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1. 发明授权

US07479661B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07479661B2
公开(公告)日：2009-01-20
申请号：US11435751
申请日：2006-05-18
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/32
摘要： The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0
摘要翻译：本发明提供一种氮化物半导体器件及其制造方法。在本发明中，在衬底上形成n型和p型氮化物半导体层，并且在它们之间形成有源层。 n型氮化物半导体层包括以距离有源层的距离的顺序设置的第一和第二n型GaN层。此外，在本发明的氮化物半导体器件中，在第一和第二n型GaN层之间插入有0

2. 发明申请

US20070290225A1 Method of manufacturing a vertically-structured GaN-based light emitting diode 有权
标题翻译：制造垂直结构的GaN基发光二极管的方法
公开(公告)号：US20070290225A1
公开(公告)日：2007-12-20
申请号：US11892445
申请日：2007-08-23
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
摘要翻译：本发明涉及一种垂直构造的GaN基发光二极管的制造方法。制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

3. 发明授权

US07306964B2 Method of manufacturing a vertically-structured GaN-based light emitting diode 有权
公开(公告)号：US07306964B2
公开(公告)日：2007-12-11
申请号：US11430990
申请日：2006-05-10
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.

4. 发明授权

US08686450B2 Method of manufacturing a vertically-structured GaN-based light emitting diode 有权
标题翻译：制造垂直结构的GaN基发光二极管的方法
公开(公告)号：US08686450B2
公开(公告)日：2014-04-01
申请号：US11892445
申请日：2007-08-23
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： The present invention relates to a method of manufacturing a vertically-structured GaN-based light emitting diode. The method of manufacturing a vertically-structured GaN-based light emitting diode includes forming a GaN layer on a substrate; patterning the compound layer in a predetermined shape; forming an n-type GaN layer on the patterned compound layer through the epitaxial lateral over-growth process and sequentially forming an active layer and a p-type GaN layer on the n-type GaN layer; forming a structure supporting layer on the p-type GaN layer; sequentially removing the substrate and the GaN layer formed on the substrate after forming the structure supporting layer; removing the patterned compound layer exposed after removing the GaN layer so as to form an n-type GaN layer patterned in a concave shape; and forming an n-type electrode on the n-type GaN layer patterned in a concave shape.
摘要翻译：本发明涉及一种垂直构造的GaN基发光二极管的制造方法。制造垂直结构的GaN基发光二极管的方法包括在衬底上形成GaN层; 将化合物层图案化成预定的形状; 通过外延横向过度生长工艺在图案化的化合物层上形成n型GaN层，并在n型GaN层上依次形成有源层和p型GaN层; 在p型GaN层上形成结构支撑层; 在形成结构支撑层之后，依次去除衬底和形成在衬底上的GaN层; 去除在去除GaN层之后暴露的图案化合物层，以形成图案化为凹形的n型GaN层; 在形成凹形的n型GaN层上形成n型电极。

5. 发明授权

US07442569B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07442569B2
公开(公告)日：2008-10-28
申请号：US11878503
申请日：2007-07-25
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L21/00 , H01L29/22
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极。在n电极下形成AlGaN层。在AlGaN层下形成未掺杂的GaN层，以向AlGaN层的结界面提供二维电子气层。 GaN基LED结构包括依次形成在未掺杂的GaN层下面的n型GaN层，有源层和p型GaN层。在GaN基LED结构下方形成p电极。导电性基板形成在p电极的下方。

6. 发明授权

US07259399B2 Vertical GaN-based LED and method of manufacturing the same 有权
公开(公告)号：US07259399B2
公开(公告)日：2007-08-21
申请号：US11490231
申请日：2006-07-21
申请人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L29/22 , H01L29/24
CPC分类号： H01L33/14 , H01L33/0079 , H01L33/16 , H01L33/32
摘要： Provided are a vertical GaN-based LED and a method of manufacturing the same. The vertical GaN-based LED includes an n-electrode. An AlGaN layer is formed under the n-electrode. An undoped GaN layer is formed under the AlGaN layer to provide a two-dimensional electron gas layer to a junction interface of the AlGaN layer. A GaN-based LED structure includes an n-type GaN layer, an active layer, and a p-type GaN layer that are sequentially formed under the undoped GaN layer. A p-electrode is formed under the GaN-based LED structure. A conductive substrate is formed under the p-electrode.

7. 发明授权

US07436001B2 Vertical GaN-based LED and method of manufacturing the same 有权
标题翻译：垂直GaN基LED及其制造方法
公开(公告)号：US07436001B2
公开(公告)日：2008-10-14
申请号：US11490254
申请日：2006-07-21
申请人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
发明人： Jae Hoon Lee , Bang Won Oh , Hee Seok Choi , Jeong Tak Oh , Seok Beom Choi , Su Yeol Lee
IPC分类号： H01L27/15
CPC分类号： H01L33/22 , H01L33/14
摘要： A vertical GaN-based LED and a method of manufacturing the same are provided. The vertical GaN-based LED includes an n-electrode, a first n-type GaN layer, a first AlGaN layer, a GaN layer, a second AlGaN layer, a second n-type GaN layer, an active layer, a p-type GaN layer, and a structure support layer. The first n-type GaN layer has uneven patterns having a plurality of protuberances. The first AlGaN layer is formed under the first n-type GaN layer, and the GaN layer is formed under the first AlGaN layer. The active layer is formed under the second n-type GaN layer, and the p-type GaN layer is formed under the active layer. A p-electrode is formed under the p-type GaN layer, and the structure support layer is formed under the p-electrode.
摘要翻译：提供了一种垂直GaN基LED及其制造方法。垂直GaN基LED包括n电极，第一n型GaN层，第一AlGaN层，GaN层，第二AlGaN层，第二n型GaN层，有源层，p型 GaN层和结构支撑层。第一n型GaN层具有具有多个突起的不均匀图案。第一AlGaN层形成在第一n型GaN层下方，并且GaN层形成在第一AlGaN层的下方。有源层形成在第二n型GaN层下面，p型GaN层形成在有源层下面。在p型GaN层的下方形成有p电极，在p电极的下方形成有结构支撑层。

