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1. 发明授权

US08366259B2 Film formation method, film formation device, piezoelectric film, piezoelectric device, liquid discharge device and piezoelectric ultrasonic transducer 有权
标题翻译：成膜方法，成膜装置，压电膜，压电装置，液体排出装置和压电超声换能器
公开(公告)号：US08366259B2
公开(公告)日：2013-02-05
申请号：US13443042
申请日：2012-04-10
申请人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
发明人： Takamichi Fujii , Takayuki Naono , Takami Arakawa
IPC分类号： B41J2/17
CPC分类号： B41J2/155 , B41J2/14233 , C23C14/0036 , C23C14/088 , C23C14/3407 , C23C14/3471 , H01J37/32935 , H01J37/3299 , H01J37/34 , H01J37/3444 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/316 , Y10T29/42 , Y10T428/31504
摘要： When a film containing constituent elements of a target is formed on a substrate through a vapor deposition process using plasma with placing the substrate and the target to face each other, a potential in a spatial range of at least 10 mm extending laterally from the outer circumference of the substrate is controlled to be equal to a potential on the substrate, and/or the substrate is surrounded with a wall surface having a potential controlled to be equal to the potential on the substrate.
摘要翻译：当通过使用等离子体的等离子体通过使基板和目标物彼此面对而在基板上形成含有靶的构成元素的膜时，从外周侧横向延伸的至少10mm的空间范围的电位被控制为等于衬底上的电位，并且/或者衬底被具有被控制为等于衬底上的电位的电位的壁表面包围。

2. 发明申请

US20120250127A1 MIRROR DRIVING DEVICE AND MIRROR DRIVING METHOD 有权
标题翻译：镜子驱动装置和镜子驱动方法
公开(公告)号：US20120250127A1
公开(公告)日：2012-10-04
申请号：US13433338
申请日：2012-03-29
申请人： Takayuki NAONO
发明人： Takayuki NAONO
IPC分类号： G02B26/10
CPC分类号： G02B26/0841
摘要： A mirror driving device of an aspect can include: a mirror part; a pair of inner actuator parts; a pair of outer actuator parts; fixing and supporting parts; an inner actuator driving voltage supply part; and an outer actuator driving voltage supply part. A driving voltage with a frequency inducing oscillation of the mirror part in a rotating direction of the mirror part associated with resonance drive of the corresponding actuator parts can be supplied from one driving voltage supply part of the inner actuator driving voltage supply part and the outer actuator driving voltage supply part to the inner actuator parts or the outer actuator parts corresponding to the one driving voltage supply part. Simultaneously with the resonance drive, a driving voltage for inclining the mirror part without exciting resonance drive can be supplied from the other driving voltage supply part to corresponding actuator parts.
摘要翻译：一方面的镜驱动装置可以包括：镜部; 一对内部致动器部件; 一对外部致动器部件; 固定和支撑部件; 内部致动器驱动电压供给部; 以及外部致动器驱动电压供给部。可以从内部致动器驱动电压供应部分和外部致动器的一个驱动电压供应部分提供具有与相应致动器部件的共振驱动相关联的反射镜部分的旋转方向上的反射镜部分的频率感应振荡的驱动电压驱动电压供应部分到与所述一个驱动电压供应部分相对应的内部致动器部件或外部致动器部件。与共振驱动同时，可以从另一个驱动电压供应部分向相应的致动器部件提供用于使没有激励谐振驱动的反射镜部分倾斜的驱动电压。

