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1. 发明申请

US20060174934A1 Optoelectronic device and frabrication method 审中-公开
标题翻译：光电器件及其制造方法
公开(公告)号：US20060174934A1
公开(公告)日：2006-08-10
申请号：US11375413
申请日：2006-03-13
申请人： Brian Sager , Martin Roscheisen , Klaus Petristsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
发明人： Brian Sager , Martin Roscheisen , Klaus Petristsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
IPC分类号： H01L31/042 , H01L31/00
CPC分类号： H01L51/4226 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0064 , H01L51/0078 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architected (e.g., surfactant-templated) film having interconnected pores that are accessible from both the underlying and overlying layers. A pore-filling material substantially fills the pores. The interconnected pores have diameters of about 1-100 nm and are distributed in a substantially uniform fashion with neighboring pores separated by a distance of about 1-100 nm. The nano-architected porous film and the pore-filling material have complementary charge-transfer properties with respect to each other, i.e., one is an electron-acceptor and the other is a hole-acceptor. The nano-architected porous, film may be formed on a substrate by a surfactant temptation technique such as evaporation-induced self-assembly. A solar power generation system may include an array of such optoelectronic devices in the form of photovoltaic cells with one or more cells in the array having one or more porous charge-splitting networks disposed between an electron-accepting electrode and a hole-accepting electrode.
摘要翻译：公开了电荷分解网络，光电子器件，制造光电器件的方法，利用这种器件的发电系统以及用于制造电荷分解网络的方法。光电子器件可以包括具有互连孔的多孔纳米结构（例如，表面活性剂模板化）膜，其可以从下面的层和上层两者接近。孔填充材料基本上填充孔。相互连通的孔具有大约1-100nm的直径，并以基本上均匀的方式分布，其中相邻的孔分开约1-100nm的距离。纳米构造的多孔膜和孔隙填充材料相互之间具有互补的电荷转移性质，即一个是电子受体，另一个是空穴受体。纳米结构的多孔膜可以通过表面活性剂诱导技术如蒸发诱导的自组装形成在基底上。太阳能发电系统可以包括光伏电池形式的这种光电子器件的阵列，阵列中的一个或多个电池具有设置在电子接受电极和空穴接受电极之间的一个或多个多孔电荷分解网络。

2. 发明申请

US20070181177A9 Optoelectronic device and fabrication method 有权
标题翻译：光电器件及其制造方法
公开(公告)号：US20070181177A9
公开(公告)日：2007-08-09
申请号：US10290119
申请日：2002-11-05
申请人： Brian Sager , Martin Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
发明人： Brian Sager , Martin Roscheisen , Klaus Petritsch , Greg Smestad , Jacqueline Fidanza , Gregory Miller , Dong Yu
IPC分类号： H01L31/00
CPC分类号： H01L51/4226 , H01L51/0034 , H01L51/0035 , H01L51/0036 , H01L51/0038 , H01L51/0052 , H01L51/0053 , H01L51/0064 , H01L51/0078 , H01L51/4253 , Y02E10/549 , Y02P70/521
摘要： Charge-splitting networks, optoelectronic devices, methods for making optoelectronic devices, power generation systems utilizing such devices and method for making charge-splitting networks are disclosed. An optoelectronic device may include a porous nano-architected (e.g., surfactant-templated) film having interconnected pores that are accessible from both the underlying and overlying layers. A pore-filling material substantially fills the pores. The interconnected pores have diameters of about 1-100 nm and are distributed in a substantially uniform fashion with neighboring pores separated by a distance of about 1-100 nm. The nano-architected porous film and the pore-filling, material have complementary charge-transfer properties with respect to each other, i.e., one is an electron-acceptor and the other is a hole-acceptor. The nano-architected porous, film may be formed on a substrate by a surfactant temptation technique such as evaporation-induced self-assembly. A solar power generation system may include an array of such optoelectronic devices in the form of photovoltaic cells with one or more cells in the array having one or more porous charge-splitting networks disposed between an electron-accepting electrode and a hole-accepting electrode.
摘要翻译：公开了电荷分解网络，光电子器件，制造光电器件的方法，利用这种器件的发电系统以及用于制造电荷分解网络的方法。光电子器件可以包括具有互连孔的多孔纳米结构（例如，表面活性剂模板化）膜，其可以从下面的层和上层两者接近。孔填充材料基本上填充孔。相互连通的孔具有大约1-100nm的直径，并以基本上均匀的方式分布，其中相邻的孔分开约1-100nm的距离。纳米结构的多孔膜和孔填充材料相对于彼此具有互补的电荷转移性质，即一个是电子受体，另一个是空穴受体。纳米结构的多孔膜可以通过表面活性剂诱导技术如蒸发诱导的自组装形成在基底上。太阳能发电系统可以包括光伏电池形式的这种光电子器件的阵列，阵列中的一个或多个电池具有设置在电子接受电极和空穴接受电极之间的一个或多个多孔电荷分解网络。

