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1. 发明授权

US08551791B2 Apparatus and method for manufacturing semiconductor devices through layer material dimension analysis 有权
公开(公告)号：US08551791B2
公开(公告)日：2013-10-08
申请号：US12457873
申请日：2009-06-24
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park , Ji-Hye Kim , Kwan-Woo Ryu , Kong-Jung Sa , So-Yeon Yun
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park , Ji-Hye Kim , Kwan-Woo Ryu , Kong-Jung Sa , So-Yeon Yun
IPC分类号： H01L21/00 , G06K9/00 , G01N21/00
CPC分类号： G01N21/3563 , G01J3/447 , G01J4/00 , G01N21/9501 , H01L22/12
摘要： Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.

2. 发明授权

US07197426B2 Method and apparatus for measuring thickness of metal layer 失效
标题翻译：用于测量金属层厚度的方法和装置
公开(公告)号：US07197426B2
公开(公告)日：2007-03-27
申请号：US11191069
申请日：2005-07-28
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
IPC分类号： G01B11/28
CPC分类号： G01B11/0666
摘要： In a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate first, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.
摘要翻译：在用于测量形成在半导体衬底上的金属层的厚度的方法和装置中，第一，第二和第三光脉冲被连续照射在金属层的顶表面上，以产生相应的第一，第二和第三声波金属层。第一和第二声波之间的干扰改变了第三光脉冲从金属层的检测反射率。发生声波的最大干扰，其中第一声波在第二光脉冲到达金属层的表面所需的同一时间内移动到金属层的底表面并返回到顶表面。因此，使用第一声波的速度和第一和第二光脉冲之间的时间滞后来确定金属层的厚度。

3. 发明申请

US20090325326A1 Apparatus and method for manufacturing semiconductor devices through layer material dimension analysis 有权
标题翻译：通过层材料尺寸分析制造半导体器件的装置和方法
公开(公告)号：US20090325326A1
公开(公告)日：2009-12-31
申请号：US12457873
申请日：2009-06-24
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park , Ji-Hye Kim , Kwan-Woo Ryu , Kong-Jung Sa , So-Yeon Yun
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park , Ji-Hye Kim , Kwan-Woo Ryu , Kong-Jung Sa , So-Yeon Yun
IPC分类号： H01L21/66 , G01J4/00
CPC分类号： G01N21/3563 , G01J3/447 , G01J4/00 , G01N21/9501 , H01L22/12
摘要： Apparatus and method for manufacturing a semiconductor device through a layer material dimension analysis increase productivity. The method includes performing a semiconductor manufacturing process of at least one reference substrate and at least one target substrate in a semiconductor process device, detecting a reference spectrum and a reference profile for the reference substrate, determining a relation function between the detected reference spectrum and reference profile, detecting a real-time spectrum of the target substrate, and determining in real time a real-time profile of the target substrate processed in the semiconductor process device by using the detected real-time spectrum as a variable in the determined relation function.
摘要翻译：通过层材料尺寸分析制造半导体器件的装置和方法提高了生产率。该方法包括在半导体工艺装置中执行至少一个参考基板和至少一个目标基板的半导体制造工艺，检测参考基板的参考光谱和参考分布，确定所检测的参考光谱和参考光谱之间的关系函数检测目标衬底的实时光谱，并且通过使用检测到的实时光谱作为确定的关系函数中的变量来实时确定在半导体处理装置中处理的目标衬底的实时曲线。

