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1. 发明授权

US06858471B1 Semiconductor substrate with trenches for reducing substrate resistance 失效
标题翻译：具有沟槽的半导体衬底，用于降低衬底电阻
公开(公告)号：US06858471B1
公开(公告)日：2005-02-22
申请号：US10247906
申请日：2002-09-20
申请人： Jacek Korec , Robert Q. Xu , Mohammed Kasem
发明人： Jacek Korec , Robert Q. Xu , Mohammed Kasem
IPC分类号： H01L21/44 , H01L29/06 , H01L29/45 , H01L29/739 , H01L29/78
CPC分类号： H01L29/456 , H01L24/32 , H01L29/0657 , H01L29/7395 , H01L29/7802 , H01L29/7813 , H01L2924/10155 , H01L2924/1305 , H01L2924/13055 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： In one embodiment of the present invention, a method for fabricating semiconductor devices comprises forming an active region about a front-side of a substrate. A plurality of trenches are then formed about a back-side of the substrate. A grid of banks separates the trenches. A conductive material is then applied to the back-side of the substrate. The trenches and the conductive material act to reduce the on-state resistance of the substrate and enhance thermal conductivity, while the grid of banks maintains the structural strength of the wafer.
摘要翻译：在本发明的一个实施例中，一种用于制造半导体器件的方法包括在基片的前侧形成有源区。然后围绕衬底的背面形成多个沟槽。银行网格分隔了沟渠。然后将导电材料施加到基板的背面。沟槽和导电材料用于降低衬底的导通电阻并提高热导率，而银栅格保持晶片的结构强度。

2. 发明授权

US08324711B2 Precision high-frequency capacitor formed on semiconductor substrate 有权
标题翻译：精密高频电容器形成于半导体基板上
公开(公告)号：US08324711B2
公开(公告)日：2012-12-04
申请号：US13075752
申请日：2011-03-30
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L21/02
CPC分类号： H01G4/33 , H01G4/38 , H01L23/481 , H01L28/40 , H01L29/66181 , H01L29/945 , H01L2224/0401 , H01L2224/05 , H01L2224/13025 , H01L2224/131 , H01L2924/13091 , Y10S438/957 , H01L2924/014 , H01L2924/00
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.
摘要翻译：精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。半导体衬底是重掺杂的，因此具有低电阻率。与第一电极绝缘的第二电极也形成在前侧表面上。在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

3. 发明授权

US06392290B1 Vertical structure for semiconductor wafer-level chip scale packages 有权
标题翻译：半导体晶圆级芯片级封装的垂直结构
公开(公告)号：US06392290B1
公开(公告)日：2002-05-21
申请号：US09545287
申请日：2000-04-07
申请人： Y. Mohammed Kasem , Yueh-Se Ho , Lee Shawn Luo , Chang-Sheng Chen , Eddy Tjhia , Bosco Lan , Jacek Korec , Anup Bhalla
发明人： Y. Mohammed Kasem , Yueh-Se Ho , Lee Shawn Luo , Chang-Sheng Chen , Eddy Tjhia , Bosco Lan , Jacek Korec , Anup Bhalla
IPC分类号： H01L2302
CPC分类号： H01L23/4824 , H01L21/6835 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/03 , H01L24/05 , H01L24/06 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2221/6835 , H01L2223/5448 , H01L2224/0401 , H01L2224/05552 , H01L2224/05554 , H01L2224/0557 , H01L2224/0603 , H01L2224/11002 , H01L2224/13022 , H01L2224/13025 , H01L2224/16 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01061 , H01L2924/01073 , H01L2924/01076 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13062 , H01L2924/13091 , H01L2924/14 , H01L2924/19041 , H01L2924/19043 , H01L2924/00
摘要： In a semiconductor package for a chip having terminals on both sides, for example, a power MOSFET in which the gate and source terminals are on the front side and the drain terminal is on the back side, electrical contact is made with the back side terminal by extending vias, which can take the form of trenches, holes or other cavities, either entirely or patrially through the chip. The vias are filled with a metal or other electrically conductive material. The process is performed on the chips in a wafer simultaneously. The resulting package is compact and economical to manufacture and can readily be mounted, flip-chip style, on a printed circuit board.
摘要翻译：在用于具有两侧端子的芯片的半导体封装中，例如，栅极和源极端子位于前侧的功率MOSFET，漏极端子位于背面侧，与背面侧端子通过延伸通孔，其可以采取沟槽，孔或其它空腔的形式，完全或亲切地穿过芯片。通孔填充有金属或其它导电材料。该过程同时在晶片上的芯片上进行。所得到的封装是紧凑的并且经济地制造并且可以容易地安装在倒装芯片上，在印刷电路板上。