3. 发明申请

US20050121068A1 PHOTOVOLTAIC DEVICES FABRICATED BY GROWTH FROM POROUS TEMPLATE 失效
标题翻译：由多孔模板生长制成的光伏器件
公开(公告)号：US20050121068A1
公开(公告)日：2005-06-09
申请号：US10443456
申请日：2003-05-21
申请人： Brian Sager , Martin Roscheisen , Klus Petritsch , Karl Pichler , Jacqueline Fidanza , Dong Yu
发明人： Brian Sager , Martin Roscheisen , Klus Petritsch , Karl Pichler , Jacqueline Fidanza , Dong Yu
IPC分类号： H01L20060101 , H01L31/00 , H01L31/0256 , H01L31/0352 , H01L31/042 , H01L31/18
CPC分类号： H01L51/4213 , H01L51/0036 , H01L51/0037 , H01L51/422 , H01L51/4253 , H01L51/447 , Y02E10/549 , Y02P70/521
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture where two more materials having different electron affinities are regularly arrayed such that their presence alternates within distances of between about 1 nm and about 100 nm. The materials are present in a matrix based on a porous template with an array of template pores. The porous template is formed by anodizing a layer of metal. A photovoltaic device may include such a porous template disposed between a base electrode and a transparent conducting electrode. A first charge-transfer material fills the template pores, A second (complementary) charge-transfer material fills additional space not occupied by the first charge-transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征可以在于其中两个具有不同电子亲和力的材料被规则排列的结构，使得它们的存在在约1nm和约100nm之间的距离内交替。该材料基于具有模板孔阵列的多孔模板存在于基质中。通过阳极氧化一层金属形成多孔模板。光伏器件可以包括设置在基极和透明导电电极之间的这种多孔模板。第一电荷转移材料填充模板孔。第二（互补）电荷转移材料填充未被第一电荷转移材料占据的附加空间。

4. 发明申请

US20050183767A1 Solution-based fabrication of photovoltaic cell 失效
标题翻译：光伏电池基于解决方案的制造
公开(公告)号：US20050183767A1
公开(公告)日：2005-08-25
申请号：US10782017
申请日：2004-02-19
申请人： Dong Yu , Jacqueline Fidanza , Martin Roscheisen , Brian Sager
发明人： Dong Yu , Jacqueline Fidanza , Martin Roscheisen , Brian Sager
IPC分类号： A61K9/16 , A61K9/50 , B82B3/00 , H01L21/00 , H01L31/00 , H01L31/0256 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/1295 , H01L31/0322 , H01L31/0749 , H01L31/18 , Y02E10/541 , Y02P70/521
摘要： An ink for forming CIGS photovoltaic cell active layers is disclosed along with methods for making the ink, methods for making the active layers and a solar cell made with the active layer. The ink contains a mixture of nanoparticles of elements of groups IB, IIIA and (optionally) VIA. The particles are in a desired particle size range of between about 1 nm and about 500 nm in diameter, where a majority of the mass of the particles comprises particles ranging in size from no more than about 40% above or below an average particle size or, if the average particle size is less than about 5 nanometers, from no more than about 2 nanometers above or below the average particle size. The use of such ink avoids the need to expose the material to an H2Se gas during the construction of a photovoltaic cell and allows more uniform melting during film annealing, more uniform intermixing of nanoparticles, and allows higher quality absorber films to be formed.
摘要翻译：公开了一种用于形成CIGS光伏电池有源层的墨水以及用于制造墨水的方法，制备活性层的方法和由活性层制成的太阳能电池。油墨含有IB，IIIA和（任选地）VIA组分的纳米颗粒的混合物。颗粒的直径在约1nm至约500nm之间的所需粒度范围，其中大部分颗粒的质量包括尺寸不超过平均粒度的约40％或以下的颗粒，或如果平均粒度小于约5纳米，高于或低于平均粒度的不超过约2纳米。使用这种墨水避免了在构建光伏电池期间将材料暴露于H 2 S 2 Se气体，并且允许在膜退火期间更均匀的熔融，更均匀的纳米颗粒的混合，并且允许更高的要形成的质量吸收膜。

