会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明申请
    • Multi-mode synchronous memory device and methods of operating and testing same
    • 多模同步存储器件及其操作和测试方法相同
    • US20050094432A1
    • 2005-05-05
    • US11001231
    • 2004-12-01
    • Brian JohnsonBrent KeethJeffery JanzenTroy ManningChris Martin
    • Brian JohnsonBrent KeethJeffery JanzenTroy ManningChris Martin
    • G01R31/28G11C7/10G11C7/22G11C11/401G11C11/407G11C29/14G11C11/00
    • G11C29/12015G11C7/1078G11C7/109G11C7/22G11C7/222G11C29/14
    • A synchronous semiconductor memory device is operable in a normal mode and an alternative mode. The semiconductor device has a command bus for receiving a plurality of synchronously captured input signals, and a plurality of asynchronous input terminals for receiving a plurality of asynchronous input signals. The device further has a clock input for receiving an external clock signal thereon, with the device being specified by the manufacturer to be operated in the normal mode using an external clock signal having a frequency no less than a predetermined minimum frequency. An internal delay locked loop (DLL) clocking circuit is coupled to the clock input terminal and is responsive in normal operating mode to be responsive to the external clock signal to generate at least one internal clock signal. control circuitry in the device is responsive to a predetermined sequence of asynchronous signals applied to the device's asynchronous input terminals to place the device in an alternative mode of operation in which the internal clocking circuit is disabled, such that the device may be operated in the alternative mode using an external clock signal having a frequency less than the predetermined minimum frequency. The alternative mode of operation facilitates testing of the device at a speed less than the minimum frequency specified for the normal mode of operation.
    • 同步半导体存储器件可以在正常模式和替代模式下操作。 半导体器件具有用于接收多个同步捕获的输入信号的命令总线和用于接收多个异步输入信号的多个异步输入端子。 该装置还具有用于在其上接收外部时钟信号的时钟输入,该装置由制造商指定为使用具有不小于预定最小频率的频率的外部时钟信号在正常模式下操作。 内部延迟锁定环(DLL)时钟电路耦合到时钟输入端并且在正常操作模式下响应于外部时钟信号响应以产生至少一个内部时钟信号。 设备中的控制电路响应于施加到设备的异步输入端子的预定的异步信号序列,以将设备置于其中内部时钟电路被禁用的替代操作模式,使得该设备可以以替代方式操作 模式使用具有小于预定最小频率的频率的外部时钟信号。 替代的操作模式便于以低于为正常操作模式指定的最小频率的速度测试设备。
    • 10. 发明授权
    • 256 Meg dynamic random access memory
    • 256 Meg动态随机存取存储器
    • US07969810B2
    • 2011-06-28
    • US12381143
    • 2009-03-06
    • Brent KeethLayne G. BunkerScott J. DemerRonald L TaylorJohn S. MullinRaymond J. BeffaFrank F. RossLarry D. Kinsman
    • Brent KeethLayne G. BunkerScott J. DemerRonald L TaylorJohn S. MullinRaymond J. BeffaFrank F. RossLarry D. Kinsman
    • G11C7/00
    • G11C5/063G11C5/025G11C5/145G11C5/147G11C11/401G11C11/4074G11C11/4076G11C11/4097G11C11/4099G11C29/021G11C29/028G11C29/12G11C29/12005G11C29/46G11C29/787G11C2029/0407H01L27/10805H01L2224/4826H01L2224/73215H01L2924/1305H01L2924/13091H01L2924/00
    • A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to datalines. A data path is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks. A plurality of voltage supplies provide the voltages needed in the array and in the peripheral circuits. The power supplies are organized to match their power output to the power demand and to maintain a desired ratio of power production capability and decoupling capacitance. A powerup sequence circuit is provided to control the powerup of the chip. Redundant rows and columns are provided as is the circuitry necessary to logically replace defective rows and columns with operational rows and columns. Circuitry is also provided on chip to support various types of test modes.
    • 一个256兆赫动态随机存取存储器由组成单独阵列的多个单元组成,阵列被组织成32兆赫阵列阵列,它们被组织成64兆象限。 感测放大器位于各个阵列中的相邻行之间,而行解码器位于各个阵列中的相邻列之间。 在某些间隙单元中,提供多路复用器以将信号从I / O线传送到数据线。 提供了一种数据路径,除了上述之外,还包括阵列I / O块,响应于来自每个象限的数据,将数据输出到数据读取复用器,数据缓冲器和数据驱动器焊盘。 写数据路径包括用于向阵列I / O块提供数据的缓冲器和数据写入多路复用器中的数据。 提供电源总线,其最小化外部提供的电压的路由,完全环绕每个阵列块,并且在每个阵列块内提供网格化的功率分配。 多个电压源提供阵列和外围电路中所需的电压。 电源组合以将其功率输出与功率需求相匹配,并保持所需的功率生产能力和去耦电容的比例。 提供上电序列电路以控制芯片的上电。 提供了冗余的行和列,就像使用操作行和列逻辑地替换有缺陷的行和列所需的电路一样。 芯片上还提供电路以支持各种类型的测试模式。