4. 发明授权

US09136060B2 Precision high-frequency capacitor formed on semiconductor substrate 有权
标题翻译：精密高频电容器形成于半导体基板上
公开(公告)号：US09136060B2
公开(公告)日：2015-09-15
申请号：US11966965
申请日：2007-12-28
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L21/20 , H01G4/33 , H01G4/38 , H01L49/02 , H01L29/94 , H01L29/66 , H01L23/48
CPC分类号： H01G4/33 , H01G4/38 , H01L23/481 , H01L28/40 , H01L29/66181 , H01L29/945 , H01L2224/0401 , H01L2224/05 , H01L2224/13025 , H01L2224/131 , H01L2924/13091 , Y10S438/957 , H01L2924/014 , H01L2924/00
摘要： A method of fabricating a capacitor in a semiconductor substrate. The semiconductor substrate is doped to have a low resistivity. A second electrode, insulated from a first electrode, is formed over a front side surface and connected by a metal-filled via to the back side surface. The via may be omitted and the second electrode may be in electrical contact with the substrate or may be formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor is provided by a pair of oppositely-directed diodes formed in the substrate connected in parallel with the capacitor. Capacitance is increased while maintaining a low effective series resistance. Electrodes include a plurality of fingers, which are interdigitated with the fingers of other electrode. The capacitor is fabricated in a wafer-scale process with other capacitors, where capacitors are separated from each other by a dicing technique.
摘要翻译：一种在半导体衬底中制造电容器的方法。掺杂半导体衬底以具有低电阻率。与第一电极绝缘的第二电极形成在前侧表面上，并且通过金属填充的通孔连接到背侧表面。可以省略通孔，并且第二电极可以与衬底电接触，或者可以形成在介电层的顶部，从而产生一对串联电容器。电容器的ESD保护由形成在与电容器并联连接的衬底中的一对相反方向的二极管提供。电容增加同时保持低有效的串联电阻。电极包括多个指状物，其与另一个电极的指状物交叉指向。电容器采用具有其他电容器的晶片级工艺制造，其中电容器通过切割技术彼此分离。

5. 发明申请

US20110176247A1 PRECISION HIGH-FREQUENCY CAPACITOR FORMED ON SEMICONDUCTOR SUBSTRATE 有权
标题翻译：精密高频电容器在半导体衬底上形成
公开(公告)号：US20110176247A1
公开(公告)日：2011-07-21
申请号：US13075752
申请日：2011-03-30
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H02H9/00 , H01L21/20 , H01L29/92
CPC分类号： H01G4/33 , H01G4/38 , H01L23/481 , H01L28/40 , H01L29/66181 , H01L29/945 , H01L2224/0401 , H01L2224/05 , H01L2224/13025 , H01L2224/131 , H01L2924/13091 , Y10S438/957 , H01L2924/014 , H01L2924/00
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.
摘要翻译：精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。半导体衬底是重掺杂的，因此具有低电阻率。与第一电极绝缘的第二电极也形成在前侧表面上。在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

6. 发明申请

US20100295152A1 Precision high-frequency capacitor formed on semiconductor substrate 有权
标题翻译：精密高频电容器形成于半导体基板上
公开(公告)号：US20100295152A1
公开(公告)日：2010-11-25
申请号：US11601501
申请日：2006-11-16
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L29/92
CPC分类号： H01G4/33 , H01G4/38 , H01L23/481 , H01L28/40 , H01L29/66181 , H01L29/945 , H01L2224/0401 , H01L2224/05 , H01L2224/13025 , H01L2224/131 , H01L2924/13091 , Y10S438/957 , H01L2924/014 , H01L2924/00
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.
摘要翻译：精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。半导体衬底是重掺杂的，因此具有低电阻率。与第一电极绝缘的第二电极也形成在前侧表面上。在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

