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1. 发明授权

US08779465B2 Semiconductor device and method of forming a semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08779465B2
公开(公告)日：2014-07-15
申请号：US12441311
申请日：2006-09-22
申请人： Jean-Michel Reynes , Philippe Lance , Evgueniy Stefanov , Yann Weber
发明人： Jean-Michel Reynes , Philippe Lance , Evgueniy Stefanov , Yann Weber
IPC分类号： H01L27/06 , H01L21/331
CPC分类号： H01L29/66719 , H01L29/0634 , H01L29/66712 , H01L29/7393 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.
摘要翻译：半导体器件布置包括半导体器件和注射器器件。半导体器件包括第一导电类型的第一电流电极区域，第一导电类型的第二电流电极区域，第一和第二电流电极区域之间的漂移区域，以及至少一个第二导电类型的浮动区域形成于漂移区。注射器装置被布置成当半导体器件接通时接收激活信号，并且响应于接收到激活信号而将第二导电类型的电荷载流子注入漂移区域和至少一个浮动区域。

2. 发明申请

US20110089483A1 METHOD OF FORMING A POWER SEMICONDUCTOR DEVICE AND POWER SEMICONDUCTOR DEVICE 有权
标题翻译：形成功率半导体器件和功率半导体器件的方法
公开(公告)号：US20110089483A1
公开(公告)日：2011-04-21
申请号：US12999143
申请日：2008-06-30
申请人： Jean Michel Reynes , Evgueniy Stafanov , Yann Weber
发明人： Jean Michel Reynes , Evgueniy Stafanov , Yann Weber
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0878 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813
摘要： A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer into the epitaxial layer, wherein a junction between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region. In operation of the semiconductor device, the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.
摘要翻译：一种形成功率半导体器件的方法包括：形成跨过功率半导体器件延伸的第一导电类型的第一半导体层; 在所述第一半导体层上形成第一导电类型的外延层，所述外延层具有从所述外延层的第一表面朝向所述第一半导体层增加的掺杂浓度; 在从所述外延层的所述第一表面延伸到所述外延层中的所述外延层中形成第二导电类型的体区，其中所述体区和所述外延层之间的接合处于或基本上邻近所述外延层的区域具有最大掺杂浓度; 以及形成栅极区域，使得栅极区域与身体区域的至少一部分相邻。在半导体器件的工作中，与栅极区相邻的体区的部分用作半导体器件的沟道区。

3. 发明申请

US20090267112A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING A SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件及形成半导体器件的方法
公开(公告)号：US20090267112A1
公开(公告)日：2009-10-29
申请号：US12441311
申请日：2006-09-22
申请人： Jean-Michel Reynes , Philippe Lance , Stefanov Evgieniy , Yann Weber
发明人： Jean-Michel Reynes , Philippe Lance , Stefanov Evgieniy , Yann Weber
IPC分类号： H01L27/06 , H01L21/331
CPC分类号： H01L29/66719 , H01L29/0634 , H01L29/66712 , H01L29/7393 , H01L29/7803 , H01L29/7804
摘要： A semiconductor device arrangement comprises a semiconductor device and an injector device. The semiconductor device comprises a first current electrode region of a first conductivity type, a second current electrode region of the first conductivity type, a drift region between the first and the second current electrode regions, and at least one floating region of a second conductivity type formed in the drift region. The injector device is arranged to receive an activation signal when the semiconductor device is turned on and to inject charge carriers of the second conductivity type into the drift region and the at least one floating region in response to receiving the activation signal.
摘要翻译：半导体器件布置包括半导体器件和注射器器件。半导体器件包括第一导电类型的第一电流电极区域，第一导电类型的第二电流电极区域，第一和第二电流电极区域之间的漂移区域，以及至少一个第二导电类型的浮动区域形成于漂移区。注射器装置被布置成当半导体器件接通时接收激活信号，并且响应于接收到激活信号而将第二导电类型的电荷载流子注入漂移区域和至少一个浮动区域。

4. 发明授权

US08592894B2 Method of forming a power semiconductor device and power semiconductor device 有权
标题翻译：形成功率半导体器件和功率半导体器件的方法
公开(公告)号：US08592894B2
公开(公告)日：2013-11-26
申请号：US12999143
申请日：2008-06-30
申请人： Jean Michel Reynes , Evgueniy Stafanov , Yann Weber
发明人： Jean Michel Reynes , Evgueniy Stafanov , Yann Weber
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7811 , H01L29/0619 , H01L29/0878 , H01L29/66333 , H01L29/66348 , H01L29/66712 , H01L29/66734 , H01L29/7395 , H01L29/7397 , H01L29/7802 , H01L29/7813
摘要： A method of forming a power semiconductor device comprises forming a first semiconductor layer of a first conductivity type extending across the power semiconductor device; forming an epitaxial layer of the first conductivity type over the first semiconductor layer, the epitaxial layer having a doping concentration that increases from a first surface of the epitaxial layer towards the first semiconductor layer; forming a body region of a second conductivity type in the epitaxial layer extending from the first surface of the epitaxial layer into the epitaxial layer, wherein a junction between the body region and the epitaxial layer is at or substantially adjacent to a region of the epitaxial layer having a maximum doping concentration; and forming a gate region such that the gate region is adjacent at least a portion of the body region. In operation of the semiconductor device, the portion of the body region adjacent the gate region functions as a channel region of the semiconductor device.
摘要翻译：一种形成功率半导体器件的方法包括：形成跨过功率半导体器件延伸的第一导电类型的第一半导体层; 在所述第一半导体层上形成第一导电类型的外延层，所述外延层具有从所述外延层的第一表面朝向所述第一半导体层增加的掺杂浓度; 在从所述外延层的所述第一表面延伸到所述外延层中的所述外延层中形成第二导电类型的体区，其中所述体区和所述外延层之间的接合处于或基本上邻近所述外延层的区域具有最大掺杂浓度; 以及形成栅极区域，使得栅极区域与身体区域的至少一部分相邻。在半导体器件的工作中，与栅极区相邻的体区的部分用作半导体器件的沟道区。

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