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1. 发明授权

US09059015B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US09059015B2
公开(公告)日：2015-06-16
申请号：US13237778
申请日：2011-09-20
申请人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
发明人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L25/075 , H01L27/15 , H01L33/62 , H01L33/00 , H01L33/46
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

2. 发明授权

US08648369B2 Light emitting device and method of fabricating the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US08648369B2
公开(公告)日：2014-02-11
申请号：US13073794
申请日：2011-03-28
申请人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
发明人： Won Cheol Seo , Joon Hee Lee , Jong Kyun You , Chang Youn Kim , Jin Cheul Shin , Hwa Mok Kim , Jang Woo Lee , Yeo Jin Yoon , Jong Kyu Kim
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

3. 发明授权

US08470697B2 Method of forming p-type compound semiconductor layer 有权
标题翻译：形成p型化合物半导体层的方法
公开(公告)号：US08470697B2
公开(公告)日：2013-06-25
申请号：US12560891
申请日：2009-09-16
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/00
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

4. 发明申请

US20120132888A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20120132888A1
公开(公告)日：2012-05-31
申请号：US13304814
申请日：2011-11-28
申请人： Woo Chul KWAK , Soon Ho AN , Hwa Mok KIM , Eun Jin KIM , Jae Hoon SONG
发明人： Woo Chul KWAK , Soon Ho AN , Hwa Mok KIM , Eun Jin KIM , Jae Hoon SONG
IPC分类号： H01L33/04 , H01L29/06 , B82Y99/00
CPC分类号： H01L33/08 , B82Y20/00 , B82Y30/00 , H01L33/18 , H01L33/38 , H01L33/502 , H01L2933/0091
摘要： A light emitting device includes a metal backing layer, a reflective electrode layer disposed on the metal backing layer, and a plurality of nanorods disposed on the reflective electrode layer. Each nanorod includes a p-semiconductor layer, an active layer, and an n-semiconductor layer, which are sequentially stacked on the reflective electrode layer. The light emitting device further includes an anti-reflection electrode layer disposed on the nanorods, and quantum dots disposed between the nanorods. The method includes sequentially growing the n-semiconductor layer, the active layer, and the p-semiconductor layer on a substrate; forming the nanorods by etching the p-semiconductor layer using a mask pattern; sequentially forming the reflective electrode layer and the metal backing layer on the p-semiconductor layer and then removing the substrate; disposing quantum dots between the nanorods; and forming the anti-reflection electrode layer on the nanorods.
摘要翻译：发光器件包括金属背衬层，设置在金属背衬层上的反射电极层和设置在反射电极层上的多个纳米棒。每个纳米棒包括依次堆叠在反射电极层上的p半导体层，有源层和n半导体层。发光装置还包括设置在纳米棒上的抗反射电极层和设置在纳米棒之间的量子点。该方法包括在衬底上依次生长n半导体层，有源层和p半导体层; 通过使用掩模图案蚀刻p半导体层来形成纳米棒; 在p-半导体层上依次形成反射电极层和金属背衬层，然后去除衬底; 在纳米棒之间设置量子点; 并在纳米棒上形成抗反射电极层。

5. 发明授权

US07982210B2 Light emitting diode having modulation doped layer 有权
标题翻译：具有调制掺杂层的发光二极管
公开(公告)号：US07982210B2
公开(公告)日：2011-07-19
申请号：US12540123
申请日：2009-08-12
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L29/06
CPC分类号： H01L33/04 , H01L33/025 , H01L33/32
摘要： A light emitting diode (LED) having a modulation doped layer. The LED comprises an n-type contact layer, a p-type contact layer and an active region of a multiple quantum well structure having an InGaN well layer. The n-type contact layer comprises a first modulation doped layer and a second modulation doped layer, each having InGaN layers doped with a high concentration of n-type impurity and low concentration of n-type impurity InGaN layers alternately laminated. The InGaN layers of the first modulation doped layer have the same composition, and the InGaN layers of the second modulation doped layer have the same composition. The second modulation doped layer is interposed between the first modulation doped layer and the active region, and an n-electrode is in contact with the first modulation doped layer. Accordingly, an increase in process time is prevented and strains induced in a multiple quantum well structure are reduced.
摘要翻译：一种具有调制掺杂层的发光二极管（LED）。 LED包括n型接触层，p型接触层和具有InGaN阱层的多量子阱结构的有源区。 n型接触层包括第一调制掺杂层和第二调制掺杂层，每个具有掺杂有高浓度的n型杂质的InGaN层和低浓度的n型杂质InGaN层交替层叠。第一调制掺杂层的InGaN层具有相同的组成，第二调制掺杂层的InGaN层具有相同的组成。第二调制掺杂层介于第一调制掺杂层和有源区之间，并且n电极与第一调制掺杂层接触。因此，防止了处理时间的增加，并减少了在多量子阱结构中引起的应变。

