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1. 发明授权

US5185056A Method and apparatus for etching semiconductor wafers and developing resists 失效
标题翻译：用于蚀刻半导体晶片和显影抗蚀剂的方法和设备
公开(公告)号：US5185056A
公开(公告)日：1993-02-09
申请号：US759277
申请日：1991-09-13
申请人： Ricardo I. Fuentes , Inna V. Babich
发明人： Ricardo I. Fuentes , Inna V. Babich
IPC分类号： H01L21/00
CPC分类号： H01L21/6708 , H01L21/67075
摘要： An apparatus for modifying, such as etching or developing, selected areas of a wafer is disclosed including a rotatable turntable upon which a wafer having a surface to be etched is mounted. A delivery nozzle for directing modifying fluid onto the wafer surface is disposed over the wafer surface at a first location. At least one structure for removing the modifying fluid, such as a vacuum nozzle is positioned over the surface of the wafer at a second location. The modifying fluid moves across the wafer surface by centrifugal force away from the first location and is removed at the second location. The surface area of the wafer between the first and second locations is modified by the etching fluid.
摘要翻译：公开了一种用于修改，例如蚀刻或显影晶片的选定区域的装置，其包括可旋转的转盘，其上安装有待蚀刻表面的晶片。用于将修饰流体引导到晶片表面上的输送喷嘴在第一位置处设置在晶片表面上。用于去除改性流体的至少一个结构，例如真空喷嘴位于第二位置的晶片表面上方。改性流体通过远离第一位置的离心力跨越晶片表面移动，并在第二位置移除。在第一和第二位置之间的晶片的表面积被蚀刻流体改变。

2. 发明授权

US6132644A Energy sensitive electrically conductive admixtures 失效
标题翻译：能量敏感的导电外加剂
公开(公告)号：US6132644A
公开(公告)日：2000-10-17
申请号：US086238
申请日：1998-05-28
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
IPC分类号： H01B1/12 , H01L23/532 , H01B1/20
CPC分类号： H01B1/12 , H01L23/5328 , H01L2924/0002
摘要： The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
摘要翻译：本发明是导电材料和能量敏感材料的混合物，导致导电能量敏感组合物。该结构可用于微电子制造中的光刻，以避免对来自电子束的抗蚀剂充电的影响。该组合物也可用于扫描电子测量和静电消散的应用中。

3. 发明授权

US06348299B1 RIE etch resistant nonchemically amplified resist composition and use thereof 失效
标题翻译： RIE蚀刻抗化学放大抗蚀剂组合物及其用途
公开(公告)号：US06348299B1
公开(公告)日：2002-02-19
申请号：US09351428
申请日：1999-07-12
申请人： Ari Aviram , Inna V. Babich
发明人： Ari Aviram , Inna V. Babich
IPC分类号： G03C516
CPC分类号： G03F7/039 , G03F7/0042
摘要： Photoresist compositions of improved reactive ion etching comprising polymers of 2-hydroxyalkyl methacrylate and/or 2-hydroxyalkylacrylate and a titanate, zirconate and/or hafnate are provided. The photoresist compositions are used for forming positive lithographic patterns.
摘要翻译：提供了包括2-羟烷基甲基丙烯酸酯和/或2-羟基烷基丙烯酸酯和钛酸酯，锆酸酯和/或铪酸盐的聚合物的改进的反应离子蚀刻的光致抗蚀剂组合物。光致抗蚀剂组合物用于形成正的光刻图案。

4. 发明授权

US06251569B1 Forming a pattern of a negative photoresist 有权
标题翻译：形成负光致抗蚀剂的图案
公开(公告)号：US06251569B1
公开(公告)日：2001-06-26
申请号：US09373555
申请日：1999-08-13
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03F730
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.
摘要翻译：已经发现了一组新的基于聚合物侧基碳基 - 氧键重新分配的非化学扩增负色调水/水基（可显影（photo））抗蚀剂。

5. 发明授权

US06197896B1 Graft polymers and use thereof 失效
标题翻译：接枝聚合物及其用途
公开(公告)号：US06197896B1
公开(公告)日：2001-03-06
申请号：US09351421
申请日：1999-07-12
申请人： Ari Aviram , Inna V. Babich
发明人： Ari Aviram , Inna V. Babich
IPC分类号： C08F842
CPC分类号： C08F8/42
摘要： Solutions of graft polymers of a polymer having reactive hydrogen groups and grafted through reactive hydrogen groups an alkoxy metallic compound wherein the metal is titanium, zirconium and/or hafnium are useful as photoresist materials which are resistant to plasma. Also, compounds and graft polymers wherein the alkoxy metallic compound also contains silicon, tin or germanium are provided.
摘要翻译：具有反应性氢基并通过反应性氢基接枝的聚合物的接枝聚合物的溶液是烷氧基金属化合物，其中金属是钛，锆和/或铪可用作耐等离子体的光致抗蚀剂材料。此外，提供了其中烷氧基金属化合物还含有硅，锡或锗的化合物和接枝聚合物。

6. 发明授权

US06617086B2 Forming a pattern of a negative photoresist 有权
公开(公告)号：US06617086B2
公开(公告)日：2003-09-09
申请号：US09796445
申请日：2001-03-02
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Katherina E. Babich , James J. Bucchignano , Karen E. Petrillo , Steven A. Rishton
IPC分类号： G03C300
CPC分类号： G03F7/0758 , G03F7/038 , Y10S430/111
摘要： A new group of non-chemically amplified negative tone water/aqueous base developable (photo) resists based on redistribution of carbon-oxygen bonds in pendant ester groups of the polymers has been found.

7. 发明授权

US06685853B1 Energy sensitive electrically conductive admixtures, uses thereof, methods of fabrication and structures fabricated therewith 有权
标题翻译：能量敏感的导电掺合物，其用途，制造方法和用其制造的结构
公开(公告)号：US06685853B1
公开(公告)日：2004-02-03
申请号：US09614230
申请日：2000-07-12
申请人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
发明人： Marie Angelopoulos , Edward D. Babich , Inna V. Babich , Kuang-Jung Chen , Wayne Martin Moreau , David E. Seeger
IPC分类号： H01B112
CPC分类号： H01B1/12 , H01L23/5328 , H01L2924/0002 , H01L2924/00
摘要： The present invention is an admixture of an electrically conductive material and an energy sensitive material resulting in a conductive energy sensitive composition. The structures are useful for lithography in microelectronic fabrication to avoid the effects of charging on resists from electron beams. The compositions are also useful in applications of scanning electron metrology and static dissipation.
摘要翻译：本发明是导电材料和能量敏感材料的混合物，导致导电能量敏感组合物。该结构可用于微电子制造中的光刻，以避免对来自电子束的抗蚀剂充电的影响。该组合物也可用于扫描电子测量和静电消散的应用中。

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