3. 发明申请

US20120102696A1 PIEZOELECTRIC DEVICE, PROCESS FOR PRODUCING THE SAME, AND LIQUID DISCHARGE DEVICE 有权
标题翻译：压电器件，其制造方法和液体放电器件
公开(公告)号：US20120102696A1
公开(公告)日：2012-05-03
申请号：US13347333
申请日：2012-01-10
申请人： Takamichi FUJII , Takayuki NAONO , Yoshikazu NISHINUMA
发明人： Takamichi FUJII , Takayuki NAONO , Yoshikazu NISHINUMA
IPC分类号： H01L41/22
CPC分类号： B41J2/14233 , B41J2202/03 , H01L41/0475 , H01L41/0477 , H01L41/0478 , H01L41/0973 , H01L41/1876 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device includes a substrate; and a laminated film formed above the substrate. The laminated film includes a lower electrode layer, a piezoelectric layer, and an upper electrode layer formed in this order, and the lower electrode layer is a metal electrode layer containing as one or more main components one or more nonnoble metals and/or one or more nonnoble alloys. Preferably, the one or more main components are one or more of the metals Cr, W, Ti, Al, Fe, Mo, In, Sn, Ni, Cu, Co, and Ta, and alloys of the metals.
摘要翻译：压电装置包括基板; 以及形成在基板上方的层叠膜。层叠膜包括依次形成的下电极层，压电层和上电极层，下电极层是含有作为一种或多种主要成分的一种或多种非金属和/或一种或多种非金属的金属电极层，更多的nonnoble合金。优选地，一种或多种主要组分是金属Cr，W，Ti，Al，Fe，Mo，In，Sn，Ni，Cu，Co和Ta中的一种或多种，以及金属的合金。

4. 发明申请

US20120038713A1 PIEZOELECTRIC FILM AND METHOD OF MANUFACTURING SAME, PIEZOELECTRIC DEVICE AND LIQUID EJECTION APPARATUS 有权
标题翻译：压电薄膜及其制造方法，压电元件和液体喷射装置
公开(公告)号：US20120038713A1
公开(公告)日：2012-02-16
申请号：US13206805
申请日：2011-08-10
申请人： Takayuki NAONO
发明人： Takayuki NAONO
IPC分类号： B41J2/045 , C23C14/08 , B05D5/12 , H01L41/053 , H01L41/187
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1628 , B41J2/1646 , B41J2202/03 , C23C14/08 , C23C14/345 , C23C14/54 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： A piezoelectric film is constituted of a perovskite oxide represented as: Pb1+δ(ZrxTiy)1-a(MgbNb1-b)aOz, where δ and z are values within ranges where a perovskite structure is obtained and δ=0 and z=3 are standard, Pb is replaceable with another A site element in an amount of a range where the perovskite structure is obtained, b is a value in a range of 0.090≦b≦0.25, and a Nb ratio at a B site satisfies 0.13≦a×(1−b).
摘要翻译：压电体膜由以Pb表示的钙钛矿氧化物构成：Pb1 +δ（ZrxTiy）1-a（MgbNb1-b）aOz，其中δ和z为得到钙钛矿结构，δ= 0且z = 3的范围内的值是标准的，Pb可以与获得钙钛矿结构的范围内的另一个A位元素替代，b是0.090＆lt; lEE; b＆nlE; 0.25的范围，B位的Nb比满足0.13＆nlE ; a×（1-b）。

5. 发明授权

US08075105B2 Perovskite-type oxide film, piezoelectric thin-film device and liquid ejecting device using perovskite-type oxide film, as well as production process and evaluation method for perovskite-type oxide film 有权
标题翻译：钙钛矿型氧化膜，压电薄膜元件和使用钙钛矿型氧化物膜的液体喷射装置以及钙钛矿型氧化膜的制造方法及评价方法
公开(公告)号：US08075105B2
公开(公告)日：2011-12-13
申请号：US12560131
申请日：2009-09-15
申请人： Yoshikazu Hishinuma , Takamichi Fujii , Takayuki Naono , Yuuichi Okamoto , Ryosuke Ozawa
发明人： Yoshikazu Hishinuma , Takamichi Fujii , Takayuki Naono , Yuuichi Okamoto , Ryosuke Ozawa
IPC分类号： B41J2/045 , C04B35/495 , C04B35/00 , H01L41/18 , H01L41/187
CPC分类号： B41J2/14233 , B41J2202/03 , C23C14/025 , C23C14/083 , C23C14/5806 , G01N21/65 , H01L41/1876 , H01L41/29 , H01L41/316
摘要： Provided is a perovskite-type oxide film having a perovskite-type crystal structure and containing lead as a chief component, which, when subjected to Raman microspectroscopy at a plurality of points on a surface thereof so as to measure Raman spectra upon application of an electric field of 100 kV/cm and upon application of no electric field, has a mean of absolute values of peak shift amounts that is 2.2 cm−1 or less, with the peak shift amounts being found between Raman spectra in a range of 500 to 650 cm−1 measured upon application of an electric field of 100 kV/cm and Raman spectra in the range of 500 to 650 cm−1 measured upon application of no electric field. A production process and an evaluation method for such a film as well as a device using such a film are also provided.
摘要翻译：本发明提供一种具有钙钛矿型晶体结构并含有铅作为主要成分的钙钛矿型氧化物膜，其在表面上的多个点进行拉曼显微光谱检测，以便在施加电流时测量拉曼光谱 100kV / cm的电场，施加无电场时，具有2.2cm -1以下的峰值偏移量的绝对值的平均值，峰值偏移量在500〜650nm范围内的拉曼光谱之间发现在施加100kV / cm的电场时测量的cm -1，并且在施加无电场时测量的在500至650cm -1范围内的拉曼光谱。还提供了这种膜的制造方法和评价方法以及使用这种膜的装置。

