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1. 发明授权

US08133362B2 Physical vapor deposition with multi-point clamp 有权
标题翻译：物理气相沉积与多点夹
公开(公告)号：US08133362B2
公开(公告)日：2012-03-13
申请号：US12714409
申请日：2010-02-26
申请人： Jeffrey Birkmeyer , Youming Li , Steve Deming , Mats G. Ottosson
发明人： Jeffrey Birkmeyer , Youming Li , Steve Deming , Mats G. Ottosson
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/50 , H01J37/32495 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01J37/34 , H01J37/3405
摘要： A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，真空室内部的阴极，其中阴极被配置为包括溅射靶，配置为向阴极施加电力的射频电源，内部并电连接的阳极到真空室的侧壁，卡盘位于真空室的侧壁内并与真空室的侧壁电隔离，卡盘被配置为支撑基板，夹具被配置为将基板保持在卡盘上，其中夹具是导电的，以及附接到所述夹具的多个导电电极，每个电极构造成当与所述基板接触时被压缩。

2. 发明申请

US20110209984A1 Physical Vapor Deposition With Multi-Point Clamp 有权
标题翻译：物理气相沉积与多点夹
公开(公告)号：US20110209984A1
公开(公告)日：2011-09-01
申请号：US12714409
申请日：2010-02-26
申请人： Jeffrey Birkmeyer , Youming Li , Steve Deming , Mats G. Ottosson
发明人： Jeffrey Birkmeyer , Youming Li , Steve Deming , Mats G. Ottosson
IPC分类号： C23C14/34
CPC分类号： C23C14/3407 , C23C14/50 , H01J37/32495 , H01J37/32697 , H01J37/32715 , H01J37/32724 , H01J37/34 , H01J37/3405
摘要： A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, a clamp configured to hold the substrate to the chuck, wherein the clamp is electrically conductive, and a plurality of conductive electrodes attached to the clamp, each electrode configured to compress when contacted by the substrate.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，真空室内部的阴极，其中阴极被配置为包括溅射靶，配置为向阴极施加电力的射频电源，内部并电连接的阳极到真空室的侧壁，卡盘位于真空室的侧壁内并与真空室的侧壁电隔离，卡盘被配置为支撑基板，夹具被配置为将基板保持在卡盘上，其中夹具是导电的，以及附接到所述夹具的多个导电电极，每个电极构造成当与所述基板接触时被压缩。

3. 发明申请

US20100147681A1 CHAMBER SHIELD FOR VACUUM PHYSICAL VAPOR DEPOSITION 有权
标题翻译：真空真空蒸发沉积室
公开(公告)号：US20100147681A1
公开(公告)日：2010-06-17
申请号：US12334279
申请日：2008-12-12
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/32623 , H01J37/34
摘要： A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，阴极，射频电源，基板支撑件和阳极以及屏蔽件。阴极在真空室内，并包括溅射靶。射频电源被配置为向阴极施加电力。衬底支撑件与真空室的侧壁在内部并与之电隔离。阳极在真空室的侧壁内部并电连接。屏蔽体内部并电连接到真空室的侧壁，并且包括环形体和从环形体延伸的多个同心的环形突起。

4. 发明授权

US09085152B2 Etching piezoelectric material 有权
标题翻译：蚀刻压电材料
公开(公告)号：US09085152B2
公开(公告)日：2015-07-21
申请号：US12991901
申请日：2009-05-12
申请人： Jeffrey Birkmeyer , Youming Li
发明人： Jeffrey Birkmeyer , Youming Li
IPC分类号： C23F1/12 , B41J2/16 , H01L21/311 , H01L41/332
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1646 , H01L21/31138 , H01L41/332 , Y10T428/24802 , Y10T428/24917
摘要： Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.
摘要翻译：压电材料通过等离子体蚀刻成形，以形成具有高纵横比和所需几何形状的深度特征。

5. 发明申请

US20130284589A1 RADIO FREQUENCY TUNED SUBSTRATE BIASED PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF OPERATION 审中-公开
标题翻译：无线电频率调谐基板偏置物理蒸气沉积装置和操作方法
公开(公告)号：US20130284589A1
公开(公告)日：2013-10-31
申请号：US13460332
申请日：2012-04-30
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/35 , H01J37/32183 , H01J37/32651 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

6. 发明申请

US20100147680A1 SHAPED ANODE AND ANODE-SHIELD CONNECTION FOR VACUUM PHYSICAL VAPOR DEPOSITION 有权
标题翻译：用于真空真空蒸发沉积的形状阳极和阳极屏蔽连接
公开(公告)号：US20100147680A1
公开(公告)日：2010-06-17
申请号：US12334253
申请日：2008-12-12
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/35
CPC分类号： C23C14/08 , C23C14/35 , H01J37/3408 , H01J37/3438 , H01J37/3447
摘要： A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，阴极，射频电源，基板支撑件，屏蔽件和阳极。阴极在真空室内，阴极包括溅射靶。射频电源被配置为向阴极施加电力。衬底支撑件与真空室的侧壁在内部并与之电隔离。屏蔽层内部并电连接到真空室的侧壁。阳极在真空室的侧壁内部并电连接。阳极包括环形体和从环形体向内突出的环形凸缘，并且环形凸缘被定位成限定靶下方的体积以产生等离子体。