8. 发明申请

US20070267640A1 Semiconductor light emitting diode and method of manufacturing the same 审中-公开
标题翻译：半导体发光二极管及其制造方法
公开(公告)号：US20070267640A1
公开(公告)日：2007-11-22
申请号：US11436651
申请日：2006-05-19
申请人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
发明人： Jae Hoon Lee , Hee Seok Choi , Seok Beom Choi , Jeong Tak Oh , Su Yeol Lee
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/22 , H01L33/32 , H01L33/42 , H01L2933/0083
摘要： The present invention relates to a semiconductor light emitting diode. The semiconductor light emitting diode includes a substrate; an n-type nitride semiconductor layer that is formed on the substrate; an active layer that is formed on the n-type nitride semiconductor layer; a p-type nitride semiconductor layer that is formed on the active layer; a first undoped GaN layer that is formed on the p-type nitride semiconductor layer; an AlGaN layer that is formed on the first undoped GaN layer so as to provide a two-dimensional electron gas layer to the interface with the first undoped GaN layer; a second undoped GaN layer that is formed on the AlGaN layer and has irregularities such that the light generated in the active layer is not internally reflected toward the active layer; a p-type transparent electrode that is formed on the second undoped GaN layer; and an n-type electrode and p-type electrode that are formed to be respectively connected onto the n-type nitride semiconductor layer and the p-type transparent electrode.
摘要翻译：本发明涉及一种半导体发光二极管。半导体发光二极管包括基板; 形成在所述基板上的n型氮化物半导体层; 形成在n型氮化物半导体层上的有源层; 形成在有源层上的p型氮化物半导体层; 在p型氮化物半导体层上形成的第一未掺杂GaN层; AlGaN层，形成在第一未掺杂的GaN层上，以便向与第一未掺杂GaN层的界面提供二维电子气层; 第二未掺杂的GaN层，其形成在AlGaN层上并且具有凹凸，使得在有源层中产生的光不向有源层内部反射; 形成在第二未掺杂GaN层上的p型透明电极; 以及形成为分别连接在n型氮化物半导体层和p型透明电极上的n型电极和p型电极。

9. 发明授权

US08299474B2 Light emitting device package and light unit having the same 有权
标题翻译：发光器件封装和具有相同功能的发光器件
公开(公告)号：US08299474B2
公开(公告)日：2012-10-30
申请号：US13341680
申请日：2011-12-30
申请人： Sung Min Kong , Choong Youl Kim , Hee Seok Choi
发明人： Sung Min Kong , Choong Youl Kim , Hee Seok Choi
IPC分类号： H01L27/15 , H01L29/267 , H01L31/12 , H01L33/00
CPC分类号： H01L33/60 , H01L33/30 , H01L33/32 , H01L33/486 , H01L33/54 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： Disclosed is an LED package. The LED package includes a package body, a semiconductor light emitting device on the package body and at least one of frames on the package body. At least one of the frames includes a bottom frame on the package body, and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame.
摘要翻译：公开了一种LED封装。 LED封装包括封装主体，封装主体上的半导体发光器件和封装主体上的至少一个框架。至少一个框架包括在封装主体上的底部框架，以及至少两个从底部框架延伸并相对于底部框架倾斜的侧壁框架。

10. 发明申请

US20120299038A1 LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS 有权
标题翻译：发光装置和发光装置
公开(公告)号：US20120299038A1
公开(公告)日：2012-11-29
申请号：US13293858
申请日：2011-11-10
申请人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
发明人： Deok Ki Hwang , Young Ju Han , Hee Seok Choi , Ju Won Lee , Pil Geun Kang , Seok Beom Choi
IPC分类号： H01L33/36
CPC分类号： H01L33/62 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/385 , H01L33/405 , H01L33/44 , H01L33/46 , H01L33/483 , H01L33/505 , H01L33/507 , H01L33/641 , H01L2224/16
摘要： A light emitting device may be provided that includes a substrate, a light emitting structure, a first electrode under the first semiconductor layer, a reflective electrode layer under the second conductive semiconductor layer, a second electrode under the reflective electrode layer, and a support member under the first semiconductor layer and the reflective electrode layer around the first and second electrodes. A first connection electrode may be provided under the first electrode. At least a part of the first connection electrode is provided in the support member. A second connection electrode may be provided under the second electrode At least a part of the second connection electrode may be provided in the support member.
摘要翻译：可以提供一种发光器件，其包括衬底，发光结构，第一半导体层下的第一电极，第二导电半导体层下的反射电极层，反射电极层下的第二电极和支撑构件在第一半导体层和第一和第二电极周围的反射电极层之下。可以在第一电极下方设置第一连接电极。第一连接电极的至少一部分设置在支撑构件中。第二连接电极可以设置在第二电极下方第二连接电极的至少一部分可以设置在支撑构件中。

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