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1. 发明申请

US20070092648A1 Chalcogenide solar cells 有权
标题翻译：硫族化物太阳能电池
公开(公告)号：US20070092648A1
公开(公告)日：2007-04-26
申请号：US11290633
申请日：2005-11-29
申请人： Jeroen Duren , Brent Bollman , Martin Roscheisen , Brian Sager
发明人： Jeroen Duren , Brent Bollman , Martin Roscheisen , Brian Sager
IPC分类号： C23C16/00 , H01L21/02 , C07F5/00
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA-chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了一种用于形成IB-IIIA族硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，其包括用元素硫族元素材料的外壳涂覆的IB和/或IIIA族元素。制备IB-IIIA族硫族化合物化合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

2. 发明申请

US20070163641A1 High-throughput printing of semiconductor precursor layer from inter-metallic nanoflake particles 审中-公开
标题翻译：半导体前体层从金属间微纳米颗粒的高通量印刷
公开(公告)号：US20070163641A1
公开(公告)日：2007-07-19
申请号：US11394849
申请日：2006-03-30
申请人： Jeroen Duren , Matthew Robinson , Brian Sager
发明人： Jeroen Duren , Matthew Robinson , Brian Sager
IPC分类号： H01L31/00
CPC分类号： H01L31/0322 , C23C18/1204 , H01L31/0749 , H01L31/18 , Y02E10/541
摘要： Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. In one embodiment, at least one set of the particles in the ink may be inter-metallic flake particles (microflake or nanoflake) containing at least one group IB-IIIA inter-metallic alloy phase.
摘要翻译：提供了用于在合适的条件下在合适的载体中转化非平面或平面前体材料的方法和装置，以产生具有等于原料或前体材料的化学计量比的化学计量比的平面颗粒的分散体，即使在选择性力沉降之后。特别地，平面颗粒更容易分散，形成更致密的涂层（或形成具有更多颗粒间接触面积的涂层），并在比球形纳米颗粒制成的对应物更低的温度和/或时间下退火成熔融的致密膜。这些平面颗粒可以是具有高纵横比的纳米片。由纳米片形成的致密膜特别适用于形成光电器件。在一个实施方案中，油墨中的至少一组颗粒可以是含有至少一种IB-IIIA族金属间合金相的金属间薄片（微花纹或纳米薄片）。

3. 发明申请

US20060174934A1 Optoelectronic device and frabrication method 审中-公开
标题翻译：光电器件及其制造方法
公开(公告)号：US20060174934A1
公开(公告)日：2006-08-10
申请号：US11375413
申请日：2006-03-13
申请人： Brian Sager , Martin Roscheisen , Klaus Petristsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
发明人： Brian Sager , Martin Roscheisen , Klaus Petristsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
IPC分类号： H01L31/042 , H01L31/00
CPC分类号： H01L51/4226 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0064 , H01L51/0078 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architected (e.g., surfactant-templated) film having interconnected pores that are accessible from both the underlying and overlying layers. A pore-filling material substantially fills the pores. The interconnected pores have diameters of about 1-100 nm and are distributed in a substantially uniform fashion with neighboring pores separated by a distance of about 1-100 nm. The nano-architected porous film and the pore-filling material have complementary charge-transfer properties with respect to each other, i.e., one is an electron-acceptor and the other is a hole-acceptor. The nano-architected porous, film may be formed on a substrate by a surfactant temptation technique such as evaporation-induced self-assembly. A solar power generation system may include an array of such optoelectronic devices in the form of photovoltaic cells with one or more cells in the array having one or more porous charge-splitting networks disposed between an electron-accepting electrode and a hole-accepting electrode.
摘要翻译：公开了电荷分解网络，光电子器件，制造光电器件的方法，利用这种器件的发电系统以及用于制造电荷分解网络的方法。光电子器件可以包括具有互连孔的多孔纳米结构（例如，表面活性剂模板化）膜，其可以从下面的层和上层两者接近。孔填充材料基本上填充孔。相互连通的孔具有大约1-100nm的直径，并以基本上均匀的方式分布，其中相邻的孔分开约1-100nm的距离。纳米构造的多孔膜和孔隙填充材料相互之间具有互补的电荷转移性质，即一个是电子受体，另一个是空穴受体。纳米结构的多孔膜可以通过表面活性剂诱导技术如蒸发诱导的自组装形成在基底上。太阳能发电系统可以包括光伏电池形式的这种光电子器件的阵列，阵列中的一个或多个电池具有设置在电子接受电极和空穴接受电极之间的一个或多个多孔电荷分解网络。

