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1. 发明授权

US07868337B2 Light emitting diode and method for manufacturing the same 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US07868337B2
公开(公告)日：2011-01-11
申请号：US12136915
申请日：2008-06-11
申请人： Hwa Mok Kim , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
发明人： Hwa Mok Kim , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L33/00
CPC分类号： H01L33/325 , H01L33/06
摘要： Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.
摘要翻译：提供一种发光二极管（LED）及其制造方法。 LED包括n型半导体层，有源层和p型半导体层。活性层包括交替层压至少两次的阱层和阻挡层。阻挡层的厚度至少比阱层的厚度大两倍。

2. 发明申请

US20080315244A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：发光二极管及其制造方法
公开(公告)号：US20080315244A1
公开(公告)日：2008-12-25
申请号：US12136915
申请日：2008-06-11
申请人： Hwa Mok KIM , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
发明人： Hwa Mok KIM , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L33/00 , H01L21/20
CPC分类号： H01L33/325 , H01L33/06
摘要： Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.
摘要翻译：提供一种发光二极管（LED）及其制造方法。 LED包括n型半导体层，有源层和p型半导体层。活性层包括交替层压至少两次的阱层和阻挡层。阻挡层的厚度至少比阱层的厚度大两倍。

3. 发明授权

US07863599B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US07863599B2
公开(公告)日：2011-01-04
申请号：US12203762
申请日：2008-09-03
申请人： Hwa Mok Kim , Dae Won Kim , Dae Sung Kal
发明人： Hwa Mok Kim , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/465 , H01L33/105 , H01L33/42 , H01L33/46
摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.
摘要翻译：发光二极管（LED）具有n型半导体层，有源层，p型半导体层和透明电极层。 LED包括介于p型半导体层和透明电极层之间的隧道层，布置在透明电极层中的开口以使隧道层露出，布置在开口中的分布式布拉格反射器（DBR）和电极焊盘，布置在透明电极层上以覆盖开口中的DBR。

4. 发明授权

US07982207B2 Light emitting diode 有权
公开(公告)号：US07982207B2
公开(公告)日：2011-07-19
申请号：US12942635
申请日：2010-11-09
申请人： Hwa Mok Kim , Dae Won Kim , Dae Sung Kal
发明人： Hwa Mok Kim , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L29/06
CPC分类号： H01L33/465 , H01L33/105 , H01L33/42 , H01L33/46
摘要： A light emitting diode (LED) has an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a transparent electrode layer. The LED includes a tunnel layer interposed between the p-type semiconductor layer and the transparent electrode layer, an opening arranged in the transparent electrode layer so that the tunnel layer is exposed, a distributed Bragg reflector (DBR) arranged in the opening, and an electrode pad arranged on the transparent electrode layer to cover the DBR in the opening.

5. 发明申请

US20100051977A1 LIGHT EMITTING DEVICE HAVING ISOLATING INSULATIVE LAYER FOR ISOLATING LIGHT EMITTING CELLS FROM EACH OTHER AND METHOD OF FABRICATING THE SAME 有权
标题翻译：具有隔离绝热层的发光装置，用于从其它各种隔离发光单元及其制造方法
公开(公告)号：US20100051977A1
公开(公告)日：2010-03-04
申请号：US12514522
申请日：2006-12-18
申请人： Dae Won Kim , Dae Won Kim , Dae Sung Kal
发明人： Dae Won Kim , Dae Won Kim , Dae Sung Kal
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/50 , H01L33/62 , H01L2224/49107 , H01L2224/73265
摘要： Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell. Accordingly, there can be provided a light emitting device wherein particles are prevented from remaining between the plurality of light emitting cells to prevent current leakage between the light emitting cells. Further, there can be provided a light emitting device wherein the regions between light emitting cells are filled with an isolating insulative layer to facilitate formation of the wirings.
摘要翻译：公开了一种具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法。发光器件包括衬底和形成在衬底上的多个发光单元。每个发光单元包括下半导体层，位于下半导体层的一个区域上的上半导体层和插入在下半导体层和上半导体层之间的有源层。此外，隔离绝缘层填充在多个发光单元之间的区域中，以将发光单元彼此隔离。此外，布线将发光元件彼此电连接。每个布线连接一个发光单元的下半导体层和与一个发光单元相邻的另一个发光单元的上半导体层。因此，可以提供一种防止颗粒被保留在多个发光单元之间以防止发光单元之间的电流泄漏的发光装置。此外，可以提供一种发光器件，其中发光单元之间的区域填充有隔离绝缘层以促进布线的形成。

