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1. 发明授权

US08398779B2 Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates 有权
标题翻译：从含铝基材中非金属沉积物的非破坏性选择性沉积去除
公开(公告)号：US08398779B2
公开(公告)日：2013-03-19
申请号：US12709369
申请日：2010-02-19
申请人： Liyuan Bao , Anbei Jiang , Sio On Lo , Yukari Nishimura , Joseph F. Sommers , Samantha S. H. Tan
发明人： Liyuan Bao , Anbei Jiang , Sio On Lo , Yukari Nishimura , Joseph F. Sommers , Samantha S. H. Tan
IPC分类号： B08B3/08
CPC分类号： C23C16/4407 , C23G1/125 , Y02P20/582
摘要： Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/−2% HF or buffered HF acid, 3.8%+/−0.5% NH4F pH buffer, 59.7%+/−5% ethylene glycol, and the balance H2O.
摘要翻译：使用选择性沉积去除（SDR）溶液，从含铝底物例如铝面板选择性地除去非金属沉积物。 SDR溶液基本上不蚀刻面板孔，从而保持孔直径的完整性并增加面板在保持在加工孔直径公差范围内可被清洁或翻新的次数。在一个实施方案中，SDR溶液以重量％的比例包含15.5％±2％HF或缓冲HF酸，3.8％±0.5％NH 4 F pH缓冲液，59.7％±5％乙二醇，和余量H 2 O。

2. 发明授权

US06852242B2 Cleaning of multicompositional etchant residues 失效
标题翻译：清洗多组分蚀刻剂残留物
公开(公告)号：US06852242B2
公开(公告)日：2005-02-08
申请号：US09792444
申请日：2001-02-23
申请人： Zhi-Wen Sun , Anbei Jiang , Tuo-Chuan Huang
发明人： Zhi-Wen Sun , Anbei Jiang , Tuo-Chuan Huang
IPC分类号： B08B7/00 , C03C15/00 , C23C16/44 , C23F1/00 , H01J37/32 , H01L21/00 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02046 , H01J37/321 , H01J37/32449 , H01J37/32935
摘要： A substrate processing apparatus has a chamber with a substrate transport to transport a substrate onto a substrate support in the chamber, a gas supply to provide a gas in the chamber, a gas energizer to energize the gas, and a gas exhaust to exhaust the gas. A controller operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set etching process conditions in the chamber to etch a plurality of substrates, thereby depositing etchant residues on surfaces in the chamber. The controller also operates one or more of the substrate support, gas supply, gas energizer, and gas exhaust, to set cleaning process conditions in the chamber to clean the etchant residues. The cleaning process conditions comprise a volumetric flow ratio of O2 to CF4 of from about 1:1 to about 1:40.
摘要翻译：基板处理装置具有具有基板输送的基板输送基板到室内的基板支撑体上的气室，在该室内提供气体的气体供给器，对该气体进行通电的气体增压器以及排出气体的排气。控制器操作衬底支撑件，气体供应器，气体激发器和气体排出中的一个或多个，以在腔室中设置蚀刻工艺条件以蚀刻多个衬底，由此在腔室中的表面上沉积蚀刻剂残留物。控制器还操作一个或多个衬底支撑件，气体供应器，气体激励器和气体排出器，以设置腔室中的清洁工艺条件以清洁蚀刻剂残留物。清洗过程条件包括O2至CF4的体积流量比为约1:1至约1:40。

3. 发明授权

US08691023B2 Methods and apparatus for cleaning deposition chamber parts using selective spray etch 有权
标题翻译：使用选择性喷涂蚀刻来清洁沉积室部件的方法和设备
公开(公告)号：US08691023B2
公开(公告)日：2014-04-08
申请号：US13585294
申请日：2012-08-14
申请人： Liyuan Bao , Samantha S. H. Tan , Anbei Jiang
发明人： Liyuan Bao , Samantha S. H. Tan , Anbei Jiang
IPC分类号： B08B3/00
CPC分类号： C23G3/00 , B08B3/08 , C23C14/564 , C23C16/4407 , C23F1/00 , C23F1/26 , C23F1/44 , C23G1/00 , C23G1/22
摘要： In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.
摘要翻译：一方面，提供一种清洁电子装置制造处理室部件的方法，包括：a）用酸喷涂该部件; b）用DI水喷涂部件; 和c）用氢氧化钾处理该部分。提供其他方面。