4. 发明申请

US20050121068A1 PHOTOVOLTAIC DEVICES FABRICATED BY GROWTH FROM POROUS TEMPLATE 失效
标题翻译：由多孔模板生长制成的光伏器件
公开(公告)号：US20050121068A1
公开(公告)日：2005-06-09
申请号：US10443456
申请日：2003-05-21
申请人： Brian Sager , Martin Roscheisen , Klus Petritsch , Karl Pichler , Jacqueline Fidanza , Dong Yu
发明人： Brian Sager , Martin Roscheisen , Klus Petritsch , Karl Pichler , Jacqueline Fidanza , Dong Yu
IPC分类号： H01L20060101 , H01L31/00 , H01L31/0256 , H01L31/0352 , H01L31/042 , H01L31/18
CPC分类号： H01L51/4213 , H01L51/0036 , H01L51/0037 , H01L51/422 , H01L51/4253 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture where two more materials having different electron affinities are regularly arrayed such that their presence alternates within distances of between about 1 nm and about 100 nm. The materials are present in a matrix based on a porous template with an array of template pores. The porous template is formed by anodizing a layer of metal. A photovoltaic device may include such a porous template disposed between a base electrode and a transparent conducting electrode. A first charge-transfer material fills the template pores, A second (complementary) charge-transfer material fills additional space not occupied by the first charge-transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征可以在于其中两个具有不同电子亲和力的材料被规则排列的结构，使得它们的存在在约1nm和约100nm之间的距离内交替。该材料基于具有模板孔阵列的多孔模板存在于基质中。通过阳极氧化一层金属形成多孔模板。光伏器件可以包括设置在基极和透明导电电极之间的这种多孔模板。第一电荷转移材料填充模板孔。第二（互补）电荷转移材料填充未被第一电荷转移材料占据的附加空间。

5. 发明申请

US20070181177A9 Optoelectronic device and fabrication method 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20070181177A9
公开(公告)日：2007-08-09
申请号：US10290119
申请日：2002-11-05
申请人： Brian Sager , Martin Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
发明人： Brian Sager , Martin Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
IPC分类号： H01L31/00
CPC分类号： H01L51/4226 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0064 , H01L51/0078 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architected (e.g., surfactant-templated) film having interconnected pores that are accessible from both the underlying and overlying layers. A pore-filling material substantially fills the pores. The interconnected pores have diameters of about 1-100 nm and are distributed in a substantially uniform fashion with neighboring pores separated by a distance of about 1-100 nm. The nano-architected porous film and the pore-filling, material have complementary charge-transfer properties with respect to each other, i.e., one is an electron-acceptor and the other is a hole-acceptor. The nano-architected porous, film may be formed on a substrate by a surfactant temptation technique such as evaporation-induced self-assembly. A solar power generation system may include an array of such optoelectronic devices in the form of photovoltaic cells with one or more cells in the array having one or more porous charge-splitting networks disposed between an electron-accepting electrode and a hole-accepting electrode.
摘要翻译：公开了电荷分解网络，光电子器件，制造光电器件的方法，利用这种器件的发电系统以及用于制造电荷分解网络的方法。光电子器件可以包括具有互连孔的多孔纳米结构（例如，表面活性剂模板化）膜，其可以从下面的层和上层两者接近。孔填充材料基本上填充孔。相互连通的孔具有大约1-100nm的直径，并以基本上均匀的方式分布，其中相邻的孔分开约1-100nm的距离。纳米结构的多孔膜和孔填充材料相对于彼此具有互补的电荷转移性质，即一个是电子受体，另一个是空穴受体。纳米结构的多孔膜可以通过表面活性剂诱导技术如蒸发诱导的自组装形成在基底上。太阳能发电系统可以包括光伏电池形式的这种光电子器件的阵列，阵列中的一个或多个电池具有设置在电子接受电极和空穴接受电极之间的一个或多个多孔电荷分解网络。