6. 发明申请

US20110169040A1 LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20110169040A1
公开(公告)日：2011-07-14
申请号：US13073794
申请日：2011-03-28
申请人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
发明人： Won Cheol SEO , Joon Hee LEE , Jong Kyun YOU , Chang Youn KIM , Jin Cheul SHIN , Hwa Mok KIM , Jang Woo LEE , Yeo Jin YOON , Jong Kyu KIM
IPC分类号： H01L33/60
CPC分类号： H01L33/60 , H01L25/0753 , H01L27/156 , H01L33/007 , H01L33/0079 , H01L33/06 , H01L33/22 , H01L33/32 , H01L33/46 , H01L33/62 , H01L2924/0002 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
摘要： Disclosed are a light emitting device and a method of fabricating the same. The light emitting device comprises a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells comprises a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.
摘要翻译：公开了一种发光器件及其制造方法。发光器件包括衬底。多个发光单元设置在基板的顶部上以彼此间隔开。每个发光单元包括第一上半导体层，有源层和第二下半导体层。反射金属层位于基板和发光单元之间。防止反射金属层暴露于外部。

7. 发明申请

US20090163002A1 METHOD OF FORMING P-TYPE COMPOUND SEMICONDUCTOR LAYER 有权
标题翻译：形成P型复合半导体层的方法
公开(公告)号：US20090163002A1
公开(公告)日：2009-06-25
申请号：US12090305
申请日：2007-06-29
申请人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
发明人： Ki Bum Nam , Hwa Mok Kim , James S. Speck
IPC分类号： H01L21/22
CPC分类号： H01L33/007 , H01L21/0254 , H01L21/02579 , H01L21/0262
摘要： A method of forming a p-type compound semiconductor layer includes increasing a temperature of a substrate loaded into a reaction chamber to a first temperature. A source gas of a Group III element, a source gas of a p-type impurity, and a source gas of nitrogen containing hydrogen are supplied into the reaction chamber to grow the p-type compound semiconductor layer. Then, the supply of the source gas of the Group III element and the source gas of the p-type impurity is stopped and the temperature of the substrate is lowered to a second temperature. The supply of the source gas of nitrogen containing hydrogen is stopped and drawn out at the second temperature, and the temperature of the substrate is lowered to room temperature using a cooling gas. Accordingly, hydrogen is prevented from bonding to the p-type impurity in the p-type compound semiconductor layer.
摘要翻译：形成p型化合物半导体层的方法包括将装载到反应室中的基板的温度升高到第一温度。将III族元素的源气体，p型杂质的源气体和含氮气的源气体供给到反应室中以使p型化合物半导体层生长。然后，停止供给III族元素的源气体和p型杂质的源气体，并将基板的温度降低到第二温度。供给含氮氢气的源气体在第二温度下停止并排出，并且使用冷却气体将基板的温度降至室温。因此，防止氢与p型化合物半导体层中的p型杂质结合。

8. 发明申请

US20080185604A1 Lighting Emitting Device Employing Nanowire Phosphors 有权
标题翻译：采用纳米线荧光粉的照明发光装置
公开(公告)号：US20080185604A1
公开(公告)日：2008-08-07
申请号：US11995469
申请日：2006-06-05
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/502 , C09K11/54 , C09K11/565 , C09K11/574 , C09K11/584 , C09K11/595 , C09K11/623 , C09K11/642 , C09K11/7734 , C09K11/883 , Y10S977/762
摘要： Disclosed is a light emitting device employing nanowire phosphors. The light emitting device comprises a light emitting diode for emitting light having a first wavelength with a main peak in an ultraviolet, blue or green wavelength range; and nanowire phosphors for converting at least a portion of light having the first wavelength emitted from the light emitting diode into light with a second wavelength longer than the first wavelength. Accordingly, since the nanowire phosphors are employed, it is possible to reduce manufacturing costs of the light emitting device and to reduce light loss due to non-radiative recombination.
摘要翻译：公开了采用纳米线荧光体的发光器件。发光装置包括发光二极管，用于发射具有紫外线，蓝色或绿色波长范围内主峰的第一波长的光; 以及用于将具有从发光二极管发射的第一波长的至少一部分光转换成具有比第一波长长的第二波长的光的纳米线荧光体。因此，由于采用了纳米线型荧光体，因此能够降低发光元件的制造成本，并能够减少由于非辐射复合引起的光损失。