4. 发明申请

US20100218788A1 NON DESTRUCTIVE SELECTIVE DEPOSITION REMOVAL OF NON-METALLIC DEPOSITS FROM ALUMINUM CONTAINING SUBSTRATES 有权
标题翻译：非破坏性选择性沉积物从含铝衬底去除非金属沉积物
公开(公告)号：US20100218788A1
公开(公告)日：2010-09-02
申请号：US12709369
申请日：2010-02-19
申请人： Liyuan Bao , Anbei Jiang , Sio On Lo , Yukari Nishimura , Joseph F. Sommers , Samantha S.H. Tan
发明人： Liyuan Bao , Anbei Jiang , Sio On Lo , Yukari Nishimura , Joseph F. Sommers , Samantha S.H. Tan
IPC分类号： C23G1/02
CPC分类号： C23C16/4407 , C23G1/125 , Y02P20/582
摘要： Non-metallic deposits are selectively removed from aluminum containing substrates such as aluminum faceplates using a selective deposition removal (SDR) solution. The SDR solution does not substantially etch the faceplate holes, thereby preserving the hole diameter integrity and increasing the number of times the faceplate may be cleaned or refurbished while remaining within processing hole diameter tolerances. In an embodiment, the SDR solution comprises, in wt % of the solution, 15.5%+/−2% HF or buffered HF acid, 3.8%+/−0.5% NH4F pH buffer, 59.7%+/−5% ethylene glycol, and the balance H2O.
摘要翻译：使用选择性沉积去除（SDR）溶液，从含铝底物例如铝面板选择性地除去非金属沉积物。 SDR溶液基本上不蚀刻面板孔，从而保持孔直径的完整性并增加面板在保持在加工孔直径公差范围内可被清洁或翻新的次数。在一个实施方案中，SDR溶液以重量％的比例包含15.5％±2％HF或缓冲HF酸，3.8％±0.5％NH 4 F pH缓冲液，59.7％±5％乙二醇，和余量H 2 O。

5. 发明申请

US20130037062A1 METHODS AND APPARATUS FOR CLEANING DEPOSITION CHAMBER PARTS USING SELECTIVE SPRAY ETCH 有权
公开(公告)号：US20130037062A1
公开(公告)日：2013-02-14
申请号：US13585294
申请日：2012-08-14
申请人： Liyuan Bao , Smantha S.H. Tan , Anbei Jiang
发明人： Liyuan Bao , Smantha S.H. Tan , Anbei Jiang
IPC分类号： B08B3/00
CPC分类号： C23G3/00 , B08B3/08 , C23C14/564 , C23C16/4407 , C23F1/00 , C23F1/26 , C23F1/44 , C23G1/00 , C23G1/22
摘要： In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

6. 发明授权

US07270761B2 Fluorine free integrated process for etching aluminum including chamber dry clean 失效
标题翻译：无氟一体化蚀刻铝工艺，包括干燥室
公开(公告)号：US07270761B2
公开(公告)日：2007-09-18
申请号：US10273580
申请日：2002-10-18
申请人： Xikun Wang , Hui Chen , Anbei Jiang , Hong Shih , Steve S. Y. Mak
发明人： Xikun Wang , Hui Chen , Anbei Jiang , Hong Shih , Steve S. Y. Mak
IPC分类号： H01L21/302
CPC分类号： C23F4/00 , H01J2237/334 , H01J2237/335 , H01L21/31138 , H01L21/32136 , H01L21/32139 , Y10S438/905
摘要： A fluorine-free integrated process for plasma etching aluminum lines in an integrated circuit structure including an overlying anti-reflection coating (ARC) and a dielectric layer underlying the aluminum, the process being preferably performed in a single plasma reactor. The ARC open uses either BCl3/Cl2 or Cl2 and possibly a hydrocarbon passivating gas, preferably C2H4. The aluminum main etch preferably includes BCl3/Cl2 etch and C2H4 diluted with He. The dilution is particularly effective for small flow rates of C2H4. An over etch into the Ti/TiN barrier layer and part way into the underlying dielectric may use a chemistry similar to the main etch. A Cl2/O2 chamber cleaning may be performed, preferably with the wafer removed from the chamber and after every wafer cycle.
摘要翻译：一种用于等离子体蚀刻铝线的无氟集成方法，其集成电路结构包括上覆抗反射涂层（ARC）和铝下方的介电层，该方法优选在单个等离子体反应器中进行。 ARC打开使用BCl 3 / Cl 2 2或Cl 2 2和可能的烃钝化气体，优选C 2 H 2 > H 4。铝主蚀刻优选包括用He稀释的BCl 3 / Cl 2 N 2蚀刻和C 2 H 2 H 4。稀释度对于C 2 H 4 H 4的小流量特别有效。对Ti / TiN阻挡层进行过度蚀刻并且部分地进入下面的电介质可以使用类似于主蚀刻的化学。优选地，可以从晶片上取出晶片并在每个晶片周期之后进行C1 / 2 / O 2/2室清洁。

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