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    • 1. 发明授权
    • Low-noise frequency synthesizer
    • 低噪音频率合成器
    • US5789987A
    • 1998-08-04
    • US589362
    • 1996-01-22
    • James Gregory MittelScott Humphreys
    • James Gregory MittelScott Humphreys
    • H03L7/07H03L7/093H03L7/06H03C1/06
    • H03L7/0805H03L7/07H03L7/093
    • A frequency synthesizer (100) is utilized for producing an output signal (124) which is phase locked to a reference signal (110) operating at a reference frequency. The frequency synthesizer (100) comprises a main phase lock loop (PLL) (102), and a tracker PLL (128). The main PLL (102) includes a phase detector (112), two frequency dividers (108, 126), a loop filter (116), a notch filter (118), and a controlled oscillator (122). The tracker PLL (128) phase locks to the reference signal (110), and biases the notch filter (118) in order to maintain an accurate lock on the notch frequency which is proportional to the reference frequency. All circuits are integrated in the same monolithic device in order to track parametric tolerances such as transconductances of the operational transconductance devices included in the tracker PLL (128) and the notch filter (118).
    • 频率合成器(100)用于产生与参考频率工作的参考信号(110)相位锁定的输出信号(124)。 频率合成器(100)包括主锁相环(PLL)(102)和跟踪器PLL(128)。 主PLL(102)包括相位检测器(112),两个分频器(108,126),环路滤波器(116),陷波滤波器(118)和受控振荡器(122)。 跟踪器PLL(128)相锁定到参考信号(110),并且偏置陷波滤波器(118),以便保持与参考频率成比例的陷波频率的准确锁定。 所有电路都集成在相同的单片设备中,以便跟踪参数公差,例如包括在跟踪器PLL(128)和陷波滤波器(118)中的工作跨导器件的跨导。
    • 4. 发明申请
    • FRACTIONAL-N OFFSET PHASE LOCKED LOOP
    • 分段相位锁相环
    • US20060170505A1
    • 2006-08-03
    • US11047258
    • 2005-01-31
    • Scott HumphreysRyan BunchBarry HuntAlexander Wayne Hietala
    • Scott HumphreysRyan BunchBarry HuntAlexander Wayne Hietala
    • H03L7/00
    • H03L7/1976H03C3/0966H03L7/23H03L2207/12
    • A fractional-N offset phase locked loop (FN-OPLL) is provided. The FN-OPLL includes a fractional divider, a phase detector, a loop filter, a voltage controlled oscillator (VCO), and feedback circuitry. Combiner circuitry combines an initial fractional divide value and a modulation signal to provide a combined fractional divide value. Based on the combined fractional divide value, the fractional-N divider divides a reference frequency and provides a divided reference frequency to the phase detector. The phase detector compares a phase of the divided reference frequency to a phase of a feedback signal to provide a comparison signal. The comparison signal is filtered by the loop filter to provide a control signal to the VCO, where the control signal controls a frequency of an output signal of the VCO. The output signal is processed by the feedback circuitry to provide the feedback signal to the phase detector.
    • 提供了一个分数N偏移锁相环(FN-OPLL)。 FN-OPLL包括分数分频器,相位检测器,环路滤波器,压控振荡器(VCO)和反馈电路。 组合器电路组合初始分数除法值和调制信号以提供组合分数除数值。 基于组合分数除法,分数N分频器划分参考频率,并向相位检测器提供分频参考频率。 相位检测器将分频参考频率的相位与反馈信号的相位进行比较,以提供比较信号。 比较信号由环路滤波器滤波,以向VCO提供控制信号,其中控制信号控制VCO的输出信号的频率。 输出信号由反馈电路处理,以将反馈信号提供给相位检测器。
    • 6. 发明授权
    • Low power precision current reference
    • 低功率精密电流参考
    • US6087894A
    • 2000-07-11
    • US32877
    • 1998-03-02
    • Raymond Louis Barrett, Jr.Barry W. HeroldScott HumphreysLawrence L. Case
    • Raymond Louis Barrett, Jr.Barry W. HeroldScott HumphreysLawrence L. Case
    • G05F3/26G05F3/02
    • G05F3/262
    • A first complementary metal oxide semiconductor (CMOS) current reference circuit (100, 500) has a first and a second current mirror (110, 150) and is implemented using one of bulk wafer technology and silicon on insulator (SOI) technology. The first current mirror (110) has an output stage (130) that includes at least one cascode coupled field effect transistor (FET) (125) having one of a source tied well (when implemented using bulk wafer technology) or a source tied body (when implemented using SOI technology). A second CMOS current reference circuit (600, 800) has a first and a second current mirror (650, 610) and is implemented using SOI technology. The first current mirror (650) has a first bias FET (161) having a gate tied body.
    • 第一互补金属氧化物半导体(CMOS)电流参考电路(100,500)具有第一和第二电流镜(110,150),并且使用体晶片技术和绝缘体上硅(SOI)技术之一来实现。 第一电流镜(110)具有输出级(130),该输出级包括至少一个共源共栅耦合场效应晶体管(FET)(125),其具有源极连接(当使用体晶片技术实现时)或源极体 (使用SOI技术实现时)。 第二CMOS电流参考电路(600,800)具有第一和第二电流镜(650,610),并且使用SOI技术来实现。 第一电流镜(650)具有具有门接合体的第一偏置FET(161)。