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1. 发明授权

US08836756B2 Apparatus and method for acquiring 3D depth information 有权
标题翻译：用于获取3D深度信息的装置和方法
公开(公告)号：US08836756B2
公开(公告)日：2014-09-16
申请号：US13333968
申请日：2011-12-21
申请人： Ji-Young Park , Jae-Ho Lee , Seung-Ki Hong , Hee-Kwon Kim , Seung-Woo Nam
发明人： Ji-Young Park , Jae-Ho Lee , Seung-Ki Hong , Hee-Kwon Kim , Seung-Woo Nam
IPC分类号： H04N13/00
CPC分类号： H04N13/254
摘要： Disclosed herein are an apparatus and method for acquiring 3D depth information. The apparatus includes a pattern projection unit, an image acquisition unit, and an operation unit. The pattern projection unit projects light, radiated by an infrared light source, into a space in a form of a pattern. The image acquisition unit acquires an image corresponding to the pattern using at least one camera. The operation unit extracts a pattern from the image, analyzes results of the extraction, and calculates information about a 3D distance between objects existing in the space.
摘要翻译：本文公开了一种用于获取3D深度信息的装置和方法。该装置包括图案投影单元，图像获取单元和操作单元。图案投影单元将由红外光源辐射的光投射到图案形式的空间中。图像获取单元使用至少一个照相机获取与图案相对应的图像。操作单元从图像中提取图案，分析提取结果，并计算有关存在于空间中的对象之间的3D距离的信息。

2. 发明授权

US08450850B2 Thin-film transistor substrate and method of manufacturing the same 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08450850B2
公开(公告)日：2013-05-28
申请号：US13193413
申请日：2011-07-28
申请人： Hong Long Ning , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
发明人： Hong Long Ning , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
IPC分类号： H01L23/52
CPC分类号： H01L29/458 , B82Y10/00 , B82Y30/00 , H01L21/76877 , H01L27/124 , H01L29/41733 , H01L29/78684 , H01L51/0048 , H01L2221/1094
摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.
摘要翻译：提供一种薄膜晶体管（TFT）基板及其制造方法。该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

3. 发明授权

US08383437B2 Echtant and method for manufacturing display device using the same 有权
标题翻译：用于制造使用该显示装置的显示装置的方法
公开(公告)号：US08383437B2
公开(公告)日：2013-02-26
申请号：US13223958
申请日：2011-09-01
申请人： Ji-Young Park , Shin-Il Choi , Jong-Hyun Choung , Sang Gab Kim , Seon-Il Kim , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Yu-Jin Lee
发明人： Ji-Young Park , Shin-Il Choi , Jong-Hyun Choung , Sang Gab Kim , Seon-Il Kim , Sang-Tae Kim , Joon-Woo Lee , Young-Chul Park , Young-Jun Jin , Kyong-Min Kang , Suck-Jun Lee , O-Byoung Kwon , In-Ho Yu , Sang-Hoon Jang , Min-Ki Lim , Yu-Jin Lee
IPC分类号： H01L21/00
CPC分类号： C09K13/08 , C23F1/18 , C23F1/26 , C23F1/44 , H01L21/32134 , H01L27/1259 , H01L29/41733
摘要： An etchant according to exemplary embodiments of the present invention includes about 0.5 wt % to about 20 wt % of persulfate, about 0.01 wt % to about 2 wt % of a fluorine compound, about 1 wt % to about 10 wt % of inorganic acid, about 0.5 wt % to about 5 wt % of a cyclic amine compound, about 0.1 wt % to about 5 wt % of a chlorine compound, about 0.05 wt % to about 3 wt % of copper salt, about 0.1 wt % to about 10 wt % of organic acid or organic acid salt, and water.
摘要翻译：根据本发明的示例性实施方案的蚀刻剂包括约0.5重量％至约20重量％的过硫酸盐，约0.01重量％至约2重量％的氟化合物，约1重量％至约10重量％的无机酸，约0.5重量％至约5重量％的环胺化合物，约0.1重量％至约5重量％的氯化合物，约0.05重量％至约3重量％的铜盐，约0.1重量％至约10重量％％的有机酸或有机酸盐，和水。

