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1. 发明申请

US20050074979A1 Method for forming ferrocapacitors and FeRAM devices 失效
标题翻译：形成铁电体和FeRAM器件的方法
公开(公告)号：US20050074979A1
公开(公告)日：2005-04-07
申请号：US10678758
申请日：2003-10-02
申请人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
发明人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
IPC分类号： H01L21/02 , H01L21/311 , H01L21/8246 , H01L27/115 , H01L21/302 , H01L21/461
CPC分类号： H01L27/11502 , H01L21/31122 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3 layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.
摘要翻译：具有垂直结构的铁电体通过在绝缘体上沉积铁电层的工艺形成。在第一蚀刻阶段中，铁电材料被蚀刻以在其中形成开口，从而使绝缘层基本上完好无损。然后，将导电层沉积到形成在铁电层中的开口中，在开口的侧面形成电极。进行进一步蚀刻以在Al 2 O 3层中形成间隙，用于连接到其下方的导电元件。因此，在进行第二蚀刻步骤的时候，已经有电极覆盖在铁电材料的两侧，其间没有绝缘栅栏。

2. 发明授权

US07316980B2 Method for forming ferrocapacitors and FeRAM devices 失效
标题翻译：形成铁电体和FeRAM器件的方法
公开(公告)号：US07316980B2
公开(公告)日：2008-01-08
申请号：US10678758
申请日：2003-10-02
申请人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
发明人： Haoren Zhuang , Ulrich Egger , Rainer Bruchhaus , Karl Hornik , Jenny Lian , Stefan Gernhardt
IPC分类号： H01L21/302
CPC分类号： H01L27/11502 , H01L21/31122 , H01L27/11507 , H01L28/55 , H01L28/60
摘要： Ferrocapacitors having a vertical structure are formed by a process in which a ferroelectric layer is deposited over an insulator. In a first etching stage, the ferroelectric material is etched to form openings in it, leaving the insulating layer substantially intact. Then a conductive layer is deposited into the openings formed in the ferroelectric layer, forming electrodes on the sides of the openings. Further etching is performed to form gaps in the Al2O3 layer, for making connections to conductive elements beneath it. Thus, by the time the second etching step is performed; there are already electrodes overlying the sides of the ferroelectric material, without insulating fences in between.
摘要翻译：具有垂直结构的铁电体通过在绝缘体上沉积铁电体层的工艺形成。在第一蚀刻阶段中，铁电材料被蚀刻以在其中形成开口，从而使绝缘层基本上完好无损。然后，将导电层沉积到形成在铁电层中的开口中，在开口的侧面形成电极。执行进一步蚀刻以在Al 2 O 3层中形成间隙，以便连接到其下方的导电元件。因此，在进行第二蚀刻步骤的时候，已经有电极覆盖在铁电材料的两侧，其间没有绝缘栅栏。

3. 发明授权

US07071506B2 Device for inhibiting hydrogen damage in ferroelectric capacitor devices 失效
标题翻译：用于抑制铁电电容器件中的氢损伤的装置
公开(公告)号：US07071506B2
公开(公告)日：2006-07-04
申请号：US10655757
申请日：2003-09-05
申请人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
发明人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
IPC分类号： H01L29/76
CPC分类号： H01L28/57 , H01L27/0805 , H01L27/11507
摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.
摘要翻译：铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。一个或多个第二封装层可以形成在一个或多个储氢材料层上。