6. 发明申请

US20110121096A1 PIEZOELECTRIC DEVICE, PIEZOELECTRIC DEVICE MANUFACTURING METHOD, AND LIQUID DISCHARGE APPARATUS 有权
标题翻译：压电器件，压电器件制造方法和液体放电设备
公开(公告)号：US20110121096A1
公开(公告)日：2011-05-26
申请号：US13000408
申请日：2009-07-27
申请人： Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
发明人： Yasukazu Nihei , Takamichi Fujii , Yuuichi Okamoto , Takami Arakawa , Takayuki Naono
IPC分类号： B05B1/08 , H01L41/22 , H01L41/18 , H01L41/04
CPC分类号： B41J2/161 , B41J2/1646 , C04B35/49 , H01L41/0805 , H01L41/0973 , H01L41/1875 , H01L41/316 , Y10T29/42
摘要： A piezoelectric device, including the following on a substrate in the order listed below: a lower electrode, a piezoelectric film which contains a Pb containing perovskite oxide represented by a general expression (P) below, and an upper electrode, in which the piezoelectric film has a layer of pyrochlore oxide on the surface facing the lower electrode, and the average layer thickness of the pyrochlore oxide layer is not greater than 20 nm. AaBbO3 (P) where, A: at least one type of A-site element containing Pb as a major component, B: at least one type of B-site element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and O: an oxygen element.
摘要翻译：一种压电装置，其以下列顺序包括在基板上：下电极，包含由下面的一般表达式（P）表示的含Pb的钙钛矿氧化物的压电膜和上电极，其中压电膜在面向下电极的表面上具有一层烧绿石氧化物，烧绿石氧化物层的平均层厚不大于20nm。 AaBbO3（P）其中A：至少一种含有Pb作为主要成分的A位元素，B：选自Ti，Zr，V，Nb，Ta中的至少一种B位元素，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd，Fe和Ni，O：氧元素。

7. 发明申请

US20100206718A1 PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK 有权
标题翻译：物理蒸汽沉积与阻抗匹配网络
公开(公告)号：US20100206718A1
公开(公告)日：2010-08-19
申请号：US12389253
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/088 , C23C14/345 , H01J37/32651 , H01J37/3408 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

8. 发明申请

US20100039482A1 MULTILAYER BODY, PIEZOELECTRIC ELEMENT, AND LIQUID EJECTING DEVICE 有权
标题翻译：多层体，压电元件和液体喷射装置
公开(公告)号：US20100039482A1
公开(公告)日：2010-02-18
申请号：US12538977
申请日：2009-08-11
申请人： Takamichi FUJII , Takami Arakawa , Takayuki Naono , Yoshikazu Hishinuma
发明人： Takamichi FUJII , Takami Arakawa , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： H01L41/047 , H01L41/22 , B41J2/045
CPC分类号： H01L41/0815 , B41J2/1612 , B41J2/1642 , B41J2/1646 , H01L41/0477 , Y10T29/42
摘要： A multilayer body which includes a low-resistance metal layer having a low electrical resistance, excellent thermal resistance and low surface irregularity is provided. The multilayer body includes a substrate, and a low-resistance metal layer which is formed on the substrate and has a single-layer structure or a multilayer structure of two or more sublayers. The low-resistance metal layer includes a gold-containing layer or sublayer composed of gold and another metal.
摘要翻译：提供一种包括具有低电阻，优异的耐热性和低表面不规则性的低电阻金属层的多层体。多层体包括基板和形成在基板上的具有单层结构或两层以上的亚层的多层结构的低电阻金属层。低电阻金属层包括由金和另一种金属构成的含金层或子层。