4. 发明授权

US08377626B2 Methods of forming a pattern using negative-type photoresist compositions 有权
标题翻译：使用负型光致抗蚀剂组合物形成图案的方法
公开(公告)号：US08377626B2
公开(公告)日：2013-02-19
申请号：US12662076
申请日：2010-03-30
申请人： Kyoung-Mi Kim , Jin-Baek Kim , Ji-Young Park , Young-Ho Kim
发明人： Kyoung-Mi Kim , Jin-Baek Kim , Ji-Young Park , Young-Ho Kim
IPC分类号： G03F7/00 , G03F7/004 , G03F7/40
CPC分类号： G03F7/0758 , G03F7/0382 , G03F7/094 , H01L21/0271 , H01L21/3081 , H01L21/31144 , H01L27/10817 , H01L27/10852 , H01L27/10873 , H01L27/11546
摘要： A method of forming a pattern and a negative-type photoresist composition, the method including forming a photoresist film on a substrate by coating a photoresist composition thereon, the photoresist composition including a polymer, a photoacid generator, and a solvent, wherein the polymer includes an alkoxysilyl group as a side chain and is cross-linkable by an acid to be insoluble in a developer; curing a first portion of the photoresist film by exposing the first portion to light, the exposed first portion being cured by a cross-linking reaction of the alkoxysilyl groups therein; and providing a developer to the photoresist film to remove a second portion of the photoresist film that is not exposed to light, thereby forming a photoresist pattern on the substrate.
摘要翻译：一种形成图案和负型光致抗蚀剂组合物的方法，所述方法包括通过在其上涂覆光致抗蚀剂组合物在基底上形成光致抗蚀剂膜，光致抗蚀剂组合物包括聚合物，光致酸产生剂和溶剂，其中聚合物包括作为侧链的烷氧基甲硅烷基，可以被不可溶于显影剂的酸交联; 通过将第一部分暴露于光来固化光致抗蚀剂膜的第一部分，暴露的第一部分通过其中的烷氧基甲硅烷基的交联反应固化; 以及向所述光致抗蚀剂膜提供显影剂以去除未曝光的所述光致抗蚀剂膜的第二部分，由此在所述基板上形成光致抗蚀剂图案。

5. 发明申请

US20120112346A1 THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20120112346A1
公开(公告)日：2012-05-10
申请号：US13193413
申请日：2011-07-28
申请人： Hong Long NING , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
发明人： Hong Long NING , Chang-Oh Jeong , Ji-Young Park , Sang-Gab Kim , Sung-Haeng Cho , Yeon-Hong Kim , Jin-Su Byun
IPC分类号： H01L23/532 , B82Y40/00 , B82Y20/00 , H01L21/768
CPC分类号： H01L29/458 , B82Y10/00 , B82Y30/00 , H01L21/76877 , H01L27/124 , H01L29/41733 , H01L29/78684 , H01L51/0048 , H01L2221/1094
摘要： Provided are a thin-film transistor (TFT) substrate and a method of manufacturing the same. The method includes: forming a passivation film by forming an insulating film on a substrate; forming a photoresist pattern by forming a photoresist film on the passivation film, exposing the photoresist film to light, and developing the photoresist film; performing a first dry-etching by dry-etching the passivation film using the photoresist pattern as an etch mask; performing a baking to reduce a size of the photoresist pattern; performing a second dry-etching to form a contact hole by dry-etching the passivation film again using the photoresist pattern as a mask; removing the photoresist pattern; and forming a pixel electrode of a carbon composition that includes carbon nanotubes and/or graphene on a top surface of the passivation film.
摘要翻译：提供一种薄膜晶体管（TFT）基板及其制造方法。该方法包括：通过在基板上形成绝缘膜来形成钝化膜; 通过在钝化膜上形成光致抗蚀剂膜形成光致抗蚀剂图案，将光致抗蚀剂膜曝光并使光致抗蚀剂膜显影; 通过使用光致抗蚀剂图案作为蚀刻掩模来干蚀刻钝化膜来执行第一干蚀刻; 进行烘烤以减小光致抗蚀剂图案的尺寸; 通过使用光致抗蚀剂图案作为掩模再次干蚀刻钝化膜来进行第二次干蚀刻以形成接触孔; 去除光致抗蚀剂图案; 以及在钝化膜的顶表面上形成包括碳纳米管和/或石墨烯的碳组合物的像素电极。

