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1. 发明专利

JP2001077044A MANUFACTURE OF SILICON CRYSTAL THIN PLATE AND MANUFACTURE OF SUBSTRATE FOR PHOTOELECTRIC CONVERSION ELEMENT 失效
公开(公告)号：JP2001077044A
公开(公告)日：2001-03-23
申请号：JP24725599
申请日：1999-09-01
申请人： JAPAN ATOMIC ENERGY RES INST , NISSIN ELECTRIC CO LTD
发明人： HANADA MASAYA , OKUMURA YOSHIKAZU , MIYAKE KOJI , HAYASHI TSUKASA , OGATA KIYOSHI
IPC分类号： H01L31/04 , H01L21/02 , H01L21/265 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To dispense with a pressing of the surface of an implanted layer during the heating process of the manufacturing method of a silicon crystal thin plate. SOLUTION: This manufacturing method of a silicon crystal thin plate is provided with an implantation process A, wherein hydrogen ions 6 are implanted in a silicon-containing silicon crystal substrate 2 to form an implanted layer 8 in the place of a depth R2 of 8 μm or deeper from the surface of the substrate 2, a heating process (B), wherein after the process (A), the substrate 2 is heated to form pores in the layer 8, and a separation process (C), wherein after the process (B), the upper side of the layer 8 formed in the substrate 2 is separated from the layer 8 to obtain a silicon crystal thin plate 16.

2. 发明专利

DE19929278A1 Negative hydrogen ion beam injection method on substrate 未知
公开(公告)号：DE19929278A1
公开(公告)日：2000-02-17
申请号：DE19929278
申请日：1999-06-25
申请人： NISSIN ELECTRIC CO LTD
发明人： MIYAKE KOJI , HAYASHI TSUKASA , KUWAHARA HAJIME
IPC分类号： H01J37/32 , H01L21/04 , H01L21/265 , H01L21/762 , H01L31/18 , H01J37/317
摘要： Silicon substrate, silicon carbide substrate and metal substrate are arranged inside the hydrogen plasma chamber and are made to contact the hydrogen plasma. During this time, a positive pulse bias voltages applied to any one of the substrate and the negative hydrogen ion in the plasma is injected into the substrate. An Independent claim is also included for the negative hydrogen ion injection apparatus.

3. 发明公开

EP1729331A4 METHOD AND APPARATUS FOR FORMING SILICON DOTS 审中-公开
标题翻译：方法和设备的形成硅点的
公开(公告)号：EP1729331A4
公开(公告)日：2008-10-15
申请号：EP05721589
申请日：2005-03-22
申请人： NISSIN ELECTRIC CO LTD
发明人： TAKAHASHI EIJI , MIKAMI TAKASHI , KISHIDA SHIGEAKI , KATO KENJI , TOMYO ATSUSHI , HAYASHI TSUKASA , OGATA KIYOSHI
IPC分类号： H01L21/203 , C23C14/14 , C23C14/34 , C23C14/54 , C23C16/24 , C23C16/50 , C23C16/509 , H01L21/205
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： A method for forming silicon dots, wherein a hydrogen gas (or and also a silane type gas) is introduced to a vacuum chamber (1), a plasma exhibiting a ratio of the luminous intensity of a silicon atom at a wave length of 288 nm to the luminous intensity of a hydrogen atom at a wave length of 484 nm of 10.0 or less is generated in the chamber, and silicon dots having a particle diameter of 20 nm or less are formed by the chemical sputtering under said plasma on a substrate.

4. 发明专利

JP2011216348A Electron source 审中-公开
标题翻译：电子源
公开(公告)号：JP2011216348A
公开(公告)日：2011-10-27
申请号：JP2010083780
申请日：2010-03-31
申请人： Nissin Electric Co Ltd , Panasonic Corp , Panasonic Electric Works Co Ltd , パナソニック株式会社 , パナソニック電工株式会社 , 日新電機株式会社
发明人： ICHIHARA TSUTOMU , HATAI TAKASHI , KOGA KEISUKE , YAMAMOTO TOSHIYOSHI , MIYATA EMI , NAGAMACHI MANABU , KATO KENJI , INAMI HIROSHI , HAYASHI TSUKASA
IPC分类号： H01J1/312
摘要： PROBLEM TO BE SOLVED: To provide an electron source improved in the electron discharge characteristics, in comparison with those of conventional ones.SOLUTION: An electron passing layer 6 is provided between a lower electrode 2 and a surface electrode 7. The electron passing layer 6 includes a first electron passing part 6a on a lower electrode 2 side; and a second electron passing part 6b on a surface electrode 7 side. The second electron passing part 6b includes multiple second grains 32a formed along the thickness direction of the lower electrode 2; a first insulating thin film 35 formed in the surface of each of the second grains 32a; multiple nanometer-order fine crystalline semiconductors 33, interposed between the second grains 32a adjacent to each other; and a second insulating thick film 34 formed in the surface of each of the fine crystalline semiconductors 33 and formed smaller in the crystal grain diameter than the fine crystalline semiconductor 33. A region 36 of the second electron passing part 6b, in which the second grains 32a are formed in the thickness direction, and the first electron passing part 6a are mutually different in the crystal orientation, and the second grain 32a is higher than the first grain in the columnar structure.
摘要翻译：要解决的问题：提供与传统电子放电特性相比改善的电子源。解决方案：在下电极2和表面电极7之间设置电子通过层6.电子通过层6 包括在下电极2侧的第一电子通过部分6a; 和表面电极7侧的第二电子通过部6b。第二电子通过部分6b包括沿下电极2的厚度方向形成的多个第二晶粒32a; 形成在每个第二晶粒32a的表面中的第一绝缘薄膜35; 介于彼此相邻的第二晶粒32a之间的多个纳米级微晶半导体33; 以及形成在每个细晶半导体33的表面中并且形成为比微晶半导体33更小的晶粒直径的第二绝缘厚膜34.第二电子通过部6b的区域36，其中第二晶粒 32a形成在厚度方向上，第一电子通过部6a在晶体取向上相互不同，第二晶粒32a比柱状结构中的第一晶粒高。

