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1. 发明授权

US06930054B2 Slurry composition for use in chemical mechanical polishing of metal wiring 有权
标题翻译：用于金属布线的化学机械抛光的浆料组合物
公开(公告)号：US06930054B2
公开(公告)日：2005-08-16
申请号：US10485500
申请日：2002-08-06
申请人： Jae Seok Lee , Won Joong Do , Hyun Soo Roh , Kil Sung Lee , Jong Won Lee , Bo Un Yoon , Sang Rok Hah , Joon Sang Park , Chang Ki Hong
发明人： Jae Seok Lee , Won Joong Do , Hyun Soo Roh , Kil Sung Lee , Jong Won Lee , Bo Un Yoon , Sang Rok Hah , Joon Sang Park , Chang Ki Hong
IPC分类号： B24B37/00 , C09G1/02 , C09K3/14 , H01L21/304 , H01L21/321 , H01L21/302
CPC分类号： H01L21/3212 , C09G1/02
摘要： Disclosed herein are slurry compositions for use in CMP(chemical mechanical polishing) process of metal wiring in manufacturing semiconductor devices, comprising a peroxide, an inorganic acid, a propylenediaminetetraacetate(PDTA)-metal complex, a carboxylic acid, a metal oxide powder, and de-ionized water, wherein the PDTA-metal complex plays a major role in improving overall polishing performance and reproducibility thereof by preventing abraded tungsten oxide from readhesion onto the polished surface, as well as in improving the dispersion stability of the slurry composition.
摘要翻译：本文公开了用于制造半导体器件中金属布线的CMP（化学机械抛光）工艺的浆料组合物，其包括过氧化物，无机酸，丙二胺四乙酸（PDTA） - 金属络合物，羧酸，金属氧化物粉末和去离子水，其中PDTA-金属络合物通过防止研磨的氧化钨再次粘附到抛光表面上以及提高浆料组合物的分散稳定性，在提高整体抛光性能和再现性方面起主要作用。

2. 发明授权

US06551367B2 Process for preparing metal oxide slurry suitable for semiconductor chemical mechanical polishing 有权
标题翻译：制备适用于半导体化学机械抛光的金属氧化物浆料的方法
公开(公告)号：US06551367B2
公开(公告)日：2003-04-22
申请号：US09867522
申请日：2001-05-31
申请人： Kil Sung Lee , Jae Seok Lee , Seok Jin Kim , Tu Won Chang
发明人： Kil Sung Lee , Jae Seok Lee , Seok Jin Kim , Tu Won Chang
IPC分类号： C09K314
CPC分类号： C09K3/1463 , C09G1/02
摘要： There is disclosed a process for preparing a metal oxide CMP slurry suitable for semiconductor devices, wherein a mixture comprising 1 to 50 weight % of a metal oxide and 50 to 99 weight % of water is mixed in a pre-mixing tank, transferred to a dispersion chamber with the aid of a transfer pump, allowed to have a flow rate of not less than 100 m/sec by pressurization with a high pressure pump, and subjected to counter collision for dispersion through two orifices in the dispersion chamber. The slurry has particles which are narrow in particle size distribution, showing an ultrafine size ranging from 30 to 500 nm. Also, the slurry is not polluted at all during its preparation and shows no tailing phenomena, so that it is preventive of &mgr;-scratching. Therefore, it can be used in the planarization for shallow trench isolation, interlayer dielectrics and inter metal dielectrics through a CMP process.
摘要翻译：公开了一种制备适用于半导体器件的金属氧化物CMP浆料的方法，其中将包含1至50重量％的金属氧化物和50至99重量％的水的混合物混合在预混合罐中，转移至借助于输送泵的分散室，通过用高压泵加压使其具有不小于100m /秒的流速，并通过分散室中的两个孔进行反向碰撞以进行分散。该浆料具有粒径分布窄的粒子，显示出30〜500nm的超细尺寸。此外，浆料在其制备过程中根本不会被污染，并且不显示拖尾现象，因此可以防止刮擦。因此，可以通过CMP工艺在浅沟槽隔离，层间电介质和金属间电介质的平面化中使用。