6. 发明申请

US20120064678A1 MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL 审中-公开
标题翻译：薄膜晶体管阵列的制造方法
公开(公告)号：US20120064678A1
公开(公告)日：2012-03-15
申请号：US13069070
申请日：2011-03-22
申请人： Byeong-Jin LEE , Yu-Gwang Jeong , Dong-Ju Yang , Bong-Kyun Kim , Hong-Sick Park , Byeong-Beom Kim , Sang-Gab Kim , Ji-Young Park , Jean-Ho Song , Ki-Yeup Lee , Shin-Il Choi
发明人： Byeong-Jin LEE , Yu-Gwang Jeong , Dong-Ju Yang , Bong-Kyun Kim , Hong-Sick Park , Byeong-Beom Kim , Sang-Gab Kim , Ji-Young Park , Jean-Ho Song , Ki-Yeup Lee , Shin-Il Choi
IPC分类号： H01L21/336
CPC分类号： H01L27/1288 , H01L27/1214 , H01L29/458 , H01L29/4908 , H01L29/66765 , H01L29/78678
摘要： A method for manufacturing a TFT array panel includes forming a photosensitive film pattern with first and second parts in first and second sections on a metal layer, etching the metal layer of a third section using the film pattern as a mask to form first and second metal patterns, etching the film pattern to remove the first part, etching first and second amorphous silicon layers of the third section using the second part as a mask to form an amorphous silicon pattern and a semiconductor, etching the first and second metal patterns of the first section using the second part as a mask to form a source electrode and a drain electrode including an upper layer and a lower layer, and etching the amorphous silicon pattern of the region corresponding to the first section by using the second part as a mask to form an ohmic contact.
摘要翻译：一种TFT阵列板的制造方法，其特征在于，在金属层的第一和第二部分中形成具有第一和第二部分的感光膜图案，使用所述膜图案作为掩模蚀刻第三部分的金属层，以形成第一和第二金属蚀刻薄膜图案以去除第一部分，使用第二部分作为掩模蚀刻第三部分的第一和第二非晶硅层以形成非晶硅图案和半导体，蚀刻第一部分的第一和第二金属图案使用第二部分作为掩模形成源电极和包括上层和下层的漏极，并且通过使用第二部分作为掩模来蚀刻与第一部分相对应的区域的非晶硅图案以形成欧姆接触。

7. 发明申请

US20140178023A1 HYBRID PHOTONIC CRYSTAL FIBER, AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：混合光电晶体纤维及其制造方法
公开(公告)号：US20140178023A1
公开(公告)日：2014-06-26
申请号：US14236300
申请日：2012-01-11
申请人： Kyung-Hwan Oh , Ji-Young Park
发明人： Kyung-Hwan Oh , Ji-Young Park
IPC分类号： G02B6/02 , C03B37/15
CPC分类号： G02B6/02314 , C03B37/15 , G02B6/02328 , G02B6/032
摘要： The present invention relates to a hybrid photonic crystal fiber, into the core of which a functional material is injected. The hybrid photonic crystal fiber of the present invention comprises: a central hole having a diameter of 4 to 15 μm extending in the longitudinal direction; an inner cladding also formed in the longitudinal direction outside the central hole, having a hexagonal arrangement of air holes, each of which has a diameter of 2 to 5 μm and a lattice constant of 4.5 to 7 μm; an annular outer cladding surrounding the outer surface of the inner cladding; and a core formed by filling a functional material in some of the air holes including the central hole. According to the present invention, changes in the state, i.e. the liquid, liquid-crystal, or biofluid states, of the functional material that fills the core that has a variety of shapes may enable the modulation of light intensity, wavelength, phase, and polarization, and thus enable various photonic networks to be produced. The hybrid photonic crystal fiber of the present invention may serve as various optical sensors capable of sensing changes in refractive index caused by external stresses such as temperature and pressure. The hybrid photonic crystal fiber of the present invention may be used as a light source for a fluorescent dye laser for a visible ray zone using fluorescent dye, or for an ultra-wideband laser of 700 nm or higher using high nonlinear liquid.
摘要翻译：本发明涉及混合光子晶体光纤，其中注入功能材料的核心。本发明的混合光子晶体光纤包括：沿纵向延伸的直径为4至15μm的中心孔; 在中心孔的外侧沿长度方向形成的内包层，具有六边形排列的气孔，每个孔的直径为2〜5μm，晶格常数为4.5〜7μm。围绕所述内包层的外表面的环形外包层; 以及通过在包括中心孔的一些气孔中填充功能材料而形成的芯。根据本发明，填充具有各种形状的芯的功能材料的状态（即液体，液晶或生物流体状态）的变化可使得能够调制光强度，波长，相位和极化，从而能够产生各种光子网络。本发明的混合光子晶体光纤可以用作能够感测由诸如温度和压力的外部应力引起的折射率变化的各种光学传感器。可以使用本发明的混合光子晶体光纤作为使用荧光染料的可见光区域的荧光染料激光器的光源或者使用高非线性液体的700nm以上的超宽带激光器。

