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1. 发明授权

US08815688B2 Method of manufacturing power device 有权
标题翻译：功率器件制造方法
公开(公告)号：US08815688B2
公开(公告)日：2014-08-26
申请号：US13550920
申请日：2012-07-17
申请人： Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
发明人： Jae Hoon Lee , Ki Se Kim , Jung Hee Lee , Ki Sik Im , Dong Seok Kim
IPC分类号： H01L29/778
CPC分类号： H01L29/7813 , H01L29/0634 , H01L29/0878 , H01L29/2003
摘要： A method of manufacturing a power device includes forming a first drift region on a substrate. A trench is formed by patterning the first drift region. A second drift region is formed by growing n-gallium nitride (GaN) in the trench, and alternately disposing the first drift region and the second drift region. A source electrode contact layer is formed on the second drift region. A source electrode and a gate electrode are formed on the source electrode contact layer. A drain electrode is formed on one side of the substrate which is an opposite side of the first drift region.
摘要翻译：制造功率器件的方法包括在衬底上形成第一漂移区。通过图案化第一漂移区域形成沟槽。通过在沟槽中生长氮化镓（GaN）并且交替地设置第一漂移区和第二漂移区，形成第二漂移区。源电极接触层形成在第二漂移区上。在源电极接触层上形成源电极和栅电极。在基板的与第一漂移区域相反的一侧上形成漏电极。

2. 发明授权

US08518779B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08518779B2
公开(公告)日：2013-08-27
申请号：US13532170
申请日：2012-06-25
申请人： Jin-Yul Lee , Dong-Seok Kim
发明人： Jin-Yul Lee , Dong-Seok Kim
IPC分类号： H01L21/336
CPC分类号： H01L29/78 , H01L29/1037 , H01L29/66621
摘要： A semiconductor device includes a step-type recess pattern formed in a substrate, a gate electrode buried in the recess pattern and having a gap disposed between the gate electrode and upper sidewalls of the recess pattern, an insulation layer filling the gap, and a source and drain region formed in a portion of the substrate at two sides of the recess pattern. The semiconductor device is able to secure a required data retention time by suppressing the increase of leakage current caused by the reduction of a design rule.
摘要翻译：半导体器件包括形成在衬底中的阶梯型凹槽图形，埋入凹槽图案中的栅电极，并且具有设置在凹槽图案的栅极电极和上侧壁之间的间隙，填充间隙的绝缘层和源极以及在凹部图案的两侧形成在基板的一部分中的漏极区域。半导体器件能够通过抑制由于设计规则的减少引起的漏电流的增加来确保所需的数据保持时间。

3. 发明授权

US08498337B2 Method for decoding and encoding a video signal 有权
标题翻译：视频信号的解码和编码方法
公开(公告)号：US08498337B2
公开(公告)日：2013-07-30
申请号：US12926099
申请日：2010-10-26
申请人： Seung Wook Park , Byeong Moon Jeon , Dong Seok Kim , Ji Ho Park
发明人： Seung Wook Park , Byeong Moon Jeon , Dong Seok Kim , Ji Ho Park
IPC分类号： H04N7/32
CPC分类号： H04N19/33 , H04N19/103 , H04N19/105 , H04N19/159 , H04N19/176 , H04N19/187 , H04N19/61 , H04N19/82
摘要： In one embodiment, the method for decoding a video signal using inter layer prediction includes obtaining a residual signal of a corresponding block in a base layer from a base layer bitstream, scaling the residual signal of the corresponding block in the base layer, obtaining a residual signal of a current block in an enhanced layer from an enhanced layer bitstream, obtaining a prediction pixel value of the current block in the enhanced layer based on an intra prediction mode of the corresponding block in the base layer and a pixel value of a neighboring block in the enhanced layer, and reconstructing the current block by using the prediction pixel value of the current block, the residual signal of the current block.
摘要翻译：在一个实施例中，使用层间预测对视频信号进行解码的方法包括从基本层比特流获得基本层中的对应块的残差信号，对基本层中的相应块的残差信号进行缩放，获得残差来自增强层比特流的增强层中的当前块的信号，基于所述基本层中的相应块的帧内预测模式和相邻块的像素值获得所述增强层中的当前块的预测像素值在增强层中，并通过使用当前块的预测像素值来重建当前块，即当前块的残差信号。

