专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08815688B2 Method of manufacturing power device 有权
标题翻译：功率器件制造方法
公开(公告)号：US08815688B2
公开(公告)日：2014-08-26
申请号：US13550920
申请日：2012-07-17
申请人： Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
发明人： Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
IPC分类号： H01L29/778
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/2003
摘要： A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.
摘要翻译：制造功率器件的方法包括在衬底上形成第一漂移区。通过图案化第一漂移区域形成沟槽。通过在沟槽中生长氮化镓（GaN）并且交替地设置第一漂移区和第二漂移区，形成第二漂移区。源电极接触层形成在第二漂移区上。在源电极接触层上形成源电极和栅电极。在基板的与第一漂移区域相反的一侧上形成漏电极。

2. 发明授权

US08963151B2 Nitride-based heterostructure field effect transistor having high efficiency 有权
标题翻译：氮化物基异质结场效应晶体管效率高
公开(公告)号：US08963151B2
公开(公告)日：2015-02-24
申请号：US13226108
申请日：2011-09-06
申请人： Jae Hoon Lee , Ki Se Kim
发明人： Jae Hoon Lee , Ki Se Kim
IPC分类号： H01L29/165 , H01L29/778 , H01L29/872 , H01L29/16 , H01L29/20
CPC分类号： H01L29/7787 , H01L29/1608 , H01L29/2003 , H01L29/872
摘要： A high efficiency HFET may include a substrate, a semi-insulating gallium nitride (GaN) layer formed on the substrate, an aluminum gallium nitride (AlGaN) layer formed on the GaN layer, and a silicon carbide (SixC1-x) functional layer formed on the AlGaN layer.
摘要翻译：高效HFET可以包括基板，形成在基板上的半绝缘氮化镓（GaN）层，形成在GaN层上的氮化铝（AlGaN）层和形成的碳化硅（SixC1-x）功能层在AlGaN层上。

3. 发明授权

US09295704B2 Composition for preventing or treating atopic dermatitis including galenical extract or lactobacillus fermentation thereof 有权
标题翻译：用于预防或治疗特应性皮炎的组合物，包括盖仑液提取物或其乳杆菌发酵
公开(公告)号：US09295704B2
公开(公告)日：2016-03-29
申请号：US13825839
申请日：2010-10-29
申请人： Jin Yeul Ma , Tae Ho Chung , Ga Young Im , Dong Seon Kim , Young Ran Um , Hyun Ae Eum , Jae Hoon Lee , Sung Up Choi , Byoung Heon Cho
发明人： Jin Yeul Ma , Tae Ho Chung , Ga Young Im , Dong Seon Kim , Young Ran Um , Hyun Ae Eum , Jae Hoon Lee , Sung Up Choi , Byoung Heon Cho
IPC分类号： A61K35/00 , A61K33/04 , A01N59/02 , A61K36/258 , A61K8/97 , A23L1/30 , A61K36/23 , A61K36/232 , A61K36/25 , A61K36/28 , A61K36/296 , A61K36/355 , A61K36/484 , A61K36/489 , A61K36/634 , A61K36/725 , A61K36/78 , A61K36/808 , A61Q19/00
CPC分类号： A61K36/258 , A23L33/105 , A61K8/97 , A61K36/23 , A61K36/232 , A61K36/238 , A61K36/25 , A61K36/28 , A61K36/296 , A61K36/355 , A61K36/484 , A61K36/489 , A61K36/634 , A61K36/725 , A61K36/78 , A61K36/808 , A61K2800/85 , A61Q19/00 , A61K2300/00
摘要： The present invention relates to a pharmaceutical composition and health supplement for preventing or treating atopic dermatitis, the composition and supplement having as active ingredients extract of a galenical mixture including sophora root, licorice, lonicer aflower, Korean angelica root, Korean aralia root, saussurea root, seselos radix, zizyphus spinosi, Houttuynia cordata, forsythia fruit, lappa fruit, Epimedium koreanum Nakai, ginseng, lithospermum, oleoresin, cnidium, scorophulariae radix, and reynoutria, or lactobacillus fermentation of the galenical extract prepared by inoculating lactobacillus to the galenical extract and fermenting same. The galenical extract or the galenical extract fermentation of the present invention achieves reduced scratching, decreases clinical features of atopic symptoms such as erythema, itchiness and dry skin, edema and hematoma, erosion, and lichenification, and reduces IgE concentration in blood, which is related to exogenous atopic dermatitis, in laboratory animal models of atopic dermatitis, and is thereby, useful for preventing or treating atopic dermatitis.
摘要翻译：本发明涉及用于预防或治疗特应性皮炎的药物组合物和健康补充剂，所述组合物和补充剂具有作为活性成分的包含槐根，甘草，椴树叶，韩国当归，韩国檀香根，沙司根，莴苣，枸杞子，鱼腥草，连翘果，a果，韩国淫羊藿，人参，lithospermum，油树脂，cnidium，scorophularia根和reynoutria，或乳酸杆菌发酵通过将乳杆菌接种到盖仑液提取物而制备的; 发酵相同。本发明的盖仑液提取物或盖仑液提取物发酵减少了刮擦，降低了特应性症状如红斑，瘙痒和皮肤干燥，水肿和血肿，侵蚀和苔藓样病变的临床特征，并降低血液中的IgE浓度，这是相关的对特应性皮炎的实验动物模型中的外源性特应性皮炎，因此可用于预防或治疗特应性皮炎。