5. 发明专利

JP2009071328A Apparatus for forming silicon dots 有权
标题翻译：形成硅胶的装置
公开(公告)号：JP2009071328A
公开(公告)日：2009-04-02
申请号：JP2008310111
申请日：2008-12-04
申请人： Nissin Electric Co Ltd , 日新電機株式会社
发明人： TAKAHASHI EIJI , MIKAMI TAKASHI , KISHIDA SHIGEAKI , KATO KENJI , TOMYO ATSUSHI , HAYASHI TSUKASA , OGATA KIYOSHI
IPC分类号： H01L21/203 , C23C14/14 , C23C16/24 , H01L21/205 , H01L29/06
CPC分类号： C23C16/24 , H01L21/02381 , H01L21/02488 , H01L21/02532 , H01L21/02601 , H01L21/02631
摘要： PROBLEM TO BE SOLVED: To provide an apparatus for forming silicon dots of the same diameter at uniform density distribution directly on a substrate at a low temperature. SOLUTION: A silicon dot forming apparatus (A) includes: a chamber 1 including a holder 2 of a substrate S; a hydrogen gas supplying device 5 connected to the chamber; a silane-based gas supplying device 6 connected to the chamber; and an exhaust 7 connected to the chamber; a first high-frequency power supply which generates plasma for forming a silicon film on the inner wall of the chamber with gases supplied by the gas supplying devices 5 and 6; a second high-frequency power supply which generates plasma for performing chemical sputtering on the silicon film; and a plasma emission spectrometer 8 which determines ratio [Si (288 nm)/Hβ] of emission intensity of silicon atom at wave length of 288 nm Si (288 nm) to that of hydrogen atom at 484 nm Hβ of plasma emission in the chamber. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在低温下直接在基板上以均匀的密度分布形成相同直径的硅点的装置。＆lt; P＆gt;解决方案：一种硅点形成装置（A）包括：包括基板S的保持架2的室1; 连接到所述室的氢气供给装置5; 连接到所述室的硅烷类气体供给装置6; 以及连接到所述室的排气7; 第一高频电源，其由气体供应装置5和6供应的气体产生在室的内壁上形成硅膜的等离子体; 产生用于在硅膜上进行化学溅射的等离子体的第二高频电源; 以及等离子体发射光谱仪8，其确定在波长288nm Si（288nm）处的硅原子的发射强度与腔室中等离子体发射的484nmHβ处的氢原子的发射强度的比[Si（288nm）/Hβ] 。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JPH11354462A METHOD AND DEVICE FOR IMPLANTING NEGATIVE OXYGEN ION WITH PULSE BIAS 失效
公开(公告)号：JPH11354462A
公开(公告)日：1999-12-24
申请号：JP16346198
申请日：1998-06-11
申请人： NISSIN ELECTRIC CO LTD
发明人： MIYAKE KOJI , HAYASHI TSUKASA , KUWABARA SO
IPC分类号： H01J27/02 , H01J37/08 , H01J37/317 , H01L21/02 , H01L21/265 , H01L27/12
摘要： PROBLEM TO BE SOLVED: To limit the kind of generated oxygen ion to one kind and to eliminate the need for mass separation, by extracting negative ions from an oxygen plasma and by introducing them into an Si substrate. SOLUTION: An oxygen gas is introduced into a plasma generating chamber 30 and a trigger circuit 45 turns on a first switch 40. A high-frequency voltage is applied across an opposite electrode 32 and a susceptor electrode 31 to generate a glow discharge between the electrodes, which generates oxygen plasma. When the trigger circuit 45 is turned off, the first switch 40 is turned off to destroy the plasma, and an electron loses energy instantly and becomes a low energy level of several eV. This electron with low energy is dissociated and attached to an oxygen molecule to generate a negative oxygen ion. Therefore, the density of the negative oxygen ions starts to increase abruptly just after the trigger circuit 45 is turned off. The negative oxygen ions are generated with higher priority by enhancing gas pressure and electric field by increasing microwave power to be applied.