4. 发明授权

US06734057B2 Method of patterning capacitors and capacitors made thereby 失效
标题翻译：图案化电容器和电容器的方法
公开(公告)号：US06734057B2
公开(公告)日：2004-05-11
申请号：US10260229
申请日：2002-09-27
申请人： Jenny Lian , Haoren Zhuang , Ulrich Egger , Karl Hornik
发明人： Jenny Lian , Haoren Zhuang , Ulrich Egger , Karl Hornik
IPC分类号： H01L218242
CPC分类号： H01L28/55 , H01L21/31122
摘要： A method of forming a ferroelectric capacitor, in particular for use in a FeRAM or high-k DRAM application, and a capacitor made by the method. The method comprises forming a first layer which is patterned, for example by a reactive ion etching method. A ferroelectric material is then formed over the patterned first layer. The morphology of the ferroelectric material will be dependent upon the patterning of the first layer. The ferroeletric layer is then patterned, for example using a wet etching or a reactive ion etching method. The etching will depend upon the morphology of the ferroelectric layer. After etching the ferroelectric layer, a conductive layer is provided over the ferroelectric layer to form a first electrode of the capacitor. If the first layer is a conductive layer, this forms the second electrode. If the first layer is a non-conductive layer, the conductive layer is patterned to form both the first and second electrodes.
摘要翻译：形成铁电电容器的方法，特别是用于FeRAM或高k DRAM应用的方法，以及由该方法制成的电容器。该方法包括形成图案化的第一层，例如通过反应离子蚀刻方法。然后在图案化的第一层上形成铁电材料。铁电材料的形态将取决于第一层的图案化。然后将铁素体层图案化，例如使用湿蚀刻或反应离子蚀刻方法。蚀刻将取决于铁电层的形态。在对铁电体层进行蚀刻之后，在铁电层上设置导电层，形成电容器的第一电极。如果第一层是导电层，则形成第二电极。如果第一层是非导电层，则导电层被图案化以形成第一和第二电极。

5. 发明申请

US20050051819A1 Device and method for inhibiting hydrogen damage in ferroelectric capacitor devices 失效
标题翻译：用于抑制铁电电容器件中的氢损伤的装置和方法
公开(公告)号：US20050051819A1
公开(公告)日：2005-03-10
申请号：US10655757
申请日：2003-09-05
申请人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
发明人： Bum-Ki Moon , Karl Hornik , Haoren Zhuang , Ulrich Egger , Jenny Lian , Andreas Hilliger
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/08 , H01L29/76
CPC分类号： H01L28/57 , H01L27/0805 , H01L27/11507
摘要： A ferroelectric capacitor device comprises a substrate, a contact plug passing through the substrate, a first electrode formed on the substrate, the first electrode being electrically connected to said plug, a ferroelectric layer formed on the first electrode, a second electrode formed on the ferroelectric layer, one or more first encapsulation layers on the second electrode, the encapsulation layers extending over the device, and one or more hydrogen storage material layers on the encapsulation layers. One or more second encapsulation layers may be formed on the one or more hydrogen storage material layers.
摘要翻译：铁电电容器装置包括基板，穿过基板的接触插塞，形成在基板上的第一电极，第一电极电连接到所述插头，形成在第一电极上的铁电层，形成在铁电体上的第二电极层，在第二电极上的一个或多个第一封装层，在器件上延伸的封装层以及封装层上的一个或多个储氢材料层。一个或多个第二封装层可以形成在一个或多个储氢材料层上。

6. 发明授权

US07001781B2 Method for producing a ferroelectric capacitor that includes etching with hardmasks 失效
标题翻译：包括用硬掩模蚀刻的铁电电容器的制造方法
公开(公告)号：US07001781B2
公开(公告)日：2006-02-21
申请号：US10672306
申请日：2003-09-26
申请人： Jenny Lian , Ulrich Egger , Haoren Zhuang
发明人： Jenny Lian , Ulrich Egger , Haoren Zhuang
IPC分类号： H01L21/475
CPC分类号： H01L28/60 , H01L21/31122 , H01L21/32136 , H01L21/32139 , H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A method for fabricating a device and a device, such as a ferroelectric capacitor, having a substrate, a contact plug through the substrate, a first barrier layer on the substrate, a first electrode on the first barrier layer, a dielectric layer on the first electrode, and a second electrode on the dielectric layer, comprises etching the second electrode and the dielectric layer of the device using a first hardmask, to shape the second electrode and the dielectric layer. The first hardmask is then removed and one or more encapsulating layers are applied to the second electrode and the dielectric layer. A further hardmask is applied to the one or more encapsulating layers. The first electrode is then etched according to the second hardmask down to the first barrier layer and the second hardmask is then removed from the one or more encapsulating layers.
摘要翻译：一种用于制造器件和器件的方法，例如铁电电容器，具有衬底，通过衬底的接触插塞，衬底上的第一阻挡层，第一阻挡层上的第一电极，第一阻挡层上的电介质层电极和第二电极，包括使用第一硬掩模蚀刻该器件的第二电极和介电层，以使第二电极和电介质层成型。然后去除第一硬掩模，并且将一个或多个封装层施加到第二电极和电介质层。另外的硬掩模应用于一个或多个封装层。然后根据第二硬掩模将第一电极蚀刻到第一阻挡层，然后从一个或多个封装层移除第二硬掩模。