4. 发明授权

US08664019B2 Vertical group III-nitride light emitting device and method for manufacturing the same 有权
标题翻译：垂直III族氮化物发光器件及其制造方法
公开(公告)号：US08664019B2
公开(公告)日：2014-03-04
申请号：US12271464
申请日：2008-11-14
申请人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
发明人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/22 , H01L33/0079 , H01L33/32
摘要： A vertical group III-nitride light emitting device and a manufacturing method thereof are provided. The light emitting device comprises: a conductive substrate; a p-type clad layer stacked on the conductive substrate; an active layer stacked on the p-type clad layer; an n-doped AlxGayIn1-x-yN layer stacked on the active layer; an undoped GaN layer stacked on the n-doped layer; and an n-electrode formed on the undoped GaN layer. The undoped GaN layer has a rough pattern formed on a top surface thereof.
摘要翻译：提供了垂直III族氮化物发光器件及其制造方法。发光器件包括：导电衬底; 层叠在导电性基板上的p型覆层; 堆叠在p型覆盖层上的有源层; 层叠在有源层上的n掺杂Al x Ga y In 1-x-y N层; 堆叠在n掺杂层上的未掺杂的GaN层; 以及形成在未掺杂的GaN层上的n电极。未掺杂的GaN层在其顶表面上形成粗糙图案。

5. 发明授权

US08320144B2 Power factor correction circuit for reducing distortion of input current 有权
标题翻译：用于减少输入电流失真的功率因数校正电路
公开(公告)号：US08320144B2
公开(公告)日：2012-11-27
申请号：US12674618
申请日：2008-08-22
申请人： Jae Hoon Lee
发明人： Jae Hoon Lee
IPC分类号： H02M7/757 , H02M7/758
CPC分类号： G05F1/70
摘要： The present invention relates to a power factor correction circuit that can reduce distortion of input current in a switching mode power supply. The power factor correction circuit provided in the present invention basically comprises a first inductor which is electrically connected at a first end thereof to an input terminal, a second coil that is coupled to the first inductor to form an induced voltage, a switch electrically connected to the a second terminal of the first inductor, and a switching control unit for controlling turn-on and turn-off of the switch. In such a power factor correction circuit of the present invention, the switching control unit is configured to differently set a turn-on period of the switch depending on the input voltage by generating a signal for controlling the turn-off of the switch using a second coil voltage induced at the secondary coil of the inductor by input voltage or a directly sensed input voltage. Accordingly, distortion of input current can be effectively corrected.
摘要翻译：本发明涉及能够减少开关模式电源中的输入电流的失真的功率因数校正电路。本发明提供的功率因数校正电路基本上包括：第一电感器，其第一端电连接到输入端子;第二线圈，其耦合到第一电感器以形成感应电压;开关，电连接到第一电感器的第二端子和用于控制开关的接通和断开的开关控制单元。在本发明的这种功率因数校正电路中，开关控制单元被配置为根据输入电压不同地设置开关的导通周期，通过产生用于控制开关的关断的信号，使用第二通过输入电压或直接感应的输入电压在电感的次级线圈感应的线圈电压。因此，可以有效地校正输入电流的失真。

