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    • 1. 发明专利
    • Electron source
    • 电子源
    • JP2011216349A
    • 2011-10-27
    • JP2010083781
    • 2010-03-31
    • Nissin Electric Co LtdPanasonic CorpPanasonic Electric Works Co Ltdパナソニック株式会社パナソニック電工株式会社日新電機株式会社
    • ICHIHARA TSUTOMUHATAI TAKASHIKOGA KEISUKEYAMAMOTO TOSHIYOSHIMIYATA EMINAGAMACHI MANABUKATO KENJIINAMI HIROSHIHAYASHI TSUKASA
    • H01J1/312
    • PROBLEM TO BE SOLVED: To provide an electron source capable of preventing outbreak of pin holes within an electron passage layer, and capable of improving the electron discharge characteristics, in comparison with those of conventional ones.SOLUTION: A lower electrode 2 is separated into a plurality of electrodes 12 by slits 2b. The electron passage layer 6 is formed to ride over each electrode 12 and a surface of a substrate 11. The second electron passage part 6b includes multiple second grains 32a formed along the thickness direction of the substrate 11; a first insulation thin film 35 formed in the surface of each second grain 32a; multiple nanometer-order fine crystalline semiconductors 33 interposed between the second grains 32a adjacent to each other; and a second insulating thick film 34 formed in the surface of the fine crystalline semiconductor 33 and smaller than the fine crystalline semiconductor 33 in the crystal grain diameter. A region 36 of the second electron passage part 7b, in which the second grains 32 are formed in the thickness direction, and the first electron passage part 6a are different in the crystal orientation, and the second grain 32 is higher than the first grain in the columnar structure.
    • 要解决的问题:提供一种能够防止在电子通过层内发生针孔的电子源,并且能够改善电子放电特性,与现有技术相比较。解决方案:将下部电极2分成 多个电极12通过狭缝2b。 电子通过层6形成为跨越每个电极12和基板11的表面。第二电子通道部分6b包括沿着基板11的厚度方向形成的多个第二晶粒32a; 形成在第二晶粒32a的表面上的第一绝缘薄膜35; 介于彼此相邻的第二颗粒32a之间的多个纳米级微晶半导体33; 以及在微晶半导体33的表面形成的晶粒直径小于微晶半导体33的第二绝缘厚膜34。 第二电子通道部分7b的沿着厚度方向形成第二晶粒32的区域36和第一电子通道部分6a在晶体取向上不同,并且第二晶粒32比第一晶粒32高 柱状结构。
    • 2. 发明专利
    • Electron source
    • 电子源
    • JP2011216348A
    • 2011-10-27
    • JP2010083780
    • 2010-03-31
    • Nissin Electric Co LtdPanasonic CorpPanasonic Electric Works Co Ltdパナソニック株式会社パナソニック電工株式会社日新電機株式会社
    • ICHIHARA TSUTOMUHATAI TAKASHIKOGA KEISUKEYAMAMOTO TOSHIYOSHIMIYATA EMINAGAMACHI MANABUKATO KENJIINAMI HIROSHIHAYASHI TSUKASA
    • H01J1/312
    • PROBLEM TO BE SOLVED: To provide an electron source improved in the electron discharge characteristics, in comparison with those of conventional ones.SOLUTION: An electron passing layer 6 is provided between a lower electrode 2 and a surface electrode 7. The electron passing layer 6 includes a first electron passing part 6a on a lower electrode 2 side; and a second electron passing part 6b on a surface electrode 7 side. The second electron passing part 6b includes multiple second grains 32a formed along the thickness direction of the lower electrode 2; a first insulating thin film 35 formed in the surface of each of the second grains 32a; multiple nanometer-order fine crystalline semiconductors 33, interposed between the second grains 32a adjacent to each other; and a second insulating thick film 34 formed in the surface of each of the fine crystalline semiconductors 33 and formed smaller in the crystal grain diameter than the fine crystalline semiconductor 33. A region 36 of the second electron passing part 6b, in which the second grains 32a are formed in the thickness direction, and the first electron passing part 6a are mutually different in the crystal orientation, and the second grain 32a is higher than the first grain in the columnar structure.