3. 发明授权

US06447694B1 Composition for chemical mechanical polishing 有权
标题翻译：化学机械抛光用组合物
公开(公告)号：US06447694B1
公开(公告)日：2002-09-10
申请号：US09598768
申请日：2000-06-22
申请人： Kil Sung Lee , Seok Jin Kim , Jae Seok Lee , Tu Won Chang
发明人： Kil Sung Lee , Seok Jin Kim , Jae Seok Lee , Tu Won Chang
IPC分类号： C09K1300
CPC分类号： C09G1/02 , C09K3/1436 , C09K3/1463 , H01L21/3212
摘要： Disclosed is a polishing composition which comprises an Al2O3/SiO2 composite-based metal oxide powder, deionized water and an additive, said metal oxide powder comprising an Al2O3/SiO2 composite as an essential component. The polishing composition is superior in removal rate and free of causing microscratches after polishing and thus, suitable for use in the global planarization of device wafer surfaces.
摘要翻译：公开了一种抛光组合物，其包含Al 2 O 3 / SiO 2复合基金属氧化物粉末，去离子水和添加剂，所述金属氧化物粉末包含Al 2 O 3 / SiO 2复合材料作为必要组分。抛光组合物在去除速度上优异，并且在抛光后不会引起微细化，因此适用于器件晶片表面的全局平面化。

4. 发明授权

US07452815B2 Methods of forming integrated circuit devices having polished tungsten metal layers therein 有权
标题翻译：形成其中具有抛光的钨金属层的集成电路器件的方法
公开(公告)号：US07452815B2
公开(公告)日：2008-11-18
申请号：US11148670
申请日：2005-06-09
申请人： Jae Seok Lee , Kil Sung Lee
发明人： Jae Seok Lee , Kil Sung Lee
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C11D3/14 , C09G1/02 , C11D7/06 , C11D7/08 , C11D7/263 , C11D11/0047 , H01L21/3212
摘要： Methods of forming integrated circuit devices use metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ≧8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.
摘要翻译：形成集成电路器件的方法使用具有相对低的化学蚀刻速率和相对高的机械抛光速率特性的金属CMP浆料组合物。使用相对高浓度的机械磨料（例如> = 8重量％）与足够量的润湿剂组合以抑制下面的表面（例如，绝缘层，导电通孔）的微划痕来实现相对较高的机械抛光速率特性，...）被抛光。浆料组合物还包括高度稳定的金属 - 丙二胺四乙酸酯（M-PDTA）络合物，其可以用于抑制正在抛光的金属表面上的金属氧化物再附着和/或通过与表面螯合来抑制金属表面的氧化。

5. 发明授权

US06953389B2 Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching 有权
标题翻译：金属CMP浆料组合物，其有利于机械去除氧化物，同时具有降低的微刮伤敏感性
公开(公告)号：US06953389B2
公开(公告)日：2005-10-11
申请号：US10959228
申请日：2004-10-06
申请人： Jae Seok Lee , Kil Sung Lee
发明人： Jae Seok Lee , Kil Sung Lee
IPC分类号： C09G1/02 , C11D3/14 , C11D7/06 , C11D7/08 , C11D7/26 , C11D11/00 , H01L21/302 , H01L21/321 , H01L21/461 , B24B1/00
CPC分类号： C11D3/14 , C09G1/02 , C11D7/06 , C11D7/08 , C11D7/263 , C11D11/0047 , H01L21/3212
摘要： Metal CMP slurry compositions having relatively low chemical etch rate and relatively high mechanical polishing rate characteristics are provided. The relatively high mechanical polishing rate characteristics are achieved using relatively high concentrations of mechanical abrasive (e.g., ≧8 wt %) in combination with sufficient quantities of a wetting agent to inhibit micro-scratching of underlying surfaces (e.g., insulating layers, conductive vias, . . . ) being polished. The slurry compositions also include a highly stable metal-propylenediaminetetraacetate (M-PDTA) complex, which may operate to inhibit metal-oxide re-adhesion on the metal surface being polished and/or inhibit oxidation of the metal surface by chelating with the surface.
摘要翻译：提供了具有相对低的化学蚀刻速率和相对高的机械抛光速率特性的金属CMP浆料组合物。使用相对高浓度的机械磨料（例如> = 8重量％）与足够量的润湿剂组合以抑制下面的表面（例如，绝缘层，导电通孔）的微划痕来实现相对较高的机械抛光速率特性，...）被抛光。浆料组合物还包括高度稳定的金属 - 丙二胺四乙酸酯（M-PDTA）络合物，其可以用于抑制正在抛光的金属表面上的金属氧化物再附着和/或通过与表面螯合来抑制金属表面的氧化。