4. 发明申请

US20060052979A1 Method and apparatus for measuring thickness of metal layer 失效
标题翻译：用于测量金属层厚度的方法和装置
公开(公告)号：US20060052979A1
公开(公告)日：2006-03-09
申请号：US11191069
申请日：2005-07-28
申请人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
发明人： Jang-Ik Park , Chung-Sam Jun , Hwan-Shik Park
IPC分类号： G01B11/02 , G01B13/02
CPC分类号： G01B11/0666
摘要： Disclosed are a method and apparatus for measuring a thickness of a metal layer formed on a semiconductor substrate. First, second, and third light pulses are successively irradiated onto a top surface of the metal layer to generate respective first, second, and third second sonic waves in the metal layer. Interference between the first and second sonic waves alters a detected reflectivity of the third light pulse off the metal layer. Maximum interference of the sonic waves occurs where the first sonic wave travels to a bottom surface of the metal layer and back to the top surface in the same time that it takes for the second light pulse to arrive at the surface of the metal layer. Accordingly, the velocity of the first sonic wave and a time lag between the first and second light pulses are used to determine the thickness of the metal layer.
摘要翻译：公开了一种用于测量形成在半导体衬底上的金属层的厚度的方法和装置。第一，第二和第三光脉冲依次照射到金属层的顶表面上，以在金属层中产生相应的第一，第二和第三声波。第一和第二声波之间的干扰改变了第三光脉冲从金属层的检测反射率。发生声波的最大干扰，其中第一声波在第二光脉冲到达金属层的表面所需的同一时间内移动到金属层的底表面并返回到顶表面。因此，使用第一声波的速度和第一和第二光脉冲之间的时间滞后来确定金属层的厚度。

5. 发明申请

US20050083539A1 Apparatus and method for measuring a thickness of a substrate 失效
标题翻译：用于测量衬底厚度的装置和方法
公开(公告)号：US20050083539A1
公开(公告)日：2005-04-21
申请号：US10912559
申请日：2004-08-06
申请人： Hwan-Shik Park , Sun-Yong Choi , Chung-Sam Jun , Kye-Weon Kim
发明人： Hwan-Shik Park , Sun-Yong Choi , Chung-Sam Jun , Kye-Weon Kim
IPC分类号： G01B11/06 , G01B11/28
CPC分类号： G01B11/06
摘要： An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.
摘要翻译：一种测量衬底厚度的装置和方法。第一光从具有已知厚度的标准样品反射。光通过光聚焦透镜集中。通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。操作单元分别从第一和第二电信号确定第一和第二峰值。操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。

6. 发明授权

US08446583B2 Light focusing unit and spectrum measuring apparatus having the same 有权
标题翻译：光聚焦单元和具有该聚焦单元的光谱测量装置
公开(公告)号：US08446583B2
公开(公告)日：2013-05-21
申请号：US12662650
申请日：2010-04-27
申请人： Hyun-Jong Kim , Chung-Sam Jun , Hwan-Shik Park
发明人： Hyun-Jong Kim , Chung-Sam Jun , Hwan-Shik Park
IPC分类号： G01J4/00
CPC分类号： G01J3/02 , G01J3/0208 , G01J3/0224 , G01N21/211 , G01N2021/213 , G01N2021/214
摘要： A light focusing unit and a spectrum measuring apparatus having the same are provided. The light focusing unit includes a light source section configured to emit light, a light guiding section configured to guide the light emitted from the light source section along multiple parallel light incidence paths, and a light focusing section configured to direct the light from the guiding section to be incident on a test position of a sample at different incidence angles.
摘要翻译：提供了一种聚光单元和具有该聚光单元的光谱测量装置。光聚焦单元包括被配置为发光的光源部分，被配置为沿着多个平行的光入射路径引导从光源部分发射的光的导光部分和被配置为引导来自引导部分的光的光聚焦部分以不同的入射角入射到样品的测试位置。

7. 发明申请

US20100277729A1 Light focusing unit and spectrum measuring apparatus having the same 有权
标题翻译：光聚焦单元和具有该聚焦单元的光谱测量装置
公开(公告)号：US20100277729A1
公开(公告)日：2010-11-04
申请号：US12662650
申请日：2010-04-27
申请人： Hyun-Jong Kim , Chung-Sam Jun , Hwan-Shik Park
发明人： Hyun-Jong Kim , Chung-Sam Jun , Hwan-Shik Park
IPC分类号： G01J3/447 , F21V13/02
CPC分类号： G01J3/02 , G01J3/0208 , G01J3/0224 , G01N21/211 , G01N2021/213 , G01N2021/214
摘要： A light focusing unit and a spectrum measuring apparatus having the same are provided. The light focusing unit includes a light source section configured to emit light, a light guiding section configured to guide the light emitted from the light source section along multiple parallel light incidence paths, and a light focusing section configured to direct the light from the guiding section to be incident on a test position of a sample at different incidence angles.
摘要翻译：提供了一种聚光单元和具有该聚光单元的光谱测量装置。光聚焦单元包括被配置为发光的光源部分，被配置为沿着多个平行的光入射路径引导从光源部分发射的光的导光部分和被配置为引导来自引导部分的光的光聚焦部分以不同的入射角入射到样品的测试位置。