7. 发明授权

US08004063B2 Precision high-frequency capacitor formed on semiconductor substrate 有权
标题翻译：精密高频电容器形成于半导体基板上
公开(公告)号：US08004063B2
公开(公告)日：2011-08-23
申请号：US11601501
申请日：2006-11-16
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L29/92
CPC分类号： H01G4/33 , H01G4/38 , H01L23/481 , H01L28/40 , H01L29/66181 , H01L29/945 , H01L2224/0401 , H01L2224/05 , H01L2224/13025 , H01L2224/131 , H01L2924/13091 , Y10S438/957 , H01L2924/014 , H01L2924/00
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.
摘要翻译：精密高频电容器包括形成在半导体衬底的前侧表面上的电介质层和位于电介质层顶部的第一电极。半导体衬底是重掺杂的，因此具有低电阻率。与第一电极绝缘的第二电极也形成在前侧表面上。在一个实施例中，第二电极通过金属填充的通孔连接到衬底背面上的导电材料层。在替代实施例中，省略通孔，并且第二电极与衬底电接触或者形成在电介质层的顶部，从而产生一对串联电容器。电容器的ESD保护可以由形成在衬底中并与电容器并联连接的一对相反方向的二极管提供。为了在保持低有效串联电阻的同时增加电容器的电容，每个电极可以包括与另一个电极的指状物交叉的多个指状物。电容器优选与晶片上的许多其它电容器同时地以晶片级工艺制造，然后通过常规的切割技术将电容器彼此分离。

8. 发明授权

US07151036B1 Precision high-frequency capacitor formed on semiconductor substrate 失效
公开(公告)号：US07151036B1
公开(公告)日：2006-12-19
申请号：US10456018
申请日：2003-06-05
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L21/8242
CPC分类号： H01G4/33 , H01G4/38 , H01L23/481 , H01L28/40 , H01L29/66181 , H01L29/945 , H01L2224/0401 , H01L2224/05 , H01L2224/13025 , H01L2224/131 , H01L2924/13091 , Y10S438/957 , H01L2924/014 , H01L2924/00
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

9. 发明授权

US06621143B2 Precision high-frequency capacitor on semiconductor substrate 有权
公开(公告)号：US06621143B2
公开(公告)日：2003-09-16
申请号：US10208599
申请日：2002-07-29
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L27/0255 , H01L27/0676 , H01L27/0805 , H01L2224/05009 , H01L2224/0557 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2224/05599
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

10. 发明授权

US06621142B2 Precision high-frequency capacitor formed on semiconductor substrate 有权
公开(公告)号：US06621142B2
公开(公告)日：2003-09-16
申请号：US10208121
申请日：2002-07-29
申请人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
发明人： Haim Goldberger , Sik Lui , Jacek Korec , Y. Mohammed Kasem , Harianto Wong , Jack Van Den Heuvel
IPC分类号： H01L2900
CPC分类号： H01L28/40 , H01L27/0255 , H01L27/0676 , H01L27/0805 , H01L2224/05009 , H01L2224/0557 , H01L2224/05573 , H01L2224/13 , H01L2924/00014 , H01L2924/13091 , H01L2924/00 , H01L2224/05599
摘要： A precision high-frequency capacitor includes a dielectric layer formed on the front side surface of a semiconductor substrate and a first electrode on top of the dielectric layer. The semiconductor substrate is heavily doped and therefore has a low resistivity. A second electrode, insulated from the first electrode, is also formed over the front side surface. In one embodiment, the second electrode is connected by a metal-filled via to a layer of conductive material on the back side of the substrate. In alternative embodiments, the via is omitted and the second electrode is either in electrical contact with the substrate or is formed on top of the dielectric layer, yielding a pair of series-connected capacitors. ESD protection for the capacitor can be provided by a pair of oppositely-directed diodes formed in the substrate and connected in parallel with the capacitor. To increase the capacitance of the capacitor while maintaining a low effective series resistance, each of the electrodes may include a plurality of fingers, which are interdigitated with the fingers of the other electrode. The capacitor is preferably fabricated in a wafer-scale process concurrently with numerous other capacitors on the wafer, and the capacitors are then separated from each other by a conventional dicing technique.

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