9. 发明申请

US20090066188A1 PIEZOELECTRIC DEVICE, LIQUID DROPLET EJECTING HEAD USING THE SAME, AND PROCESS FOR PRODUCING THE SAME 审中-公开
标题翻译：压电装置，使用其的液滴喷射头及其制造方法
公开(公告)号：US20090066188A1
公开(公告)日：2009-03-12
申请号：US12204690
申请日：2008-09-04
申请人： Takayuki NAONO , Takami ARAKAWA , Takamichi FUJII
发明人： Takayuki NAONO , Takami ARAKAWA , Takamichi FUJII
IPC分类号： H02N2/04 , B41J2/045 , H01L41/22
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1646 , H01L41/0805 , H01L41/0973 , H01L41/1876 , H01L41/316 , Y10T29/42
摘要： The piezoelectric device includes a piezoelectric film that expands or contracts according to variations in voltage applied, a first electrode provided on a first side of the film, and a second electrode provided on a second side of the film. The film is formed on the second electrode by a vapor phase deposition and mainly composed of PbxByOz. An element at site B is at least one element selected from the group consisting of Ti, Zr, V, Nb, Ta, Cr, Mo, W, Mn, Sc, Co, Cu, In, Sn, Ga, Zn, Cd, Fe, and Ni, and 0
摘要翻译：压电装置包括根据施加的电压的变化而膨胀或收缩的压电膜，设置在膜的第一面上的第一电极和设置在膜的第二面上的第二电极。该膜通过气相沉积形成在第二电极上，主要由Pb x B y O z组成。位置B处的元素是选自Ti，Zr，V，Nb，Ta，Cr，Mo，W，Mn，Sc，Co，Cu，In，Sn，Ga，Zn，Cd中的至少一种元素， Fe和Ni，0

10. 发明授权

US08672457B2 Piezoelectric film and method of manufacturing same, piezoelectric device and liquid ejection apparatus 有权
标题翻译：压电薄膜及其制造方法，压电装置和液体喷射装置
公开(公告)号：US08672457B2
公开(公告)日：2014-03-18
申请号：US13206805
申请日：2011-08-10
申请人： Takayuki Naono
发明人： Takayuki Naono
IPC分类号： B41J2/045
CPC分类号： B41J2/14233 , B41J2/161 , B41J2/1628 , B41J2/1646 , B41J2202/03 , C23C14/08 , C23C14/345 , C23C14/54 , H01L41/0805 , H01L41/1876 , H01L41/316
摘要： A piezoelectric film is constituted of a perovskite oxide represented as: Pb1+δ(ZrxTiy)1-a(MgbNb1-b)aOz, where δ and z are values within ranges where a perovskite structure is obtained and δ=0 and z=3 are standard, Pb is replaceable with another A site element in an amount of a range where the perovskite structure is obtained, b is a value in a range of 0.090≦b≦0.25, and a Nb ratio at a B site satisfies 0.13≦a×(1−b).
摘要翻译：压电体膜由以Pb表示的钙钛矿型氧化物构成：Pb1 +δ（ZrxTiy）1-a（MgbNb1-b）aOz，其中δ和z为获得钙钛矿结构且δ= 0且z = 3的范围内的值是标准的，Pb可以用另一个A位元素替代，其中得到钙钛矿结构的范围，b是0.090 @ b @ 0.25的范围，B位的Nb比满足0.13 @ a ×（1-b）。

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