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1. 发明授权

US06380568B1 CMOS image sensor and method for fabricating the same 失效
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US06380568B1
公开(公告)日：2002-04-30
申请号：US09604772
申请日：2000-06-28
申请人： Jae-Dong Lee , Sang-Joo Lee
发明人： Jae-Dong Lee , Sang-Joo Lee
IPC分类号： H01L2972
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A CMOS image sensor containing a plurality of unit pixels, each unit pixel having a light sensing region and a peripheral circuit region, includes: a semiconductor substrate of a first conductive type; a transistor formed on the peripheral circuit region of the semiconductor substrate, wherein the transistor has a gate oxide layer and a gate electrode formed on the gate oxide layer; spacers formed on sidewalls of the gate oxide layer and the gate electrode, wherein one spacer are formed on the light sensing region; a first doping region of a second conductive type formed on the light sensing region, wherein the first doping region is extended to an edge of the gate electrode; and a second doping region of the first conductive type formed on the first doping region, wherein the second doping region is extended to an edge of a spacer formed on the light sensing region.
摘要翻译：包含多个单位像素的CMOS图像传感器，具有光感测区域和外围电路区域的每个单位像素包括：第一导电类型的半导体衬底; 形成在所述半导体衬底的外围电路区域上的晶体管，其中所述晶体管具有形成在所述栅极氧化物层上的栅极氧化物层和栅电极; 形成在栅极氧化物层和栅电极的侧壁上的间隔物，其中一个间隔物形成在光感测区域上; 形成在所述光感测区域上的第二导电类型的第一掺杂区域，其中所述第一掺杂区域延伸到所述栅电极的边缘; 以及形成在所述第一掺杂区域上的所述第一导电类型的第二掺杂区域，其中所述第二掺杂区域延伸到形成在所述光感测区域上的间隔物的边缘。

2. 发明授权

US06518115B2 CMOS image sensor and method for fabricating the same 失效
公开(公告)号：US06518115B2
公开(公告)日：2003-02-11
申请号：US09891212
申请日：2001-06-26
申请人： Jae-Dong Lee , Sang-Joo Lee
发明人： Jae-Dong Lee , Sang-Joo Lee
IPC分类号： H01L218238
CPC分类号： H01L27/14609 , H01L27/14643
摘要： A CMOS image sensor containing a plurality of unit pixels, each unit pixel having a light sensing region and a peripheral circuit region, includes: a semiconductor substrate of a first conductive type; a transistor formed on the peripheral circuit region of the semiconductor substrate, wherein the transistor has a gate oxide layer and a gate electrode formed on the gate oxide layer; spacers formed on sidewalls of the gate oxide layer and the gate electrode, wherein one spacer are formed on the light sensing region; a first doping region of a second conductive type formed on the light sensing region, wherein the first doping region is extended to an edge of the gate electrode; and a second doping region of the first conductive type formed on the first doping region, wherein the second doping region is extended to an edge of a spacer formed on the light sensing region.

3. 发明申请

US20090011599A1 SLURRY COMPOSITIONS FOR SELECTIVELY POLISHING SILICON NITRIDE RELATIVE TO SILICON OXIDE, METHODS OF POLISHING A SILICON NITRIDE LAYER AND METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：用于选择性地氧化硅氧化物的硅酸盐组合物，用于抛光氮化硅层的方法和使用其制造半导体器件的方法
公开(公告)号：US20090011599A1
公开(公告)日：2009-01-08
申请号：US12167781
申请日：2008-07-03
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L21/304 , C09K3/14
CPC分类号： H01L21/31053 , C09G1/02 , H01L29/66583 , H01L29/66795 , H01L29/7851
摘要： Slurry compositions for selectively polishing silicon nitride relative to silicon oxide, methods of polishing a silicon nitride layer and methods of manufacturing a semiconductor device using the same are provided. The slurry compositions include a first agent for reducing an oxide polishing rate, an abrasive particle and water, and the first agent includes poly(acrylic acid). The slurry composition may have a high polishing selectivity of silicon nitride relative to silicon oxide to be employed in selectively polishing a silicon nitride layer in a semiconductor manufacturing process.
摘要翻译：提供了相对于氧化硅选择性研磨氮化硅的浆料组合物，研磨氮化硅层的方法和使用其制造半导体器件的方法。浆料组合物包括用于降低氧化物抛光速率的第一试剂，磨料颗粒和水，并且第一试剂包括聚（丙烯酸）。浆料组合物可以具有相对于氧化硅的氮化硅相对于在半导体制造工艺中选择性研磨氮化硅层的高抛光选择性。