6. 发明申请

US20050183768A1 Photovoltaic thin-film cell produced from metallic blend using high-temperature printing 失效
标题翻译：使用高温印刷由金属混合物制成的光伏薄膜电池
公开(公告)号：US20050183768A1
公开(公告)日：2005-08-25
申请号：US10836307
申请日：2004-04-30
申请人： Martin Roscheisen , Brian Sager
发明人： Martin Roscheisen , Brian Sager
IPC分类号： A61K9/16 , A61K9/50 , B82B3/00 , H01L21/00 , H01L31/00 , H01L31/0256 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/127 , C23C18/1295 , H01L31/0322 , H01L31/042 , H01L31/0749 , H01L31/18 , H01L31/186 , Y02E10/541 , Y02P70/521
摘要： The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.
摘要翻译： IB-IIIA-VIA光伏电池活性层的金属组分可以通过使用比较低的熔点（例如小于约500℃）的金属如铟和镓直接涂覆在基底上。具体地，可以通过将熔融IIIA族金属与IB族和（任选的）IIIA族金属的固体纳米颗粒共混来制造CI（G）S薄膜太阳能电池。熔融混合物可以以熔融状态涂覆在基材上，例如使用涂覆技术，例如热浸，热微凹版和/或气刀涂布。在涂覆之后，可以将基底冷却并将膜退火，例如在含硫或含硒气氛中。

7. 发明申请

US20050098205A1 Photovoltaic devices fabricated from insulating nanostructured template 失效
标题翻译：由绝缘纳米结构模板制造的光伏器件
公开(公告)号：US20050098205A1
公开(公告)日：2005-05-12
申请号：US10771250
申请日：2004-02-02
申请人： Martin Roscheisen , Brian Sager , Karl Pichler
发明人： Martin Roscheisen , Brian Sager , Karl Pichler
IPC分类号： H01L31/00 , H01L31/0248 , H01L31/0352 , H01L31/042 , H01L51/00 , H01L51/30
CPC分类号： H01L51/4233 , B82Y10/00 , H01L31/0352 , H01L31/03529 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0047 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0078 , H01L51/0094 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L51/4253 , H01L51/447 , Y02E10/549
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture with an inorganic insulating nanostructured template having template elements between about 1 nm and about 500 nm in diameter with a elements density of between about 1012 elements/m2 and about 1016 elements/m2. A first charge-transfer material coats the walls of the template elements leaving behind additional space. A second charge-transfer material fills the additional space such that the first and second charge-transfer materials are volumetrically interdigitated. At least one charge transfer material has an absorbance of greater than about 103/cm. The first and second charge-transfer materials have complementary charge transfer properties with respect to each other. A lowest unoccupied molecular orbital (LUMO) or conduction band of the first charge-transfer material is offset from a LUMO or conduction band of the second charge-transfer material by greater than about 0.2 eV. An electrically conductive material may optionally be disposed between the nanostructured template and the first charge-transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征在于具有无机绝缘纳米结构模板的结构，其具有直径在约1nm至约500nm之间的模板元件，元件密度为约10 12个元件/ m 2 和大约10个/ 16个元素/ m 2。第一电荷转移材料涂覆模板元件的壁，留下额外的空间。第二电荷转移材料填充附加空间，使得第一和第二电荷转移材料是体积相互交错的。至少一种电荷转移材料具有大于约10 3 / cm 3的吸光度。第一和第二电荷转移材料相对于彼此具有互补的电荷转移性质。第一电荷转移材料的最低未占分子轨道（LUMO）或导带从第二电荷转移材料的LUMO或导带偏移大于约0.2eV。导电材料可以任选地设置在纳米结构化模板和第一电荷转移材料之间。

