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1. 发明申请

US20120293045A1 HIGH-POWER ULTRASONIC PROBE 审中-公开
标题翻译：高功率超声波探头
公开(公告)号：US20120293045A1
公开(公告)日：2012-11-22
申请号：US13574490
申请日：2011-04-22
申请人： Jeong Seok Kim , Sung Min Rhim , Ho Jung , Duck Hwan Oh
发明人： Jeong Seok Kim , Sung Min Rhim , Ho Jung , Duck Hwan Oh
IPC分类号： H01L41/04 , H01L41/22
CPC分类号： B06B1/0629 , A61B8/546 , H01L41/37 , Y10T29/42
摘要： Provided is an ultrasonic probe, which uses a composite piezo-electric element, which includes a piezo-electric wafer made of piezo-electric material and having a lattice shape, and a polymer filled between the lattices of the piezo-electric wafer. The ultrasonic probe has a high power and a wide band width simultaneously. In addition, since the ultrasonic probe further includes a heat exhaust unit for exhausting the heat generated at the ultrasonic probe to the outside, the temperature of an acoustic lens which contacts patients may be lowered.
摘要翻译：提供了一种超声波探头，其使用复合压电元件，其包括由压电材料制成并具有格子状的压电晶片，以及填充在压电晶片的晶格之间的聚合物。超声波探头同时具有高功率和宽带宽。此外，由于超声波探头还包括用于将在超声波探头处产生的热量排出到外部的散热单元，所以与患者接触的声学透镜的温度可能降低。

2. 发明授权

US07998761B2 Light emitting diode with ITO layer and method for fabricating the same 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US07998761B2
公开(公告)日：2011-08-16
申请号：US12088902
申请日：2006-12-08
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

3. 发明申请

US20100148190A1 LIGHT EMITTING DIODE WITH ITO LAYER AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US20100148190A1
公开(公告)日：2010-06-17
申请号：US12088902
申请日：2006-12-08
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

4. 发明授权

US08093583B2 Light emitting diode having barrier layer of superlattice structure 有权
标题翻译：具有超晶格结构的阻挡层的发光二极管
公开(公告)号：US08093583B2
公开(公告)日：2012-01-10
申请号：US12517314
申请日：2007-11-21
申请人： Sang Joon Lee , Duck Hwan Oh , Kyung Hae Kim , Chang Seok Han
发明人： Sang Joon Lee , Duck Hwan Oh , Kyung Hae Kim , Chang Seok Han
IPC分类号： H01L29/06 , H01L31/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.
摘要翻译：公开了一种具有超晶格结构的阻挡层的发光二极管（LED）。在具有GaN基N型化合物半导体层和GaN系P型化合物半导体层之间的有源区域的LED中，有源区域包括阱层和具有超晶格结构的势垒层。由于采用具有超晶格结构的阻挡层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

5. 发明授权

US07868337B2 Light emitting diode and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07868337B2
公开(公告)日：2011-01-11
申请号：US12136915
申请日：2008-06-11
申请人： Hwa Mok Kim , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
发明人： Hwa Mok Kim , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L33/00
CPC分类号： H01L33/325 , H01L33/06
摘要： Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.
摘要翻译：提供一种发光二极管（LED）及其制造方法。 LED包括n型半导体层，有源层和p型半导体层。活性层包括交替层压至少两次的阱层和阻挡层。阻挡层的厚度至少比阱层的厚度大两倍。

6. 发明申请

US20100059735A1 LIGHT EMITTING DIODE HAVING BARRIER LAYER OF SUPERLATTICE STRUCTURE 有权
标题翻译：具有超级结构障碍层的发光二极管
公开(公告)号：US20100059735A1
公开(公告)日：2010-03-11
申请号：US12517314
申请日：2007-11-21
申请人： Sang Joon Lee , Duck Hwan Oh , Kyung Hae Kim , Chang Seok Han
发明人： Sang Joon Lee , Duck Hwan Oh , Kyung Hae Kim , Chang Seok Han
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/06
摘要： A light emitting diode (LED) having a barrier layer with a superlattice structure is disclosed. In an LED having an active region between an GaN-based N-type compound semiconductor layer and a GaN-based P-type compound semiconductor layer, the active region comprises a well layer and a barrier layer with a superlattice structure. As the barrier layer with the superlattice structure is employed, it is possible to reduce occurrence of defects caused by lattice mismatch between the well layer and the barrier layer.
摘要翻译：公开了一种具有超晶格结构的阻挡层的发光二极管（LED）。在具有GaN基N型化合物半导体层和GaN系P型化合物半导体层之间的有源区域的LED中，有源区域包括阱层和具有超晶格结构的势垒层。由于采用具有超晶格结构的阻挡层，可以减少由阱层与阻挡层之间的晶格失配引起的缺陷的发生。