7. 发明授权

US09181619B2 Physical vapor deposition with heat diffuser 有权
标题翻译：物理气相沉积与散热器
公开(公告)号：US09181619B2
公开(公告)日：2015-11-10
申请号：US12714422
申请日：2010-02-26
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/34 , C23C14/50 , C23C14/54 , H01J37/34 , H01J37/32
CPC分类号： C23C14/50 , C23C14/3407 , C23C14/541 , H01J37/32467 , H01J37/32522 , H01J37/32715 , H01J37/32724 , H01J37/34 , H01J37/347 , H01J37/3488
摘要： A physical vapor deposition apparatus includes a vacuum chamber having side walls, a cathode inside the vacuum chamber, wherein the cathode is configured to include a sputtering target, a radio frequency power supply configured to apply power to the cathode, an anode inside and electrically connected to the side walls of the vacuum chamber, and a chuck inside and electrically isolated from the side walls of the vacuum chamber, the chuck configured to support a substrate, and a heater to heat the substrate supported on the chuck. The chuck includes a body and a graphite heat diffuser supported on the body and configured to contact the substrate.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，真空室内部的阴极，其中阴极被配置为包括溅射靶，配置为向阴极施加电力的射频电源，内部并电连接的阳极到真空室的侧壁，以及夹在内部并与真空室的侧壁电绝缘的卡盘，构造成支撑基板的卡盘和加热器，以加热支撑在卡盘上的基板。卡盘包括主体和支撑在主体上并构造成接触基板的石墨散热器。

8. 发明授权

US08557088B2 Physical vapor deposition with phase shift 有权
标题翻译：具有相移的物理气相沉积
公开(公告)号：US08557088B2
公开(公告)日：2013-10-15
申请号：US12389241
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , H01J37/3408 , H01J37/3438 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。

9. 发明申请

US20100206713A1 PZT Depositing Using Vapor Deposition 审中-公开
标题翻译： PZT沉积使用气相沉积
公开(公告)号：US20100206713A1
公开(公告)日：2010-08-19
申请号：US12389078
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/34
CPC分类号： C23C14/088 , C23C14/3471 , H01J37/3408 , H01J37/3438 , H01J37/3447
摘要： Methods and apparatus for sputtering a target material, such as PZT, can include positioning a conductive grid between a target and a substrate. The target, the substrate, and a sputtering gas can be contained in a chamber, and power of a first RF source can be applied so as to maintain a plasma in the chamber. Power of a second RF source can be applied to the conductive grid. Target material can be sputtered from the target onto the substrate. Positioning of the conductive grid and application of power by the second RF source can affect properties of sputter deposition of the target material. For example, the second RF source and the conductive grid can be part of a capacitive circuit configured such that voltage change in the capacitive circuit affects properties of the sputtering gas and, in turn, properties of a sputter deposition process.
摘要翻译：用于溅射目标材料（例如PZT）的方法和装置可以包括将导电栅格定位在靶和衬底之间。靶，衬底和溅射气体可以包含在室中，并且可以施加第一RF源的功率，以便在腔室中保持等离子体。第二RF源的功率可以应用于导电栅格。目标材料可以从靶材溅射到基材上。导电栅格的定位和由第二RF源施加的功率可以影响目标材料的溅射沉积的特性。例如，第二RF源和导电栅可以是电容电路的一部分，其被配置为使得电容电路中的电压变化影响溅射气体的性质，反过来又影响溅射沉积工艺的性质。

10. 发明申请

US20100141097A1 THIN FILM PIEZOELECTRIC ACTUATORS 有权
标题翻译：薄膜压电致动器
公开(公告)号：US20100141097A1
公开(公告)日：2010-06-10
申请号：US12603800
申请日：2009-10-22
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： H01L41/04 , B05D5/12 , C23C14/34 , H01L41/22
CPC分类号： H01L41/316 , H01L41/0815 , H01L41/331
摘要： A MEMS device with a thin piezoelectric actuator is described. A substrate with a first surface has a crystalline orientation prompting layer on the first surface. A piezoelectric portion contacts the crystalline orientation prompting layer and has an orientation corresponding to the orientation of the crystalline orientation prompting layer. A dielectric material surrounds the piezoelectric portion. The dielectric material is formed of an inorganic material.
摘要翻译：描述了具有薄压电致动器的MEMS器件。具有第一表面的基底在第一表面上具有结晶取向促进层。压电部分接触晶体取向促进层并且具有与晶体取向促进层的取向相对应的取向。电介质材料围绕压电部分。介电材料由无机材料形成。

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