halogen (e.g. chlorine), and a gas selected from the group consisting of a noble gas (e.g. argon), BCl3, HBr, SiCl4 and mixtures thereof. The substrate may be heated in a reactor chamber having a dielectric window including a deposit-receiving surface having a surface finish comprising a peak-to-valley roughness height with an average height value of greater than about 1000 Å.
摘要翻译：一种蚀刻设置在基板上的铂电极层的方法，以制造包括多个铂电极的半导体器件。该方法包括将衬底加热到大于约150℃的温度，并且通过使用包含氮和卤素（例如氯）的蚀刻剂气体的等离子体和选自以下的气体来蚀刻铂电极层：惰性气体（例如氩气），BCl 3，HBr，SiCl 4及其混合物。衬底可以在具有介电窗口的反应器室中加热，所述电介质窗口包括具有表面光洁度的沉积物接收表面，所述沉积物接收表面包括具有大于约的平均高度值的峰 - 谷粗糙度高度。

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