4. 发明申请

US20090001051A1 Slurry compositions for polishing metal, methods of polishing a metal object and methods of forming a metal wiring using the same 有权
标题翻译：用于抛光金属的浆料组合物，抛光金属物体的方法和使用其形成金属布线的方法
公开(公告)号：US20090001051A1
公开(公告)日：2009-01-01
申请号：US12213941
申请日：2008-06-26
申请人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Jong-Won Lee , Sang-Yeob Han , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： C09K13/00 , C23F1/04
CPC分类号： C23F3/00 , C09G1/02
摘要： A slurry composition for polishing metal includes a polymeric polishing accelerating agent, the polymeric polishing accelerating agent including a backbone of hydrocarbon and a side substituent having at least one of a sulfonate ion (SO3−) and a sulfate ion (OSO3−), and an acidic aqueous solution.
摘要翻译：用于抛光金属的浆料组合物包括聚合物抛光促进剂，所述聚合物抛光促进剂包括烃的主链和具有磺酸根离子（SO 3 - ）和硫酸根离子（OSO 3 - ）中的至少一种的侧取代基，酸性水溶液。

5. 发明申请

US20070145012A1 Slurry and method for chemical-mechanical polishing 审中-公开
标题翻译：浆料和化学机械抛光方法
公开(公告)号：US20070145012A1
公开(公告)日：2007-06-28
申请号：US11542256
申请日：2006-10-04
申请人： Joon-Sang Park , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
发明人： Joon-Sang Park , Jong-Won Lee , Chang-Ki Hong , Bo-Un Yoon , Jae-Dong Lee
IPC分类号： C09K13/00 , C03C15/00 , B44C1/22
CPC分类号： C09K3/1463 , C09G1/02 , H01L21/3212
摘要： Disclosed is a slurry and method for chemical-mechanical polishing operation. The slurry may contain abrasive particles, an oxidizer, a pH controller, a chelating agent and water. The viscosity of the slurry may be in the range of about 1.0 cP—about 1.05 cP, so that the step difference may be reduced between regions with patterns and without patterns even after completing the chemical-mechanical polishing operation. A permissible rate of depth of focus (DOF) may not need to be controlled in the subsequent photolithography operation, which may enable the subsequent photolithography operation to be conducted by an optical system with relatively low DOF.
摘要翻译：公开了一种用于化学机械抛光操作的浆料和方法。浆料可以含有磨料颗粒，氧化剂，pH控制剂，螯合剂和水。浆料的粘度可以在约1.0cP-约1.05cP的范围内，使得即使在完成化学机械抛光操作之后，也可以在具有图案的区域与无图案的区域之间降低阶梯差。在随后的光刻操作中可能不需要控制焦深（DOF）的允许率，这可以使得随后的光刻操作能够由具有相对低的DOF的光学系统进行。