9. 发明申请

US20080157057A1 Nanostructure Having a Nitride-Based Quantum Well and Light Emitting Diode Employing the Same 有权
标题翻译：具有氮化物量子阱的纳米结构和使用该量子阱的发光二极管
公开(公告)号：US20080157057A1
公开(公告)日：2008-07-03
申请号：US11993949
申请日：2005-06-25
申请人： Hwa Mok Kim
发明人： Hwa Mok Kim
IPC分类号： H01L33/00 , H01L29/15
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/08 , H01L33/18 , H01L33/32
摘要： Disclosed are a nanostructure with an indium gallium nitride quantum well and a light emitting diode employing the same. The light emitting diode comprises a substrate, a transparent electrode and an array of nanostructures interposed between the substrate and the transparent electrode. Each of the nanostructures comprises a core nanorod, and a nano shell surrounding the core nanorod. The core nanorod is formed substantially perpendicularly to the substrate and includes a first nanorod of a first conductivity type, an (AlxInyGa1-x-y)N (where, 0≦x≦1, 0≦y≦1 and 0≦x+y≦1) quantum well, and a second nanorod of a second conductivity type, which are joined in a longitudinal direction. The nano shell is formed of a material with a bandgap greater than that of the quantum well, and surrounds at least the quantum well of the core nanorod. Meanwhile, the second nanorods are connected in common to the transparent electrode. Accordingly, with the nano shells, it is possible to provide a light emitting diode capable of improving external quantum efficiency by preventing non-radiative recombination on a surface of the (AlxInyGa1-x-y)N quantum well.
摘要翻译：公开了具有氮化镓镓量子阱的纳米结构和采用其的发光二极管。发光二极管包括衬底，透明电极和介于衬底和透明电极之间的纳米结构阵列。每个纳米结构包括芯纳米棒和围绕芯纳米棒的纳米壳。核心纳米棒基本上垂直于衬底形成，并且包括第一导电类型的第一纳米棒，（Al x Al x Ga y Ga 1-xy x） SUB（））N（其中，0 <= x <= 1,0,0 <= y <= 1和0 <= x + y <= 1）量子阱和第二导电类型的第二纳米棒，纵向。纳米壳由具有大于量子阱的带隙的材料形成，并且至少包围核心纳米棒的量子阱。同时，第二纳米棒共同连接到透明电极。因此，利用纳米壳，可以提供一种能够通过防止在（Al x In 2 O 3）的表面上的非辐射复合来提高外部量子效率的发光二极管， N 1 Ga x N N N N量子阱。

10. 发明申请

US20120202306A1 Method of fabricating semiconductor substrate and method of fabricating light emitting device 有权
公开(公告)号：US20120202306A1
公开(公告)日：2012-08-09
申请号：US13506295
申请日：2012-04-10
申请人： Chang Youn KIM , Shiro SAKAI , Hwa Mok KIM , Joon Hee LEE , Soo Young MOON , Kyoung Wan KIM
发明人： Chang Youn KIM , Shiro SAKAI , Hwa Mok KIM , Joon Hee LEE , Soo Young MOON , Kyoung Wan KIM
IPC分类号： H01L33/32
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/02488 , H01L21/02491 , H01L21/02502 , H01L21/0254 , H01L21/02639 , H01L33/005 , H01L33/0079
摘要： The present invention provides a method of fabricating a semiconductor substrate and a method of fabricating a light emitting device. The method includes forming a first semiconductor layer on a substrate, forming a metallic material layer on the first semiconductor layer, forming a second semiconductor layer on the first semiconductor layer and the metallic material layer, wherein a void is formed in a first portion of the first semiconductor layer under the metallic material layer during formation of the second semiconductor layer, and separating the substrate from the second semiconductor layer by etching at least a second portion of the first semiconductor layer using a chemical solution.

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