4. 发明申请

US20120308741A1 TRANSPARENT, HIGHLY HEAT-RESISTANT POLYIMIDE PRECURSOR AND PHOTOSENSITIVE POLYIMIDE COMPOSITION THEREOF 有权
标题翻译：透明，高耐热聚酰亚胺前体及其感光性聚酰亚胺组合物
公开(公告)号：US20120308741A1
公开(公告)日：2012-12-06
申请号：US13484002
申请日：2012-05-30
申请人： Dong-Seok KIM , Yong-sik Ahn , Kyung-jun Kim , Mi-hie Yi
发明人： Dong-Seok KIM , Yong-sik Ahn , Kyung-jun Kim , Mi-hie Yi
IPC分类号： C08L77/10 , C09D177/10 , C09K19/52 , C08G69/28
CPC分类号： C08G69/26 , C08G73/10 , C08G73/1007 , G03F7/037 , G03F7/0387 , Y10T428/10
摘要： The present invention relates to an aqueous alkali-developable photosensitive polyimide precursor resin composition that is appropriate for highly heat-resistant transparent protection layers and insulation layers for liquid crystal display devices.
摘要翻译：本发明涉及适用于高耐热性透明保护层和液晶显示装置用绝缘层的碱性显影用感光性聚酰亚胺前体树脂组合物。

5. 发明授权

US08227859B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08227859B2
公开(公告)日：2012-07-24
申请号：US12492607
申请日：2009-06-26
申请人： Jin-Yul Lee , Dong-Seok Kim
发明人： Jin-Yul Lee , Dong-Seok Kim
IPC分类号： H01L29/78
CPC分类号： H01L29/78 , H01L29/1037 , H01L29/66621
摘要： A semiconductor device includes a step-type recess pattern formed in a substrate, a gate electrode buried in the recess pattern and having a gap disposed between the gate electrode and upper sidewalls of the recess pattern, an insulation layer filling the gap, and a source and drain region formed in a portion of the substrate at two sides of the recess pattern. The semiconductor device is able to secure a required data retention time by suppressing the increase of leakage current caused by the reduction of a design rule.
摘要翻译：半导体器件包括形成在衬底中的阶梯型凹槽图形，埋入凹槽图案中的栅电极，并且具有设置在凹槽图案的栅极电极和上侧壁之间的间隙，填充间隙的绝缘层和源极以及在凹部图案的两侧形成在基板的一部分中的漏极区域。半导体器件能够通过抑制由于设计规则的减少引起的漏电流的增加来确保所需的数据保持时间。

6. 发明申请

US20110062970A1 Rotating Angle Detection Device Used Capacitive Change and Method Thereof 审中-公开
标题翻译：使用的旋转角度检测装置的电容变化及其方法
公开(公告)号：US20110062970A1
公开(公告)日：2011-03-17
申请号：US12991323
申请日：2008-05-08
申请人： Mi Kyung Kim , Rae Duk Lee , Dong Seok Kim
发明人： Mi Kyung Kim , Rae Duk Lee , Dong Seok Kim
IPC分类号： G01R27/26
CPC分类号： G01D5/2412
摘要： This invention can increase the resolving power of the rotating angle using the rate of capacity change between two objects. The objective is to provide a rotating angle detecting device using capacitive change that is small in size and costs low to manufacture. The method to reach the above objective is a rotating angle detection device with a stator with two fixed conductor plates; and a rotator with a rotating conductor plate that rotates relatively to the above stator, with every rotation overlapping and passing the above fixed conductor plates repeatedly with different area change.
摘要翻译：本发明可以使用两个物体之间的容量变化率来提高旋转角度的分辨率。目的是提供使用电容变化的旋转角度检测装置，其尺寸小，制造成本低。达到上述目的的方法是具有带有两个固定导体板的定子的旋转角度检测装置; 以及具有相对于上述定子旋转的旋转导体板的转子，每次旋转重叠并且以不同的面积变化反复地通过上述固定导体板。

7. 外观设计

USD634352S1 Combined lens case and auto lens cleaner 有权
标题翻译：组合镜头盒和汽车镜头清洁剂
公开(公告)号：USD634352S1
公开(公告)日：2011-03-15
申请号：US29366943
申请日：2010-08-02
申请人： Dong Seok Kim
设计人： Dong Seok Kim

