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1. 发明专利

JPH09244025A ORIENTATION TREATMENT OF ORIENTED FILM AND APPARATUS THEREFOR 失效
公开(公告)号：JPH09244025A
公开(公告)日：1997-09-19
申请号：JP7527396
申请日：1996-03-04
申请人： NISSIN ELECTRIC CO LTD , II H C KK
发明人： ASAGI NORIO , KUWABARA SO , EBARA TAIZO
IPC分类号： G02F1/1337
摘要： PROBLEM TO BE SOLVED: To make it possible to lessen the generation of particles and to simplify treating stages by irradiating the unbaked oriented film formed on a substrate with an ion beam simultaneously with or after the impression of a magnetic field and executing the orientation treatment and curing of the oriented film by the irradiation. SOLUTION: A vacuum vessel 24 is internally equipped with a holder 8 for holding a substrate 2 with the oriented film to be subjected to the orientation treatment. The vessel is provided with a solenoid-like coil 16 which is disposed to enclose the holder 8 and impresses the magnetic field 18 from a prescribed direction on the oriented film 6 of the substrate 2 with the oriented film on the holder 8. The vessel is also provided with an ion source 20 for irradiating the oriented film 6 of the substrate 2 with the oriented film on the holder 8 with the ion beam 22. An exciting current is supplied to the coil 16 from a DC power source. The ion source 20 is arranged on nearly the central axis of the coil 16 to make the magnetic field by the coil 16 and the ion beam 22 from the ion source 20 incident on the oriented film 6 of the substrate 2 with the oriented film on the holder 8 nearly parallel with each other.

2. 发明专利

JPH09218408A ORIENTATION TREATMENT OF ORIENTED FILM 失效
公开(公告)号：JPH09218408A
公开(公告)日：1997-08-19
申请号：JP5103096
申请日：1996-02-13
申请人： NISSIN ELECTRIC CO LTD , II H C KK
发明人： ASAGI NORIO , NAKABAYASHI KIYOHIRO , KUWABARA SO , EBARA TAIZO
IPC分类号： G02F1/1337 , G02B1/12
摘要： PROBLEM TO BE SOLVED: To simplify a stage for an orientation treatment and to prevent the generation of particles at the time of the orientation treatment by simultaneously executing the baking and orientation treatment of the unbaked and oriented film by irradiation with an ion beam. SOLUTION: A vacuum vessel 20 which is evacuated to a prescribed vacuum degree, a holder 8 which is disposed in the vacuum chamber 20 and holds a substrate 2 with the oriented film to be subjected to the treatment and an ion source 12 which is mounted at the vacuum chamber 20 and irradiates the oriented film 6 of the substrate 2 with the oriented film on the holder 8 with the ion beam 14 are disposed. The holder 8 is constituted rotatable like an arrow A round a central shaft 10 in such a manner that the irradiation angle θof the ion beam 14 with the surface of the oriented film 6 may be changed. The oriented film 6 which is unbaked and is disposed on the substrate 4 is irradiated with the ion beam 14 in the vacuum atmosphere, by which the baking and orientation treatment of the oriented film 6 are simultaneously executed.

3. 发明专利

JP2581371B2 失效
公开(公告)号：JP2581371B2
公开(公告)日：1997-02-12
申请号：JP1919592
申请日：1992-02-04
申请人： NISSIN ELECTRIC CO LTD
发明人： TABATA TAKAO , NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： C23C16/50 , C23C16/44 , C23C16/515 , H01L21/205 , H01L21/31 , H01L21/336 , H01L29/786