6. 发明授权

US08598775B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08598775B2
公开(公告)日：2013-12-03
申请号：US12514761
申请日：2007-12-07
申请人： Dae Won Kim , Do Hyung Kim , Dae Sung Kal , In Kyu Park
发明人： Dae Won Kim , Do Hyung Kim , Dae Sung Kal , In Kyu Park
IPC分类号： H01J1/62
CPC分类号： H01L25/0753 , F21K9/00 , H01L27/153 , H01L2224/48137 , H01L2224/49107
摘要： The disclosed light emitting device comprises at least one first light emitting element including at least one light emitting chip for emitting light having a wavelength of 400 to 500 nm and a phosphor; and at least one second light emitting element disposed adjacent to the first light emitting element to emit light having a wavelength of 560 to 880 nm.
摘要翻译：所公开的发光器件包括至少一个第一发光元件，其包括用于发射波长为400〜500nm的光的至少一个发光芯片和荧光体; 以及与第一发光元件相邻设置的至少一个第二发光元件，以发射波长为560至880nm的光。

7. 发明授权

US07772588B1 Light emitting device with improved internal quantum efficiency 有权
标题翻译：具有提高的内部量子效率的发光器件
公开(公告)号：US07772588B1
公开(公告)日：2010-08-10
申请号：US12616610
申请日：2009-11-11
申请人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
发明人： Chung Hoon Lee , Dae Won Kim , Dae Sung Kal , Ki Bum Nam
IPC分类号： H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01L33/06 , H01L33/32 , H01S5/1053 , H01S5/341 , H01S5/3412
摘要： A light emitting device can be used for light emitting diodes and laser diodes. The light emitting device includes a substrate, a first semiconductor layer on the substrate, a second semiconductor layer on the first semiconductor layer, and a multi-quantum well structure including at least one well layer and at least one barrier layer between the first and second semiconductor layers. A carrier trap portion is formed in at least one layer within the multi-quantum well structure. The at least one carrier trap portion is distributed at a higher density than a dislocation density of the layer including the carrier trap portion, and the carrier trap portion has a size of 1˜10 nm.
摘要翻译：发光器件可用于发光二极管和激光二极管。发光器件包括衬底，衬底上的第一半导体层，第一半导体层上的第二半导体层，以及多量子阱结构，其包括至少一个阱层和在第一和第二阱之间的至少一个势垒层半导体层。载流子捕获部分形成在多量子阱结构内的至少一层中。所述至少一个载流子捕获部以比包含所述载流子捕获部的层的位错密度高的密度分布，所述载流子捕获部的尺寸为1〜10nm。

8. 发明授权

US07709849B1 Light emitting diode having plurality of light emitting cells and method of fabricating the same 有权
公开(公告)号：US07709849B1
公开(公告)日：2010-05-04
申请号：US12620887
申请日：2009-11-18
申请人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
发明人： Dae Sung Kal , Dae Won Kim , Won Cheol Seo , Kyung Hee Ye , Joo Woong Lee
IPC分类号： H01L29/18
CPC分类号： H01L27/153 , H01L24/24 , H01L33/44 , H01L33/507 , H01L33/62 , H01L2224/24137 , H01L2924/12041 , H01L2924/00
摘要： The present invention discloses a light emitting diode. The light emitting diode includes a plurality of light emitting cells arranged on a substrate, each light emitting cell including a first semiconductor layer and a second semiconductor layer arranged on the first semiconductor layer; a first dielectric layer arranged on each light emitting cell and including a first opening to expose the first semiconductor layer and a second opening to expose the second semiconductor layer; a wire arranged on the first dielectric layer to couple two of the light emitting cells; and a second dielectric layer arranged on the first dielectric layer and the wire. The first dielectric layer and the second dielectric layer comprise the same material and the first dielectric layer is thicker than the second dielectric layer.