7. 发明申请

US20050084984A1 Method for forming ferrocapacitors and FeRAM devices 审中-公开
标题翻译：形成铁电体和FeRAM器件的方法
公开(公告)号：US20050084984A1
公开(公告)日：2005-04-21
申请号：US10678952
申请日：2003-10-02
申请人： Haoren Zhuang , Rainer Bruchhaus , Ulrich Egger , Jenny Lian , Nicolas Nagel
发明人： Haoren Zhuang , Rainer Bruchhaus , Ulrich Egger , Jenny Lian , Nicolas Nagel
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A vertical capacitor of an FeRAM device is formed by depositing conductive material and etching it to form electrodes, which are located over openings in an insulating layer so that they are electrically connected to lower levels of the structure. A layer of ferroelectric material is formed on the sides of the electrodes, and etched to a desired, uniform thickness. Conductive material is deposited over the ferroelectric material to form a uniform surface onto which another insulating layer can be deposited. Since this process does not include etching of an insulating layer at a time between the formation of the electrodes and the deposition of the ferroelectric material, no fences of insulating material are formed between them. The geometry can be accurately controlled, to give uniform electric fields and reliable operating parameters.
摘要翻译： FeRAM器件的垂直电容器通过沉积导电材料并进行蚀刻而形成，以形成位于绝缘层中的开口上方的电极，使得它们电连接到结构的较低层。在电极的侧面形成铁电材料层，并且蚀刻到期望的均匀厚度。导电材料沉积在铁电材料上以形成可沉积另一绝缘层的均匀表面。由于该方法不包括在形成电极之间的时间刻蚀绝缘层和铁电体的沉积，所以在它们之间不形成绝缘材料栅栏。几何形状可以精确控制，给出均匀的电场和可靠的工作参数。

8. 发明授权

US06785119B2 Ferroelectric capacitor and process for its manufacture 失效
标题翻译：铁电电容器及其制造工艺
公开(公告)号：US06785119B2
公开(公告)日：2004-08-31
申请号：US10307230
申请日：2002-11-29
申请人： Ulrich Egger , Haoren Zhuang , Karl Hornik
发明人： Ulrich Egger , Haoren Zhuang , Karl Hornik
IPC分类号： H01G4228
CPC分类号： H01L28/55 , H01L21/02178 , H01L21/02266 , H01L21/31116 , H01L21/3162
摘要： Forming a capacitor, by (a) forming a matrix of ferroelectric capacitor elements on a substrate, (b) forming a CAP layer over the ferroelectric capacitor elements, and (c) etching the CAP layer to a more uniform thickness. A capacitor that has a substrate layer, a matrix of ferroelectric capacitor elements including a first electrode layer substantially fixed relative to the substrate, a second electrode layer, and a ferroelectric layer sandwiched between the first and second electrode layers is disclosed. The capacitor has a shoulder layer extending from the substrate to the matrix, and a CAP layer etched to have substantially constant thickness covering sides of the matrix extending beyond the substrate.
摘要翻译：通过（a）在基板上形成铁电电容器元件的矩阵，（b）在铁电电容器元件上形成CAP层，形成电容器，（c）将CAP层蚀刻到更均匀的厚度。公开了具有基板层的电容器，包括相对于基板大致固定的第一电极层的铁电电容器元件的矩阵，第二电极层和夹在第一和第二电极层之间的铁电层。电容器具有从基板延伸到基体的肩层，并且CAP层被蚀刻以具有基本上恒定的厚度，覆盖延伸超过基底的基体的侧面。

