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1. 发明授权

US07435517B2 Method for reducing the fogging effect 失效
标题翻译：降低雾化效果的方法
公开(公告)号：US07435517B2
公开(公告)日：2008-10-14
申请号：US11165500
申请日：2005-06-23
申请人： Peter Hudek , Dirk Beyer , Lemke Melchior
发明人： Peter Hudek , Dirk Beyer , Lemke Melchior
IPC分类号： G03C5/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , Y10S430/143
摘要： A method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which conforms to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimized set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.
摘要翻译：一种用于减小电子束光刻系统中的起雾效应的方法，其中控制曝光以便在符合设计数据的处理之后获得所得到的图案。通过单独更改控制功能的基本输入参数来拟合雾化效果的模型，根据接近校正器中使用的内核类型选择功能类型。考虑邻近效应，并获得一组优化的参数，以获得接近和起雾效果的共同控制功能。使用电子束光刻系统的图案写入由单一组合接近效应控制功能和雾化效果控制功能在仅使用与标准接近校正器中实现的相同算法的一个数据处理步骤中控制。

2. 发明授权

US07141808B2 Device and method for maskless AFM microlithography 有权
标题翻译：无掩模AFM微光刻的装置和方法
公开(公告)号：US07141808B2
公开(公告)日：2006-11-28
申请号：US10508478
申请日：2003-03-14
申请人： Ivo Rangelow , Tzwetan Ivanov , Peter Hudek , Olaf Fortagne
发明人： Ivo Rangelow , Tzwetan Ivanov , Peter Hudek , Olaf Fortagne
IPC分类号： H01J37/30
CPC分类号： H01J37/3174 , G01Q80/00 , G11B9/14 , G11B9/1409 , H01J37/3177
摘要： The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.
摘要翻译：本发明涉及无掩模微光刻的装置和方法。几个微结构的悬臂（2）布置在阵列（26）中，并且致动器集成在阵列（26）的每个悬臂（2）中。提供电源和控制单元（24），所述单元调整悬臂（6）相对于将通过适当电压构造的表面（4）的距离。针（6）的每一点连接到所述电源和控制单元（24）。为了实现本发明的方法，具有悬臂的阵列（26）与每个表面（6）相连接的表面（4）与表面（4）接触，以使结构的点针（6）布置成靠近要被构造的表面（4）。

3. 发明授权

US07241542B2 Process for controlling the proximity effect correction 有权
标题翻译：用于控制邻近效应校正的过程
公开(公告)号：US07241542B2
公开(公告)日：2007-07-10
申请号：US11165312
申请日：2005-06-23
申请人： Peter Hudek , Dirk Beyer
发明人： Peter Hudek , Dirk Beyer
IPC分类号： G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , Y10S430/143
摘要： A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters α, β and η, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters α, β and η of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.
摘要翻译：一种用于控制电子束光刻系统中的邻近效应校正的方法。控制曝光以便在符合设计数据的处理之后获得所得到的图案。在第一步骤中，暴露任意设置模式，而不应用用于控制接近校正的处理。测量所得测试结构的几何形状并获得一组测量数据。在数值范围内，参数α，β和eta的基本输入参数从测量数据集中推导出来。通过将控制功能的至少基本输入参数α，β和eta单独地改变到测量数据集，从而获得优化的参数集，来适配模型。在根据设计数据曝光图案期间，将校正功能应用于电子束光刻系统的曝光控制。

4. 发明申请

US20050287451A1 Method for reducing the fogging effect 失效
标题翻译：降低雾化效果的方法
公开(公告)号：US20050287451A1
公开(公告)日：2005-12-29
申请号：US11165500
申请日：2005-06-23
申请人： Peter Hudek , Dirk Beyer , Lemke Melchior
发明人： Peter Hudek , Dirk Beyer , Lemke Melchior
IPC分类号： G03C5/00 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , Y10S430/143
摘要： Method for reducing the fogging effect in an electron beam lithography system wherein the exposure is controlled in order to obtain resulting pattern after processing which are conform to design data. A model for the fogging effect is fitted by individually changing at least the basic input parameters of the control function, the function type is chosen in accordance to the Kernel type used in the proximity corrector. The proximity effect is considered as well and an optimised set of parameters is obtained in order to gain a common control function for the proximity and fogging effect. The pattern writing with an e-beam lithographic system is controlled by the single combined proximity effect control function and the fogging effect control function in only one data-processing step using the same algorithms as are implemented in a standard proximity corrector.
摘要翻译：减少电子束光刻系统中的起雾效果的方法，其中控制曝光以获得符合设计数据的加工后的结果图案。通过单独更改控制功能的基本输入参数来拟合雾化效果的模型，根据接近校正器中使用的内核类型选择功能类型。考虑邻近效应，并获得一组优化的参数，以获得接近和起雾效果的共同控制功能。使用电子束光刻系统的图案写入由单一组合接近效应控制功能和雾化效果控制功能在仅使用与标准接近校正器中实现的相同算法的一个数据处理步骤中控制。