5. 发明申请

US20070092648A1 Chalcogenide solar cells 有权
标题翻译：硫族化物太阳能电池
公开(公告)号：US20070092648A1
公开(公告)日：2007-04-26
申请号：US11290633
申请日：2005-11-29
申请人： Jeroen Duren , Brent Bollman , Martin Roscheisen , Brian Sager
发明人： Jeroen Duren , Brent Bollman , Martin Roscheisen , Brian Sager
IPC分类号： C23C16/00 , H01L21/02 , C07F5/00
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA-chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了一种用于形成IB-IIIA族硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，其包括用元素硫族元素材料的外壳涂覆的IB和/或IIIA族元素。制备IB-IIIA族硫族化合物化合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

6. 发明申请

US20050183768A1 Photovoltaic thin-film cell produced from metallic blend using high-temperature printing 失效
标题翻译：使用高温印刷由金属混合物制成的光伏薄膜电池
公开(公告)号：US20050183768A1
公开(公告)日：2005-08-25
申请号：US10836307
申请日：2004-04-30
申请人： Martin Roscheisen , Brian Sager
发明人： Martin Roscheisen , Brian Sager
IPC分类号： A61K9/16 , A61K9/50 , B82B3/00 , H01L21/00 , H01L31/00 , H01L31/0256 , H01L31/0392 , H01L31/18
CPC分类号： H01L31/06 , B82Y5/00 , B82Y10/00 , B82Y30/00 , C23C18/1204 , C23C18/1266 , C23C18/127 , C23C18/1295 , H01L31/0322 , H01L31/042 , H01L31/0749 , H01L31/18 , H01L31/186 , Y02E10/541 , Y02P70/521
摘要： The metallic components of a IB-IIIA-VIA photovoltaic cell active layer may be directly coated onto a substrate by using relatively low melting point (e.g., less than about 500° C.) metals such as indium and gallium. Specifically, CI(G)S thin-film solar cells may be fabricated by blending molten group IIIA metals with solid nanoparticles of group IB and (optionally) group IIIA metals. The molten mixture may be coated onto a substrate in the molten state, e.g., using coating techniques such as hot-dipping, hot microgravure and/or air-knife coating. After coating, the substrate may be cooled and the film annealed, e.g., in a sulfur-containing or selenium-containing atmosphere.
摘要翻译： IB-IIIA-VIA光伏电池活性层的金属组分可以通过使用比较低的熔点（例如小于约500℃）的金属如铟和镓直接涂覆在基底上。具体地，可以通过将熔融IIIA族金属与IB族和（任选的）IIIA族金属的固体纳米颗粒共混来制造CI（G）S薄膜太阳能电池。熔融混合物可以以熔融状态涂覆在基材上，例如使用涂覆技术，例如热浸，热微凹版和/或气刀涂布。在涂覆之后，可以将基底冷却并将膜退火，例如在含硫或含硒气氛中。