7. 发明申请

US20080265272A1 Light Emitting Device Having Zener Diode Therein And Method Of Fabricating The Same 有权
标题翻译：具有齐纳二极管的发光装置及其制造方法
公开(公告)号：US20080265272A1
公开(公告)日：2008-10-30
申请号：US12090053
申请日：2007-03-20
申请人： Duck Hwan Oh , Sang Joon Lee , Kyung Hae Kim
发明人： Duck Hwan Oh , Sang Joon Lee , Kyung Hae Kim
IPC分类号： H01L33/00
CPC分类号： H01L27/15 , H01L23/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , Y10S438/983 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.
摘要翻译：公开了一种其中具有齐纳二极管的发光器件和制造发光器件的方法。发光器件包括具有齐纳二极管区域和发光二极管区域的P型硅衬底。第一N型化合物半导体层与P型硅衬底的齐纳二极管区域接触，以与P型硅衬底一起显示齐纳二极管的特性。此外，第二N型化合物半导体层位于P型硅衬底的发光二极管区域上。第二N型化合物半导体层与第一N型化合物半导体层间隔开。同时，P型化合物半导体层位于第二N型化合物半导体层上，有源层插入在第二N型化合物半导体层和P型化合物半导体层之间。

8. 发明授权

US07772600B2 Light emitting device having zener diode therein and method of fabricating the same 有权
标题翻译：具有齐纳二极管的发光器件及其制造方法
公开(公告)号：US07772600B2
公开(公告)日：2010-08-10
申请号：US12090053
申请日：2007-03-20
申请人： Duck Hwan Oh , Sang Joon Lee , Kyung Hae Kim
发明人： Duck Hwan Oh , Sang Joon Lee , Kyung Hae Kim
IPC分类号： H01L27/15
CPC分类号： H01L27/15 , H01L23/62 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , Y10S438/983 , H01L2924/00014 , H01L2924/00
摘要： Disclosed are a light emitting device having a zener diode therein and a method of fabricating the light emitting device. The light emitting device comprises a P-type silicon substrate having a zener diode region and a light emitting diode region. A first N-type compound semiconductor layer is contacted to the zener diode region of the P-type silicon substrate to exhibit characteristics of a zener diode together with the P-type silicon substrate. Further, a second N-type compound semiconductor layer is positioned on the light emitting diode region of the P-type silicon substrate. The second N-type compound semiconductor layer is spaced apart from the first N-type compound semiconductor layer. Meanwhile, a P-type compound semiconductor layer is positioned on the second N-type compound semiconductor layer, and an active layer is interposed between the second N-type compound semiconductor layer and the P-type compound semiconductor layer.
摘要翻译：公开了一种其中具有齐纳二极管的发光器件和制造发光器件的方法。发光器件包括具有齐纳二极管区域和发光二极管区域的P型硅衬底。第一N型化合物半导体层与P型硅衬底的齐纳二极管区域接触，以与P型硅衬底一起显示齐纳二极管的特性。此外，第二N型化合物半导体层位于P型硅衬底的发光二极管区域上。第二N型化合物半导体层与第一N型化合物半导体层间隔开。同时，P型化合物半导体层位于第二N型化合物半导体层上，有源层插入在第二N型化合物半导体层和P型化合物半导体层之间。

9. 发明授权

US07700960B2 Light emitting diode with ITO layer and method for fabricating the same 有权
标题翻译：具有ITO层的发光二极管及其制造方法
公开(公告)号：US07700960B2
公开(公告)日：2010-04-20
申请号：US12605146
申请日：2009-10-23
申请人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
发明人： Dae Won Kim , Yeo Jin Yoon , Duck Hwan Oh , Jong Hwan Kim
IPC分类号： H01L33/00 , H01L27/15
CPC分类号： H01L33/42 , H01L27/153 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting diode with enhanced luminance and light emitting performance due to increase in efficiency of current diffusion into an ITO layer, and a method of fabricating the light emitting diode. According to the present invention, there is manufactured at least one light emitting cell including an N-type semiconductor layer, an active layer and a P-type semiconductor layer on a substrate. The method of the present invention comprises the steps of (a) forming at least one light emitting cell with an ITO layer formed on a top surface of the P-type semiconductor layer; (b) forming a contact groove for wiring connection in the ITO layer through dry etching; and (c) filling the contact groove with a contact connection portion made of a conductive material for the wiring connection.
摘要翻译：本发明涉及一种具有增强的亮度和发光性能的发光二极管，由于电流扩散到ITO层中的效率的提高，以及制造该发光二极管的方法。根据本发明，在衬底上制造至少一个包括N型半导体层，有源层和P型半导体层的发光单元。本发明的方法包括以下步骤：（a）在P型半导体层的顶表面上形成至少一个具有ITO层的发光单元; （b）通过干蚀刻形成用于在ITO层中布线连接的接触槽; 和（c）用接线连接用导电材料制成的接触连接部分填充接触槽。

10. 发明申请

US20080315244A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080315244A1
公开(公告)日：2008-12-25
申请号：US12136915
申请日：2008-06-11
申请人： Hwa Mok KIM , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
发明人： Hwa Mok KIM , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/325 , H01L33/06
摘要： Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.
摘要翻译：提供一种发光二极管（LED）及其制造方法。 LED包括n型半导体层，有源层和p型半导体层。活性层包括交替层压至少两次的阱层和阻挡层。阻挡层的厚度至少比阱层的厚度大两倍。

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