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1. 发明授权

US08779465B2 Semiconductor device and method of forming a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08779465B2
公开(公告)日：2014-07-15
申请号：US12441311
申请日：2006-09-22
申请人： Jean-Michel Reynes , Philippe Lance , Evgueniy Stefanov , Yann Weber
发明人： Jean-Michel Reynes , Philippe Lance , Evgueniy Stefanov , Yann Weber
IPC分类号： H01L27/06 , H01L21/331
CPC分类号： H01L29/66719 , H01L29/0634 , H01L29/66712 , H01L29/7393 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.
摘要翻译：半导体器件布置包括半导体器件和注射器器件。半导体器件包括第一导电类型的第一电流电极区域，第一导电类型的第二电流电极区域，第一和第二电流电极区域之间的漂移区域，以及至少一个第二导电类型的浮动区域形成于漂移区。注射器装置被布置成当半导体器件接通时接收激活信号，并且响应于接收到激活信号而将第二导电类型的电荷载流子注入漂移区域和至少一个浮动区域。

2. 发明申请

US20090267112A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及形成半导体器件的方法
公开(公告)号：US20090267112A1
公开(公告)日：2009-10-29
申请号：US12441311
申请日：2006-09-22
申请人： Jean-Michel Reynes , Philippe Lance , Stefanov Evgieniy , Yann Weber
发明人： Jean-Michel Reynes , Philippe Lance , Stefanov Evgieniy , Yann Weber
IPC分类号： H01L27/06 , H01L21/331
CPC分类号： H01L29/66719 , H01L29/0634 , H01L29/66712 , H01L29/7393 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.
摘要翻译：半导体器件布置包括半导体器件和注射器器件。半导体器件包括第一导电类型的第一电流电极区域，第一导电类型的第二电流电极区域，第一和第二电流电极区域之间的漂移区域，以及至少一个第二导电类型的浮动区域形成于漂移区。注射器装置被布置成当半导体器件接通时接收激活信号，并且响应于接收到激活信号而将第二导电类型的电荷载流子注入漂移区域和至少一个浮动区域。

3. 发明申请

US20100001344A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及形成半导体器件的方法
公开(公告)号：US20100001344A1
公开(公告)日：2010-01-07
申请号：US12522036
申请日：2007-01-10
申请人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
IPC分类号： H01L29/78 , H01L21/22
CPC分类号： H01L29/66719 , H01L29/0623 , H01L29/0634 , H01L29/42372 , H01L29/66712 , H01L29/7395 , H01L29/7811 , H01L29/8083
摘要： A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
摘要翻译：形成具有有源区域和围绕有源区域的端接区域的半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，并在半导体层上形成掩模层。掩模层概述半导体层的表面的至少两部分：概述有源区域中的浮动区域的第一轮廓部分和概述终止区域中的终止区域的第二轮廓部分。将第二导电类型的半导体材料提供给第一和第二轮廓部分，以便提供掩埋在有源区域中的半导体层中的第二导电类型的浮动区域和埋在第二导电类型中的第二导电类型的第一端接区域半导体器件的端接区域中的半导体层。

4. 发明申请

US20100155828A1 FIELD-EFFECT SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：场效应半导体器件及其形成方法
公开(公告)号：US20100155828A1
公开(公告)日：2010-06-24
申请号：US12063424
申请日：2005-08-10
申请人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
发明人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/1045 , H01L29/1095 , H01L29/66712
摘要： A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
摘要翻译：半导体器件包括半导体层，形成在半导体层中并从半导体层的第一表面延伸的第一导电类型的主体区域，形成在体区中的第二导电类型的第一区域和第二区域的第一导电类型形成在身体区域中。第一区域从半导体层的第一表面延伸并提供半导体器件的电流电极区域。第二区域围绕第一区域。第二区域中的第一导电类型的掺杂浓度大于体区中第一导电类型的掺杂浓度。

5. 发明授权

US08217448B2 Semiconductor device and method of forming a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08217448B2
公开(公告)日：2012-07-10
申请号：US12522033
申请日：2007-01-04
申请人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
IPC分类号： H01L21/336 , H01L29/78
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42368 , H01L29/66712
摘要： A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer. The first region and second region are driven into the semiconductor layer so as to form a pre-control region of the first conductivity type extending into the semiconductor layer from the surface and under a portion of the control region and a graded body region of the second conductivity type extending into the semiconductor layer under the pre-control region. A body region is formed by providing semiconductor material of the second conductivity type to the outlined first portion. The body region extends into the pre-control region. A current electrode region is formed in the body region.
摘要翻译：一种形成半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，在半导体层中形成第一导电类型的第一区域，并在半导体层上形成控制区域和第一个地区的一部分。在半导体层上形成掩模层，并且在第一区域的一部分上划出半导体层的表面的第一部分。第二导电类型的半导体材料被提供到轮廓的第一部分以在半导体层中提供第二区域。第一区域和第二区域被驱动到半导体层中，以便形成从控制区域的表面和部分控制区域延伸到半导体层的第一导电类型的预置区域和第二区域的分级体区域导电类型延伸到预控制区域下方的半导体层。通过将第二导电类型的半导体材料提供给轮廓的第一部分来形成体区。身体区域延伸到预控区域内。在身体区域中形成电流电极区域。