8. 发明申请

US20100246674A1 Method for Decoding and Encoding a Video Signal 审中-公开
标题翻译：视频信号的解码和编码方法
公开(公告)号：US20100246674A1
公开(公告)日：2010-09-30
申请号：US11992763
申请日：2006-10-09
申请人： Seung Wook Park , Byeong Moon Jeon , Dong Seok Kim , Ji Ho Park
发明人： Seung Wook Park , Byeong Moon Jeon , Dong Seok Kim , Ji Ho Park
IPC分类号： H04N7/12
CPC分类号： H04N19/59 , H04N19/103 , H04N19/105 , H04N19/11 , H04N19/159 , H04N19/176 , H04N19/187 , H04N19/30 , H04N19/61 , H04N19/82
摘要： A method for decoding/encoding a video signal using an inter-layer prediction process is disclosed. The method for decoding a video signal including several layer information includes: a) acquiring a first prediction signal for a current block of an enhancement layer and a residual signal based on at least a base layer block; b) smoothing the sum of the first prediction signal and the residual signal, and generating a second prediction signal for the current block; and c) reconstructing the current block based on the second prediction signal, wherein the step a) for generating the first prediction signal is based on prediction mode information of at least the current block. Therefore, the method for decoding/encoding a video signal uses a variety of inter layer prediction methods according to the macroblock types of macroblocks of the current and base layers, and removes inter layer redundancy, resulting in increased coding efficiency.
摘要翻译：公开了一种使用层间预测处理对视频信号进行解码/编码的方法。用于解码包括若干层信息的视频信号的方法包括：a）基于至少一个基本层块获取增强层的当前块和剩余信号的第一预测信号; b）平滑第一预测信号和残差信号的和，并产生当前块的第二预测信号; 以及c）基于所述第二预测信号重新构建所述当前块，其中用于生成所述第一预测信号的步骤a）基于至少所述当前块的预测模式信息。因此，视频信号的解码/编码方法根据当前和基层的宏块的宏块类型使用各种层间预测方法，并且消除层间冗余，从而提高编码效率。

9. 发明授权

US07773675B2 Method for decoding a video signal using a quality base reference picture 有权
标题翻译：使用质量基准参考图像对视频信号进行解码的方法
公开(公告)号：US07773675B2
公开(公告)日：2010-08-10
申请号：US11992956
申请日：2006-10-02
申请人： Seung Wook Park , Byeong Moon Jeon , Soung Hyun Um , Ji Ho Park , Dong Seok Kim
发明人： Seung Wook Park , Byeong Moon Jeon , Soung Hyun Um , Ji Ho Park , Dong Seok Kim
IPC分类号： H04N7/26
CPC分类号： H04N19/34 , H04N5/145 , H04N19/105 , H04N19/176 , H04N19/187 , H04N19/29 , H04N19/44 , H04N19/46 , H04N19/51 , H04N19/52 , H04N19/523 , H04N19/56 , H04N19/577 , H04N19/70
摘要： A method for efficiently decoding a video signal is disclosed. The method for decoding a video signal based on fine granularity scalability (FGS) includes obtaining a first reference picture from a reference picture list, decoding a current block using the first reference picture, wherein the first reference picture and a second reference picture corresponding thereto have the same picture identification information and are distinguished from each other by another identification information. Accordingly, it is possible to minimize a problem caused in a procedure for decoding a video signal due to transmission error.
摘要翻译：公开了一种高效解码视频信号的方法。基于细粒度可伸缩性（FGS）对视频信号进行解码的方法包括从参考图像列表获得第一参考图像，使用第一参考图片对当前块进行解码，其中第一参考图片和与其对应的第二参考图片具有相同的图像识别信息，并通过另一识别信息彼此区分。因此，可以最小化由于传输错误而对视频信号进行解码的过程中引起的问题。

10. 发明申请

US20100163976A1 Semiconductor Device Having Saddle Fin Transistor and Method for Fabricating the Same 有权
标题翻译：具有鞍鳍晶体管的半导体器件及其制造方法
公开(公告)号：US20100163976A1
公开(公告)日：2010-07-01
申请号：US12494567
申请日：2009-06-30
申请人： Jin Yul LEE , Dong Seok KIM
发明人： Jin Yul LEE , Dong Seok KIM
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/66484 , H01L27/10876 , H01L27/10879 , H01L27/10894 , H01L29/66795 , H01L29/785
摘要： A method for fabricating a semiconductor device includes forming a pad nitride layer that exposes an isolation region over a cell region of a semiconductor substrate; forming a trench in the isolation region of the semiconductor substrate; forming an isolation layer within the trench; etching an active region of the semiconductor substrate by a certain depth to form a recessed isolation region; etching the isolation layer by a certain depth to form a recessed isolation region; depositing a gate metal layer in the recessed active region and the recessed isolation region to form a gate of a cell transistor; forming an insulation layer over an upper portion of the gate; removing the pad nitride layer to expose a region of the semiconductor substrate to be formed with a contact plug; and depositing a conductive layer in the region of the semiconductor substrate to form a contact plug.
摘要翻译：一种制造半导体器件的方法包括形成在半导体衬底的单元区域上暴露隔离区的衬垫氮化物层; 在所述半导体衬底的隔离区域中形成沟槽; 在沟槽内形成隔离层; 蚀刻半导体衬底的有源区一定深度以形成凹入的隔离区; 将隔离层蚀刻一定深度以形成凹入的隔离区域; 在凹入的有源区和凹入的隔离区中沉积栅极金属层以形成单元晶体管的栅极; 在所述浇口的上部上形成绝缘层; 去除衬垫氮化物层以暴露要形成有接触插塞的半导体衬底的区域; 以及在所述半导体衬底的区域中沉积导电层以形成接触插塞。

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