6. 发明授权

US07144301B2 Method and system for planarizing integrated circuit material 有权
标题翻译：用于平面化集成电路材料的方法和系统
公开(公告)号：US07144301B2
公开(公告)日：2006-12-05
申请号：US10947458
申请日：2004-09-22
申请人： Kwang-Bok Kim , Jae-Kwang Choi , Yong-Sun Ko , Chang-Ki Hong , Kyung-Hyun Kim , Jae-Dong Lee
发明人： Kwang-Bok Kim , Jae-Kwang Choi , Yong-Sun Ko , Chang-Ki Hong , Kyung-Hyun Kim , Jae-Dong Lee
IPC分类号： B24B7/22
CPC分类号： C09G1/02 , B24B37/044 , B24B49/16 , B24B57/02
摘要： For planarizing an IC (integrate circuit) material, a first slurry is dispensed for a first planarization of the IC material using the first slurry, and a second slurry is dispensed for a second planarization of the IC material using the second slurry. The first and second slurries are different. For example, the first slurry is silica based for faster planarization during the first planarization. Thereafter, the second planarization is performed with the second slurry that is ceria based with higher planarity for attaining sufficient planarization of the IC material.
摘要翻译：为了平坦化IC（集成电路）材料，使用第一浆料分配第一浆料以使IC材料的第一平面化，并且使用第二浆料分配第二浆料以进行IC材料的第二平面化。第一和第二种浆料是不同的。例如，第一浆料是二氧化硅基，用于在第一平面化期间更快的平坦化。此后，利用二氧化铈为基础，以更高的平面度进行第二平坦化，以获得IC材料的充分平坦化。

7. 发明授权

US08929955B2 Touch information communication terminal, touch screen information providing apparatus and touch information communication method thereof 有权
标题翻译：触摸信息通信终端，触摸屏信息提供装置及其触摸信息通信方法
公开(公告)号：US08929955B2
公开(公告)日：2015-01-06
申请号：US13131850
申请日：2009-12-15
申请人： Soon-Chul Jung , Mun-Suk Kang , Jae-Dong Lee , Yu-Jin Huh , Mi-Kyoung Kang , Sang-Hong Lee , Jin-Soo Sohn , Dae-Woo Choi
发明人： Soon-Chul Jung , Mun-Suk Kang , Jae-Dong Lee , Yu-Jin Huh , Mi-Kyoung Kang , Sang-Hong Lee , Jin-Soo Sohn , Dae-Woo Choi
IPC分类号： H04B1/38 , H04L29/08 , H04L29/06 , H04W4/20
CPC分类号： H04L67/34 , H04L65/1006 , H04L67/04 , H04L67/36 , H04W4/20
摘要： A touch information communication method transmits notification information to the touch screen information providing apparatus by carrying the notification information, which notifies a touch communication terminal is a touch communication terminal, on a call signal in a telephone communication network; receives touch screen information and touch control information corresponding to the touch screen information from the touch screen information providing apparatus; and when a user touches a predetermined area on a screen, determines the touched area and transmits touch input information corresponding to the touched area to the touch screen information providing apparatus.
摘要翻译：触摸信息通信方法通过在电话通信网络中的呼叫信号上携带通知触摸通信终端是触摸通信终端的通知信息来向触摸屏信息提供装置发送通知信息; 从触摸屏信息提供装置接收与触摸屏信息相对应的触摸屏信息和触摸控制信息; 并且当用户触摸屏幕上的预定区域时，确定所触摸的区域并将与触摸区域相对应的触摸输入信息发送到触摸屏信息提供装置。