9. 发明授权

US08436389B2 Light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same 有权
标题翻译：具有多个非极性发光单元的发光器件及其制造方法
公开(公告)号：US08436389B2
公开(公告)日：2013-05-07
申请号：US13482851
申请日：2012-05-29
申请人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
发明人： Kwang Choong Kim , Won Cheol Seo , Dae Won Kim , Dae Sung Kal , Kyung Hee Ye
IPC分类号： H01L33/00
CPC分类号： H01L33/32 , H01L27/153 , H01L33/0079 , H01L33/18 , H01L33/20 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention relates to a light emitting device having a plurality of non-polar light emitting cells and a method of fabricating the same. Nitride semiconductor layers are disposed on a Gallium Nitride substrate having an upper surface. The upper surface is a non-polar or semi-polar crystal and forms an intersection angle with respect to a c-plane. The nitride semiconductor layers may be patterned to form light emitting cells separated from one another. When patterning the light emitting cells, the substrate may be partially removed in separation regions between the light emitting cells to form recess regions. The recess regions are filled with an insulating layer, and the substrate is at least partially removed by using the insulating layer.
摘要翻译：本发明涉及具有多个非极性发光单元的发光器件及其制造方法。氮化物半导体层设置在具有上表面的氮化镓衬底上。上表面是非极性或半极性的晶体，相对于c面形成交叉角。氮化物半导体层可以被图案化以形成彼此分离的发光单元。当图案化发光单元时，可以在发光单元之间的分离区域中部分地去除衬底，以形成凹陷区域。凹部区域填充有绝缘层，并且通过使用绝缘层至少部分地去除衬底。

10. 发明授权

US08173459B2 Light emitting device having isolating insulative layer for isolating light emitting cells from each other and method of fabricating the same 有权
标题翻译：具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法
公开(公告)号：US08173459B2
公开(公告)日：2012-05-08
申请号：US12970321
申请日：2010-12-16
申请人： Dae Won Kim , Dae Sung Kal
发明人： Dae Won Kim , Dae Sung Kal
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/50 , H01L33/62 , H01L2224/49107 , H01L2224/73265
摘要： Disclosed is a light emitting device having an isolating insulative layer for isolating light emitting cells from one another and a method of fabricating the same. The light emitting device comprises a substrate and a plurality of light emitting cells formed on the substrate. Each of the light emitting cells includes a lower semiconductor layer, an upper semiconductor layer positioned on one region of the lower semiconductor layer, and an active layer interposed between the lower and upper semiconductor layers. Furthermore, an isolating insulative layer is filled in regions between the plurality of light emitting cells to isolate the light emitting cells from one another. Further, wirings electrically connect the light emitting cells with one another. Each of the wirings connects the lower semiconductor layer of one light emitting cell and the upper semiconductor layer of another light emitting cell adjacent to the one light emitting cell.
摘要翻译：公开了一种具有用于将发光元件彼此隔离的隔离绝缘层的发光器件及其制造方法。发光器件包括衬底和形成在衬底上的多个发光单元。每个发光单元包括下半导体层，位于下半导体层的一个区域上的上半导体层和插入在下半导体层和上半导体层之间的有源层。此外，隔离绝缘层填充在多个发光单元之间的区域中，以将发光单元彼此隔离。此外，布线将发光元件彼此电连接。每个布线连接一个发光单元的下半导体层和与一个发光单元相邻的另一个发光单元的上半导体层。

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