6. 发明授权

US06488730B2 Polishing composition 有权
标题翻译：抛光组成
公开(公告)号：US06488730B2
公开(公告)日：2002-12-03
申请号：US09850209
申请日：2001-05-07
申请人： Kil Sung Lee , Jae Seok Lee , Seok Jin Kim , Young Ki Lee , Tu Won Chang
发明人： Kil Sung Lee , Jae Seok Lee , Seok Jin Kim , Young Ki Lee , Tu Won Chang
IPC分类号： B24D300
CPC分类号： H01L21/31053
摘要： The present invention relates to a polishing composition comprising 30 to 99 wt % of deionized water, 0.1 to 50 wt % of powder of metallic oxide and 0.01 to 20 wt % of cyclic amine. This polishing composition can be used in a chemical mechanical polishing of thin films in integrated circuit manufacturing and has an effect of minimizing the occurrence of microscratches on the thin film after polishing. Thereby it can be applied to the manufacturing process of highly integrated circuits such as Shallow Trench Isolation.
摘要翻译：本发明涉及一种抛光组合物，其包含30-99重量％的去离子水，0.1-50重量％的金属氧化物粉末和0.01-20重量％的环胺。该抛光组合物可用于集成电路制造中的薄膜的化学机械抛光，并且具有最小化抛光后薄膜上的微细纹差的发生的效果。因此，它可以应用于诸如浅沟槽隔离的高度集成电路的制造过程。

7. 发明授权

US06364919B1 Process for preparing metal oxide slurries suitable for the chemical mechanical polishing of semiconductors 有权
标题翻译：制备适用于半导体化学机械抛光的金属氧化物浆料的方法
公开(公告)号：US06364919B1
公开(公告)日：2002-04-02
申请号：US09535865
申请日：2000-03-27
申请人： Kil Sung Lee , Jae Seok Lee , Seok Jin Kim , Tu Won Chang
发明人： Kil Sung Lee , Jae Seok Lee , Seok Jin Kim , Tu Won Chang
IPC分类号： C09K314
CPC分类号： C09G1/02 , C01B13/145 , C01B33/1417 , C01P2004/51 , C01P2004/61 , C01P2004/62 , C01P2006/12 , C01P2006/22 , C09K3/1463
摘要： Disclosed is a process for preparing metal oxide slurries suitable for the chemical mechanical polishing (CMP) of semiconductor devices. A suspension of metal oxide in water is dispersed at a predetermined pressure through an orifice of a dispersion chamber while two intensifier pumps are used to maintain the pressure applied to the dispersion chamber constantly, resulting in restraining or minimizing the generation of macro particles as large as or larger than 1 &mgr;m. The metal oxide slurries are uniform in particle size with narrow particle size distribution and show excellent polishing performance with a significant reduction in the occurrence frequency of microscratches, so that they are suitable for CMP of ultra-integrated semiconductor devices.
摘要翻译：公开了一种制备适用于半导体器件的化学机械抛光（CMP）的金属氧化物浆料的方法。金属氧化物在水中的悬浮液以预定的压力通过分散室的孔分散，同时使用两个增压泵来恒定地施加到分散室上的压力，从而抑制或最小化大颗粒的产生，或大于1um。金属氧化物浆料的粒度均匀，粒度分布窄，显示出优异的抛光性能，显着降低了微观尺度的发生频率，因此适用于超集成半导体器件的CMP。