7. 发明专利

JPH0758358A LIGHT EMITTING DEVICE AND ITS MANUFACTURE 失效
公开(公告)号：JPH0758358A
公开(公告)日：1995-03-03
申请号：JP22814893
申请日：1993-08-19
申请人： NISSIN ELECTRIC CO LTD
发明人： HAYASHI TSUKASA , KUWABARA SO
IPC分类号： H01L21/205 , H01L33/06 , H01L33/20 , H01L33/34 , H01L33/42 , H01L33/44 , H01L33/00
摘要： PURPOSE:To provide a light emitting device which can be used as a panel-type light emitting unit, a spontaneous light emission type display or the like and, further, has a high light emitting efficiency and its manufacturing method. CONSTITUTION:The light emitting device of the present invention has a glass substrate 2, a transparent electrode 4 formed on it, a quantum box layer 6 which is a collective unit of quantum boxes only whose surface layer made of fine particles are oxide layers or nitride layers, an insulating film 8 formed on the quantum box layer 6 and an upper electrode 10 formed on it. The quantum box layer 6 can be formed in such a manner that the fine particles are deposited on the substrate 2 by a plasma CVD method while a positive voltage is applied to the transparent electrode 4 and then, without exposing the substrate 2 to the air, only the surface layer parts of the deposited respective fine particles oxidized or nitridized.

8. 发明专利

JPH06291047A METHOD FOR FORMING SILICON FILM 失效
公开(公告)号：JPH06291047A
公开(公告)日：1994-10-18
申请号：JP19871492
申请日：1992-07-24
申请人： NISSIN ELECTRIC CO LTD
发明人： MURAKAMI HIROSHI , KIRIMURA HIROYA , HAYASHI TSUKASA
IPC分类号： C23C16/24 , H01L21/205
摘要： PURPOSE:To provide a method for forming silicon film using a safer raw material than monosilane or disilane and without heating a substrate on which a film is to be formed. CONSTITUTION:Tetramethylsilane and/or tetraethylsilane are used as raw materials, the raw materials are adsorbed on a substrate 10 on which a film is to be formed, and a hydrogen ion beam is applied to the substrate or the substrate is exposed to plasma and then a silicon film 10a is formed on the substrate.

9. 发明专利

JPH0641748A FORMATION OF POLYCRYSTALLINE SILICON FILM 失效
公开(公告)号：JPH0641748A
公开(公告)日：1994-02-15
申请号：JP19871892
申请日：1992-07-24
申请人： NISSIN ELECTRIC CO LTD
发明人： MURAKAMI HIROSHI , KIRIMURA HIROYA , HAYASHI TSUKASA
IPC分类号： C23C16/24 , H01L21/205
摘要： PURPOSE:To enable film formation on a base body without heating the base body by supplying tetramethylsilane or tetraethylsilane to the base body, exposing the base body to hydrogen plasma and irradiating the base body with hydrogen ions. CONSTITUTION:The base body 10 installed on an electrode 3 is maintained at a temp. lower than the b.p. of a raw material G1 by a cooler 4. While a prescribed vacuum degree is maintained in a film forming chamber 1, gaseous hydrogen G is introduced from a gas introducing part 7 into the chamber and a high-frequency voltage is impressed between the electrodes 3 and 30 to convert the gaseous hydrogen G2 to plasma. The gaseous tetramethylsilane or tetraethylsilane G1 is blown from a gaseous raw material supply nozzle 5 onto the surface of the base body 10. The gas G1 is adsorbed and deposited on the base body 10 and is cracked by the plasma. The gaseous hydrogen G3 is simultaneously introduced to an ion source 6 and an ion beam is drawn out. The base body 10 is irradiated with the ion beam. The adsorbed raw material is cracked and the desired polycrystalline silicon film 10a is formed on the base body 10.

10. 发明专利

JPH05183942A THREE-DIMENSIONAL DISPLAY 失效
公开(公告)号：JPH05183942A
公开(公告)日：1993-07-23
申请号：JP34621791
申请日：1991-12-27
申请人： NISSIN ELECTRIC CO LTD
发明人： HAYASHI TSUKASA , KIRIMURA HIROYA
IPC分类号： H04N13/04
摘要： PURPOSE:To provide the three-dimensional display which can obtain powerful and comparatively bright images having a satisfactory stereoscopic effect, widens the degree of freedom for the position and posture of video observers and can reduce energy consumption while being light in weight and compact. CONSTITUTION:This three-dimensional display is entirely formed in the shape of goggle and provided with a display part 2 for displaying an image for left eye at a position corresponding to the left eye and a display part 3 for displaying an image for right eye at a position corresponding to the right eye, and the respective display parts 2 and 3 are a liquid crystal display part LD provided with a back light source L composed of thin film EL elements.

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