6. 发明授权

US07955929B2 Method of forming a semiconductor device having an active area and a termination area 有权
标题翻译：形成具有有源区和终端区的半导体器件的方法
公开(公告)号：US07955929B2
公开(公告)日：2011-06-07
申请号：US12522036
申请日：2007-01-10
申请人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Ivana Deram , Jean-Michel Reynes
IPC分类号： H01L21/336 , H01L21/425
CPC分类号： H01L29/66719 , H01L29/0623 , H01L29/0634 , H01L29/42372 , H01L29/66712 , H01L29/7395 , H01L29/7811 , H01L29/8083
摘要： A method of forming a semiconductor device having an active area and a termination area surrounding the active area comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate and forming a mask layer over the semiconductor layer. The mask layer outlines at least two portions of a surface of the semiconductor layer: a first outlined portion outlining a floating region in the active area and a second outlined portion outlining a termination region in the termination area. Semiconductor material of a second conductivity type is provided to the first and second outlined portions so as to provide a floating region of the second conductivity type buried in the semiconductor layer in the active area and a first termination region of the second conductivity type buried in the semiconductor layer in the termination area of the semiconductor device.
摘要翻译：形成具有有源区域和围绕有源区域的端接区域的半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，并在半导体层上形成掩模层。掩模层概述半导体层的表面的至少两部分：概述有源区域中的浮动区域的第一轮廓部分和概述终止区域中的终止区域的第二轮廓部分。将第二导电类型的半导体材料提供给第一和第二轮廓部分，以便提供掩埋在有源区域中的半导体层中的第二导电类型的浮动区域和埋在第二导电类型中的第二导电类型的第一端接区域半导体器件的端接区域中的半导体层。

7. 发明申请

US20100109078A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及形成半导体器件的方法
公开(公告)号：US20100109078A1
公开(公告)日：2010-05-06
申请号：US12522033
申请日：2007-01-04
申请人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
发明人： Evgueniy Stefanov , Alain Deram , Jean-Michel Reynes
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0878 , H01L29/42368 , H01L29/66712
摘要： A method of forming a semiconductor device comprises providing a semiconductor substrate, providing a semiconductor layer of a first conductivity type over the semiconductor substrate, forming a first region of the first conductivity type in the semiconductor layer, and forming a control region over the semiconductor layer and over part of the first region. A mask layer is formed over the semiconductor layer and outlines a first portion of a surface of the semiconductor layer over part of the first region. Semiconductor material of a second conductivity type is provided to the outlined first portion to provide a second region in the semiconductor layer. The first region and second region are driven into the semiconductor layer so as to form a pre-control region of the first conductivity type extending into the semiconductor layer from the surface and under a portion of the control region and a graded body region of the second conductivity type extending into the semiconductor layer under the pre-control region. A body region is formed by providing semiconductor material of the second conductivity type to the outlined first portion. The body region extends into the pre-control region. A current electrode region is formed in the body region.
摘要翻译：一种形成半导体器件的方法包括提供半导体衬底，在半导体衬底上提供第一导电类型的半导体层，在半导体层中形成第一导电类型的第一区域，并在半导体层上形成控制区域和第一个地区的一部分。在半导体层上形成掩模层，并且在第一区域的一部分上划出半导体层的表面的第一部分。第二导电类型的半导体材料被提供到轮廓的第一部分以在半导体层中提供第二区域。第一区域和第二区域被驱动到半导体层中，以便形成从控制区域的表面和部分控制区域延伸到半导体层的第一导电类型的预置区域和第二区域的分级体区域导电类型延伸到预控制区域下方的半导体层。通过将第二导电类型的半导体材料提供给轮廓的第一部分来形成体区。身体区域延伸到预控区域内。在身体区域中形成电流电极区域。

