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    • 6. 发明授权
    • Method of dividing past computing instances into predictable and unpredictable sets and method of predicting computing value
    • 将过去的计算实例划分为可预测和不可预测的集合的方法以及预测计算值的方法
    • US07720771B1
    • 2010-05-18
    • US11165810
    • 2005-06-24
    • Eric AndersonDirk BeyerIra CohenTerence P. KellyJanet Wiener
    • Eric AndersonDirk BeyerIra CohenTerence P. KellyJanet Wiener
    • G06F15/18
    • G06N99/005
    • An embodiment of a method of dividing past computing instances into predictable and unpredictable sets begins with a first step of a computing entity storing a training data set comprising past computing instances. Each past computing instance comprises attributes and a past computing value. In a second step, the computing entity separates the training data set into a predictable set of past computing instances and an unpredictable set of past computing instances. According to an embodiment, a method of predicting a computing value begins with the first and second steps. The method of predicting the computing value continues with a third step of the computing entity forming a predictor from the predictable set of past computing instances. In a fourth step, the computing entity applies the predictor to a pending computing instance that meets a predictability test to determine a predicted value for the pending computing instance.
    • 将过去的计算实例划分为可预测和不可预测的集合的方法的实施例开始于存储包括过去的计算实例的训练数据集的计算实体的第一步骤。 每个过去的计算实例包括属性和过去的计算值。 在第二步骤中,计算实体将训练数据集分成可预测的一组过去的计算实例和不可预测的一组过去的计算实例。 根据实施例,预测计算值的方法从第一和第二步骤开始。 预测计算值的方法继续,计算实体的第三步从预测的一组过去的计算实例形成预测器。 在第四步骤中,计算实体将预测器应用于满足可预测性测试的待决计算实例以确定未决计算实例的预测值。
    • 9. 发明申请
    • Process for controlling the proximity effect correction
    • 用于控制邻近效应校正的过程
    • US20050287450A1
    • 2005-12-29
    • US11165312
    • 2005-06-23
    • Peter HudekDirk Beyer
    • Peter HudekDirk Beyer
    • G03C5/00G03F1/00H01J37/317
    • B82Y10/00B82Y40/00H01J37/3174H01J2237/31769Y10S430/143
    • A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters α, β and η, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters α, β and η of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.
    • 一种用于控制电子束光刻系统中的邻近效应校正的方法。 控制曝光以便在符合设计数据的处理之后获得所得到的图案。 在第一步骤中,暴露任意设置模式,而不应用用于控制接近校正的处理。 测量所得测试结构的几何形状并获得一组测量数据。 在数值范围内,参数α,β和eta的基本输入参数从测量数据集中推导出来。 通过将控制功能的至少基本输入参数α,β和eta单独地改变到测量数据集,从而获得优化的参数集合来适配模型。 在根据设计数据曝光图案期间,将校正功能应用于电子束光刻系统的曝光控制。
    • 10. 发明授权
    • Method and device for exposing a substrate to light
    • 将基板曝光的方法和装置
    • US06600162B1
    • 2003-07-29
    • US09600477
    • 2000-09-21
    • Peter HahmannDirk BeyerDorothee KrauhsThomas Elster
    • Peter HahmannDirk BeyerDorothee KrauhsThomas Elster
    • H05H300
    • B82Y10/00B82Y40/00H01J37/026H01J37/3174H01J2237/004
    • The invention concerns a method for exposing a substrate (1) equipped with an n-layer photoresist system (2), an electrically conductive connection being created between a ground potential and the substrate (1) and/or at least one of the layers S1 through Sn of the photoresist system (2). The invention furthermore concerns an arrangement for carrying out said method. According to the present invention, what is achieved in a single process step is that by way of spring elements E1 through E4, a contact tip K1 is advanced as far as the layer S1, a contact tip K2 is advanced through the layer S1 as far as the layer S2, a contact tip K3 is advanced through the layer S1 and S2 as far as the layer S3, and so forth. The electrical charges from the layer S1 are dissipated to the ground potential via the contact tip K1, the charges from the layer S2 via the contact tip K2, etc., and/or and from the substrate (1) via a contact tip K4.
    • 本发明涉及一种用于暴露具有n层光致抗蚀剂系统(2)的衬底(1)的方法,在接地电位和衬底(1)之间产生的导电连接和/或层S1中的至少一个 通过光致抗蚀剂体系(2)的Sn。 本发明还涉及用于执行所述方法的装置。 根据本发明,在单个工艺步骤中实现的是通过弹簧元件E1至E4,接触尖端K1前进到层S1,接触尖端K2通过层S1前进到远 作为层S2,接触尖端K3通过层S1和S2前进直到层S3等等。 来自层S1的电荷经由接触尖端K1,来自层S2的电荷经由接触尖端K2等和/或从衬底(1)经由接触尖端K4消散到接地电位。