8. 发明申请

US20110237308A1 TOUCH INFORMATION COMMUNICATION TERMINAL, TOUCH SCREEN INFORMATION PROVIDING APPARATUS AND TOUCH INFORMATION COMMUNICATION METHOD THEREOF 有权
标题翻译：触摸信息通信终端，触摸屏信息提供设备和触摸信息通信方法
公开(公告)号：US20110237308A1
公开(公告)日：2011-09-29
申请号：US13131850
申请日：2009-12-15
申请人： Soon-Chul Jung , Mun-Suk Kang , Jae-Dong Lee , Yu-Jin Huh , Mi-Kyoung Kang , Sang-Hong Lee , Jin-Soo Sohn , Dae-Woo Choi
发明人： Soon-Chul Jung , Mun-Suk Kang , Jae-Dong Lee , Yu-Jin Huh , Mi-Kyoung Kang , Sang-Hong Lee , Jin-Soo Sohn , Dae-Woo Choi
IPC分类号： H04B1/38
CPC分类号： H04L67/34 , H04L65/1006 , H04L67/04 , H04L67/36 , H04W4/20
摘要： A touch information communication method transmits notification information to the touch screen information providing apparatus by carrying the notification information, which notifies a touch communication terminal is a touch communication terminal, on a call signal in a telephone communication network; receives touch screen information and touch control information corresponding to the touch screen information from the touch screen information providing apparatus; and when a user touches a predetermined area on a screen, determines the touched area and transmits touch input information corresponding to the touched area to the touch screen information providing apparatus.
摘要翻译：触摸信息通信方法通过在电话通信网络中的呼叫信号上携带通知触摸通信终端是触摸通信终端的通知信息来向触摸屏信息提供装置发送通知信息; 从触摸屏信息提供装置接收与触摸屏信息相对应的触摸屏信息和触摸控制信息; 并且当用户触摸屏幕上的预定区域时，确定所触摸的区域并将与触摸区域相对应的触摸输入信息发送到触摸屏信息提供装置。

9. 发明申请

US20080277767A1 Semiconductor device including a planarized surface and method thereof 审中-公开
公开(公告)号：US20080277767A1
公开(公告)日：2008-11-13
申请号：US12219201
申请日：2008-07-17
申请人： Jae-Dong Lee , Yong-Pil Han , Chang-Ki Hong
发明人： Jae-Dong Lee , Yong-Pil Han , Chang-Ki Hong
IPC分类号： H01L21/306 , H01L23/58 , H01L21/76
CPC分类号： H01L21/76224
摘要： A method of planarizing the surface of a semiconductor substrate to reduce the occurrence of a dishing phenomenon. A patterned etch stop layer defining a trench region is formed on a substrate. The substrate is etched to form a trench region, and a medium material layer and an oxide layer are subsequently formed on the substrate, filling the trench region. Chemical mechanical polishing (CMP) is performed on the oxide layer until the medium material layer is exposed. CMP is then performed until the patterned etch stop layer is exposed and a planarized oxide layer is formed. Because the medium material layer has a higher removal rate during CMP than the oxide layer, occurrences of the dishing phenomenon are reduced. A slurry including an anionic surfactant is used to increase the CMP removal ratio of the medium material layer to the oxide layer.

10. 发明授权

US07442646B2 Slurry, chemical mechanical polishing method using the slurry, and method of forming metal wiring using the slurry 有权
标题翻译：使用浆料的浆料，化学机械抛光方法，以及使用该浆料形成金属配线的方法
公开(公告)号：US07442646B2
公开(公告)日：2008-10-28
申请号：US11077150
申请日：2005-03-11
申请人： Sung-Jun Kim , Jeong-Heon Park , Chang-Ki Hong , Jae-Dong Lee
发明人： Sung-Jun Kim , Jeong-Heon Park , Chang-Ki Hong , Jae-Dong Lee
IPC分类号： H01L21/302
CPC分类号： C09G1/02 , H01L21/3212
摘要： A slurry, chemical mechanical polishing (CMP) method using the slurry, and method of forming metal wiring using the slurry. The slurry may include a polishing agent, an oxidant, and at least one defect inhibitor to protect the metal film. The CMP method and method of forming metal wiring may employ one or two slurries with at least one of the slurries including at least one defect inhibitor.
摘要翻译：使用浆料的浆料，化学机械抛光（CMP）方法以及使用该浆料形成金属配线的方法。浆料可以包括抛光剂，氧化剂和至少一种保护金属膜的缺陷抑制剂。形成金属布线的CMP方法和方法可以使用一种或两种浆料，其中至少一种浆料包括至少一种缺陷抑制剂。

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