8. 发明授权

US08188539B2 Field-effect semiconductor device and method of forming the same 有权
标题翻译：场效应半导体器件及其形成方法
公开(公告)号：US08188539B2
公开(公告)日：2012-05-29
申请号：US12063424
申请日：2005-08-10
申请人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
发明人： Jean-Michel Reynes , Isabelle Majoral , Jean-Pierre Pujo , Evgueniy Stefanov
IPC分类号： H01L29/78
CPC分类号： H01L29/7802 , H01L29/1045 , H01L29/1095 , H01L29/66712
摘要： A semiconductor device comprises a semiconductor layer, a body region of a first conductivity type formed in the semiconductor layer and extending from a first surface of the semiconductor layer, a first region of a second conductivity type formed in the body region, and a second region of the first conductivity type formed in the body region. The first region extends from the first surface of the semiconductor layer and provides a current electrode region of the semiconductor device. The second region surrounds the first region. The doping concentration of the first conductivity type in the second region is greater than a doping concentration of the first conductivity type in the body region.
摘要翻译：半导体器件包括半导体层，形成在半导体层中并从半导体层的第一表面延伸的第一导电类型的主体区域，形成在体区中的第二导电类型的第一区域和第二区域的第一导电类型形成在身体区域中。第一区域从半导体层的第一表面延伸并提供半导体器件的电流电极区域。第二区域围绕第一区域。第二区域中的第一导电类型的掺杂浓度大于体区中第一导电类型的掺杂浓度。

9. 发明授权

US06773977B1 Method of forming a diode for integration with a semiconductor device and method of forming a transistor device having an integrated diode 失效
标题翻译：形成用于与半导体器件集成的二极管的方法和形成具有集成二极管的晶体管器件的方法
公开(公告)号：US06773977B1
公开(公告)日：2004-08-10
申请号：US09715748
申请日：2000-11-17
申请人： Jean-Michel Reynes , Ivana Deram , Evgueniy Stefanov
发明人： Jean-Michel Reynes , Ivana Deram , Evgueniy Stefanov
IPC分类号： H01L218234
CPC分类号： H01L29/66719 , H01L27/0629 , H01L29/66136 , H01L29/66712 , H01L29/7804
摘要： The present invention relates to a method of forming a diode (2) for integration with a semiconductor device comprising the steps of providing a layer (4) of semiconductor material, forming a dielectric layer (6) over the layer of semiconductor material, introducing a first conductivity type dopant into the dielectric layer (6), forming a semi-conductive layer (8) over the dielectric layer (6), introducing a second conductivity type dopant into a first region (12) of the semi-conductive layer and re-distributing the first conductivity type dopant from the dielectric layer (6) into the semi-conductive layer (8) so as to form a second region (18) of the first conductivity type dopant in the semi-conductive layer (8), the second region (18) being adjacent the first region (12) so as to provide a P/N junction of the diode (2).
摘要翻译：本发明涉及一种形成与半导体器件集成的二极管（2）的方法，包括以下步骤：提供半导体材料层（4），在半导体材料层上形成介电层（6），引入在所述电介质层（6）中形成第一导电型掺杂剂，在所述电介质层（6）上形成半导电层（8），将第二导电类型掺杂剂引入所述半导体层的第一区域（12）将所述第一导电型掺杂剂从所述介电层（6）分布到所述半导体层（8）中，以在所述半导电层（8）中形成所述第一导电类型掺杂剂的第二区域（18），第二区域（18）与第一区域（12）相邻，以便提供二极管（2）的P / N结。

10. 发明授权

US08004049B2 Power semiconductor device 有权
标题翻译：功率半导体器件
公开(公告)号：US08004049B2
公开(公告)日：2011-08-23
申请号：US11574478
申请日：2004-08-31
申请人： Jean-Michel Reynes , Stephane Alves , Ivana Deram , Blandino Lopes , Joel Margheritta , Frederico Morancho
发明人： Jean-Michel Reynes , Stephane Alves , Ivana Deram , Blandino Lopes , Joel Margheritta , Frederico Morancho
IPC分类号： H01L27/088
CPC分类号： H01L29/7802 , H01L29/0623 , H01L29/0634 , H01L29/0696 , H01L29/0878
摘要： A device includes an array of cells, the source regions of the individual cells comprising a plurality of source region branches each extending towards a source region branch of an adjacent cell, the base regions of the individual cells comprising a corresponding plurality of base region branches merging together to form a single base region surrounding the source regions. The junctions between the merged base region and the drain region define rounded current conduction path areas for the on-state of the device between adjacent cells. Floating voltage regions of opposite conductivity type to the drain region are buried in the substrate beneath the merged base region. The features of the floating voltage regions define rings of the opposite conductivity type to the drain region that surround the current conduction paths of respective cells. The floating voltage regions include respective islands situated within the current conduction paths.
摘要翻译：一种设备包括单元阵列，各个单元的源区域包括多个源区域分支，每个源区域分支延伸到相邻单元的源区域分支，各个单元的基区包括对应的多个基本区域分支合并一起形成围绕源区域的单个碱基区域。合并的基极区域和漏极区域之间的结界定义用于相邻单元之间的器件的导通状态的圆形电流传导路径区域。与漏极区相反的导电类型的浮动电压区域埋在合并的基极区域下面的衬底中。浮动电压区域的特征限定环绕相应电池的电流传导路径的漏极区域的相反导电类型的环。浮置电压区域包括位于电流传导路径内的相应的岛。

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