    • 要解决的问题:提供与传统电子放电特性相比改善的电子源。解决方案:在下电极2和表面电极7之间设置电子通过层6.电子通过层6 包括在下电极2侧的第一电子通过部分6a; 和表面电极7侧的第二电子通过部6b。 第二电子通过部分6b包括沿下电极2的厚度方向形成的多个第二晶粒32a; 形成在每个第二晶粒32a的表面中的第一绝缘薄膜35; 介于彼此相邻的第二晶粒32a之间的多个纳米级微晶半导体33; 以及形成在每个细晶半导体33的表面中并且形成为比微晶半导体33更小的晶粒直径的第二绝缘厚膜34.第二电子通过部6b的区域36,其中第二晶粒 32a形成在厚度方向上,第一电子通过部6a在晶体取向上相互不同,第二晶粒32a比柱状结构中的第一晶粒高。
    • 3. 发明专利
    • Panoramic x-ray equipment with ct imaging function
    • 具有CT成像功能的全景X射线设备
    • JP2010022465A
    • 2010-02-04
    • JP2008184876
    • 2008-07-16
    • Panasonic Corpパナソニック株式会社
    • YAMAMOTO TOSHIYOSHI
    • A61B6/14A61B6/03
    • PROBLEM TO BE SOLVED: To provide panoramic X-ray equipment with a CT imaging function allowing an operator to recognize the three-dimensional positional relation of a desired region of teeth and jaws of a subject relatively inexpensively only by adding a new motion function.
      SOLUTION: The panoramic X-ray equipment includes an X-ray irradiation part 1 for irradiating the head of the subject with X rays; an imaging part 2 with a built-in semiconductor X-ray imaging device for detecting an X-ray image transmitting the head of the subject; and a rotary arm 3 disposed so that the X-ray irradiating part 1 and the imaging part 2 are rotated to face each other around the head of the subject. By setting the center of rotation of the rotary arm 3 at a specific position in the teeth and jaws, the X-ray image of an optional tomographic surface of the teeth and jaws can be captured. A plurality of tomographic surfaces parallel at approximate intervals are repeatedly photographed during one photographic operation, and a three-dimensional image can be computed based on a plurality of tomographic image data obtained in this way.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:为了提供具有CT成像功能的全景X射线设备,允许操作者仅通过添加新的运动来相对廉价地识别对象的所需区域的牙齿和颌的三维位置关系 功能。 解决方案:全景X射线设备包括:X射线照射部分1,用于用X射线照射被检体的头部; 具有内置的半导体X射线成像装置的成像部件2,用于检测发送对象的头部的X射线图像; 以及旋转臂3,其设置成使得X射线照射部1和成像部2相对于被检体的头部彼此相对地旋转。 通过将旋转臂3的旋转中心设置在齿和颚中的特定位置,可以捕获齿和颚的可选断层图像的X射线图像。 在一次拍摄操作期间重复拍摄以近似间隔平行的多个断层图像,并且可以基于以这种方式获得的多个断层图像数据来计算三维图像。 版权所有(C)2010,JPO&INPIT
    • 4. 发明专利
    • Dental x-ray imaging apparatus
    • 牙科X射线成像装置
    • JP2009225836A
    • 2009-10-08
    • JP2008071365
    • 2008-03-19
    • Panasonic Corpパナソニック株式会社
    • YAMAMOTO TOSHIYOSHI
    • A61B6/14A61B6/00
    • PROBLEM TO BE SOLVED: To provide a dental X-ray imaging apparatus which shows excellent density gradation resolution and gives high image quality.
      SOLUTION: The dental X-ray imaging apparatus is equipped with an X-ray emitting part 1 for irradiating a head part of a subject with X-rays, an imaging part 2 in which a semiconductor X-ray image pickup device 3 for detecting X-ray images transmitting through the head part of the subject is incorporated, and a rotating arm 4 arranged in a manner that the X-ray emitting part 1 and the imaging part 2 rotate around the head part of the subject while opposing each other. A temperature of the semiconductor X-ray image pickup device 3 itself is kept lower than that of the periphery of the device by providing a cooling device 5 in the vicinity of the semiconductor X-ray image pickup device 3 of the imaging part 2.
      COPYRIGHT: (C)2010,JPO&INPIT
    • 要解决的问题:提供一种显示出优异的密度等级分辨率并且提供高图像质量的牙科X射线成像装置。 解决方案:牙科X射线成像装置配备有用于用X射线照射被检体的头部的X射线发射部分1,其中半导体X射线图像拾取装置3 用于检测通过被检体的头部透射的X射线图像的旋转臂4和旋转臂4,其以使得X射线发射部1和成像部2围绕对象的头部部分旋转,同时相对于每个 其他。 通过在摄像部2的半导体X射线摄像装置3附近设置冷却装置5,将半导体X射线摄像装置3本身的温度保持为低于装置周围的温度。 P>版权所有(C)2010,JPO&INPIT