4. 发明专利

JPH08334768A ORIENTATION TREATMENT OF ORIENTED FILM 失效
公开(公告)号：JPH08334768A
公开(公告)日：1996-12-17
申请号：JP16281695
申请日：1995-06-05
申请人： II H C KK , NISSIN ELECTRIC CO LTD
发明人： EBARA TAIZO , NAKABAYASHI KIYOHIRO , ASAGI NORIO , KUWABARA SO
IPC分类号： G02F1/1337
摘要： PURPOSE: To obtain high orientability even for an oriented film which is hardly subjected to a rubbing treatment by irradiating this oriented film with ion beams. CONSTITUTION: A substrate 2 with the oriented film is formed by applying the oriented film 6 consisting of a high-polymer org. material, such as polyimide, on the surface of, for example, a glass substrate 4. The surface of the oriented film 6 is irradiated with the ion beams 14 by sharpening an irradiation angle θfrom diagonal above at the time of the orientation treatment. The orientation order angle of liquid crystals increases as the irradiation angle 6 is set smaller and, therefore, the setting of this angle at the smaller value is more preferable. The direction of the irradiation on the oriented film 6 with the ion beams and the rubbing direction to the oriented film 6 are set at nearly the same directions even if whichever treatment is execute first. Both treatment directions to the same oriented films 6 are eventually unified and the respective orientation treatments make up each other if both are set in nearly the same directions and, therefore, the same rubbing directions are more preferable for obtaining the higher orientability.

5. 发明专利

JP2503717B2 失效
公开(公告)号：JP2503717B2
公开(公告)日：1996-06-05
申请号：JP9272690
申请日：1990-04-06
申请人： NISSIN ELECTRIC CO LTD
发明人： NISHAMA SATORU , OGATA KYOSHI , MIKAMI TAKASHI , KUWABARA SO
IPC分类号： C23C14/06 , G11B5/187

6. 发明专利

JPH07283153A PLASMA CVD METHOD AND DEVICE 失效
公开(公告)号：JPH07283153A
公开(公告)日：1995-10-27
申请号：JP2923495
申请日：1995-02-17
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KIRIMURA HIROYA , KUWABARA SO
IPC分类号： C23C16/24 , C23C16/34 , C23C16/50 , C23C16/515 , H01L21/205 , H01L21/31
摘要： PURPOSE:To provide a plasma CVD method and a device that particles are prevented from being generated and a film is enhanced in forming speed by a method wherein a basic high-frequency electric power of prescribed frequency range is modulated in amplitude with modulating frequency of a prescribed range, and a high-frequency electric power above a specific value in area density is applied to a high-frequency electrode larger in area than a specific value to turn material gas into plasma. CONSTITUTION:A substrate S1 on which a film is to be formed is placed on an electrode 2 inside a vacuum chamber 1, a high-frequency electric power is applied onto a high-frequency electrode 3 above 1000cm in area from a high-frequency electric power generating device 33, whereby gas introduced into the vacuum chamber 1 is turned into plasma to form a required film on the surface of the substrate S1. At this point, the high-frequency electric power generating device 33 is so set as to modulate a basic high-frequency electric power of frequency 10MHz to 200MHz in amplitude with a prescribed frequency 1/10 to 1/1000 as high as 10MHz to 200MHz, and an electric power applied to the high-frequency electrode 3 is so set as to be above 0.4W/cm in high frequency power area density. Then, decomposition of material gas is accelerated to enhance a film forming speed, and particles are restrained from occurring.

7. 发明专利

JPH06342770A ETCHING METHOD AND DEVICE 失效
公开(公告)号：JPH06342770A
公开(公告)日：1994-12-13
申请号：JP22241692
申请日：1992-08-21
申请人： NISSIN ELECTRIC CO LTD
发明人： MITSUTA YOSHIE , MURAKAMI HIROSHI , KIRIMURA HIROYA , KUWABARA SO
IPC分类号： C23F4/00 , H01L21/302 , H01L21/3065
摘要： PURPOSE:To enable a work to be protected against side etching and enhanced in etching shape controllability, etching rate, and plane uniformity by a method wherein etching gas is turned into plasma by applying a first pulse, second pulse-modulated high-frequency voltage. CONSTITUTION:A tray 9 fitted with a substrate 8 on which an etched thin film is formed is mounted on an electrode 4, and etching gas is introduced into a chamber 1 from a gas source 5 as the chamber 1 is exhausted to a prescribed pressure. A first pulse-modulated high-frequency voltage where a second shorter pulse-modulated by voltage is made to overlap is applied to etching gas by a power supply 7 to turn it into plasma, and the etched thin film on the substrate 8 is etched. Therefore, etching gas is enhanced in ionization rate, the vacuum chamber 1 can be reduced to a lower pressure than a conventional one, consequently ions are enhanced in mean free path, and etching can be carried out high in anisotropy. As etching gas has a high ionization rate, and etching operation can be carried out with high plane uniformity at a high etching rate.