5. 发明申请

US20050287450A1 Process for controlling the proximity effect correction 有权
标题翻译：用于控制邻近效应校正的过程
公开(公告)号：US20050287450A1
公开(公告)日：2005-12-29
申请号：US11165312
申请日：2005-06-23
申请人： Peter Hudek , Dirk Beyer
发明人： Peter Hudek , Dirk Beyer
IPC分类号： G03C5/00 , G03F1/00 , H01J37/317
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3174 , H01J2237/31769 , Y10S430/143
摘要： A process for controlling the proximity effect correction in an electron beam lithography system. The exposure is controlled in order to obtain resulting pattern after processing which is conform to design data. In a first step an arbitrary set patterns is exposed without applying the process for controlling the proximity correction. The geometry of the resulting test structures is measured and a set of measurement data is obtained. Within a numerical range basic input parameters for the parameters α, β and η, are derived from the set of measurement data. A model is fitted by individually changing at least the basic input parameters α, β and η of a control function to measurement data set and thereby obtaining an optimised set of parameters. The correction function is applied to an exposure control of the electron beam lithography system during the exposure of a pattern according to the design data.
摘要翻译：一种用于控制电子束光刻系统中的邻近效应校正的方法。控制曝光以便在符合设计数据的处理之后获得所得到的图案。在第一步骤中，暴露任意设置模式，而不应用用于控制接近校正的处理。测量所得测试结构的几何形状并获得一组测量数据。在数值范围内，参数α，β和eta的基本输入参数从测量数据集中推导出来。通过将控制功能的至少基本输入参数α，β和eta单独地改变到测量数据集，从而获得优化的参数集合来适配模型。在根据设计数据曝光图案期间，将校正功能应用于电子束光刻系统的曝光控制。

6. 发明申请

US20050225011A1 Device and method for maskless afm microlithography 有权
标题翻译：无掩模微光刻的装置和方法
公开(公告)号：US20050225011A1
公开(公告)日：2005-10-13
申请号：US10508478
申请日：2003-03-14
申请人： Ivo Rangelow , Tzwetan Ivanov , Peter Hudek , Olaf Fortagne
发明人： Ivo Rangelow , Tzwetan Ivanov , Peter Hudek , Olaf Fortagne
IPC分类号： G01Q80/00 , G11B9/00 , H01J37/317 , H01J37/30
CPC分类号： H01J37/3174 , G01Q80/00 , G11B9/14 , G11B9/1409 , H01J37/3177
摘要： The invention relates to a device and a method for maskless microlithography. Several microstructured cantilevers (2) are arranged in an array (26) and an actuator is integrated in each of the cantilevers (2) of the array (26). A power supply and control unit (24) is provided, said unit adjusting the distance of the cantilevers (6) relative to a surface (4) that is to be structured by means of an appropriate voltage. Every point of the needles (6) is connected to said power supply and control unit (24). In order to implement the inventive method, an array (26) with cantilevers, each of which carries a point of a needle (6), is brought into contact with a surface (4) to be structured in such a way that the points of the needles (6) are arranged close to the surface (4) to be structured.
摘要翻译：本发明涉及无掩模微光刻的装置和方法。几个微结构的悬臂（2）布置在阵列（26）中，并且致动器集成在阵列（26）的每个悬臂（2）中。提供电源和控制单元（24），所述单元调整悬臂（6）相对于将通过适当电压构造的表面（4）的距离。针（6）的每一点连接到所述电源和控制单元（24）。为了实现本发明的方法，具有悬臂的阵列（26）与每个表面（6）相连接的表面（4）与表面（4）接触，以使结构的点针（6）布置成靠近要被构造的表面（4）。

7. 发明授权

US6136160A Process for producing a carbon film on a substrate 失效
标题翻译：在基材上制造碳膜的方法
公开(公告)号：US6136160A
公开(公告)日：2000-10-24
申请号：US349936
申请日：1999-07-08
申请人： Pavol Hrkut , Peter Hudek , Ivaylo W. Rangelow , Hans Loschner
发明人： Pavol Hrkut , Peter Hudek , Ivaylo W. Rangelow , Hans Loschner
IPC分类号： C23C14/34 , C23C14/06 , C23C14/35 , C23C14/58 , C23C14/00
CPC分类号： C23C14/5806 , B82Y30/00 , C23C14/0605 , C23C14/35
摘要： In order to process a carbon film carbon is deposited on a substrate by sputtering from a carbon sputter target in a gas mixture which contains nitrogen in a minimum proportion of 20% and a sputter gas at a predetermined gas pressure and the substrate is then subjected under a high vacuum to thermal treatment at a temperature above 100.degree. C. The carbon films produced in this manner comprise a fiber and/or tube structure which extends substantially perpendicular to the film.
摘要翻译：为了处理碳膜，通过溅射从碳溅射靶在含有最小比例的20％的氮气和预定气体压力的溅射气体的气体混合物中将碳碳沉积在基底上，然后将基底在在高于100℃的温度下进行热处理的高真空。以这种方式制造的碳膜包括基本垂直于膜延伸的纤维和/或管结构。

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