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    • 10. 发明授权
    • Wire for a display device, a method for manufacturing the same, a thin film transistor array panel including the wire, and a method for manufacturing the same
    • 用于显示装置的线,其制造方法,包括该线的薄膜晶体管阵列面板及其制造方法
    • US07638800B2
    • 2009-12-29
    • US10501597
    • 2002-07-29
    • Seung-Hee YuMun-Pyo HongSoo-Guy RhoNam-Seok RhoKeun-Kyu SongHee-Hwan ChoeBo-Sung KimSang-Gab KimSung-Chul KangHong-Sick Park
    • Seung-Hee YuMun-Pyo HongSoo-Guy RhoNam-Seok RhoKeun-Kyu SongHee-Hwan ChoeBo-Sung KimSang-Gab KimSung-Chul KangHong-Sick Park
    • H01L21/84
    • G02F1/136286G02F2001/136295
    • First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads. A transparent conductive material or a reflective conductive material is deposited and patterned to form a plurality of pixel electrodes, a plurality of subsidiary gate pads and a plurality of subsidiary data pads electrically connected to the drain electrodes, the gate pads and the data pads, respectively. The gate lines and the data lines with low reflectance are used as a light-blocking film for blocking the light leakage between the pixel areas, and do not increase the black brightness. Accordingly, a separate black matrix need not be provided on the color filter panel, thereby securing both aperture ratio of the pixel and high contrast ratio.
    • 首先,使用包括8-12%Ce(NH 4)2(NO 3)6,10-20%NH 3和剩余的超纯水的蚀刻剂沉积和图案化Cr膜和CrOx膜,以形成包括多个 栅极线,多个栅电极和多个栅极焊盘。 接下来,依次形成栅极绝缘膜,半导体层和欧姆接触层。 依次沉积Cr膜和CrOx膜,并使用包括8-12%Ce(NH 4)2(NO 3)6,10-20%NH 3和剩余的超纯水的蚀刻剂进行图案化以形成包括多个数据的数据线 线,多个源电极,多个漏电极和多个数据焊盘。 钝化层被沉积并图案化以形成分别暴露漏电极,栅极焊盘和数据焊盘的多个接触孔。 沉积透明导电材料或反射导电材料以形成多个像素电极,分别与漏电极,栅极焊盘和数据焊盘电连接的多个辅助栅极焊盘和多个辅助数据焊盘 。 栅极线和低反射率的数据线被用作阻挡像素区域之间的漏光的遮光膜,并且不增加黑色亮度。 因此,不需要在滤色器面板上设置单独的黑矩阵,从而确保像素的开口率和高对比度。