8. 发明授权

US08755019B2 Method for manufacturing a liquid crystal display 有权
标题翻译：液晶显示器的制造方法
公开(公告)号：US08755019B2
公开(公告)日：2014-06-17
申请号：US13193488
申请日：2011-07-28
申请人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
发明人： Ji-Young Park , Sang Gab Kim , Yong-Mo Choi , Hyung Jun Kim , Sung-Haeng Cho , Hong-Sick Park , Byeong-Jin Lee , Soo-Wan Yoon
IPC分类号： G02F1/1339 , G02F1/13
CPC分类号： H01L27/1288 , G02F1/1362 , G02F2001/136231 , H01L29/41733
摘要： A method of manufacturing a liquid crystal display includes: forming a gate line including a gate electrode on a first substrate; forming a gate insulating layer on the gate line; sequentially forming a semiconductor layer, an amorphous silicon layer, and a data metal layer on the entire surface of the gate insulating layer; aligning the edges of the semiconductor layer and the data metal layer; forming a transparent conductive layer on the gate insulating layer and the data metal layer; forming a first pixel electrode and a second pixel electrode by patterning the transparent conductive layer; and forming a data line including a source electrode, a drain electrode, and an ohmic contact layer by etching the data metal layer and the amorphous silicon layer, using the first pixel electrode and the second pixel electrode as a mask, and exposing the semiconductor between the source electrode and the drain electrode.
摘要翻译：制造液晶显示器的方法包括：在第一基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在栅极绝缘层的整个表面上依次形成半导体层，非晶硅层和数据金属层; 对准半导体层和数据金属层的边缘; 在栅绝缘层和数据金属层上形成透明导电层; 通过图案化透明导电层形成第一像素电极和第二像素电极; 以及使用所述第一像素电极和所述第二像素电极作为掩模，通过蚀刻所述数据金属层和所述非晶硅层来形成包括源电极，漏电极和欧姆接触层的数据线，并且使所述半导体在源电极和漏电极。

9. 发明授权

US07996179B2 Method of measuring pose of mobile robot and method and apparatus for measuring position of mobile robot using the same 有权
标题翻译：测量移动机器人姿态的方法及使用其的移动机器人的位置测量方法和装置
公开(公告)号：US07996179B2
公开(公告)日：2011-08-09
申请号：US12219235
申请日：2008-07-17
申请人： Hyoung-Ki Lee , Ki-Wan Choi , Seok-Won Bang , Woo-Yeon Jeong , Ji-Young Park
发明人： Hyoung-Ki Lee , Ki-Wan Choi , Seok-Won Bang , Woo-Yeon Jeong , Ji-Young Park
IPC分类号： G01C9/00 , G06F19/00
CPC分类号： G05D1/0891 , G06T7/73 , G06T2207/10016 , G06T2207/30244 , G06T2207/30252
摘要： A method of measuring pose of mobile robot, and method and apparatus for measuring for measuring position of mobile robot using the same are provided. The apparatus for measuring the pose of a mobile robot includes an accelerometer measuring acceleration of the mobile robot in a forward direction, a uniform-motion-determining unit determining whether the mobile robot belongs to a uniform motion section, an acceleration section, or a deceleration section, and a pose-calculating unit calculating a pitch and a roll of the mobile robot in the uniform motion section, using the relationship between the measured acceleration in the forward direction and the acceleration due to gravity.
摘要翻译：提供了一种测量移动机器人姿态的方法，以及用于测量用于测量移动机器人的移动机器人的位置的方法和装置。用于测量移动机器人的姿态的装置包括：加速度计，测量移动机器人在向前方向的加速度;均匀运动确定单元，确定移动机器人是否属于均匀运动部分，加速部分或减速度姿势计算单元，使用所测量的向前方向的加速度与重力加速度之间的关系来计算均匀运动部分中的移动机器人的俯仰和滚动。

10. 发明申请

US20110166763A1 Apparatus and method detecting a robot slip 审中-公开
标题翻译：检测机器人滑移的装置和方法
公开(公告)号：US20110166763A1
公开(公告)日：2011-07-07
申请号：US12926009
申请日：2010-10-20
申请人： Ki-Wan Choi , Ji-Young Park , Hyoung-Ki Lee , Woo-Yeon Jeong
发明人： Ki-Wan Choi , Ji-Young Park , Hyoung-Ki Lee , Woo-Yeon Jeong
IPC分类号： G05D1/00
CPC分类号： G05D1/0272 , G05D1/027
摘要： An apparatus and method for detecting a slip of a robot. According to the apparatus and method, the probability of a slip occurring may be preliminarily determined using a first acceleration obtained from an acceleration sensor and a second acceleration obtained from an encoder. Then, finally the occurrence of a slip may be determined using a change in a driving control signal. Thus, accurate detection of a slip can be realized while preventing incorrect determination of slip occurrence.
摘要翻译：一种用于检测机器人滑动的装置和方法。根据该装置和方法，可以使用从加速度传感器获得的第一加速度和从编码器获得的第二加速度来初步确定滑动发生的概率。然后，最终可以使用驱动控制信号的变化来确定滑移的发生。因此，可以在防止滑动发生的错误确定的同时实现滑动的精确检测。

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