7. 发明申请

US20120104324A1 CHALCOGENIDE SOLAR CELLS 审中-公开
标题翻译： CHALCOGENIDE太阳能电池
公开(公告)号：US20120104324A1
公开(公告)日：2012-05-03
申请号：US13286739
申请日：2011-11-01
申请人： Jeroen K. J. Van Duren , Brent J. Bollman , Martin Roscheisen , Brian Sager
发明人： Jeroen K. J. Van Duren , Brent J. Bollman , Martin Roscheisen , Brian Sager
IPC分类号： H01L31/032 , H01L31/0352 , H01L31/0272 , B82Y30/00
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA- chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，其包括用元素硫族元素材料的外壳涂覆的IB和/或IIIA族元素。制备IB-III族 - 硫族化合物组合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

8. 发明授权

US08048477B2 Chalcogenide solar cells 有权
标题翻译：硫族化物太阳能电池
公开(公告)号：US08048477B2
公开(公告)日：2011-11-01
申请号：US11290633
申请日：2005-11-29
申请人： Jeroen K. J. Van Duren , Brent J. Bollman , Martin Roscheisen , Brian Sager
发明人： Jeroen K. J. Van Duren , Brent J. Bollman , Martin Roscheisen , Brian Sager
IPC分类号： B05D5/06
CPC分类号： H01L31/0322 , C23C4/123 , C23C18/1204 , C23C18/1225 , C23C18/1241 , C23C18/127 , C23C24/10 , C23C26/00 , C23C26/02 , H01L51/0026 , H01L51/426 , Y02E10/541 , Y02E10/549
摘要： A precursor material for forming a film of a group IB-IIIA-chalcogenide compound and a method of making this film are disclosed. The film contains group IB-chalcogenide nanoparticles and/or group IIIA-chalcogenide nanoparticles and/or nanoglobules and/or nanodroplets and a source of extra chalcogen. Alternatively, the film may contain core-shell nanoparticles having core nanoparticles include group IB and/or IIIA elements, which are coated with a shell of elemental chalcogen material. The method of making a film of group IB-IIIA-chalcogenide compound includes mixing the nanoparticles and/or nanoglobules and/or nanodroplets to form an ink, depositing the ink on a substrate, heating to melt the extra chalcogen and to react the chalcogen with the group IB and group IIIA elements and/or chalcogenides to form a dense film.
摘要翻译：公开了用于形成IB-IIIA族硫族化合物化合物的膜的前体材料和制备该膜的方法。该膜含有IB族硫族化物纳米颗粒和/或IIIA族硫族化物纳米颗粒和/或纳米金属和/或纳米微滴和额外硫属元素的来源。或者，膜可以包含具有核心纳米颗粒的核 - 壳纳米颗粒，其包括用元素硫族元素材料的外壳涂覆的IB和/或IIIA族元素。制备IB-IIIA族硫族化合物化合物的膜的方法包括混合纳米颗粒和/或纳米金属和/或纳米质子以形成油墨，将油墨沉积在基材上，加热熔化额外的硫属元素并使硫族元素与 IB族和IIIA族元素和/或硫族化物以形成致密膜。