8. 发明申请

US20050098204A1 Photovoltaic devices fabricated from nanostructured template 失效
标题翻译：由纳米结构模板制造的光伏器件
公开(公告)号：US20050098204A1
公开(公告)日：2005-05-12
申请号：US10771092
申请日：2004-02-02
申请人： Martin Roscheisen , Brian Sager , Karl Pichler
发明人： Martin Roscheisen , Brian Sager , Karl Pichler
IPC分类号： B81B1/00 , B82B3/00 , C07C61/00 , C07C63/42 , C08G61/00 , C09D5/24 , H01L31/00 , H01L31/0256 , H01L31/0352 , H01L31/042 , H01L31/06 , H01L51/00 , H01L51/30
CPC分类号： B82Y10/00 , B82Y30/00 , H01L31/0352 , H01L31/03529 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0047 , H01L51/0051 , H01L51/0052 , H01L51/0062 , H01L51/0064 , H01L51/0078 , H01L51/0094 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L51/4233 , H01L51/4253 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture having a nanostructured template made from an n-type first charge transfer material with template elements between about 1 nm and about 500 nm in diameter with about 1012 to 1016 elements/m2. A p-type second charge-transfer material optionally coats the walls of the template elements leaving behind additional space. A p-type third charge-transfer material fills the additional space volumetrically interdigitating with the second charge transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征在于具有由n型第一电荷转移材料制成的纳米结构化模板的结构，其中模板元件的直径在约1nm至约500nm之间，具有约10 12至10“ > 16 元素/ m <2> 。 p型第二电荷转移材料任选地涂覆模板元件的壁，留下额外的空间。 p型第三电荷转移材料填充与第二电荷转移材料体积相互交错的附加空间。

9. 发明申请

US20050095422A1 Inorganic/organic hybrid nanolaminate barrier film 有权
标题翻译：无机/有机杂化纳米酸盐屏障膜
公开(公告)号：US20050095422A1
公开(公告)日：2005-05-05
申请号：US10698988
申请日：2003-10-31
申请人： Brian Sager , Martin Roscheisen
发明人： Brian Sager , Martin Roscheisen
IPC分类号： B05D7/00 , B32B1/00 , B32B5/16 , B32B13/00 , B65D1/00 , B65D65/40 , H01L51/52
CPC分类号： B05D7/56 , B05D1/005 , B05D1/02 , B05D1/18 , B05D1/30 , B05D3/0254 , B05D5/083 , B82Y30/00 , H01L51/5256 , Y10T428/13 , Y10T428/1303 , Y10T428/1352 , Y10T428/1359 , Y10T428/139 , Y10T428/265 , Y10T428/2991 , Y10T428/2998
摘要： An inorganic/organic hybrid nanolaminate barrier film has a plurality of layers of an inorganic material that alternate with a plurality of layers of an organic material. Such a barrier film can be fabricated using nanocomposite self-assembly techniques based on sol-gel chemistry.
摘要翻译：无机/有机杂化的纳米酸盐阻隔膜具有与多层有机材料交替的多层无机材料。可以使用基于溶胶 - 凝胶化学的纳米复合自组装技术来制造这种阻挡膜。

10. 发明申请

US20120104324A1 CHALCOGENIDE SOLAR CELLS 审中-公开
标题翻译： CHALCOGENIDE太阳能电池
公开(公告)号：US20120104324A1
公开(公告)日：2012-05-03
申请号：US13286739
申请日：2011-11-01
申请人： Jeroen K. J. Van Duren , Brent J. Bollman , Martin Roscheisen , Brian Sager
发明人： Jeroen K. J. Van Duren , Brent J. Bollman , Martin Roscheisen , Brian Sager
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/0272 , B82Y30/00
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA- chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，其包括用元素硫族元素材料的外壳涂覆的IB和/或IIIA族元素。制备IB-III族 - 硫族化合物组合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

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