8. 发明申请

US20110169517A1 MEMS PROBE CARD AND METHOD OF MANUFACTURING SAME 审中-公开
标题翻译： MEMS探针卡及其制造方法
公开(公告)号：US20110169517A1
公开(公告)日：2011-07-14
申请号：US13062340
申请日：2009-06-19
申请人： Sang-Hee Kim , Sang Hyun Lee , Jae Seok Lee , Chun Sik Woo , Jae In Lee
发明人： Sang-Hee Kim , Sang Hyun Lee , Jae Seok Lee , Chun Sik Woo , Jae In Lee
IPC分类号： G01R31/00
CPC分类号： G01R3/00 , G01R1/06727 , G01R1/06744
摘要： Provided are a micro-electro-mechanical system (MEMS) probe card and a method for manufacturing thereof. The MEMS probe card includes a substrate provide with a via hole filler conductor or a via hole filled with the resistor, the resistive film formed on the via hole and the substrate, the insulating film and the resistive film formed on the resistive film and the substrate, and the electrode formed on the substrate to cover the insulating filmAs such, by means of a micro-electro-mechanical system (MEMS) probe card and a method for manufacturing thereof, the precise resistance value can be obtained and used for the semiconductor IC and others in the event of significant change in power.
摘要翻译：提供了一种微电子机械系统（MEMS）探针卡及其制造方法。 MEMS探针卡包括：衬底，其提供通孔填充导体或填充有电阻器的通孔，形成在通孔上的电阻膜和衬底，绝缘膜和形成在电阻膜和衬底上的电阻膜以及形成在基板上以覆盖绝缘膜的电极。因此，通过微电子机械系统（MEMS）探针卡及其制造方法，可以获得精确的电阻值并用于半导体 IC和其他在权力发生重大变化的情况下。

9. 发明授权

US09012858B2 X-ray detector and method for driving the same 有权
标题翻译： X射线检测器及其驱动方法
公开(公告)号：US09012858B2
公开(公告)日：2015-04-21
申请号：US13535734
申请日：2012-06-28
申请人： Kang Min Hwang , Hae Sung Lee , Jong Chul Kim , Jae Seok Lee
发明人： Kang Min Hwang , Hae Sung Lee , Jong Chul Kim , Jae Seok Lee
IPC分类号： H01L27/146 , H01L27/148 , G01T1/24
CPC分类号： G01T1/247 , G01T1/2018 , G01T1/24 , H04N5/32 , H04N5/361
摘要： Described embodiments provide an X-ray detector and a method for driving the same. The X-ray detector includes: a sensor panel in which a plurality of pixels are defined, the plurality of pixels each including a photodiode for converting light corresponding to incident X-ray into an electric signal, and a switching element connected to one terminal of the photodiode to control the output of the electric signal; a light emitting unit for providing light to the photodiode; and a voltage supply unit connected to the other terminal of the photodiode to selectively supply first and second voltages different from each other.
摘要翻译：描述的实施例提供一种X射线检测器及其驱动方法。 X射线检测器包括：传感器面板，其中限定了多个像素，所述多个像素各自包括用于将对应于入射X射线的光转换为电信号的光电二极管，以及连接到光电二极管控制电信号的输出; 用于向光电二极管提供光的发光单元; 以及电压供给单元，连接到所述光电二极管的另一个端子，以选择性地提供彼此不同的第一和第二电压。

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