8. 发明专利

JPH06304471A METHOD FOR FORMING FINE PARTICLE AND APPARATUS THEREFOR 失效
公开(公告)号：JPH06304471A
公开(公告)日：1994-11-01
申请号：JP9585993
申请日：1993-04-22
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KUWABARA SO
IPC分类号： B01J19/08 , C01B33/02 , C23C16/44
摘要： PURPOSE:To form a fine particle with a particle diameter being made uniform by a method and an apparatus wherein a gas for forming the fine particle is introduced in a vacuum container and it is made into a plasma by loading an electric power to generate a fine particle, and then, an inert gas is introduced and is made into a plasma by loading an electric power under a specified degree of vacuum to control the particle diameter of the fine particle. CONSTITUTION:In a fine particle generating process, a gas for forming a fine particle (e.g. silane) is introduced into a vacuum container 1 from a gas source 541a for forming a fine particle and is made into a plasma by loading an electric power under a specified degree of vacuum and a fine particle is generated. In addition, in a particle shape controlling process, an inert gas (e.g. argon) is introduced into the vacuum container 1 from an inert gas source 545a and is made into a plasma by loading an electric power under a specified degree of vacuum and the particle diameter of the fine particle is controlled under the plasma. As the result, a required fine particle with a particle diameter being made uniform can be more efficiently formed in comparison with the conventional method and apparatus for forming a fine particle.

9. 发明专利

JPH06291048A THIN-FILM FORMATION METHOD 失效
公开(公告)号：JPH06291048A
公开(公告)日：1994-10-18
申请号：JP20022092
申请日：1992-07-02
申请人： NISSIN ELECTRIC CO LTD
发明人： KIRIMURA HIROYA , KUWABARA SO
IPC分类号： C23C16/50 , H01L21/205 , H01L21/31
摘要： PURPOSE:To suppress the generation of particles and to promote crystallization of a film even in a low-temperature film formation by a plasma CVD method. CONSTITUTION:A modulated high-frequency power for interrupting a source high-frequency signal is supplied between a discharge electrode 8 and a holder/ electrode 6 from a high-frequency power supply 14a. Also, an intermittent negative bias voltage is applied to the holder/electrode 6 in synchronization with the interruption of the high-frequency power from a bias power supply 24.

10. 发明专利

JPH06256956A PLASMA TREATING DEVICE 失效
公开(公告)号：JPH06256956A
公开(公告)日：1994-09-13
申请号：JP4556193
申请日：1993-03-05
申请人： NISSIN ELECTRIC CO LTD
发明人： NAKAHIGASHI TAKAHIRO , KUWABARA SO , DOI AKIRA , ROTSUDO DABURU BOOZUUERU
IPC分类号： C23C16/50 , C23C16/511 , C23F4/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31
摘要： PURPOSE:To provide the plasma treating device with which particle sticking to an object to be treated is made lesser than with the conventional devices, high-density plasma is maintained and a plasma treatment is executed at a correspondingly higher speed with decreased defects. CONSTITUTION:This plasma treating device has a plasma forming chamber 1 and a plasma treating chamber 2 successively provided therewith. The object 5 to be treated is installed in this plasma treating chamber 2 and the plasma is generated in this plasma forming chamber 1. Gas G for subjecting the object 5 to be treated to a desired treatment is introduced by a gas introducing pipe 3 and while the plasma treating chamber 2 and the plasma forming chamber 1 are evacuated to a vacuum by a discharge device 23 connected to the former and a discharge pump 15 connected to the latter, the plasma generated in the plasma forming chamber 1 is introduced into the plasma treating chamber 2, where the object 5 to be treated is subjected to the desired treatment.

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