6. 发明授权

US07934377B2 Apparatus for easing impact on boom of excavator and method of controlling the same 有权
标题翻译：减轻对挖掘机吊臂影响的装置及其控制方法
公开(公告)号：US07934377B2
公开(公告)日：2011-05-03
申请号：US11977650
申请日：2007-10-25
申请人： Dong Soo Kim , Jae Hoon Lee , Chun Seung Lee , Jae Hong Kim , Joong Seon Joh , Eun Tae Jeung
发明人： Dong Soo Kim , Jae Hoon Lee , Chun Seung Lee , Jae Hong Kim , Joong Seon Joh , Eun Tae Jeung
IPC分类号： F16D31/02
CPC分类号： E02F9/2207 , E02F9/2285 , E02F9/2292 , F15B21/008 , F15B21/087 , F15B2211/20538 , F15B2211/20592 , F15B2211/3144 , F15B2211/329 , F15B2211/36 , F15B2211/6054 , F15B2211/6313 , F15B2211/6316 , F15B2211/6346 , F15B2211/7053 , F15B2211/8616
摘要： An apparatus for easing an impact on a boom of an excavator and a method of controlling the same are disclosed, which can minimize the vibration occurring in the boom due to the impact on a boom cylinder by actively controlling an amount of hydraulic fluid being supplied to the boom cylinder when the operation of the boom cylinder is suddenly stopped due to an operator's sudden manipulation of an operation lever for a working device. The apparatus includes first and second hydraulic pumps; a boom cylinder; a main control valve; an operation lever for supplying pilot signal pressure to a spool of the main control valve when an operator manipulates the operation lever; operation lever detection means for detecting boom up and boom down signal pressures according to an amount of manipulation of the operation lever; boom cylinder pressure detection means for detecting pressures generated in a large chamber and a small chamber of the boom cylinder; a controller for calculating and outputting a control signal of the main control valve if the boom cylinder has been suddenly stopped; and boom vibration preventing means for controlling the pilot signal pressure being supplied from the second hydraulic pump to the main control valve.
摘要翻译：公开了一种用于减轻对挖掘机的起重臂的冲击的装置及其控制方法，其可以通过主动地控制供给至动臂的液压流体的量来最小化由于对动臂缸的冲击而引起的动臂中产生的振动当操作者突然操作用于工作装置的操作杆时，动臂缸的操作突然停止时的动臂缸。该装置包括第一和第二液压泵; 动臂缸; 主控阀; 操作杆，用于当操作者操作操作杆时，将主控信号压力提供给主控制阀的阀芯; 操作杆检测装置，用于根据操作杆的操纵量检测吊杆上升和吊杆下降信号压力; 用于检测在动臂缸的大室和小室中产生的压力的动臂缸压力检测装置; 控制器，用于如果动臂缸突然停止则计算和输出主控制阀的控制信号; 以及用于控制从第二液压泵供给至主控制阀的先导信号压力的起重臂振动防止装置。

7. 发明申请

US20100093639A1 Transport Molecules Using Reverse Sequence HIV-TAT Polypeptides 审中-公开
标题翻译：运输分子使用反向序列HIV-TAT多肽
公开(公告)号：US20100093639A1
公开(公告)日：2010-04-15
申请号：US12520964
申请日：2007-12-12
申请人： Jacob M. Waugh , Jae Hoon Lee
发明人： Jacob M. Waugh , Jae Hoon Lee
IPC分类号： A61K38/08 , C07K7/06 , C12N9/00 , A61P37/02
CPC分类号： A61K47/645
摘要： This invention relates to novel transport molecules that comprise a polypeptide comprising amino acid residues arranged in a sequence that is the reverse-sequence of basic portion of the HIV-TAT protein. The novel transport polypeptides are useful for transmembrane or intracellular delivery of cargo molecules, non-limiting examples of which include polypeptides and nucleic acids. The novel transport polypeptides may be covalently or non-covalenty bound to the cargo molecules.
摘要翻译：本发明涉及包含多肽的新型转运分子，所述多肽包含以与HIV-TAT蛋白质的基本部分相反的序列排列的氨基酸残基。新型转运多肽可用于货物分子的跨膜或细胞内递送，其非限制性实例包括多肽和核酸。新型转运多肽可以与货物分子共价或非共价结合。