8. 发明授权

US07355729B2 Apparatus and method for measuring a thickness of a substrate 失效
标题翻译：用于测量衬底厚度的装置和方法
公开(公告)号：US07355729B2
公开(公告)日：2008-04-08
申请号：US10912559
申请日：2004-08-06
申请人： Hwan-Shik Park , Sun-Yong Choi , Chung-Sam Jun , Kye-Weon Kim
发明人： Hwan-Shik Park , Sun-Yong Choi , Chung-Sam Jun , Kye-Weon Kim
IPC分类号： G01B11/28
CPC分类号： G01B11/06
摘要： An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.
摘要翻译：一种测量衬底厚度的装置和方法。第一光从具有已知厚度的标准样品反射。光通过光聚焦透镜集中。通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。操作单元分别从第一和第二电信号确定第一和第二峰值。操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。

9. 发明申请

US20060073691A1 Methods of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20060073691A1
公开(公告)日：2006-04-06
申请号：US11240048
申请日：2005-09-30
申请人： Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hwan-Shik Park
发明人： Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hwan-Shik Park
IPC分类号： H01L21/44
CPC分类号： H01L21/76897 , H01L27/10852 , H01L28/91
摘要： In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.
摘要翻译：在制造包括电容器的半导体器件的方法中，在半导体衬底上形成第一模制层。部分蚀刻第一模具层以形成包括用于电容器的开口的第一模具层图案。第一下电极层形成在第一模层图案上。包括多个第一孔的第二下电极层形成在第一下电极层和开口中。去除第一下电极层和第二下电极层的上部，以在开口中形成第一下电极和第二下电极。电介质层和上电极依次形成在第一下电极和第二下电极上。因此，可以获得具有增大的电容的电容器。

10. 发明授权

US07375003B2 Methods of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07375003B2
公开(公告)日：2008-05-20
申请号：US11240048
申请日：2005-09-30
申请人： Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hwan-Shik Park
发明人： Joo-Byoung Yoon , Jin-Sung Kim , Kyung-Woo Lee , Yeong-Cheol Lee , Sang-Jun Park , Hwan-Shik Park
IPC分类号： H01L21/20
CPC分类号： H01L21/76897 , H01L27/10852 , H01L28/91
摘要： In a method of manufacturing a semiconductor device including a capacitor, a first mold layer is formed on a semiconductor substrate. The first mold layer is partially etched to form a first mold layer pattern including an opening for a capacitor. A first lower electrode layer is formed on the first mold layer pattern. A second lower electrode layer including a plurality of first pores is formed on the first lower electrode layer and in the opening. Upper portions of the first lower electrode layer and the second lower electrode layer are removed to form a first lower electrode and a second lower electrode in the opening. A dielectric layer and an upper electrode are successively formed on the first lower electrode and the second lower electrode. Therefore, a capacitor having an enhanced capacitance may be obtained.
摘要翻译：在制造包括电容器的半导体器件的方法中，在半导体衬底上形成第一模制层。部分蚀刻第一模具层以形成包括用于电容器的开口的第一模具层图案。第一下电极层形成在第一模层图案上。包括多个第一孔的第二下电极层形成在第一下电极层和开口中。去除第一下电极层和第二下电极层的上部，以在开口中形成第一下电极和第二下电极。电介质层和上电极依次形成在第一下电极和第二下电极上。因此，可以获得具有增大的电容的电容器。

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