9. 发明申请

US20050067649A1 Method for producing a ferroelectric capacitor and a ferroelectric capacitor device 失效
标题翻译：铁电电容器和铁电电容器器件的制造方法
公开(公告)号：US20050067649A1
公开(公告)日：2005-03-31
申请号：US10672306
申请日：2003-09-26
申请人： Jenny Lian , Ulrich Egger , Haoren Zhuang
发明人： Jenny Lian , Ulrich Egger , Haoren Zhuang
IPC分类号： H01L21/02 , H01L21/311 , H01L21/3213 , H01L21/8246 , H01L27/115 , H01L21/00 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L31/119
CPC分类号： H01L28/60 , H01L21/31122 , H01L21/32136 , H01L21/32139 , H01L27/11502 , H01L27/11507 , H01L28/57 , H01L28/75
摘要： A method for fabricating a device and a device, such as a ferroelectric capacitor, having a substrate, a contact plug through the substrate, a first barrier layer on the substrate, a first electrode on the first barrier layer, a dielectric layer on the first electrode, and a second electrode on the dielectric layer, comprises etching the second electrode and the dielectric layer of the device using a first hardmask, to shape the second electrode and the dielectric layer. The first hardmask is then removed and one or more encapsulating layers are applied to the second electrode and the dielectric layer. A further hardmask is applied to the one or more encapsulating layers. The first electrode is then etched according to the second hardmask down to the first barrier layer and the second hardmask is then removed from the one or more encapsulating layers.
摘要翻译：一种制造器件和器件的方法，例如铁电电容器，具有衬底，通过衬底的接触插塞，衬底上的第一阻挡层，第一阻挡层上的第一电极，第一阻挡层上的电介质层电极和第二电极，包括使用第一硬掩模蚀刻该器件的第二电极和介电层，以使第二电极和电介质层成型。然后去除第一硬掩模，并且将一个或多个封装层施加到第二电极和电介质层。另外的硬掩模应用于一个或多个封装层。然后根据第二硬掩模将第一电极蚀刻到第一阻挡层，然后从一个或多个封装层移除第二硬掩模。

10. 发明授权

US06897501B2 Avoiding shorting in capacitors 有权
标题翻译：避免电容器短路
公开(公告)号：US06897501B2
公开(公告)日：2005-05-24
申请号：US10248897
申请日：2003-02-28
申请人： Haoren Zhuang , Ulrich Egger , Jingyu Lian , Gerhard Beitel , Karl Hornik
发明人： Haoren Zhuang , Ulrich Egger , Jingyu Lian , Gerhard Beitel , Karl Hornik
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/08 , H01L27/115 , H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/0805 , H01L27/11507 , H01L28/55
摘要： A capacitor structure having a capacitor with a top electrode, a bottom electrode, and a capacitor dielectric layer between the top and bottom electrodes is disclosed. The capacitor includes upper and lower portions. The demarcation between the upper and lower portion is located between top and bottom surfaces of the capacitor dielectric layer. A dielectric layer is provided on the sidewalls of the upper portion of the capacitor to prevent shorting between the electrodes that can be caused by a conductive fence formed during processing.
摘要翻译：公开了一种电容器结构，其具有在顶部电极和底部电极之间具有顶部电极，底部电极和电容器电介质层的电容器。电容器包括上部和下部。上部和下部之间的分界位于电容器介电层的顶表面和底表面之间。在电容器的上部的侧壁上设置有电介质层，以防止在加工过程中形成的导电栅栏引起的电极之间的短路。

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