8. 发明申请

US20100036158A1 NOVEL PROCESS FOR PREPARING 3-AMINO-5-FLUORO-4-DIALKOXYPENTANOIC ACID ESTER 失效
标题翻译：制备3-氨基-5-氟-4-二羟基戊酸酯的新方法
公开(公告)号：US20100036158A1
公开(公告)日：2010-02-11
申请号：US12376424
申请日：2007-08-09
申请人： Hyun Ik Shin , Hyeong Wook Choi , Jae Hoon Lee , Kyu Woong Lee
发明人： Hyun Ik Shin , Hyeong Wook Choi , Jae Hoon Lee , Kyu Woong Lee
IPC分类号： C07C229/30
CPC分类号： C07C227/08 , C07C41/50 , C07C59/255 , C07C67/343 , C07C229/22 , Y02P20/55 , C07C69/734 , C07C43/313
摘要： The present invention relates to a novel process for the production of 3-amino-5-fluoro-4-dialkoxypentanoic acid ester used in the precursor of 3-amino-5-fluoro-4-oxopentanoic acid, represented by the following formula (1): wherein R1 and R2 are as defined in the Description.
摘要翻译：本发明涉及用于制备3-氨基-5-氟-4-氧代戊酸的3-氨基-5-氟-4-二烷氧基戊酸的新方法，由下式（1 ）：其中R1和R2如说明书中所定义。

9. 发明授权

US07485482B2 Method for manufacturing vertical group III-nitride light emitting device 有权
标题翻译：垂直III族氮化物发光器件的制造方法
公开(公告)号：US07485482B2
公开(公告)日：2009-02-03
申请号：US11401329
申请日：2006-04-11
申请人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
发明人： Jae Hoon Lee , Yong Chun Kim , Hyung Ky Back , Moon Heon Kong , Dong Woo Kim
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/007 , H01L33/20 , H01L33/405 , H01L2933/0083
摘要： The invention provides a vertical group III-nitride light emitting device improved in external extraction efficiency and a method for manufacturing the same. The method includes forming an undoped GaN layer and an insulating layer on a basic substrate. Then, the insulating layer is selectively etched to form an insulating pattern, and an n-doped AlxGayIn(1-x-y)N layer, an active layer and a p-doped AlmGanIn(1-m-n)N layer are sequentially formed on the insulating pattern. A conductive substrate is formed on the p-doped AlmGanIn(1-m-n)N layer. The basic substrate, the undoped gaN layer and the insulating pattern are removed, and an n-electrode is formed on a part of the exposed surface of the n-doped AlxGayIn(1-x-y)N layer.
摘要翻译：本发明提供一种提高外部提取效率的垂直III族氮化物发光器件及其制造方法。该方法包括在碱性衬底上形成未掺杂的GaN层和绝缘层。然后，选择性地蚀刻绝缘层以形成绝缘图案，并且在绝缘层上依次形成n掺杂的Al x Ga y In 1（1-xy）N层，有源层和p掺杂的AlmGanIn（1-m）N层模式。在p掺杂的AlmGanIn（1-m-n）N层上形成导电性基板。去除基本衬底，未掺杂的GaN层和绝缘图案，并且在n掺杂Al x Ga y In（1-x-y）N层的暴露表面的一部分上形成n电极。

10. 发明授权

US07442569B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07442569B2
公开(公告)日：2008-10-28
申请号：US11878503
申请日：2007-07-25
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L21/00 , H01L29/22
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极。在n电极下形成AlGaN层。在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。在GaN基LED结构下方形成p电极。导电性基板形成在p电极的下方。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式