9. 发明申请

US20050186342A1 Formation of CIGS absorber layer materials using atomic layer deposition and high throughput surface treatment 有权
标题翻译：使用原子层沉积和高通量表面处理形成CIGS吸收层材料
公开(公告)号：US20050186342A1
公开(公告)日：2005-08-25
申请号：US10943658
申请日：2004-09-18
申请人： Brian Sager , Martin Roscheisen , Craig Leidholm
发明人： Brian Sager , Martin Roscheisen , Craig Leidholm
IPC分类号： B05D3/12 , C23C16/00 , C23C16/40 , C23C16/455 , C23C16/458 , C23C16/54
CPC分类号： C23C16/45544 , C23C16/405 , C23C16/458 , C23C16/4581 , C23C16/545 , C25D7/0614 , C25D17/02 , H01L31/022425 , H01L31/0322 , H01L31/0392 , H01L31/03926 , H01L31/1864 , H01L31/1876 , Y02E10/541 , Y02P70/521
摘要： An absorber layer may be formed on on a substrate using atomic layer deposition reactions. An absorber layer containing elements of groups IB, IIIA and VIB may be formed by placing a substrate in a treatment chamber and performing atomic layer deposition of a group IB element and/or one or more group IIIA elements from separate sources onto a substrate to form a film. A group VIA element is then incorporated into the film and annealed to form the absorber layer. The absorber layer may be greater than about 25 nm thick. The substrate may be coiled into one or more coils in such a way that adjacent turns of the coils do not touch one another. The coiled substrate may be placed in a treatment chamber where substantially an entire surface of the one or more coiled substrates may be treated by an atomic layer deposition process. One or more group IB elements and/or one or more group IIIA elements may be deposited onto the substrate in a stoichiometrically controlled ratio by atomic layer deposition using one or more self limiting reactions.
摘要翻译：可以使用原子层沉积反应在基板上形成吸收层。包含IB，IIIA和VIB族元素的吸收层可以通过将基底放置在处理室中并且将IB族元素和/或一种或多种IIIA族元素从单独的源原子层沉积到基底上形成，以形成一个电影。然后将VIA族元素并入膜中并退火以形成吸收层。吸收层可以大于约25nm厚。衬底可以被卷绕成一个或多个线圈，使得线圈的相邻匝不彼此接触。卷绕的基板可以放置在处理室中，其中可以通过原子层沉积工艺来处理一个或多个卷绕的基板的基本上整个表面。可以通过使用一个或多个自限制反应的原子层沉积以化学计量控制的比例将一个或多个IB族元素和/或一个或多个IIIA族元素沉积到基底上。

10. 发明申请

US20050098205A1 Photovoltaic devices fabricated from insulating nanostructured template 失效
标题翻译：由绝缘纳米结构模板制造的光伏器件
公开(公告)号：US20050098205A1
公开(公告)日：2005-05-12
申请号：US10771250
申请日：2004-02-02
申请人： Martin Roscheisen , Brian Sager , Karl Pichler
发明人： Martin Roscheisen , Brian Sager , Karl Pichler
IPC分类号： H01L31/00 , H01L31/0248 , H01L31/0352 , H01L31/042 , H01L51/00 , H01L51/30
CPC分类号： H01L51/4233 , B82Y10/00 , H01L31/0352 , H01L31/03529 , H01L51/0035 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0047 , H01L51/0051 , H01L51/0052 , H01L51/0053 , H01L51/0078 , H01L51/0094 , H01L51/4213 , H01L51/422 , H01L51/4226 , H01L51/4253 , H01L51/447 , Y02E10/549
摘要： Photovoltaic devices, such as solar cells, and methods for their manufacture are disclosed. A device may be characterized by an architecture with an inorganic insulating nanostructured template having template elements between about 1 nm and about 500 nm in diameter with a elements density of between about 1012 elements/m2 and about 1016 elements/m2. A first charge-transfer material coats the walls of the template elements leaving behind additional space. A second charge-transfer material fills the additional space such that the first and second charge-transfer materials are volumetrically interdigitated. At least one charge transfer material has an absorbance of greater than about 103/cm. The first and second charge-transfer materials have complementary charge transfer properties with respect to each other. A lowest unoccupied molecular orbital (LUMO) or conduction band of the first charge-transfer material is offset from a LUMO or conduction band of the second charge-transfer material by greater than about 0.2 eV. An electrically conductive material may optionally be disposed between the nanostructured template and the first charge-transfer material.
摘要翻译：公开了太阳能电池等光伏器件及其制造方法。器件的特征在于具有无机绝缘纳米结构模板的结构，其具有直径在约1nm至约500nm之间的模板元件，元件密度为约10 12个元件/ m 2 和大约10个/ 16个元素/ m 2。第一电荷转移材料涂覆模板元件的壁，留下额外的空间。第二电荷转移材料填充附加空间，使得第一和第二电荷转移材料是体积相互交错的。至少一种电荷转移材料具有大于约10 3 / cm 3的吸光度。第一和第二电荷转移材料相对于彼此具有互补的电荷转移性质。第一电荷转移材料的最低未占分子轨道（LUMO）或导带从第二电荷转移材料的LUMO或导带偏移大于约0.2eV。导电材料可以任选地设置在纳米结构化模板和第一电荷转移材料之间。

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